PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK 21 February 2014 Product data sheet 1. General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses • Suitable for standard level gate drive 3. Applications • DC-to-DC converters • Load switching • Motor control • Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥ 25 °C; T ≤ 175 °C - - 100 V DS j j ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 [1] - - 68 A P total power dissipation T = 25 °C; Fig. 1 - - 170 W tot mb T junction temperature -55 - 175 °C j Static characteristics R drain-source on-state V = 10 V; I = 15 A; T = 100 °C; - 19.4 25 mΩ DSon GS D j resistance Fig. 12; Fig. 13 V = 10 V; I = 15 A; T = 25 °C; - 10.8 13.9 mΩ GS D j Fig. 13 Dynamic characteristics Q gate-drain charge V = 10 V; I = 25 A; V = 50 V; - 17 23.8 nC GD GS D DS Fig. 15; Fig. 14 Q total gate charge V = 10 V; I = 25 A; V = 50 V; - 59 83 nC G(tot) GS D DS Fig. 14; Fig. 15

Nexperia PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- V = 10 V; T = 25 °C; I = 68 A; - - 127 mJ DS(AL)S GS j(init) D source avalanche V ≤ 100 V; unclamped; R = 50 Ω sup GS energy [1] Continuous current is limited by package 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain[1] G 3 S source mb D mounting base; connected to mbb076 S 2 drain 1 3 D2PAK (SOT404) [1] It is not possible to make connection to pin 2. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN013-100BS D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code PSMN013-100BS PSMN013-100BS 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥ 25 °C; T ≤ 175 °C - 100 V DS j j V drain-gate voltage T ≤ 175 °C; T ≥ 25 °C; R = 20 kΩ - 100 V DGR j j GS PSMN013-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 21 February 2014 2 / 13

Nexperia PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK Symbol Parameter Conditions Min Max Unit V gate-source voltage -20 20 V GS P total power dissipation T = 25 °C; Fig. 1 - 170 W tot mb ID drain current VGS = 10 V; Tmb = 100 °C; Fig. 2 [1] - 47 A VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - 68 A I peak drain current pulsed; t ≤ 10 µs; T = 25 °C; Fig. 3 - 272 A DM p mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j T peak soldering temperature - 260 °C sld(M) Source-drain diode IS source current Tmb = 25 °C [1] - 68 A I peak source current pulsed; t ≤ 10 µs; T = 25 °C - 272 A SM p mb Avalanche ruggedness E non-repetitive drain-source V = 10 V; T = 25 °C; I = 68 A; - 127 mJ DS(AL)S GS j(init) D avalanche energy V ≤ 100 V; unclamped; R = 50 Ω sup GS [1] Continuous current is limited by package 03aa16 003aac512 120 80 ID Pder (A) (%) 60 80 40 40 20 0 0 0 50 100 150 200 0 50 100 150 200 Tmb(°C) Tmb(°C) Fig. 1. Normalized total power dissipation as a Fig. 2. Continuous drain current as a function of function of mounting base temperature mounting base temperature PSMN013-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 21 February 2014 3 / 13

Nexperia PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK 103 003aae168 ID (A) LimitRDSon=VDS/ID 102 tp=10µs 100µs 10 DC 1 1ms 10ms 100ms 10-1 1 10 102 VDS(V) 103 Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance Fig. 4 - 0.5 0.9 K/W th(j-mb) from junction to mounting base R thermal resistance minimum footprint; mounted on a - 50 - K/W th(j-a) from junction to printed-circuit board ambient 003aad575 1 Zth(j-mb) (K/W) δ=0.5 10-1 0.2 0.1 0.05 10-2 0.02 P δ= tp T 10-3 single shot tp t T 10-4 1e-6 10-5 10-4 10-3 10-2 10-1 1 10 tp(s) Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN013-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 21 February 2014 4 / 13

Nexperia PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I = 0.25 mA; V = 0 V; T = -55 °C 90 - - V (BR)DSS D GS j breakdown voltage I = 0.25 mA; V = 0 V; T = 25 °C 100 - - V D GS j V gate-source threshold I = 1 mA; V = V ; T = 175 °C; 1 - - V GS(th) D DS GS j voltage Fig. 10 I = 1 mA; V = V ; T = 25 °C; 2 3 4 V D DS GS j Fig. 10; Fig. 11 I = 1 mA; V = V ; T = -55 °C; - - 4.6 V D DS GS j Fig. 10 I drain leakage current V = 100 V; V = 0 V; T = 125 °C - - 100 µA DSS DS GS j V = 100 V; V = 0 V; T = 25 °C - 0.06 2 µA DS GS j I gate leakage current V = 20 V; V = 0 V; T = 25 °C - 10 100 nA GSS GS DS j V = -20 V; V = 0 V; T = 25 °C - 10 100 nA GS DS j R drain-source on-state V = 10 V; I = 15 A; T = 100 °C; - 19.4 25 mΩ DSon GS D j resistance Fig. 12; Fig. 13 V = 10 V; I = 15 A; T = 175 °C; - 29.5 38.9 mΩ GS D j Fig. 12; Fig. 13 V = 10 V; I = 15 A; T = 25 °C; - 10.8 13.9 mΩ GS D j Fig. 13 R gate resistance f = 1 MHz 0.5 1 2 Ω G Dynamic characteristics Q total gate charge I = 25 A; V = 50 V; V = 10 V; - 59 83 nC G(tot) D DS GS Fig. 14; Fig. 15 I = 0 A; V = 0 V; V = 10 V - 47.6 66.7 nC D DS GS Q gate-source charge I = 25 A; V = 50 V; V = 10 V; - 13.8 19.4 nC GS D DS GS Fig. 14; Fig. 15 Q pre-threshold gate- I = 25 A; V = 50 V; V = 10 V; - 9.2 - nC GS(th) D DS GS source charge Fig. 15; Fig. 14 Q post-threshold gate- - 4.6 - nC GS(th-pl) source charge Q gate-drain charge - 17 23.8 nC GD V gate-source plateau V = 50 V; Fig. 15; Fig. 14 - 4.4 - V GS(pl) DS voltage C input capacitance V = 50 V; V = 0 V; f = 1 MHz; - 3195 4315 pF iss DS GS T = 25 °C; Fig. 16 C output capacitance j - 221 300 pF oss PSMN013-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 21 February 2014 5 / 13

Nexperia PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit C reverse transfer - 136 191 pF rss capacitance t turn-on delay time V = 50 V; R = 2 Ω; V = 10 V; - 20.7 31.1 ns d(on) DS L GS R = 4.7 Ω; T = 25 °C t rise time G(ext) j - 25 37.5 ns r t turn-off delay time - 52.5 78.8 ns d(off) t fall time - 24 36 ns f Source-drain diode V source-drain voltage I = 15 A; V = 0 V; T = 25 °C; Fig. 17 - 0.85 1.2 V SD S GS j t reverse recovery time I = 25 A; dI /dt = 100 A/µs; V = 0 V; - 52 68 ns rr S S GS V = 50 V Q recovered charge DS - 109 142 nC r 003aad577 003aad580 200 5000 ID 20 10 C Ciss (A) 6 (pF) 160 5.5 4000 120 3000 5 80 Crss 2000 40 4.5 VGS(V)=4 0 1000 0 1 2 3 4 0 2 4 6 8 10 VDS(V) VGS(V) Fig. 5. Output characteristics: drain current as a Fig. 6. Input and reverse transfer capacitances as a function of drain-source voltage; typical values function of gate-source voltage; typical values PSMN013-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 21 February 2014 6 / 13

Nexperia PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK 003aad585 003aad586 45 150 RDSon gfs (mΩ) (S) 120 35 90 25 60 15 30 5 0 4 8 12 16 20 0 30 60 90 120 150 VGS(V) ID(A) Fig. 7. Drain-source on-state resistance as a function Fig. 8. Forward transconductance as a function of of gate-source voltage; typical values drain current; typical values 003aad582 003aad280 100 5 ID VGS(th) (A) (V) 80 4 max 60 3 typ Tj=175°C 40 2 min 25°C 20 1 0 0 0 2 4 6 -60 0 60 120 180 VGS(V) Tj(°C) Fig. 9. Transfer characteristics: drain current as a Fig. 10. Gate-source threshold voltage as a function of function of gate-source voltage; typical values junction temperature PSMN013-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 21 February 2014 7 / 13

Nexperia PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK 10-1 03aa35 3.2 003aad774 ID (A) a min typ max 10-2 2.4 10-3 1.6 10-4 0.8 10-5 10-6 0 0 2 4 6 -60 0 60 120 180 VGS(V) Tj(°C) Fig. 11. Sub-threshold drain current as a function of Fig. 12. Normalized drain-source on-state resistance gate-source voltage factor as a function of junction temperature 003aad578 003aad583 30 10 RDSon VGS (mΩ) VGS(V)=4.5 (V) 8 25 VDS=50V 6 20 4 15 5 20 2 6 10 10 0 0 20 40 60 80 0 15 30 45 60 ID(A) QG(nC) Fig. 13. Drain-source on-state resistance as a function Fig. 14. Gate-source voltage as a function of gate of drain current; typical values charge; typical values PSMN013-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 21 February 2014 8 / 13

Nexperia PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK 104 003aad581 VDS C Ciss ID (pF) VGS(pl) 103 Coss VGS(th) VGS QGS1 QGS2 102 Crss QGS QGD QG(tot) 003aaa508 10 Fig. 15. Gate charge waveform definitions 10-2 10-1 1 10 102 VDS(V) Fig. 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aad584 100 IS (A) 80 60 40 Tj=175°C 20 25°C 0 0 0.3 0.6 0.9 1.2 VSD(V) Fig. 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN013-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 21 February 2014 9 / 13

Nexperia PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK 11. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 A E A1 D1 mounting base D HD 2 Lp 1 3 b2 b c e e Q 0 5 mm scale Dimensions (mm are the original dimensions) Unit A A1 b b2 c D D1 E e HD Lp Q max 4.5 1.40 0.85 1.45 0.64 11 1.6 10.3 15.8 2.9 2.6 mm nom 2.54 min 4.1 1.27 0.60 1.05 0.46 1.2 9.7 14.8 2.1 2.2 sot404_po Outline References European Issue date version IEC JEDEC JEITA projection 06-03-16 SOT404 13-02-25 Fig. 18. Package outline D2PAK (SOT404) PSMN013-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 21 February 2014 10 / 13

Nexperia PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - 12. Legal information lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance Document Product Definition with the Terms and conditions of commercial sale of Nexperia. status [1][2] status [3] Objective Development This document contains data from Right to make changes — Nexperia reserves the right to [short] data the objective specification for product make changes to information published in this document, including without sheet development. limitation specifications and product descriptions, at any time and without Preliminary Qualification This document contains data from the notice. This document supersedes and replaces all information supplied prior [short] data preliminary specification. to the publication hereof. sheet Suitability for use — Nexperia products are not designed, Product Production This document contains the product authorized or warranted to be suitable for use in life support, life-critical or [short] data specification. safety-critical systems or equipment, nor in applications where failure or sheet malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental [1] Please consult the most recently issued document before initiating or damage. Nexperia and its suppliers accept no liability for completing a design. inclusion and/or use of Nexperia products in such equipment or [2] The term 'short data sheet' is explained in section "Definitions". applications and therefore such inclusion and/or use is at the customer’s own [3] The product status of device(s) described in this document may have risk. changed since this document was published and may differ in case of multiple devices. The latest product status information is available on Quick reference data — The Quick reference data is an extract of the the Internet at URL http://www.nexperia.com. product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these 12.2 Definitions products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the Preview — The document is a preview version only. The document is still specified use without further testing or modification. subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to Customers are responsible for the design and operation of their the accuracy or completeness of information included herein and shall have applications and products using Nexperia products, and Nexperia no liability for the consequences of use of such information. accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine Draft — The document is a draft version only. The content is still under whether the Nexperia product is suitable and fit for the internal review and subject to formal approval, which may result in customer’s applications and products planned, as well as for the planned modifications or additions. Nexperia does not give any application and use of customer’s third party customer(s). Customers should representations or warranties as to the accuracy or completeness of provide appropriate design and operating safeguards to minimize the risks information included herein and shall have no liability for the consequences associated with their applications and products. of use of such information. Nexperia does not accept any liability related to any default, Short data sheet — A short data sheet is an extract from a full data sheet damage, costs or problem which is based on any weakness or default with the same product type number(s) and title. A short data sheet is in the customer’s applications or products, or the application or use by intended for quick reference only and should not be relied upon to contain customer’s third party customer(s). Customer is responsible for doing all detailed and full information. For detailed and full information see the necessary testing for the customer’s applications and products using Nexperia relevant full data sheet, which is available on request via the local Nexperia products in order to avoid a default of the applications sales office. In case of any inconsistency or conflict with the and the products or of the application or use by customer’s third party short data sheet, the full data sheet shall prevail. customer(s). Nexperia does not accept any liability in this respect. Product specification — The information and data provided in a Product Limiting values — Stress above one or more limiting values (as defined in data sheet shall define the specification of the product as agreed between the Absolute Maximum Ratings System of IEC 60134) will cause permanent Nexperia and its customer, unless Nexperia and damage to the device. Limiting values are stress ratings only and (proper) customer have explicitly agreed otherwise in writing. In no event however, operation of the device at these or any other conditions above those shall an agreement be valid in which the Nexperia product given in the Recommended operating conditions section (if present) or the is deemed to offer functions and qualities beyond those described in the Characteristics sections of this document is not warranted. Constant or Product data sheet. repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia 12.3 Disclaimers products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise Limited warranty and liability — Information in this document is believed agreed in a valid written individual agreement. In case an individual to be accurate and reliable. However, Nexperia does not give agreement is concluded only the terms and conditions of the respective any representations or warranties, expressed or implied, as to the accuracy agreement shall apply. Nexperia hereby expressly objects to or completeness of such information and shall have no liability for the applying the customer’s general terms and conditions with regard to the consequences of use of such information. Nexperia takes no purchase of Nexperia products by customer. responsibility for the content in this document if provided by an information source outside of Nexperia. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the PSMN013-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 21 February 2014 11 / 13

Nexperia PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non- automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PSMN013-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 21 February 2014 12 / 13

Nexperia PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK 13. Contents 1 General description ...............................................1 2 Features and benefits ............................................1 3 Applications ...........................................................1 4 Quick reference data .............................................1 5 Pinning information ...............................................2 6 Ordering information .............................................2 7 Marking ...................................................................2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics .......................................................5 11 Package outline ...................................................10 12 Legal information .................................................11 12.1 Data sheet status ...............................................11 12.2 Definitions ...........................................................11 12.3 Disclaimers .........................................................11 12.4 Trademarks ........................................................12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 21 February 2014 PSMN013-100BS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 21 February 2014 13 / 13