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PN2222ATFR产品简介:
ICGOO电子元器件商城为您提供PN2222ATFR由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 PN2222ATFR价格参考。Fairchild SemiconductorPN2222ATFR封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 40V 1A 300MHz 625mW 通孔 TO-92-3。您可以下载PN2222ATFR参考资料、Datasheet数据手册功能说明书,资料中有PN2222ATFR 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANSISTOR AMP NPN GP TO-92 CASE两极晶体管 - BJT NPN Transistor General Purpose |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | Fairchild Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,两极晶体管 - BJT,Fairchild Semiconductor PN2222ATFR- |
数据手册 | |
产品型号 | PN2222ATFR |
PCN设计/规格 | |
不同 Ib、Ic时的 Vce饱和值(最大值) | 1V @ 50mA,500mA |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 100 @ 150mA,10V |
产品目录页面 | |
产品种类 | 两极晶体管 - BJT |
供应商器件封装 | TO-92-3 |
其它名称 | PN2222AD26ZCT |
功率-最大值 | 625mW |
包装 | 剪切带 (CT) |
单位重量 | 240 mg |
发射极-基极电压VEBO | 6 V |
商标 | Fairchild Semiconductor |
增益带宽产品fT | 300 MHz |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Reel |
封装/外壳 | TO-226-3、TO-92-3(TO-226AA)成形引线 |
封装/箱体 | TO-92-3 Kinked Lead |
工厂包装数量 | 2000 |
晶体管极性 | NPN |
晶体管类型 | NPN |
最大功率耗散 | 625 mW |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 1 A |
最小工作温度 | - 55 C |
标准包装 | 1 |
电压-集射极击穿(最大值) | 40V |
电流-集电极(Ic)(最大值) | 1A |
电流-集电极截止(最大值) | - |
直流电流增益hFE最大值 | 300 |
直流集电极/BaseGainhfeMin | 100 |
系列 | PN2222 |
配置 | Single |
集电极—发射极最大电压VCEO | 40 V |
集电极—基极电压VCBO | 75 V |
集电极—射极饱和电压 | 1 V |
集电极连续电流 | 1 A |
零件号别名 | PN2222ATFR_NL |
频率-跃迁 | 300MHz |
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
P N 2 2 July 2014 2 2 A — N P PN2222A N G NPN General-Purpose Amplifier e n e r a l - P u Features r p • This device is for use as a medium power amplifier and o s switch requiring collector currents up to 500mA. e A m p TO-92 l i f EBC i e r Ordering Information Part Number Top Mark Package Packing Method PN2222ABU PN2222A TO-92 3L Bulk PN2222ATA PN2222A TO-92 3L Ammo PN2222ATF PN2222A TO-92 3L Tape and Reel PN2222ATFR PN2222A TO-92 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 75 V CBO V Emitter-Base Voltage 6.0 V EBO I Collector Current 1.0 A C T Operating and Storage Junction Temperature Range -55 to 150 °C STG Note: 1. These rating are based on a maximum junction temperature of 150 °C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operation. © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com PN2222A Rev. 1.1.0
P N Thermal Characteristics(3) 2 2 Values are at TA = 25°C unless otherwise noted. 22 A Symbol Parameter Max. Unit — Total Device Dissipation 625 mW N PD Derate Above 25°C 5.0 mW/°C P N RθJC Thermal Resistance, Junction to Case 83.3 °C/W G e RθJA Thermal Resistance, Junction to Ambient 200 °C/W n e r Note: a l 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. -P u r p o s e A m p l i f i e r © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com PN2222A Rev. 1.1.0 2
P N Electrical Characteristics 2 2 Values are at T = 25°C unless otherwise noted. 2 A 2 A Symbol Parameter Conditions Min. Max. Unit — Off Characteristics N Collector-Emitter Breakdown P BV I = 10 mA, I = 0 40 V N (BR)CEO Voltage(4) C B G BV(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 75 V e n BV Emitter-Base Breakdown Voltage I = 10 μA, I = 0 6.0 V e (BR)EBO E C r a ICEX Collector Cut-Off Current VCE = 60 V, VEB(off) = 3.0 V 10 nA l- P V = 60 V, I = 0 0.01 ICBO Collector Cut-Off Current VCB = 60 V, IE = 0, T = 125°C 10 μA urp CB E A o I Emitter Cut-Off Current V = 3.0 V, I = 0 10 nA s EBO EB C e IBL Base Cut-Off Current VCE = 60 V, VEB(off) = 3.0 V 20 nA A m On Characteristics p IC = 0.1 mA, VCE = 10 V 35 lif i I = 1.0 mA, V = 10 V 50 e C CE r I = 10 mA, V = 10 V 75 C CE I = 10 mA, V = 10 V, h DC Current Gain C CE 35 FE T = -55°C A I = 150 mA, V = 10 V(4) 100 300 C CE I = 150 mA, V = 1 V(4) 50 C CE I = 500 mA, V = 10 V(4) 40 C CE I = 150 mA, I = 15 mA 0.3 V Collector-Emitter Saturation Voltage(4) C B V CE(sat) I = 500 mA, I = 50 mA 1.0 C B I = 150 mA, I = 15 mA 0.6 1.2 V Base-Emitter Saturation Voltage(4) C B V BE(sat) I = 500 mA, I = 50 mA 2.0 C B Small Signal Characteristics I = 20 mA, V = 20 V, f Current Gain Bandwidth Product C CE 300 MHz T f = 100 MHz C Output Capacitance V = 10 V, I = 0, f = 1 MHz 8.0 pF obo CB E C Input Capacitance V = 0.5 V, I = 0, f = 1 MHz 25 pF ibo EB C I = 20 mA, V = 20 V, rb’C Collector Base Time Constant C CB 150 pS c f = 31.8 MHz I = 100 μA, V = 10 V, NF Noise Figure C CE 4.0 dB R = 1.0 kΩ, f = 1.0 kHz S Real Part of Common-Emitter I = 20 mA, V = 20 V, Re(h ) C CE 60 Ω ie High Frequency Input Impedance f = 300 MHz Switching Characteristics td Delay Time VCC = 30 V, VEB(off) = 0.5 V, 10 ns tr Rise Time IC = 150 mA, IB1 = 15 mA 25 ns ts Storage Time VCC = 30 V, IC = 150 mA, 225 ns tf Fall Time IB1 = IB2 = 15 mA 60 ns Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com PN2222A Rev. 1.1.0 3
P N Physical Dimensions 2 2 2 2 A — TO-92 (Bulk) N P N G e n e r a l - P u r p o s e A m p l i f i e r D Figure 1. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf. © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com PN2222A Rev. 1.1.0 4
P N Physical Dimensions (Continued) 2 2 2 2 A TO-92 (Ammo, Tape and Reel) — N P N G e n e r a l - P u r p o s e A m p l i f i e r Figure 2. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf. © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com PN2222A Rev. 1.1.0 5
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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. 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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: PN2222ATA PN2222ATF PN2222A_J05Z PN2222ATFR PN2222ATAR PN2222A_J18Z PN2222A_D26Z PN2222ARA PN2222ARP PN2222ABU PN2222ANLBU PN2222ABU_Q