Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

PMR280UN OT416 S N-channel TrenchMOS ultra low level FET Rev. 2 — 3 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits  Surface mounted package  Footprint 63% smaller than SOT23  Low on-state resistance  Low threshold voltage 1.3 Applications  Driver circuits  Switching in portable appliances 1.4 Quick reference data Table 1. Quick refere nce data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥25°C; T ≤150°C - - 20 V DS j j I drain current T =25°C; V =4.5V - - 0.98 A D sp GS V gate-source voltage -8 - 8 V GS Static characteristics R drain-source on-state V =4.5V; I =0.2A; T =25°C - 280 340 mΩ DSon GS D j resistance 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2 S source 3 D drain G 1 2 S SOT416 (SC-75) 017aaa253

PMR280UN NXP Semiconductors N-channel TrenchMOS ultra low level FET 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version PMR280UN SC-75 plastic surface-mounted package; 3 leads SOT416 4. Marking Table 4. Marking cod es Type number Marking code PMR280UN R5 5. Limiting values Table 5. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥25°C; T ≤150°C - 20 V DS j j V drain-gate voltage T ≥25°C; T ≤150°C; R =20kΩ - 20 V DGR j j GS V gate-source voltage -8 8 V GS I drain current T =25°C; V =4.5V - 0.98 A D sp GS T =100°C; V =4.5V - 0.62 A sp GS I peak drain current T =25°C; pulsed; t ≤10µs - 1.97 A DM sp p P total power dissipation T =25°C - 0.53 W tot sp T storage temperature -55 150 °C stg T junction temperature -55 150 °C j Source-drain diode I source current T =25°C - 0.44 A S sp I peak source current T =25°C; pulsed; t ≤10µs - 0.88 A SM sp p PMR280UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 3 February 2012 2 of 13

PMR280UN NXP Semiconductors N-channel TrenchMOS ultra low level FET 03aa25 03aa17 120 120 Ider Pder (%) (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 150 200 Tsp (°C) Tsp (°C) Fig 1. Normalized continuous drain current as a Fig 2. Normalized total power dissipation as a function of mounting base temperature function of solder point temperature 03an10 10 ID (A) Limit RDSon = VDS / ID tp = 10 μs 1 100 μs 1 ms 10-1 DC 10 ms 100 ms 10-2 10-1 1 10 102 VDS (V) Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PMR280UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 3 February 2012 3 of 13

PMR280UN NXP Semiconductors N-channel TrenchMOS ultra low level FET 6. Thermal characteristics Table 6. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance - - 235 K/W th(j-sp) from junction to solder point 103 03an29 Zth(j-sp) (K/W) δ = 0.5 102 0.2 tp P δ = 0.1 T 0.05 0.02 tp t single pulse T 10 10-4 10-3 10-2 10-1 1 10 tp (s) Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration PMR280UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 3 February 2012 4 of 13

PMR280UN NXP Semiconductors N-channel TrenchMOS ultra low level FET 7. Characteristics Table 7. Characterist ics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I =1µA; V =0V; T =25°C 20 - - V (BR)DSS D GS j breakdown voltage I =1µA; V =0V; T =-55°C 18 - - V D GS j V gate-source threshold I =0.25mA; V =V ; T =25°C 0.45 0.7 1 V GS(th) D DS GS j voltage I =0.25mA; V =V ; T =150°C 0.25 - - V D DS GS j I =0.25mA; V =V ; T =-55°C - - 1.2 V D DS GS j I drain leakage current V =20V; V =0V; T =25°C - - 1 µA DSS DS GS j V =20V; V =0V; T =150°C - - 100 µA DS GS j I gate leakage current V =8V; V =0V; T =25°C - 10 100 nA GSS GS DS j V =-8V; V =0V; T =25°C - 10 100 nA GS DS j R drain-source on-state V =4.5V; I =0.2A; T =25°C - 280 340 mΩ DSon GS D j resistance V =4.5V; I =0.2A; T =150°C - 448 544 mΩ GS D j V =2.5V; I =0.1A; T =25°C - 360 430 mΩ GS D j V =1.8V; I =0.075A; T =25°C - 460 660 mΩ GS D j Dynamic characteristics Q total gate charge I =1A; V =10V; V =4.5V; - 0.89 - nC G(tot) D DS GS T =25°C Q gate-source charge j - 0.13 - nC GS Q gate-drain charge - 0.18 - nC GD C input capacitance V =20V; V =0V; f=1MHz; - 45 - pF iss DS GS T =25°C C output capacitance j - 11 - pF oss C reverse transfer - 7 - pF rss capacitance t turn-on delay time V =10V; R =10Ω; V =4.5V; - 4.5 - ns d(on) DS L GS R =6Ω; T =25°C t rise time G(ext) j - 10 - ns r t turn-off delay time - 18.5 - ns d(off) t fall time - 5 - ns f Source-drain diode V source-drain voltage I =0.3A; V =0V; T =25°C - 0.83 1.2 V SD S GS j PMR280UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 3 February 2012 5 of 13

PMR280UN NXP Semiconductors N-channel TrenchMOS ultra low level FET 03an02 03an04 2.5 2.5 4.5 3 2.5 ID ID (A) (A) 2 2 25 °C Tj = 150 °C 2 1.5 1.5 1.8 1 1 0.5 VGS (V) = 1.5 0.5 0 0 0 0.5 1 1.5 2 0 1 2 3 4 VDS (V) VGS (V) Fig 5. Output characteristics: drain current as a Fig 6. Transfer characteristics: drain current as a function of drain-source voltage; typical values function of gate-source voltage; typical values 03an03 03af18 1 2 RDSon VGS (V) = 1.8 2 (Ω) a 0.8 1.5 0.6 2.5 1 0.4 3 4.5 0.5 0.2 0 0 0 0.5 1 1.5 2 2.5 -60 0 60 120 180 ID (A) Tj (°C) Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain-source on-state resistance of drain current; typical values factor as a function of junction temperature PMR280UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 3 February 2012 6 of 13

PMR280UN NXP Semiconductors N-channel TrenchMOS ultra low level FET 1.2 03aj65 10−3 03am43 VGS(th) (V) ID (A) 0.9 max 10−4 min typ max typ 0.6 min 10−5 0.3 0 10−6 −60 0 60 120 180 0 0.4 0.8 1.2 Tj (°C) VGS (V) I = 0.25 mA; V = V D DS GS Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of junction temperature gate-source voltage 102 03an06 1 03an05 IS VGS = 0 V (A) C Ciss 0.8 (pF) 0.6 10 Coss Crss 0.4 150 °C T = 25 °C j 0.2 1 0 10−1 1 10 102 0 0.5 1 1.5 VDS (V) VSD (V) Fig 11. Input, output and reverse transfer capacitances Fig 12. Source current as a function of source-drain as a function of drain-source voltage; typical voltage; typical values values PMR280UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 3 February 2012 7 of 13

PMR280UN NXP Semiconductors N-channel TrenchMOS ultra low level FET 03an07 5 V(VG)S TIDj == 215 A °C VDS = 10 V 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 QG (nC) Fig 13. Gate-source voltage as a function of gate charge; typical values PMR280UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 3 February 2012 8 of 13

PMR280UN NXP Semiconductors N-channel TrenchMOS ultra low level FET 8. Package outline 1.8 0.95 1.4 0.60 3 0.45 0.15 1.75 0.9 1.45 0.7 1 2 0.30 0.25 0.15 0.10 1 Dimensions in mm 04-11-04 Fig 14. Package outline SOT416 (SC-75) 9. Soldering 2.2 1.7 solder lands solder resist 0.85 1 2 solder paste 0.5 (3×) occupied area Dimensions in mm 0.6 (3×) 1.3 sot416_fr Fig 15. Reflow soldering footprint for SOT416 (SC-75) PMR280UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 3 February 2012 9 of 13

PMR280UN NXP Semiconductors N-channel TrenchMOS ultra low level FET 10. Revision history Table 8. Revision his tory Document ID Release date Data sheet status Change notice Supersedes PMR280UN v.2 20120203 Product data sheet - PMR280UN v.1 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. PMR280UN v.1 20040305 Product data sheet - - PMR280UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 3 February 2012 10 of 13

PMR280UN NXP Semiconductors N-channel TrenchMOS ultra low level FET 11. Legal information 11.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without Preview — The document is a preview version only. The document is still limitation specifications and product descriptions, at any time and without subject to formal approval, which may result in modifications or additions. notice. This document supersedes and replaces all information supplied prior NXP Semiconductors does not give any representations or warranties as to to the publication hereof. the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or Draft — The document is a draft version only. The content is still under safety-critical systems or equipment, nor in applications where failure or internal review and subject to formal approval, which may result in malfunction of an NXP Semiconductors product can reasonably be expected modifications or additions. NXP Semiconductors does not give any to result in personal injury, death or severe property or environmental representations or warranties as to the accuracy or completeness of damage. NXP Semiconductors and its suppliers accept no liability for information included herein and shall have no liability for the consequences of inclusion and/or use of NXP Semiconductors products in such equipment or use of such information. applications and therefore such inclusion and/or use is at the customer’s own risk. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended Quick reference data — The Quick reference data is an extract of the for quick reference only and should not be relied upon to contain detailed and product data given in the Limiting values and Characteristics sections of this full information. For detailed and full information see the relevant full data document, and as such is not complete, exhaustive or legally binding. sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the Applications — Applications that are described herein for any of these full data sheet shall prevail. products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the Product specification — The information and data provided in a Product specified use without further testing or modification. data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and Customers are responsible for the design and operation of their applications customer have explicitly agreed otherwise in writing. In no event however, and products using NXP Semiconductors products, and NXP Semiconductors shall an agreement be valid in which the NXP Semiconductors product is accepts no liability for any assistance with applications or customer product deemed to offer functions and qualities beyond those described in the design. It is customer’s sole responsibility to determine whether the NXP Product data sheet. Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate 11.3 Disclaimers design and operating safeguards to minimize the risks associated with their applications and products. Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any NXP Semiconductors does not accept any liability related to any default, representations or warranties, expressed or implied, as to the accuracy or damage, costs or problem which is based on any weakness or default in the completeness of such information and shall have no liability for the customer’s applications or products, or the application or use by customer’s consequences of use of such information. NXP Semiconductors takes no third party customer(s). Customer is responsible for doing all necessary responsibility for the content in this document if provided by an information testing for the customer’s applications and products using NXP source outside of NXP Semiconductors. Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party In no event shall NXP Semiconductors be liable for any indirect, incidental, customer(s). NXP does not accept any liability in this respect. punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or Limiting values — Stress above one or more limiting values (as defined in replacement of any products or rework charges) whether or not such the Absolute Maximum Ratings System of IEC 60134) will cause permanent damages are based on tort (including negligence), warranty, breach of damage to the device. Limiting values are stress ratings only and (proper) contract or any other legal theory. operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Notwithstanding any damages that customer might incur for any reason Characteristics sections of this document is not warranted. Constant or whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards repeated exposure to limiting values will permanently and irreversibly affect customer for the products described herein shall be limited in accordance the quality and reliability of the device. with the Terms and conditions of commercial sale of NXP Semiconductors. PMR280UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 3 February 2012 11 of 13

PMR280UN NXP Semiconductors N-channel TrenchMOS ultra low level FET Terms and conditions of commercial sale — NXP Semiconductors product for such automotive applications, use and specifications, and (b) products are sold subject to the general terms and conditions of commercial whenever customer uses the product for automotive applications beyond sale, as published at http://www.nxp.com/profile/terms, unless otherwise NXP Semiconductors’ specifications such use shall be solely at customer’s agreed in a valid written individual agreement. In case an individual own risk, and (c) customer fully indemnifies NXP Semiconductors for any agreement is concluded only the terms and conditions of the respective liability, damages or failed product claims resulting from customer design and agreement shall apply. NXP Semiconductors hereby expressly objects to use of the product for automotive applications beyond NXP Semiconductors’ applying the customer’s general terms and conditions with regard to the standard warranty and NXP Semiconductors’ product specifications. purchase of NXP Semiconductors products by customer. Translations — A non-English (translated) version of a document is for No offer to sell or license — Nothing in this document may be interpreted or reference only. The English version shall prevail in case of any discrepancy construed as an offer to sell products that is open for acceptance or the grant, between the translated and English versions. conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.4 Trademarks Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior Notice: All referenced brands, product names, service names and trademarks authorization from competent authorities. are the property of their respective owners. Non-automotive qualified products — Unless this data sheet expressly Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, states that this specific NXP Semiconductors product is automotive qualified, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, the product is not suitable for automotive use. It is neither qualified nor tested ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, in accordance with automotive testing or application requirements. NXP QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, Semiconductors accepts no liability for inclusion and/or use of TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. non-automotive qualified products in automotive equipment or applications. HD Radio and HD Radio logo — are trademarks of iBiquity Digital In the event that customer uses the product for design-in and use in Corporation. automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMR280UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 3 February 2012 12 of 13

PMR280UN NXP Semiconductors N-channel TrenchMOS ultra low level FET 13. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .1 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5 8 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . .9 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .11 11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11 11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11 11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 12 Contact information. . . . . . . . . . . . . . . . . . . . . .12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 February 2012 Document identifier: PMR280UN