PMPB48EP 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection 1.3 Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portable devices • Hard disk and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 °C - - -30 V DS j V gate-source voltage -20 - 20 V GS ID drain current VGS = -10 V; Tamb = 25 °C; t ≤ 5 s [1] - - -6.8 A Static characteristics R drain-source on-state V = -10 V; I = -4.7 A; T = 25 °C - 40 50 mΩ DSon GS D j resistance [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.

Nexperia PMPB48EP 30 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain D 1 6 2 D drain 7 2 5 G 3 G gate 3 4 4 S source 8 S 017aaa257 5 D drain Transparent top view DFN2020MD-6 (SOT1220) 6 D drain 7 D drain 8 S source 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMPB48EP DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no SOT1220 leads; 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMPB48EP 1U 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 °C - -30 V DS j V gate-source voltage -20 20 V GS ID drain current VGS = -10 V; Tamb = 25 °C; t ≤ 5 s [1] - -6.8 A VGS = -10 V; Tamb = 25 °C [1] - -4.7 A VGS = -10 V; Tamb = 100 °C [1] - -3 A I peak drain current T = 25 °C; single pulse; t ≤ 10 µs - -19 A DM amb p Ptot total power dissipation Tamb = 25 °C [1] - 1.7 W PMPB48EP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 10 September 2012 2 / 14

Nexperia PMPB48EP 30 V, single P-channel Trench MOSFET Symbol Parameter Conditions Min Max Unit Tamb = 25 °C; t ≤ 5 s [1] - 3.5 W T = 25 °C - 12.5 W sp T junction temperature -55 150 °C j T ambient temperature -55 150 °C amb T storage temperature -65 150 °C stg Source-drain diode IS source current Tamb = 25 °C [1] - -1.8 A [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 017aaa123 017aaa124 120 120 Pder Ider (%) (%) 80 80 40 40 0 0 -75 -25 25 75 125 175 -75 -25 25 75 125 175 Tj(°C) Tj(°C) Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a function of junction temperature function of junction temperature PMPB48EP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 10 September 2012 3 / 14

Nexperia PMPB48EP 30 V, single P-channel Trench MOSFET -102 017aaa772 ID Limit RDSon = VDS/ID (A) -10 tp = 100 µs tp = 1 ms -1 tp = 10 ms DC; Tsp = 25 °C -10-1 DC; Tamb = 25 °C; tp = 100 ms drain mounting pad 6 cm2 -10-2 -10-2 -10-1 -1 -10 -102 VDS (V) I = single pulse DM Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain- source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance in free air [1] - 235 270 K/W from junction to [2] - 67 74 K/W ambient in free air; t ≤ 5 s [2] - 33 36 K/W R thermal resistance - 5 10 K/W th(j-sp) from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMPB48EP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 10 September 2012 4 / 14

Nexperia PMPB48EP 30 V, single P-channel Trench MOSFET 103 017aaa542 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 10 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 017aaa543 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 103 tp (s) 2 FR4 PCB, mounting pad for drain 6 cm Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I = -250 µA; V = 0 V; T = 25 °C -30 - - V (BR)DSS D GS j breakdown voltage V gate-source threshold I = -250 µA; V = V ; T = 25 °C -1 -1.5 -2.5 V GSth D DS GS j voltage I drain leakage current V = -30 V; V = 0 V; T = 25 °C - - -1 µA DSS DS GS j I gate leakage current V = -20 V; V = 0 V; T = 25 °C - - -100 nA GSS GS DS j PMPB48EP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 10 September 2012 5 / 14

Nexperia PMPB48EP 30 V, single P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit V = 20 V; V = 0 V; T = 25 °C - - 100 nA GS DS j R drain-source on-state V = -10 V; I = -4.7 A; T = 25 °C - 40 50 mΩ DSon GS D j resistance V = -10 V; I = -4.7 A; T = 150 °C - 60 75 mΩ GS D j V = -4.5 V; I = -3.9 A; T = 25 °C - 55 76 mΩ GS D j g forward V = -10 V; I = -4.7 A; T = 25 °C - 15 - S fs DS D j transconductance R gate resistance f = 1 MHz - 6 - Ω G Dynamic characteristics Q total gate charge V = -15 V; I = -4.7 A; V = -10 V; - 17 26 nC G(tot) DS D GS T = 25 °C Q gate-source charge j - 2.5 - nC GS Q gate-drain charge - 3.2 - nC GD C input capacitance V = -15 V; f = 1 MHz; V = 0 V; - 860 - pF iss DS GS T = 25 °C C output capacitance j - 105 - pF oss C reverse transfer - 87 - pF rss capacitance t turn-on delay time V = -15 V; I = -4.7 A; V = -10 V; - 7.4 - ns d(on) DS D GS R = 6 Ω; T = 25 °C t rise time G(ext) j - 17.5 - ns r t turn-off delay time - 27 - ns d(off) t fall time - 10.4 - ns f Source-drain diode V source-drain voltage I = -1.8 A; V = 0 V; T = 25 °C - -0.8 -1.2 V SD S GS j -20 017aaa773 -10-2 017aaa774 ID -10V -4.5V -4V ID (A) (A) -16 -10-3 VGS=-3.6V -12 min typ max -10-4 -8 -3.3V -10-5 -3V -4 -2.7V -2.5V 0 -10-6 0 -1 -2 -3 -4 0 -1 -2 -3 -4 VDS (V) VGS (V) T = 25 °C T = 25 °C; V = -5 V j j DS Fig. 6. Output characteristics: drain current as a Fig. 7. Sub-threshold drain current as a function of function of drain-source voltage; typical values gate-source voltage PMPB48EP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 10 September 2012 6 / 14

Nexperia PMPB48EP 30 V, single P-channel Trench MOSFET 017aaa775 017aaa776 0.18 250 -3.2V -3.3V -4V -3.4V RDSon RDSon -3.5V (mΩ) (Ω) -3.6V 200 0.12 150 -4.5V 100 0.06 Tj=150°C VGS=-10V 50 Tj=25°C 0 0 0 -5 -10 -15 -20 -25 0 -4 -8 -12 ID (A) VGS (V) T = 25 °C I = -3 A j D Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function of drain current; typical values of gate-source voltage; typical values 017aaa777 017aaa778 -24 1.8 ID a (A) -16 1.4 -8 1.0 Tj=150°C Tj=25°C 0 0.6 0 -1 -2 -3 -4 -5 -60 0 60 120 180 VGS (V) Tj (°C) V > I × R DS D DSon Fig. 11. Normalized drain-source on-state resistance Fig. 10. Transfer characteristics: drain current as a as a function of junction temperature; typical function of gate-source voltage; typical values values PMPB48EP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 10 September 2012 7 / 14

Nexperia PMPB48EP 30 V, single P-channel Trench MOSFET -4 017aaa779 104 017aaa780 VGS(th) (V) C (pF) -3 103 Ciss max -2 typ 102 Coss -1 Crss min 0 10 -60 0 60 120 180 -10-1 -1 -10 -102 Tj (°C) VDS (V) I = -0.25 mA; V = V f = 1 MHz; V = 0 V D DS GS GS Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances junction temperature as a function of drain-source voltage; typical values 017aaa781 -10 VGS VDS (V) -8 ID VGS(pl) -6 VGS(th) -4 VGS QGS1 QGS2 -2 QGS QGD QG(tot) 017aaa137 0 0 5 10 15 20 Fig. 15. Gate charge waveform definitions QG (nC) I = -3.5 A; V = -15 V; T = 25 °C D DS amb Fig. 14. Gate-source voltage as a function of gate charge; typical values PMPB48EP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 10 September 2012 8 / 14

Nexperia PMPB48EP 30 V, single P-channel Trench MOSFET 017aaa782 -3 IS (A) -2 -1 Tj=150°C Tj=25°C 0 0 -0.25 -0.50 -0.75 -1.00 VSD (V) V = 0 V GS Fig. 16. Source current as a function of source-drain voltage; typical values 8. Test information P dutycycleδ= t1 t2 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 9. Package outline 0.51 0.2 0.61 0.3 0.2 0.3 3 4 1.9 0.25 2 5 2.1 1.0 0.35 1.2 1 6 1.1 0.65 1.3 1.9 2.1 Dimensions in mm 12-04-30 Fig. 18. Package outline DFN2020MD-6 (SOT1220) PMPB48EP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 10 September 2012 9 / 14

Nexperia PMPB48EP 30 V, single P-channel Trench MOSFET 10. Soldering Footprint information for reflow soldering of DFN2020MD-6 package SOT1220 0.33(6×) 0.76 0.43(6×) 0.66 0.53(6×) 0.56 0.25 0.35 0.45 0.775 0.65 2.06 0.285 1.25 0.35(6×) 0.65 1.35 1.05 0.25(6×) 0.45(6×) 0.9 1.1 1.2 0.935 0.935 2.5 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot1220_fr Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220) PMPB48EP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 10 September 2012 10 / 14

Nexperia PMPB48EP 30 V, single P-channel Trench MOSFET 11. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMPB48EP v.1 20120910 Product data sheet - - PMPB48EP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 10 September 2012 11 / 14

Nexperia PMPB48EP 30 V, single P-channel Trench MOSFET In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - 12. 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No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the PMPB48EP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 10 September 2012 12 / 14

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Nexperia PMPB48EP 30 V, single P-channel Trench MOSFET 13. Contents 1 Product profile .......................................................1 1.1 General description ..............................................1 1.2 Features and benefits ...........................................1 1.3 Applications ..........................................................1 1.4 Quick reference data ............................................1 2 Pinning information ...............................................2 3 Ordering information .............................................2 4 Marking ...................................................................2 5 Limiting values .......................................................2 6 Thermal characteristics .........................................4 7 Characteristics .......................................................5 8 Test information .....................................................9 9 Package outline .....................................................9 10 Soldering ..............................................................10 11 Revision history ...................................................11 12 Legal information .................................................12 12.1 Data sheet status ...............................................12 12.2 Definitions ...........................................................12 12.3 Disclaimers .........................................................12 12.4 Trademarks ........................................................13 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 10 September 2012 PMPB48EP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 10 September 2012 14 / 14