Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

PMP4201V; PMP4201G; PMP4201Y NPN/NPN matched double transistors Rev. 04 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic packages.ThetransistorsintheSOT666andSOT363(SC-88)packagesarefullyisolated internally. Table 1. Product overview Type number Package NPN/NPN h /h PNP/PNP FE1 FE2 0.95 complement complement NXP JEITA PMP4201V SOT666 - PMP4501V PMP5201V PMP4201G SOT353 SC-88A PMP4501G PMP5201G PMP4201Y SOT363 SC-88 PMP4501Y PMP5201Y 1.2 Features n Current gain matching n Base-emitter voltage matching n Common emitter configuration for SOT353 types n Application-optimized pinout 1.3 Applications n Current mirror n Differential amplifier 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - 45 V CEO I collector current - - 100 mA C h DCcurrent gain V =5V; 200 290 450 FE CE I =2mA C

PMP4201V; PMP4201G; PMP4201Y NXP Semiconductors NPN/NPN matched double transistors Table 2. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Per device h /h h matching V =5V; [1] 0.98 1 - FE1 FE2 FE CE I =2mA C V - V V matching V =5V; [2] - - 2 mV BE1 BE2 BE CE I =2mA C [1] The smaller of the two values is taken as the numerator. [2] The smaller of the two values is subtracted from the larger value. 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol SOT666; SOT363 1 base TR1 6 5 4 6 5 4 2 base TR2 TR1 3 collector TR2 TR2 4 emitter TR2 5 emitter TR1 1 2 3 1 2 3 006aaa548 6 collector TR1 001aab555 SOT353 1 base TR1 5 4 5 4 2 emitter TR1, TR2 3 base TR2 TR1 TR2 4 collector TR2 5 collector TR1 1 2 3 1 2 3 006aaa549 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PMP4201V - plastic surface-mounted package; 6leads SOT666 PMP4201G SC-88A plastic surface-mounted package; 5leads SOT353 PMP4201Y SC-88 plastic surface-mounted package; 6leads SOT363 PMP4201V_G_Y_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 28 August 2009 2 of 14

PMP4201V; PMP4201G; PMP4201Y NXP Semiconductors NPN/NPN matched double transistors 4. Marking Table 5. Marking codes Type number Marking code[1] PMP4201V EA PMP4201G R7* PMP4201Y S7* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 45 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 100 mA C I peak collector current single pulse; - 200 mA CM t £ 1ms p P total power dissipation T £ 25(cid:176) C tot amb SOT666 [1][2] - 200 mW SOT353 [1] - 200 mW SOT363 [1] - 200 mW Per device P total power dissipation T £ 25(cid:176) C tot amb SOT666 [1][2] - 300 mW SOT353 [1] - 300 mW SOT363 [1] - 300 mW T junction temperature - 150 (cid:176) C j T ambient temperature - 65 +150 (cid:176) C amb T storage temperature - 65 +150 (cid:176) C stg [1] Device mounted on an FR4Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. PMP4201V_G_Y_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 28 August 2009 3 of 14

PMP4201V; PMP4201G; PMP4201Y NXP Semiconductors NPN/NPN matched double transistors 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor R thermal resistance from in free air th(j-a) junction to ambient SOT666 [1][2] - - 625 K/W SOT353 [1] - - 625 K/W SOT363 [1] - - 625 K/W Per device R thermal resistance from in free air th(j-a) junction to ambient SOT666 [1][2] - - 416 K/W SOT353 [1] - - 416 K/W SOT363 [1] - - 416 K/W [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 7. Characteristics Table 8. Characteristics T =25(cid:176) C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit Per transistor I collector-base cut-off V =30V; - - 15 nA CBO CB current I =0A E V =30V; - - 5 m A CB I =0A; E T =150(cid:176) C j I emitter-base cut-off V =5V; - - 100 nA EBO EB current I =0A C h DCcurrent gain V =5V; - 250 - FE CE I =10m A C V =5V; 200 290 450 CE I =2mA C V collector-emitter I =10mA; - 50 200 mV CEsat C saturation voltage I =0.5mA B I =100mA; - 200 400 mV C I =5mA B V base-emittersaturation I =10mA; [1] - 760 - mV BEsat C voltage I =0.5mA B I =100mA; [1] - 910 - mV C I =5mA B PMP4201V_G_Y_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 28 August 2009 4 of 14

PMP4201V; PMP4201G; PMP4201Y NXP Semiconductors NPN/NPN matched double transistors Table 8. Characteristics …continued T =25(cid:176) C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit V base-emitter voltage V =5V; [2] 610 660 710 mV BE CE I =2mA C V =5V; [2] - - 770 mV CE I =10mA C C collector capacitance V =10V; - - 1.5 pF c CB I =i =0A; E e f=1MHz C emitter capacitance V =0.5V; - 11 - pF e EB I =i =0A; C c f=1MHz f transition frequency V =5V; 100 250 - MHz T CE I =10mA; C f=100MHz NF noise figure V =5V; - 2.8 - dB CE I =0.2mA; C R =2kW ; S f=10Hz to 15.7kHz V =5V; - 3.3 - dB CE I =0.2mA; C R =2kW ; S f=1kHz; B=200Hz Per device h /h h matching V =5V; [3] 0.98 1 - FE1 FE2 FE CE I =2mA C V - V V matching V =5V; [4] - - 2 mV BE1 BE2 BE CE I =2mA C [1] V decreases by about 1.7mV/K with increasing temperature. BEsat [2] V decreases by about 2mV/K with increasing temperature. BE [3] The smaller of the two values is taken as the numerator. [4] The smaller of the two values is subtracted from the larger value. PMP4201V_G_Y_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 28 August 2009 5 of 14

PMP4201V; PMP4201G; PMP4201Y NXP Semiconductors NPN/NPN matched double transistors 006aaa532 006aaa533 0.20 600 IB (mA) = 4.50 IC 4.05 (A) 33..1650 hFE 0.16 2.70 2.25 1.80 400 (1) 0.12 1.35 0.90 (2) 0.08 0.45 200 (3) 0.04 0 0 0 2 4 6 8 10 10- 2 10- 1 1 10 102 103 VCE (V) IC (mA) T =25(cid:176) C V =5V amb CE (1) T =100(cid:176) C amb (2) T =25(cid:176) C amb (3) T =- 55(cid:176) C amb Fig 1. Collector current as a function of Fig 2. DCcurrent gain as a function of collector collector-emitter voltage; typical values current; typical values 006aaa534 006aaa535 1.3 10 VBEsat (V) 1.1 VCEsat (V) 0.9 1 (1) 0.7 (2) (3) 0.5 10- 1 (1) 0.3 (2) (3) 0.1 10- 2 10- 1 1 10 102 103 10- 1 1 10 102 103 IC (mA) IC (mA) I /I =20 I /I =20 C B C B (1) T =- 55(cid:176) C (1) T =100(cid:176) C amb amb (2) T =25(cid:176) C (2) T =25(cid:176) C amb amb (3) T =100(cid:176) C (3) T =- 55(cid:176) C amb amb Fig 3. Base-emitter saturation voltage as a function Fig 4. Collector-emitter saturation voltage as a of collector current; typical values function of collector current; typical values PMP4201V_G_Y_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 28 August 2009 6 of 14

PMP4201V; PMP4201G; PMP4201Y NXP Semiconductors NPN/NPN matched double transistors 1 006aaa536 103 006aaa537 VBE (V) fT (MHz) 0.8 102 0.6 0.4 10 10- 1 1 10 102 103 1 10 102 IC (mA) IC (mA) V =5V; T =25(cid:176) C V =5V; T =25(cid:176) C CE amb CE amb Fig 5. Base-emittervoltageasafunctionofcollector Fig 6. Transitionfrequencyasafunctionofcollector current; typical values current; typical values 006aaa538 006aaa539 5 15 Cc Ce (pF) (pF) 4 13 3 11 2 9 1 7 0 5 0 2 4 6 8 10 0 2 4 6 VCB (V) VEB (V) f=1MHz; T =25(cid:176) C f=1MHz; T =25(cid:176) C amb amb Fig 7. Collector capacitance as a function of Fig 8. Emitter capacitance as a function of collector-base voltage; typical values emitter-base voltage; typical values PMP4201V_G_Y_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 28 August 2009 7 of 14

PMP4201V; PMP4201G; PMP4201Y NXP Semiconductors NPN/NPN matched double transistors 8. Application information V+ VCC OUT1 OUT2 R1 IN1 TR1 TR2 IN2 lout TR1 TR2 V- 006aaa523 006aaa525 Fig 9. Current mirror Fig 10. Differential amplifier 9. Package outline 1.7 0.6 2.2 1.1 1.5 0.5 1.8 0.8 6 5 4 5 4 0.45 0.15 0.3 0.1 1.7 1.3 2.2 1.35 1.5 1.1 2.0 1.15 pin 1 index 1 2 3 1 2 3 0.5 00..2177 00..1088 0.65 00..32 00..2150 1 1.3 Dimensions in mm 04-11-08 Dimensions in mm 04-11-16 Fig 11. Package outline SOT666 Fig 12. Package outline SOT353 (SC-88A) 2.2 1.1 1.8 0.8 6 5 4 0.45 0.15 2.2 1.35 2.0 1.15 pin 1 index 1 2 3 0.3 0.25 0.65 0.2 0.10 1.3 Dimensions in mm 06-03-16 Fig 13. Package outline SOT363 (SC-88) PMP4201V_G_Y_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 28 August 2009 8 of 14

PMP4201V; PMP4201G; PMP4201Y NXP Semiconductors NPN/NPN matched double transistors 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type Package Description Packing quantity number 3000 4000 8000 10000 PMP4201V SOT666 2mm pitch, 8mm tape and reel - - -315 - 4mm pitch, 8mm tape and reel - -115 - - PMP4201G SOT353 4mm pitch, 8mm tape and reel -115 - - -135 PMP4201Y SOT363 4mm pitch, 8mm tape and reel; T1 [2] -115 - - -135 4mm pitch, 8mm tape and reel; T2 [3] -125 - - -165 [1] For further information and the availability of packing methods, seeSection14. [2] T1: normal taping [3] T2: reverse taping 11. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6· ) 0.25 0.3 0.538 (2· ) (2· ) placement area 0.55 2 1.7 1.075 (2· ) solder paste occupied area 0.325 0.375 (4· ) (4· ) Dimensions in mm 1.7 0.45 0.6 (4· ) (2· ) 0.5 0.65 (4· ) (2· ) sot666_fr Reflow soldering is the only recommended soldering method. Fig 14. Reflow soldering footprint SOT666 PMP4201V_G_Y_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 28 August 2009 9 of 14

PMP4201V; PMP4201G; PMP4201Y NXP Semiconductors NPN/NPN matched double transistors 2.65 0.60 (1· ) 2.35 0.40 0.90 2.10 solder lands 0.50 solder paste (4· ) solder resist 0.50 occupied area (4· ) 1.20 2.40 msa366 Dimensions in mm Fig 15. Reflow soldering footprint SOT353 (SC-88A) 4.9 2.25 1.5 solder lands 1 0.85 solder resist 4.5 2.5 occupied area 0.85 1 Dimensions in mm 1.5 preferred transport direction during soldering 1.3 1.3 1.225 1.225 sot353_fw Dimensions in mm Fig 16. Wave soldering footprint SOT353 (SC-88A) PMP4201V_G_Y_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 28 August 2009 10 of 14

PMP4201V; PMP4201G; PMP4201Y NXP Semiconductors NPN/NPN matched double transistors 2.65 solder lands 2.35 1.5 0.6 0.5 0.4 (2· ) (4· ) (4· ) solder resist solder paste 0.5 0.6 occupied area (4· ) (2· ) 0.6 Dimensions in mm (4· ) 1.8 sot363_fr Fig 17. Reflow soldering footprint SOT363 (SC-88) 1.5 solder lands 4.5 0.3 2.5 solder resist occupied area 1.5 Dimensions in mm preferred transport 1.3 1.3 direction during soldering 2.45 5.3 sot363_fw Fig 18. Wave soldering footprint SOT363 (SC-88) PMP4201V_G_Y_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 28 August 2009 11 of 14

PMP4201V; PMP4201G; PMP4201Y NXP Semiconductors NPN/NPN matched double transistors 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PMP4201V_G_Y_4 20090828 Product data sheet - PMP4201V_G_Y_3 Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 14 “Reflow soldering footprint SOT666”: updated • Figure 16 “Wave soldering footprint SOT353 (SC-88A)”: updated • Figure 17 “Reflow soldering footprint SOT363 (SC-88)”: updated • Figure 18 “Wave soldering footprint SOT363 (SC-88)”: updated PMP4201V_G_Y_3 20060915 Product data sheet - PMP4201G_Y_2 PMP4201G_Y_2 20060214 Product data sheet - PMP4201G_Y_1 PMP4201G_Y_1 20060131 Product data sheet - - PMP4201V_G_Y_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 28 August 2009 12 of 14

PMP4201V; PMP4201G; PMP4201Y NXP Semiconductors NPN/NPN matched double transistors 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. 13.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications —Applications that are described herein for any of these modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the informationincludedhereinandshallhavenoliabilityfortheconsequencesof specified use without further testing or modification. use of such information. Limiting values —Stress above one or more limiting values (as defined in Short data sheet —A short data sheet is an extract from a full data sheet theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand the device at these or any other conditions above those given in the full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability. office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale —NXP Semiconductors products are sold full data sheet shall prevail. subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, 13.3 Disclaimers intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such General —Information in this document is believed to be accurate and terms and conditions, the latter will prevail. reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor No offer to sell or license —Nothing in this document may be interpreted warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch or construed as an offer to sell products that is open for acceptance or the information and shall have no liability for the consequences of use of such grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents information. or other industrial or intellectual property rights. Right to make changes —NXPSemiconductorsreservestherighttomake Export control —This document as well as the item(s) described herein changes to information published in this document, including without may be subject to export control regulations. Export might require a prior limitation specifications and product descriptions, at any time and without authorization from national authorities. notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. Quick reference data —The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this Suitability for use —NXP Semiconductors products are not designed, document, and as such is not complete, exhaustive or legally binding. authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected 13.4 Trademarks to result in personal injury, death or severe property or environmental Notice:Allreferencedbrands,productnames,servicenamesandtrademarks are the property of their respective owners. 14. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com PMP4201V_G_Y_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 28 August 2009 13 of 14

PMP4201V; PMP4201G; PMP4201Y NXP Semiconductors NPN/NPN matched double transistors 15. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Application information. . . . . . . . . . . . . . . . . . . 8 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14 Contact information. . . . . . . . . . . . . . . . . . . . . 13 15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 28 August 2009 Document identifier: PMP4201V_G_Y_4