PMN48XP 20 V, 4.1 A P-channel Trench MOSFET Rev. 1 — 21 April 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Low R  Trench MOSFET technology DSon  Very fast switching 1.3 Applications  Relay driver  High-side loadswitch  High-speed line driver  Switching circuits 1.4 Quick reference data Table 1. Quick refere nce data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T =25°C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V =-4.5V; T =25°C [1] - - -4.1 A D GS amb Static characteristics R drain-source on-state V =-4.5V; I =-2.4A; T =25°C - 48 55 mΩ DSon GS D j resistance [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 D drain 6 5 4 D 2 D drain 3 G gate G 4 S source 1 2 3 5 D drain SOT457 (TSOP6) S 6 D drain 017aaa094

PMN48XP Nexperia 20 V, 4.1 A P-channel Trench MOSFET 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version PMN48XP TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4. Marking cod es Type number Marking code PMN48XP ZV 5. Limiting values Table 5. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25°C - -20 V DS j V gate-source voltage -12 12 V GS I drain current V =-4.5V; T =25°C [1] - -4.1 A D GS amb V =-4.5V; T =100°C [1] - -2.5 A GS amb I peak drain current T =25°C; single pulse; t ≤10µs - -20 A DM amb p P total power dissipation T =25°C [2] - 530 mW tot amb [1] - 1285 mW T =25°C - 6250 mW sp T junction temperature -55 150 °C j T ambient temperature -55 150 °C amb T storage temperature -65 150 °C stg Source-drain diode I source current T =25°C [1] - -1.4 A S amb [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. PMN48XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 21 April 2011 2 of 15

PMN48XP Nexperia 20 V, 4.1 A P-channel Trench MOSFET 017aaa123 017aaa124 120 120 Pder Ider (%) (%) 80 80 40 40 0 0 −75 −25 25 75 125 175 −75 −25 25 75 125 175 Tj (°C) Tj (°C) Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a function of junction temperature function of junction temperature PMN48XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 21 April 2011 3 of 15

PMN48XP Nexperia 20 V, 4.1 A P-channel Trench MOSFET –102 017aaa202 ID (A) Limit RDSon = VDS/ID –10 (1) (2) –1 (3) (4) (5) –10–1 (6) –10–2 –10–1 –1 –10 –102 VDS (V) I = single pulse DM (1) t = 100 µs p (2) t = 1 ms p (3) t = 10 ms p (4) DC; T = 25 °C sp (5) t = 100 ms p (6) DC; T = 25 °C; drain mounting pad 6 cm2 amb Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMN48XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 21 April 2011 4 of 15

PMN48XP Nexperia 20 V, 4.1 A P-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance in free air [1] - 204 235 K/W th(j-a) from junction to [2] - 84 97 K/W ambient R thermal resistance - 17 20 K/W th(j-sp) from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. 103 017aaa203 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.25 0.2 0.1 0.05 10 0.02 0.01 0 1 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 017aaa204 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 10 0.1 0.05 0.02 0 0.01 1 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN48XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 21 April 2011 5 of 15

PMN48XP Nexperia 20 V, 4.1 A P-channel Trench MOSFET 7. Characteristics Table 7. Characterist ics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I =-250µA; V =0V; T =25°C -20 - - V (BR)DSS D GS j breakdown voltage V gate-source threshold I =-250µA; V =V ; T =25°C -0.75 -1 -1.25 V GSth D DS GS j voltage I drain leakage current V =-20V; V =0V; T =25°C - - -1 µA DSS DS GS j V =-20V; V =0V; T =150°C - - -10 µA DS GS j I gate leakage current V =-12V; V =0V; T =25°C - - -100 nA GSS GS DS j R drain-source on-state V =-4.5V; I =-2.4A; T =25°C - 48 55 mΩ DSon GS D j resistance V =-4.5V; I =-2.4A; T =150°C - 70 80 mΩ GS D j V =-2.5V; I =-2A; T =25°C - 72 82 mΩ GS D j g forward V =-5V; I =-2.4A; T =25°C - 10 - S fs DS D j transconductance Dynamic characteristics Q total gate charge I =-1A; V =-10V; V =-4.5V; - 8.7 13 nC G(tot) D DS GS T =25°C Q gate-source charge j - 1.8 - nC GS Q gate-drain charge - 1.7 - nC GD C input capacitance V =0V; V =-10V; f=1MHz; - 1000 - pF iss GS DS T =25°C C output capacitance j - 130 - pF oss C reverse transfer - 90 - pF rss capacitance t turn-on delay time V =-10V; V =-5V; R =6Ω; - 15 - ns d(on) DS GS G(ext) T =25°C; I =-1A t rise time j D - 22 - ns r t turn-off delay time - 51 - ns d(off) t fall time - 22 - ns f Source-drain diode V source-drain voltage I =-2.4A; V =0V; T =25°C - -0.75 -1 V SD S GS j PMN48XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 21 April 2011 6 of 15

PMN48XP Nexperia 20 V, 4.1 A P-channel Trench MOSFET –14 017aaa205 −10−3 017aaa129 ID –4.5 V (A) –2.5 V –12 ID VGS = –2.75 V (A) –10 −10−4 –8 (1) (2) (3) –2 V –6 −10−5 –4 –1.6 V –2 0 −10−6 0 –1 –2 –3 –4 –5 0.0 −0.5 −1.0 − 1.5 VDS (V) VGS (V) Tj = 25 °C Tj = 25 °C; VDS = -3 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a Fig 7. Sub-threshold drain current as a function of function of drain-source voltage; typical values gate-source voltage 160 017aaa206 0.25 017aaa131 R(mDSΩo)n R(DΩS)on (1) (2) 0.20 120 0.15 80 (3) (4) 0.10 (1) (5) 40 0.05 (2) 0 0.00 0 –2 –4 –6 –8 –10 –12 –14 0 −1 −2 −3 −4 −5 ID (A) VGS (V) Tj = 25 °C ID = -2.4 A (1) VGS = -1.6 V (1) Tj = 125 °C (2) VGS = -2.0 V (2) Tj = 25 °C (3) V = -2.5 V GS (4) V = -2.75 V GS (5) V = -4.5 V GS Fig 8. Drain-source on-state resistance as a function Fig 9. Drain-source on-state resistance as a function of drain current; typical values of gate-source voltage; typical values PMN48XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 21 April 2011 7 of 15

PMN48XP Nexperia 20 V, 4.1 A P-channel Trench MOSFET –14 017aaa207 2.0 017aaa133 ID (A) (1) (2) a –12 1.5 –10 –8 1.0 –6 –4 0.5 –2 (2) (1) 0 0.0 0 –1 –2 –3 −60 0 60 120 180 VGS (V) Tj (°C) V > I × R DS D DSon (1) T = 25 °C j (2) T = 150 °C j Fig 10. Transfer characteristics: drain current as a Fig 11. Normalized drain-source on-state resistance as function of gate-source voltage; typical values a function of junction temperature; typical values −1.6 017aaa134 104 017aaa135 VGS(th) C (V) (pF) (1) −1.2 (1) 103 (2) −0.8 (2) (3) 102 (3) −0.4 0.0 10 −60 0 60 120 180 –10–1 –1 –10 –102 Tj (°C) VDS (V) I = -0.25 mA; V = V f = 1 MHz; V = 0 V D DS GS GS (1) maximum values (1) C iss (2) typical values (2) C oss (3) minimum values (3) C rss Fig 12. Gate-source threshold voltage as a function of Fig 13. Input, output and reverse transfer capacitances junction temperature as a function of drain-source voltage; typical values PMN48XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 21 April 2011 8 of 15

PMN48XP Nexperia 20 V, 4.1 A P-channel Trench MOSFET −4.5 017aaa136 VDS VGS (V) ID −3.0 VGS(pl) VGS(th) VGS −1.5 QGS1 QGS2 QGS QGD QG(tot) 017aaa137 0.0 0 2 4 6 8 10 QG (nC) I = -2.4 A; V = -10 V; T = 25 °C D DS amb Fig 14. Gate-source voltage as a function of gate Fig 15. Gate charge waveform definitions charge; typical values −14 017aaa138 IS (A) −12 −10 −8 (1) (2) −6 −4 −2 0 0.0 −0.4 −0.8 −1.2 VSD (V) V = 0 V GS (1) T = 150 °C j (2) T = 25 °C j Fig 16. Source current as a function of source-drain voltage; typical values PMN48XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 21 April 2011 9 of 15

PMN48XP Nexperia 20 V, 4.1 A P-channel Trench MOSFET 8. Package outline Plastic surface-mounted package (TSOP6); 6 leads SOT457 D B E A X y HE v M A 6 5 4 Q pin 1 index A A1 c 1 2 3 Lp e bp w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y 1.1 0.1 0.40 0.26 3.1 1.7 3.0 0.6 0.33 mm 0.95 0.2 0.2 0.1 0.9 0.013 0.25 0.10 2.7 1.3 2.5 0.2 0.23 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 05-11-07 SOT457 SC-74 06-03-16 Fig 17. Package outline SOT457 (TSOP6) PMN48XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 21 April 2011 10 of 15

PMN48XP Nexperia 20 V, 4.1 A P-channel Trench MOSFET 9. Soldering 3.45 1.95 0.45 0.55 solder lands 0.95 (6×) (6×) 3.3 2.825 solder resist 0.95 solder paste occupied area 0.7 Dimensions in mm (6×) 0.8 (6×) 2.4 sot457_fr Fig 18. Reflow soldering footprint for SOT457 (TSOP6) 5.3 1.5 (4×) solder lands 1.475 solder resist 0.45 5.05 (2×) occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig 19. Wave soldering footprint for SOT457 (TSOP6) PMN48XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 21 April 2011 11 of 15

PMN48XP Nexperia 20 V, 4.1 A P-channel Trench MOSFET 10. Revision history Table 8. Revision his tory Document ID Release date Data sheet status Change notice Supersedes PMN48XP v.1 20110421 Product data sheet - - PMN48XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 21 April 2011 12 of 15

PMN48XP Nexperia 20 V, 4.1 A P-channel Trench MOSFET 11. Legal information 11.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 11.2 Definitions Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without Preview — The document is a preview version only. The document is still limitation specifications and product descriptions, at any time and without subject to formal approval, which may result in modifications or additions. notice. This document supersedes and replaces all information supplied prior Nexperia does not give any representations or warranties as to to the publication hereof. the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or Draft — The document is a draft version only. The content is still under safety-critical systems or equipment, nor in applications where failure or internal review and subject to formal approval, which may result in malfunction of a Nexperia product can reasonably be expected modifications or additions. Nexperia does not give any to result in personal injury, death or severe property or environmental representations or warranties as to the accuracy or completeness of damage. Nexperia accepts no liability for inclusion and/or use of information included herein and shall have no liability for the consequences of Nexperia products in such equipment or applications and use of such information. therefore such inclusion and/or use is at the customer’s own risk. Short data sheet — A short data sheet is an extract from a full data sheet Quick reference data — The Quick reference data is an extract of the with the same product type number(s) and title. A short data sheet is intended product data given in the Limiting values and Characteristics sections of this for quick reference only and should not be relied upon to contain detailed and document, and as such is not complete, exhaustive or legally binding. full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales Applications — Applications that are described herein for any of these office. In case of any inconsistency or conflict with the short data sheet, the products are for illustrative purposes only. Nexperia makes no full data sheet shall prevail. representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Customers are responsible for the design and operation of their applications Nexperia and its customer, unless Nexperia and and products using Nexperia products, and Nexperia customer have explicitly agreed otherwise in writing. In no event however, accepts no liability for any assistance with applications or customer product shall an agreement be valid in which the Nexperia product is design. It is customer’s sole responsibility to determine whether the Nexperia deemed to offer functions and qualities beyond those described in the product is suitable and fit for the customer’s applications and Product data sheet. products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their 11.3 Disclaimers applications and products. Limited warranty and liability — Information in this document is believed to Nexperia does not accept any liability related to any default, be accurate and reliable. However, Nexperia does not give any damage, costs or problem which is based on any weakness or default in the representations or warranties, expressed or implied, as to the accuracy or customer’s applications or products, or the application or use by customer’s completeness of such information and shall have no liability for the third party customer(s). Customer is responsible for doing all necessary consequences of use of such information. testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and In no event shall Nexperia be liable for any indirect, incidental, the products or of the application or use by customer’s third party punitive, special or consequential damages (including - without limitation - lost customer(s). Nexperia does not accept any liability in this respect. profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such Limiting values — Stress above one or more limiting values (as defined in damages are based on tort (including negligence), warranty, breach of the Absolute Maximum Ratings System of IEC 60134) will cause permanent contract or any other legal theory. damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in Notwithstanding any damages that customer might incur for any reason the Recommended operating conditions section (if present) or the whatsoever, Nexperia’s aggregate and cumulative liability towards Characteristics sections of this document is not warranted. Constant or customer for the products described herein shall be limited in accordance repeated exposure to limiting values will permanently and irreversibly affect with the Terms and conditions of commercial sale of Nexperia. the quality and reliability of the device. PMN48XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 21 April 2011 13 of 15

PMN48XP Nexperia 20 V, 4.1 A P-channel Trench MOSFET Terms and conditions of commercial sale — Nexperia In the event that customer uses the product for design-in and use in products are sold subject to the general terms and conditions of commercial automotive applications to automotive specifications and standards, customer sale, as published at http://www.nexperia.com/profile/terms, unless otherwise (a) shall use the product without Nexperia’s warranty of the agreed in a valid written individual agreement. In case an individual product for such automotive applications, use and specifications, and (b) agreement is concluded only the terms and conditions of the respective whenever customer uses the product for automotive applications beyond agreement shall apply. Nexperia hereby expressly objects to Nexperia’s specifications such use shall be solely at customer’s applying the customer’s general terms and conditions with regard to the own risk, and (c) customer fully indemnifies Nexperia for any purchase of Nexperia products by customer. liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s No offer to sell or license — Nothing in this document may be interpreted or standard warranty and Nexperia’s product specifications. construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or 11.4 Trademarks other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may Notice: All referenced brands, product names, service names and trademarks be subject to export control regulations. Export might require a prior are the property of their respective owners. authorization from national authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 12. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com PMN48XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 21 April 2011 14 of 15

PMN48XP Nexperia 20 V, 4.1 A P-channel Trench MOSFET 13. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .1 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 6 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6 8 Package outline. . . . . . . . . . . . . . . . . . . . . . . . .10 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 12 Contact information. . . . . . . . . . . . . . . . . . . . . .14 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 21 April 2011