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DISCRETE SEMICONDUCTORS DATA SHEET PMEGXX10BEA; PMEGXX10BEV 1 A very low V MEGA Schottky F barrier rectifier Product data sheet 2004 Jun 14 Supersedes data of 2004 Apr 02

NXP Semiconductors Product data sheet 1 A very low V MEGA Schottky PMEGXX10BEA; F barrier rectifier PMEGXX10BEV FEATURES QUICK REFERENCE DATA • Forward current: 1 A SYMBOL PARAMETER MAX. UNIT • Reverse voltages: 20 V, 30 V, 40 V I forward current 1 A F • Very low forward voltage V reverse voltage 20; 30; 40 V R • Ultra small and very small plastic SMD package • Power dissipation comparable to SOT23. PINNING PIN DESCRIPTION APPLICATIONS PMEGXX10BEA (see Fig.1) • High efficiency DC-to-DC conversion 1 cathode • Voltage clamping 2 anode • Protection circuits PMEGXX10BEV (see Fig.2) • Low voltage rectification 1, 2, 5, 6 cathode • Blocking diodes 3, 4 anode • Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) 1 2 Schottky barrier rectifier with an integrated guard ring for 1 2 stress protection, encapsulated in a very small SOD323 (SC-76) and ultra small SOT666 SMD plastic package. sym001 MARKING TYPE NUMBER MARKING CODE The marking bar indicates the cathode. PMEG2010BEA V1 Fig.1 Simplified outline (SOD323; SC-76) and PMEG3010BEA V2 symbol. PMEG4010BEA V3 PMEG2010BEV G6 PMEG3010BEV G5 PMEG4010BEV G4 6 5 4 1,2 3, 4 5,6 sym038 1 2 3 Fig.2 Simplified outline (SOT666) and symbol. 2004 Jun 14 2

NXP Semiconductors Product data sheet 1 A very low V MEGA Schottky PMEGXX10BEA; F barrier rectifier PMEGXX10BEV ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PMEGXX10BEA − plastic surface mounted package; 2 leads SOD323 PMEGXX10BEV plastic surface mounted package; 6 leads SOT666 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V continuous reverse voltage R PMEG2010BEA/PMEG2010BEV − 20 V PMEG3010BEA/PMEG3010BEV − 30 V PMEG4010BEA/PMEG4010BEV − 40 V I continuous forward current T ≤ 55 °C; note 1 − 1 A F s I repetitive peak forward current t ≤ 1 ms; δ ≤ 0.5; note 2 − 3.5 A FRM p I non-repetitive peak forward current t = 8 ms; square wave; − 10 A FSM p note 2 T junction temperature note 3 − 150 °C j T operating ambient temperature note 3 −65 +150 °C amb T storage temperature −65 +150 °C stg Notes 1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions. 2. Only valid if pins 3 and 4 are connected in parallel (SOT666 package). 3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P are a significant part of the total power losses. Nomograms for determining the reverse power losses P and I R R F(AV) rating will be available on request. 2004 Jun 14 3

NXP Semiconductors Product data sheet 1 A very low V MEGA Schottky PMEGXX10BEA; F barrier rectifier PMEGXX10BEV THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT PMEGXX10BEA (SOD323) R thermal resistance from junction to in free air; notes 1 and 2 450 K/W th(j-a) ambient in free air; notes 2 and 3 210 K/W R thermal resistance from junction to note 4 90 K/W th(j-s) soldering point PMEGXX10BEV (SOT666) R thermal resistance from junction to in free air; notes 2 and 5 405 K/W th(j-a) ambient in free air; notes 2 and 6 215 K/W R thermal resistance from junction to note 4 80 K/W th(j-s) soldering point Notes 1. Refer to SOD323 (SC-76) standard mounting conditions. 2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P are a significant part of the total power losses. Nomograms for determining the reverse power losses P and I R R F(AV) rating will be available on request. 3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm. 4. Solder point of cathode tab. 5. Refer to SOT666 standard mounting conditions. 6. Only valid if pins 3 and 4 are connected in parallel (SOT666 package). CHARACTERISTICS T = 25 °C unless otherwise specified. amb PMEG2010BEA/ PMEG3010BEA/ PMEG4010BEA/ PMEG2010BEV PMEG3010BEV PMEG4010BEV SYMBOL PARAMETER CONDITIONS UNIT TYP. MAX. TYP. MAX. TYP. MAX. V forward voltage I = 0.1 mA 90 130 90 130 95 130 mV F F I = 1 mA 150 190 150 200 155 210 mV F I = 10 mA 210 240 215 250 220 270 mV F I = 100 mA 280 330 285 340 295 350 mV F I = 500 mA 355 390 380 430 420 470 mV F I = 1 000 mA 420 500 450 560 540 640 mV F I continuous V = 10 V; note 1 15 40 12 30 7 20 μA R R reverse current V = 20 V; note 1 40 200 − − − − μA R V = 30 V; note 1 − − 40 150 − − μA R V = 40 V; note 1 − − − − 30 100 μA R C diode capacitance V = 1 V; f = 1 MHz 66 80 55 70 43 50 pF d R Note 1. Pulse test: t ≤ 300 μs; δ ≤ 0.02. p 2004 Jun 14 4

NXP Semiconductors Product data sheet 1 A very low V MEGA Schottky PMEGXX10BEA; F barrier rectifier PMEGXX10BEV GRAPHICAL DATA 104 MHC673 105 MHC674 handbook, halfpage handbook, halfpage IF IR (mA) (μA) (1) 103 104 102 (1) (2) (3) 103 (2) 10 102 (3) 1 10 10−1 1 0 0.2 0.4 0.6 0 5 10 15 20 VF (V) VR (V) PMEG2010BEA/PMEG2010BEV PMEG2010BEA/PMEG2010BEV (1) Tamb = 150 °C. (1) Tamb = 150 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. Fig.3 Forward current as a function of forward Fig.4 Reverse current as a function of reverse voltage; typical values. voltage; typical values. 140 MHC675 104 MHC676 handbCoodk, halfpage handbooIkF, halfpage (pF) (mA) 120 103 100 102 (1) (2) (3) 80 60 10 40 1 20 0 10−1 0 5 10 15 20 0 0.2 0.4 0.6 VR (V) VF (V) PMEG3010BEA/PMEG3010BEV (1) Tamb = 150 °C. PMEG2010BEA/PMEG2010BEV (2) Tamb = 85 °C. Tamb = 25 °C; f = 1 MHz. (3) Tamb = 25 °C. Fig.5 Diode capacitance as a function of reverse Fig.6 Forward current as a function of forward voltage; typical values. voltage; typical values. 2004 Jun 14 5

NXP Semiconductors Product data sheet 1 A very low V MEGA Schottky PMEGXX10BEA; F barrier rectifier PMEGXX10BEV 105 MHC677 120 MHC678 IR handbCoodk, halfpage (μA) (1) (pF) 100 104 80 103 (2) 60 102 40 (3) 10 20 1 0 0 5 10 15 20 25 30 0 5 10 15 20 VR (V) VR (V) PMEG3010BEA/PMEG3010BEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. PMEG3010BEA/PMEG3010BEV (3) Tamb = 25 °C. Tamb = 25 °C; f = 1 MHz. Fig.7 Reverse current as a function of reverse Fig.8 Diode capacitance as a function of reverse voltage; typical values. voltage; typical values. 104 MHC679 105 MHC680 handbooIkF, halfpage handboIoRk, halfpage (mA) (μA) (1) 103 104 102 (1) (2) (3) 103 (2) 10 102 1 10 (3) 10−1 1 0 0.2 0.4 0.6 0 10 20 30 40 VF (V) VR (V) PMEG4010BEA/PMEG4010BEV PMEG4010BEA/PMEG4010BEV (1) Tamb = 150 °C. (1) Tamb = 150 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. Fig.9 Forward current as a function of forward Fig.10 Reverse current as a function of reverse voltage; typical values. voltage; typical values. 2004 Jun 14 6

NXP Semiconductors Product data sheet 1 A very low V MEGA Schottky PMEGXX10BEA; F barrier rectifier PMEGXX10BEV MHC681 100 handbook, halfpage Cd (pF) 80 60 40 20 0 0 5 10 15 20 VR (V) PMEG4010BEA/PMEG4010BEV Tamb = 25 °C; f = 1 MHz. Fig.11 Diode capacitance as a function of reverse voltage; typical values. 2004 Jun 14 7

NXP Semiconductors Product data sheet 1 A very low V MEGA Schottky PMEGXX10BEA; F barrier rectifier PMEGXX10BEV PACKAGE OUTLINES Plastic surface-mounted package; 2 leads SOD323 D A E X HD v M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x bp c D E HD Lp Q v 1.1 0.40 0.25 1.8 1.35 2.7 0.45 0.25 mm 0.05 0.2 0.8 0.25 0.10 1.6 1.15 2.3 0.15 0.15 Note 1. The marking bar indicates the cathode OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 03-12-17 SOD323 SC-76 06-03-16 2004 Jun 14 8

NXP Semiconductors Product data sheet 1 A very low V MEGA Schottky PMEGXX10BEA; F barrier rectifier PMEGXX10BEV Plastic surface-mounted package; 6 leads SOT666 D A E X S Y S HE 6 5 4 pin 1 index A 1 2 3 c e1 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y 0.6 0.27 0.18 1.7 1.3 1.7 0.3 mm 1.0 0.5 0.1 0.1 0.5 0.17 0.08 1.5 1.1 1.5 0.1 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-11-08 SOT666 06-03-16 2004 Jun 14 9

NXP Semiconductors Product data sheet 1 A very low V MEGA Schottky PMEGXX10BEA; F barrier rectifier PMEGXX10BEV DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Jun 14 10

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/04/pp11 Date of release: 2004 Jun 14 Document order number: 9397 750 13234