Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG3002AEB Low V MEGA Schottky barrier F diode Product data sheet 2002 May 06

NXP Semiconductors Product data sheet Low V MEGA Schottky barrier diode PMEG3002AEB F FEATURES PINNING • Forward current: 0.2 A PIN DESCRIPTION • Reverse voltage: 30 V 1 cathode • Very low forward voltage 2 anode • Ultra small SMD package. APPLICATIONS • Ultra high-speed switching • High efficiency DC/DC conversion , 4 columns 1 2 • Voltage clamping • Inverse-polarity protection • Low voltage rectification MGU328 • Low power consumption applications. Marking code: B1. DESCRIPTION The marking bar indicates the cathode. Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for Fig.1 Simplified outline (SOD523; SC-79) and stress protection, encapsulated in a SOD523 (SC-79) ultra symbol. small SMD plastic package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V continuous reverse voltage − 30 V R I continuous forward current − 200 mA F I repetitive peak forward current t ≤ 1 s; δ ≤ 0.5 − 300 mA FRM p I non-repetitive peak forward current t = 8.3 ms half sinewave; − 1 A FSM p JEDEC method T storage temperature −65 +150 °C stg T junction temperature − 125 °C j T operating ambient temperature −65 +125 °C amb 2002 May 06 2

NXP Semiconductors Product data sheet Low V MEGA Schottky barrier diode PMEG3002AEB F ELECTRICAL CHARACTERISTICS T = 25 °C; unless otherwise specified. amb SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V continuous forward voltage see Fig.2 F I = 0.1 mA 130 190 mV F I = 1 mA 190 250 mV F I = 10 mA 255 300 mV F I = 100 mA 355 400 mV F I = 200 mA 420 480 mV F I continuous reverse current V = 10 V; see Fig.3; note 1 2.5 10 μA R R C diode capacitance V = 1 V; f = 1 MHz; see Fig.4 20 25 pF d R Note 1. Pulsed test: t = 300 μs; δ = 0.02. p THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to note 1 450 K/W th j-a ambient Note 1. Refer to SOD523 (SC-79) standard mounting conditions. 2002 May 06 3

NXP Semiconductors Product data sheet Low V MEGA Schottky barrier diode PMEG3002AEB F GRAPHICAL DATA 104 MHC187 104 MHC188 handbook, halfpage handbook, halfpage IF IR (mA) (μA) (1) 103 103 (2) 102 102 (1) (2) (3) 10 10 (3) 1 1 0 0.2 0.4 0.6 0.8 1 0 10 20 30 VF (V) VR (V) (1) Tamb = 125 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. Fig.2 Forward current as a function of forward Fig.3 Reverse current as a function of reverse voltage; typical values. voltage; typical values. MHC189 40 handbook, halfpage Cd 35 (pF) 30 25 20 15 10 5 0 0 10 20 30 VR (V) f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2002 May 06 4

NXP Semiconductors Product data sheet Low V MEGA Schottky barrier diode PMEG3002AEB F PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD523 A c HE v M A D A 0 0.5 1 mm scale 1 2 DIMENSIONS (mm are the original dimensions) E bp UNIT A bp c D E HE v 0.65 0.34 0.17 1.25 0.85 1.65 mm 0.1 (1) 0.58 0.26 0.11 1.15 0.75 1.55 Note 1. The marking bar indicates the cathode. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 98-11-25 SOD523 SC-79 02-12-13 2002 May 06 5

NXP Semiconductors Product data sheet Low V MEGA Schottky barrier diode PMEG3002AEB F DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2002 May 06 6

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp7 Date of release: 2002 May 06 Document order number: 9397 750 09622