Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

PMEG2010EPK (cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8) 20 V, 1 A low VF MEGA Schottky barrier rectifier Rev. 2 — 14 March 2012 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 (DFN1608D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits  Average forward current: I ≤ 1 A  AEC-Q101 qualified F(AV)  Reverse voltage: V ≤ 20 V  Solderable side pads R  Low forward voltage V ≤ 415 mV  Package height typ. 0.37 mm F  Low reverse current  Ultra small and leadless SMD plastic package 1.3 Applications  Low voltage rectification  Low power consumption applications  High efficiency DC-to-DC conversion  Ultra high-speed switching  Switch mode power supply  Reverse polarity protection  LED backlight for mobile application 1.4 Quick reference data Table 1. Quick refere nce data Symbol Parameter Conditions Min Typ Max Unit I average forward square wave; δ=0.5; f=20kHz; [1] - - 1 A F(AV) current T ≤110°C amb square wave; δ=0.5; f=20kHz; - - 1 A T ≤135°C sp V reverse voltage T =25°C - - 20 V R j V forward voltage I =1A; pulsed; t ≤300µs; δ≤0.02; - 370 415 mV F F p T =25°C j I reverse current V =10V; T =25°C - 50 250 µA R R j t reverse recovery time I =0.5A; I =0.5A; I =0.1A; - 4 - ns rr R F R(meas) T =25°C j [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al O , standard footprint. 2 3

PMEG2010EPK NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 K cathode[1] 1 2 2 A anode 1 2 sym001 Transparent top view SOD1608 (DFN1608D-2) [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version PMEG2010EPK DFN1608D-2 Leadless ultra small plastic package; 2 terminals SOD1608 4. Marking Table 4. Marking cod es Type number Marking code PMEG2010EPK 0100 0000 VENDOR CODE CATHODE BAR READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac909 Fig 1. SOD1608 binary marking code description PMEG2010EPK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 March 2012 2 of 14

PMEG2010EPK NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 5. Limiting values Table 5. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T =25°C - 20 V R j I forward current T ≤130°C - 1.4 A F sp I average forward current square wave; δ=0.5; f=20kHz; [1] - 1 A F(AV) T ≤110°C amb square wave; δ=0.5; f=20kHz; - 1 A T ≤135°C sp I repetitive peak forward current t ≤1ms; δ≤0.25 - 3 A FRM p I non-repetitive peak forward square wave; t =8ms; T =25°C - 5 A FSM p j(init) current P total power dissipation T ≤25°C [2] - 410 mW tot amb [3] - 860 mW [1] - 1565 mW T junction temperature - 150 °C j T ambient temperature -55 150 °C amb T storage temperature -65 150 °C stg [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al O , standard footprint. 2 3 [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics Table 6. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance in free air [1][2] - - 305 K/W th(j-a) from junction to [1][3] - - 145 K/W ambient [1][4] - - 80 K/W R thermal resistance [5] - - 20 K/W th(j-sp) from junction to solder point [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P are a R significant part of the total power losses. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [4] Device mounted on a ceramic PCB, Al O , standard footprint. 2 3 [5] Soldering point of cathode tab. PMEG2010EPK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 March 2012 3 of 14

PMEG2010EPK NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 103 006aac952 Zth(j-a) duty cycle = (K/W) 1 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 10 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 006aac953 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0 0.01 10 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, mounting pad for cathode 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG2010EPK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 March 2012 4 of 14

PMEG2010EPK NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 102 006aac954 duty cycle = 1 Zth(j-a) 0.75 (K/W) 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0 0.01 10 10-3 10-2 10-1 1 10 102 103 tp (s) Ceramic PCB, Al O , standard footprint 2 3 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characterist ics Symbol Parameter Conditions Min Typ Max Unit V forward voltage I =100mA; pulsed; t ≤300µs; - 240 280 mV F F p δ≤0.02; T =25°C j I =500mA; pulsed; t ≤300µs; - 310 350 mV F p δ≤0.02; T =25°C j I =700mA; pulsed; t ≤300µs; - 330 390 mV F p δ≤0.02; T =25°C j I =1A; pulsed; t ≤300µs; δ≤0.02; - 370 415 mV F p T =25°C j I reverse current V =10V; T =25°C - 50 250 µA R R j V =20V; T =25°C - 150 600 µA R j C diode capacitance V =1V; f=1MHz; T =25°C - 65 - pF d R j V =10V; f=1MHz; T =25°C - 25 - pF R j t reverse recovery time I =0.5A; I =0.5A; I =0.1A; - 4 - ns rr F R R(meas) T =25°C j V peak forward recovery I =0.5A; dI /dt=20A/µs; T =25°C - 335 - mV FRM F F j voltage PMEG2010EPK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 March 2012 5 of 14

PMEG2010EPK NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 10 006aac955 10-1 006aac956 IF (IAR) (1) (A) 10-2 1 (1) (2) (2) 10-3 10-1 (3) (4) (5) 10-4 (3) 10-5 10-2 10-6 10-3 (4) 10-7 10-4 10-8 0.0 0.2 0.4 0.6 0.8 0 5 10 15 20 VF (V) VR (V) (1) T = 150 °C (1) T = 125 °C j j (2) T = 125 °C (2) T = 85 °C j j (3) T = 85 °C (3) T = 25 °C j j (4) T = 25 °C (4) T = −40 °C j j (5) T = −40 °C j Fig 5. Forward current as a function of forward Fig 6. Reverse current as a function of reverse voltage; typical values voltage; typical values 006aac957 006aac958 150 0.5 (4) PF(AV) Cd (W) (3) (pF) 0.4 (2) 100 (1) 0.3 0.2 50 0.1 0 0.0 0 5 10 15 20 0.0 0.5 1.0 1.5 VR (V) IF(AV) (A) f = 1 MHz; T = 25 °C T = 150 °C amb j (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1 Fig 7. Diode capacitance as a function of reverse Fig 8. Average forward power dissipation as a voltage; typical values function of average forward current; typical values PMEG2010EPK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 March 2012 6 of 14

PMEG2010EPK NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 006aac959 006aac960 1.4 1.5 PR(AV) (W) (1) 1.2 IF(AV) (A) 1.0 (2) 1.0 (1) 0.8 (2) (3) (3) 0.6 0.5 0.4 (4) (4) 0.2 0.0 0.0 0 5 10 15 20 0 25 50 75 100 125 150 175 VR (V) Tamb (°C) T = 125 °C FR4 PCB, standard footprint j (1) δ = 1 T = 150 °C j (2) δ = 0.9 (1) δ = 1 (DC) (3) δ = 0.8 (2) δ = 0.5; f = 20 kHz (4) δ = 0.5 (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig 9. Average reverse power dissipation as a Fig 10. Average forward current as a function of function of reverse voltage; typical values ambient temperature; typical values 006aac961 006aac962 1.5 1.5 (1) (1) IF(AV) IF(AV) (A) (A) (2) (2) 1.0 1.0 (3) (3) 0.5 0.5 (4) (4) 0.0 0.0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 Tamb (°C) Tamb (°C) FR4 PCB, mounting pad for cathode 1 cm2 Ceramic PCB, Al O , standard footprint 2 3 T = 150 °C T = 150 °C j j (1) δ = 1 (DC) (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig 11. Average forward current as a function of Fig 12. Average forward current as a function of ambient temperature; typical values ambient temperature; typical values PMEG2010EPK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 March 2012 7 of 14

PMEG2010EPK NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 006aac963 1.5 (1) IF(AV) (A) (2) 1.0 (3) 0.5 (4) 0.0 0 25 50 75 100 125 150 175 Tsp (°C) T = 150 °C j (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig 13. Average forward current as a function of solder point temperature; typical values 8. Test information IF IR(meas) time IR trr 006aad022 Fig 14. Reverse recovery definition PMEG2010EPK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 March 2012 8 of 14

PMEG2010EPK NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier IF time VF VFRM VF time 001aab912 Fig 15. Forward recovery definition P duty cycle δ = tp tcy tcy tp t 006aac658 Fig 16. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: I = I × δ with I defined as peak current, I = I at DC, and I = I × √δ with F(AV) M M RMS F(AV) RMS M I defined as RMS current. RMS 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMEG2010EPK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 March 2012 9 of 14

PMEG2010EPK NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 9. Package outline 0.85 0.40 0.75 0.34 1 0.80 0.72 1.65 1.55 0.40 0.32 2 0.75 0.04 0.67 Dimensions in mm 11-11-21 Fig 17. Package outline SOD1608 (DFN1608D-2) 10. Soldering Footprint information for reflow soldering of SOD1608 package SOD1608 1.15 0.75 1.05 0.65 0.95 0.55 0.9 0.8 0.7 0.7 0.8 0.9 1 2 0.1 0.2 1.8 1.9 2.0 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sod1608_fr Fig 18. Reflow soldering footprint for SOD1608 (DFN1608D-2) PMEG2010EPK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 March 2012 10 of 14

PMEG2010EPK NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 11. Revision history Table 8. Revision his tory Document ID Release date Data sheet status Change notice Supersedes PMEG2010EPKv.2 20120314 Product data sheet - PMEG2010EPKv.1 Modifications: • 5 “Limiting values”: I corrected F • 7 “Characteristics”: t and V added rr FRM • Fig 14. and 15: added PMEG2010EPKv.1 20120120 Product data sheet - - PMEG2010EPK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 March 2012 11 of 14

PMEG2010EPK NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 12.2 Definitions Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without Preview — The document is a preview version only. The document is still limitation specifications and product descriptions, at any time and without subject to formal approval, which may result in modifications or additions. notice. This document supersedes and replaces all information supplied prior NXP Semiconductors does not give any representations or warranties as to to the publication hereof. the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive Draft — The document is a draft version only. The content is still under applications. Unless otherwise agreed in writing, the product is not designed, internal review and subject to formal approval, which may result in authorized or warranted to be suitable for use in life support, life-critical or modifications or additions. NXP Semiconductors does not give any safety-critical systems or equipment, nor in applications where failure or representations or warranties as to the accuracy or completeness of malfunction of an NXP Semiconductors product can reasonably be expected information included herein and shall have no liability for the consequences of to result in personal injury, death or severe property or environmental use of such information. damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or Short data sheet — A short data sheet is an extract from a full data sheet applications and therefore such inclusion and/or use is at the customer's own with the same product type number(s) and title. A short data sheet is intended risk. for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data Quick reference data — The Quick reference data is an extract of the sheet, which is available on request via the local NXP Semiconductors sales product data given in the Limiting values and Characteristics sections of this office. In case of any inconsistency or conflict with the short data sheet, the document, and as such is not complete, exhaustive or legally binding. full data sheet shall prevail. Applications — Applications that are described herein for any of these Product specification — The information and data provided in a Product products are for illustrative purposes only. NXP Semiconductors makes no data sheet shall define the specification of the product as agreed between representation or warranty that such applications will be suitable for the NXP Semiconductors and its customer, unless NXP Semiconductors and specified use without further testing or modification. customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is Customers are responsible for the design and operation of their applications deemed to offer functions and qualities beyond those described in the and products using NXP Semiconductors products, and NXP Semiconductors Product data sheet. accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and 12.3 Disclaimers products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate Limited warranty and liability — Information in this document is believed to design and operating safeguards to minimize the risks associated with their be accurate and reliable. However, NXP Semiconductors does not give any applications and products. representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the NXP Semiconductors does not accept any liability related to any default, consequences of use of such information. NXP Semiconductors takes no damage, costs or problem which is based on any weakness or default in the responsibility for the content in this document if provided by an information customer’s applications or products, or the application or use by customer’s source outside of NXP Semiconductors. third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP In no event shall NXP Semiconductors be liable for any indirect, incidental, Semiconductors products in order to avoid a default of the applications and punitive, special or consequential damages (including - without limitation - lost the products or of the application or use by customer’s third party profits, lost savings, business interruption, costs related to the removal or customer(s). NXP does not accept any liability in this respect. replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of Limiting values — Stress above one or more limiting values (as defined in contract or any other legal theory. the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) Notwithstanding any damages that customer might incur for any reason operation of the device at these or any other conditions above those given in whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards the Recommended operating conditions section (if present) or the customer for the products described herein shall be limited in accordance with theTerms and conditions of commercial sale of NXP Semiconductors. PMEG2010EPK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 March 2012 12 of 14

PMEG2010EPK NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier Characteristics sections of this document is not warranted. Constant or Translations — A non-English (translated) version of a document is for repeated exposure to limiting values will permanently and irreversibly affect reference only. The English version shall prevail in case of any discrepancy the quality and reliability of the device. between the translated and English versions. Terms and conditions of commercial sale — NXP Semiconductors 12.4 Trademarks products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual Notice: All referenced brands, product names, service names and trademarks agreement is concluded only the terms and conditions of the respective are the property of their respective owners. agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G purchase of NXP Semiconductors products by customer. reenChip,HiPerSmart,HITAG,I²C-bus logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE No offer to sell or license — Nothing in this document may be interpreted or Ultralight,MoReUse,QLPAK,Silicon construed as an offer to sell products that is open for acceptance or the grant, Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia conveyance or implication of any license under any copyrights, patents or andUCODE — are trademarks of NXP B.V. other industrial or intellectual property rights. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Export control — This document as well as the item(s) described herein may Corporation. be subject to export control regulations. Export might require a prior authorization from competent authorities. 13. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com PMEG2010EPK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 14 March 2012 13 of 14

PMEG2010EPK NXP Semiconductors 20 V, 1 A low VF MEGA Schottky barrier rectifier 14. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 6 Thermal characteristics . . . . . . . . . . . . . . . . . . .3 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . .8 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . .9 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . .10 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 March 2012 Document identifier: PMEG2010EPK