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PMEG2005EB,115产品简介:
ICGOO电子元器件商城为您提供PMEG2005EB,115由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 PMEG2005EB,115价格参考¥1.47-¥5.30。NXP SemiconductorsPMEG2005EB,115封装/规格:二极管 - 整流器 - 单, 肖特基 表面贴装 二极管 20V 500mA(DC) SOD-523。您可以下载PMEG2005EB,115参考资料、Datasheet数据手册功能说明书,资料中有PMEG2005EB,115 详细功能的应用电路图电压和使用方法及教程。
PMEG2005EB,115 是 Nexperia USA Inc. 生产的一款高效能肖特基整流二极管,属于二极管 - 整流器 - 单类别。其主要应用场景如下: 1. 电源管理 - PMEG2005EB,115 适用于各种电源转换和管理电路中,例如开关电源(SMPS)、直流-直流转换器等。由于其低正向电压降(Vf)特性,能够有效减少功率损耗,提高整体效率。 - 常用于笔记本电脑适配器、手机充电器以及消费电子设备中的电源模块。 2. 太阳能光伏系统 - 在太阳能光伏系统中,该二极管可用作旁路二极管或阻塞二极管,防止电流反向流动,保护电池板免受损坏,并确保在部分遮挡情况下系统的正常运行。 3. 汽车电子 - 该型号的二极管符合车规级要求(具体需查阅数据手册确认),可应用于汽车电子领域,如车载充电器、LED 驱动电路、发动机控制单元(ECU)等。 - 它能承受较高的浪涌电流,适合需要高可靠性的汽车环境。 4. 电机驱动与控制 - 在小型电机驱动电路中,PMEG2005EB,115 可用于续流回路,防止感性负载引起的反电动势对电路造成损害。 - 适用于家用电器(如风扇、洗衣机)和工业自动化设备中的电机控制。 5. 信号整流与保护 - 该二极管可用于音频设备、传感器接口等场景中的信号整流,同时提供过压保护功能。 - 其快速恢复时间特性使其非常适合高频应用,例如通信设备中的信号处理电路。 6. 便携式设备 - 在便携式电子设备(如平板电脑、智能手表、蓝牙音箱等)中,该二极管可用于电池充电保护电路,确保充电过程的安全性和稳定性。 总结 PMEG2005EB,115 的核心优势在于其低正向电压降、高浪涌电流能力和快速恢复特性,这使得它广泛应用于高效能、高频和高可靠性要求的场景中。选择该型号时,需结合具体电路需求,参考其数据手册以确保最佳性能表现。
参数 | 数值 |
产品目录 | |
描述 | DIODE SCHOTTKY 20V 0.5A SOD523肖特基二极管与整流器 DIODE SCHTTKY TAPE-7 |
产品分类 | 单二极管/整流器分离式半导体 |
品牌 | NXP Semiconductors |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,肖特基二极管与整流器,NXP Semiconductors PMEG2005EB,115- |
数据手册 | |
产品型号 | PMEG2005EB,115 |
PCN封装 | |
不同If时的电压-正向(Vf) | 480mV @ 500mA |
不同 Vr、F时的电容 | 30pF @ 1V,1MHz |
不同 Vr时的电流-反向漏电流 | 30µA @ 10V |
二极管类型 | |
产品 | Schottky Diodes |
产品种类 | 肖特基二极管与整流器 |
供应商器件封装 | SOD-523 |
其它名称 | 568-6501-6 |
包装 | Digi-Reel® |
反向恢复时间(trr) | - |
商标 | NXP Semiconductors |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | SC-79,SOD-523 |
封装/箱体 | SOD-523 |
峰值反向电压 | 20 V |
工作温度-结 | 125°C (最大) |
工作温度范围 | + 125 C |
工厂包装数量 | 3000 |
技术 | Silicon |
最大反向漏泄电流 | 30 uA |
最大工作温度 | + 125 C |
最大浪涌电流 | 6 A |
最小工作温度 | - 65 C |
标准包装 | 1 |
正向电压下降 | 0.48 V |
正向连续电流 | 0.5 A |
热阻 | 400°C/W Ja |
电压-DC反向(Vr)(最大值) | 20V |
电流-平均整流(Io) | 500mA(DC) |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
配置 | Single |
零件号别名 | PMEG2005EB T/R |
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG2005EB Low V MEGA Schottky barrier F diode Product data sheet 2003 Apr 04 Supersedes data of 2003 Feb 20
NXP Semiconductors Product data sheet Low V MEGA Schottky barrier diode PMEG2005EB F FEATURES PINNING • Forward current: 0.5 A PIN DESCRIPTION • Reverse voltage: 20 V 1 cathode • Very low forward voltage 2 anode • Guard ring protected • Ultra small SMD package. APPLICATIONS • Ultra high-speed switching handbook, halfpage k a • Voltage clamping • Protection circuits • Low current rectification (cid:0)Top view MAM403 • Low power consumption applications (e.g. handheld devices). Marking code: L5. The marking bar indicates the cathode. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Fig.1 Simplified outline (SOD523; SC-79) and Schottky barrier diode, encapsulated in a SOD523 symbol. (SC-79) ultra small SMD plastic package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V continuous reverse voltage − 20 V R I continuous forward current − 500 mA F I repetitive peak forward current t = 1 ms; δ ≤ 0.25 − 3.5 A FRM p I non-repetitive peak forward current t = 8 ms square wave − 6 A FSM T storage temperature −65 +150 °C stg T junction temperature − 125 °C j T operating ambient temperature −65 +125 °C amb 2003 Apr 04 2
NXP Semiconductors Product data sheet Low V MEGA Schottky barrier diode PMEG2005EB F ELECTRICAL CHARACTERISTICS T = 25 °C; unless otherwise specified. amb SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V continuous forward voltage see Fig.2 F I = 0.1 mA 120 180 mV F I = 1 mA 180 240 mV F I = 10 mA 245 290 mV F I = 100 mA 320 380 mV F I = 500 mA 430 480 mV F I continuous reverse current V = 10 V; see Fig.3; note 1 7 30 μA R R C diode capacitance V = 1 V; f = 1 MHz; see Fig.4 24 30 pF d R Note 1. Pulsed test: t = 300 μs; δ = 0.02. p THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to note 1 400 K/W th j-a ambient Note 1. Refer to SOD523 (SC-79) standard mounting conditions. 2003 Apr 04 3
NXP Semiconductors Product data sheet Low V MEGA Schottky barrier diode PMEG2005EB F GRAPHICAL DATA 103 MHC456 104 MHC457 handbo(omIkFA, h)alfpage handbooIkR, halfpage (1) (μA) 102 103 (2) (1) (2) (3) 10 102 1 10 10−1 (3) 10−2 1 0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 VF (V) VR (V) (1) Tamb = 125 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. Fig.2 Forward current as a function of forward Fig.3 Reverse current as a function of reverse voltage; typical values. voltage; typical values. MHC458 50 handbook, halfpage Cd (pF) 40 30 20 10 0 0 5 10 15 20 VR (V) f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2003 Apr 04 4
NXP Semiconductors Product data sheet Low V MEGA Schottky barrier diode PMEG2005EB F PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD523 A c HE v M A D A 0 0.5 1 mm scale 1 2 DIMENSIONS (mm are the original dimensions) E bp UNIT A bp c D E HE v 0.65 0.34 0.17 1.25 0.85 1.65 mm 0.1 (1) 0.58 0.26 0.11 1.15 0.75 1.55 Note 1. The marking bar indicates the cathode. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 98-11-25 SOD523 SC-79 02-12-13 2003 Apr 04 5
NXP Semiconductors Product data sheet Low V MEGA Schottky barrier diode PMEG2005EB F DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and General ⎯ Information in this document is believed to be operation of the device at these or any other conditions accurate and reliable. However, NXP Semiconductors above those given in the Characteristics sections of this does not give any representations or warranties, document is not implied. Exposure to limiting values for expressed or implied, as to the accuracy or completeness extended periods may affect device reliability. of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and Right to make changes ⎯ NXP Semiconductors conditions of commercial sale, as published at reserves the right to make changes to information http://www.nxp.com/profile/terms, including those published in this document, including without limitation pertaining to warranty, intellectual property rights specifications and product descriptions, at any time and infringement and limitation of liability, unless explicitly without notice. This document supersedes and replaces all otherwise agreed to in writing by NXP Semiconductors. In information supplied prior to the publication hereof. case of any inconsistency or conflict between information Suitability for use ⎯ NXP Semiconductors products are in this document and such terms and conditions, the latter not designed, authorized or warranted to be suitable for will prevail. use in medical, military, aircraft, space or life support No offer to sell or license ⎯ Nothing in this document equipment, nor in applications where failure or malfunction may be interpreted or construed as an offer to sell products of an NXP Semiconductors product can reasonably be that is open for acceptance or the grant, conveyance or expected to result in personal injury, death or severe implication of any license under any copyrights, patents or property or environmental damage. NXP Semiconductors other industrial or intellectual property rights. accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or Export control ⎯ This document as well as the item(s) applications and therefore such inclusion and/or use is at described herein may be subject to export control the customer’s own risk. regulations. Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. Quick reference data ⎯ The Quick reference data is an NXP Semiconductors makes no representation or extract of the product data given in the Limiting values and warranty that such applications will be suitable for the Characteristics sections of this document, and as such is specified use without further testing or modification. not complete, exhaustive or legally binding. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings 2003 Apr 04 6
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp7 Date of release: 2003 Apr 04 Document order number: 9397 750 11354