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  • 型号: PMBFJ175,215
  • 制造商: NXP Semiconductors
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PMBFJ175,215产品简介:

ICGOO电子元器件商城为您提供PMBFJ175,215由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 PMBFJ175,215价格参考。NXP SemiconductorsPMBFJ175,215封装/规格:晶体管 - JFET, JFET P-Channel 30V 300mW Surface Mount SOT-23 (TO-236AB)。您可以下载PMBFJ175,215参考资料、Datasheet数据手册功能说明书,资料中有PMBFJ175,215 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

JFET P-CH 30V 300MW SOT23JFET JFET P-CH 30V 3mA

产品分类

JFET(结点场效应分离式半导体

FET类型

P 沟道

Id-ContinuousDrainCurrent

70 mA

Id-连续漏极电流

70 mA

品牌

NXP Semiconductors

产品手册

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产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,JFET,NXP Semiconductors PMBFJ175,215-

数据手册

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产品型号

PMBFJ175,215

PCN封装

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PCN设计/规格

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Vds-Drain-SourceBreakdownVoltage

30 V

Vds-漏源极击穿电压

30 V

Vgs-Gate-SourceBreakdownVoltage

30 V

Vgs-栅源极击穿电压

30 V

不同Id时的电压-截止(VGS关)

3V @ 10nA

不同Vds(Vgs=0)时的电流-漏极(Idss)

7mA @ 15V

不同Vds时的输入电容(Ciss)

8pF @ 10V(VGS)

产品种类

JFET

供应商器件封装

SOT-23 (TO-236AB)

其它名称

568-6483-2
933908910215
PMBFJ175 T/R
PMBFJ175 T/R-ND
PMBFJ175,215-ND
PMBFJ175215

功率-最大值

300mW

包装

带卷 (TR)

商标

NXP Semiconductors

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-236-3,SC-59,SOT-23-3

封装/箱体

SOT-23

工厂包装数量

3000

晶体管极性

N-Channel

标准包装

3,000

漏极电流(Id)-最大值

-

漏极连续电流

70 mA

漏源极电压(Vdss)

30V

漏源电压VDS

30 V

电压-击穿(V(BR)GSS)

30V

电阻-RDS(开)

125 欧姆

配置

Single

闸/源击穿电压

30 V

零件号别名

PMBFJ175 T/R

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PDF Datasheet 数据手册内容提取

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995

NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and handbook, halfpage 3 source connections. d g s PINNING 1 2 1 = drain 2 = source Top view MAM386 3 = gate Note 1. Drain and source are interchangeable. Fig.1 Simplified outline and symbol, SOT23. Marking codes: 174 : p6X 175 : p6W 176 : p6S 177 : p6Y QUICK REFERENCE DATA Drain-source voltage V max. 30 V DS Gate-source voltage V max. 30 V GSO Gate current I max. 50 mA G Total power dissipation up to T =25 C P max. 300 mW amb tot PMBFJ174 175 176 177 Drain current  20 7 2 1.5 mA VDS=15 V; VGS=0 IDSS  135 70 35 20 mA Drain-source ON-resistance V =0.1 V; V =0 R  85 125 250 300  DS GS DS on April 1995 2

NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage V max. 30 V DS Gate-source voltage V max. 30 V GSO Gate-drain voltage V max. 30 V GDO Gate current (d.c.) I max. 50 mA G Total power dissipation up to T =25 C(1) P max. 300 mW amb tot Storage temperature range T 65 to 150 C stg Junction temperature T max. 150 C j THERMAL RESISTANCE From junction to ambient in free air R = 430 K/W th j-a STATIC CHARACTERISTICS T =25 C unless otherwise specified j PMBFJ174 175 176 177 Gate cut-off current V =20 V; V =0 I  1 1 1 1 nA GS DS GSS Drain cut-off current V =15 V; V =10 V I  1 1 1 1 nA DS GS DSX Drain current  20 7 2 1.5 mA V =15 V; V =0 I DS GS DSS  135 70 35 20 mA Gate-source breakdown voltage I =1 A; V =0 V  30 30 30 30 V G DS (BR)GSS Gate-source cut-off voltage  5 3 1 0.8 V I =10 nA; V =15 V V D DS GS off  10 6 4 2.25 V Drain-source ON-resistance V =0.1 V; V =0 R  85 125 250 300  DS GS DS on Note 1. Mounted on a ceramic substrate of 8 mm 10 mm 0.7 mm. April 1995 3

NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DYNAMIC CHARACTERISTICS T =25 C unless otherwise specified j Input capacitance, f=1 MHz V =10 V; V =0 V C typ. 8 pF GS DS is V =V =0 C typ. 30 pF GS DS is Feedback capacitance, f=1 MHz V =10 V; V =0 V C typ. 4 pF GS DS rs Switching times (see Fig.2 3) PMBFJ174 175 176 177 Delay time t typ. 2 5 15 20 ns d Rise time t typ. 5 10 20 25 ns r Turn-on time t typ. 7 15 35 45 ns on Storage temperature t typ. 5 10 15 20 ns s Fall time t typ. 10 20 20 25 ns f Turn-off time t typ. 15 30 35 45 ns off Test conditions: V 10 6 6 6 V DD V 12 8 6 3 V GS off R 560 1200 2000 2900  L V 0 0 0 0 V GS on VGSoff handbook, halfpage −VDD 90% INPUT 50 Ω 10% Vout RL 10% 10% OUTPUT Vin D.U.T 90% 90% 50 Ω tf tr ts td MBK293 MBK292 Rise time input voltage 1 ns Fig.3 Input and output waveforms t t =t d r on Fig.2 Switching times test circuit t t =t s f off April 1995 4

NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D B E A X HE v M A 3 Q A A1 1 2 c e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x. bp c D E e e1 HE Lp Q v w 1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55 mm 0.1 1.9 0.95 0.2 0.1 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-11-04 SOT23 TO-236AB 06-03-16 April 1995 5

NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. DEFINITIONS Right to make changes  NXP Semiconductors reserves the right to make changes to information Product specification  The information and data published in this document, including without limitation provided in a Product data sheet shall define the specifications and product descriptions, at any time and specification of the product as agreed between NXP without notice. This document supersedes and replaces all Semiconductors and its customer, unless NXP information supplied prior to the publication hereof. Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an Suitability for use  NXP Semiconductors products are agreement be valid in which the NXP Semiconductors not designed, authorized or warranted to be suitable for product is deemed to offer functions and qualities beyond use in life support, life-critical or safety-critical systems or those described in the Product data sheet. equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe DISCLAIMERS property or environmental damage. NXP Semiconductors Limited warranty and liability  Information in this accepts no liability for inclusion and/or use of NXP document is believed to be accurate and reliable. Semiconductors products in such equipment or However, NXP Semiconductors does not give any applications and therefore such inclusion and/or use is at representations or warranties, expressed or implied, as to the customer’s own risk. the accuracy or completeness of such information and Applications  Applications that are described herein for shall have no liability for the consequences of use of such any of these products are for illustrative purposes only. information. NXP Semiconductors makes no representation or In no event shall NXP Semiconductors be liable for any warranty that such applications will be suitable for the indirect, incidental, punitive, special or consequential specified use without further testing or modification. damages (including - without limitation - lost profits, lost Customers are responsible for the design and operation of savings, business interruption, costs related to the their applications and products using NXP removal or replacement of any products or rework Semiconductors products, and NXP Semiconductors charges) whether or not such damages are based on tort accepts no liability for any assistance with applications or (including negligence), warranty, breach of contract or any customer product design. It is customer’s sole other legal theory. responsibility to determine whether the NXP Notwithstanding any damages that customer might incur Semiconductors product is suitable and fit for the for any reason whatsoever, NXP Semiconductors’ customer’s applications and products planned, as well as aggregate and cumulative liability towards customer for for the planned application and use of customer’s third the products described herein shall be limited in party customer(s). Customers should provide appropriate accordance with the Terms and conditions of commercial design and operating safeguards to minimize the risks sale of NXP Semiconductors. associated with their applications and products. April 1995 6

NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 NXP Semiconductors does not accept any liability related Export control  This document as well as the item(s) to any default, damage, costs or problem which is based described herein may be subject to export control on any weakness or default in the customer’s applications regulations. Export might require a prior authorization from or products, or the application or use by customer’s third national authorities. party customer(s). Customer is responsible for doing all Quick reference data  The Quick reference data is an necessary testing for the customer’s applications and extract of the product data given in the Limiting values and products using NXP Semiconductors products in order to Characteristics sections of this document, and as such is avoid a default of the applications and the products or of not complete, exhaustive or legally binding. the application or use by customer’s third party customer(s). NXP does not accept any liability in this Non-automotive qualified products  Unless this data respect. sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the Limiting values  Stress above one or more limiting product is not suitable for automotive use. It is neither values (as defined in the Absolute Maximum Ratings qualified nor tested in accordance with automotive testing System of IEC60134) will cause permanent damage to or application requirements. NXP Semiconductors accepts the device. Limiting values are stress ratings only and no liability for inclusion and/or use of non-automotive (proper) operation of the device at these or any other qualified products in automotive equipment or conditions above those given in the Recommended applications. operating conditions section (if present) or the Characteristics sections of this document is not warranted. In the event that customer uses the product for design-in Constant or repeated exposure to limiting values will and use in automotive applications to automotive permanently and irreversibly affect the quality and specifications and standards, customer (a) shall use the reliability of the device. product without NXP Semiconductors’ warranty of the product for such automotive applications, use and Terms and conditions of commercial sale  NXP specifications, and (b) whenever customer uses the Semiconductors products are sold subject to the general product for automotive applications beyond NXP terms and conditions of commercial sale, as published at Semiconductors’ specifications such use shall be solely at http://www.nxp.com/profile/terms, unless otherwise customer’s own risk, and (c) customer fully indemnifies agreed in a valid written individual agreement. In case an NXP Semiconductors for any liability, damages or failed individual agreement is concluded only the terms and product claims resulting from customer design and use of conditions of the respective agreement shall apply. NXP the product for automotive applications beyond NXP Semiconductors hereby expressly objects to applying the Semiconductors’ standard warranty and NXP customer’s general terms and conditions with regard to the Semiconductors’ product specifications. purchase of NXP Semiconductors products by customer. No offer to sell or license  Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. April 1995 7

NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/8 Date of release: April 1995