PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 11 September 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK • High energy efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • Power management • Loadswitch • Linear mode voltage regulator • Backlighting applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 100 V CEO voltage I collector current - - 3 A C I peak collector current single pulse; t ≤ 1 ms - - 8 A CM p R collector-emitter I = 1 A; I = 50 mA; pulsed; - 90 150 mΩ CEsat C B saturation resistance t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb I = 3 A; I = 300 mA; pulsed; - 75 110 mΩ C B t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb

Nexperia PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter mb C 2 E emitter B 3 E emitter E 4 B base 1 2 3 4 sym123 mb C collector LFPAK56; Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHPT61003NY LFPAK56; Plastic single-ended surface-mounted package SOT669 Power-SO8 (LFPAK56; Power-SO8); 4 leads 7. Marking Table 4. Marking codes Type number Marking code PHPT61003NY 1003NAB PHPT61003NY All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2015 2 / 17

Nexperia PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 100 V CBO V collector-emitter voltage open base - 100 V CEO V emitter-base voltage open collector - 7 V EBO I collector current - 3 A C I peak collector current single pulse; t ≤ 1 ms - 8 A CM p I base current - 0.5 A B Ptot total power dissipation Tamb ≤ 25 °C [1] - 1.25 W [2] - 3 W [3] - 5 W [4] - 25 W T junction temperature - 175 °C j T ambient temperature -55 175 °C amb T storage temperature -65 175 °C stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB) single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm2. [3] Device mounted on an ceramic PCB; Al2O3; standard footprint. [4] Power dissipation from junction to mounting base. aaa-010424 8 Ptot (W) 6 (1) 4 (2) 2 (3) 0 -75 25 125 225 Tamb (°C) (1) Ceramic PCB, Al O , standard footprint 2 3 2 (2) FR4 PCB, mounting pad for collector 6 cm (3) FR4 PCB, standard footprint Fig. 1. Power derating curves PHPT61003NY All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2015 3 / 17

Nexperia PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance in free air [1] - - 115 K/W from junction to [2] - - 50 K/W ambient [3] - - 30 K/W R thermal resistance - - 6 K/W th(j-sp) from junction to solder point [1] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard footprint. [2] Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm2. [3] Device mounted on an ceramic PCB; Al2O3; standard footprint. 103 aaa-010427 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 0.25 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PHPT61003NY All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2015 4 / 17

Nexperia PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 102 aaa-010428 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 10 0.2 0.1 0.05 0.02 0.25 1 0.01 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) 2 FR4 PCB, mounting pad for collector 6 cm Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PHPT61003NY All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2015 5 / 17

Nexperia PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit I collector-base cut-off V = 80 V; I = 0 A; T = 25 °C - - 100 nA CBO CB E amb current V = 80 V; I = 0 A; T = 150 °C - - 50 µA CB E j I collector-emitter cut-off V = 80 V; V = 0 V; T = 25 °C - - 100 nA CES CE BE amb current I emitter-base cut-off V = 7 V; I = 0 A; T = 25 °C - - 100 nA EBO EB C amb current h DC current gain V = 10 V; I = 500 mA; t ≤ 300 µs; 150 250 - FE CE C p δ ≤ 0.02 ; T = 25 °C; pulsed amb V = 10 V; I = 1 A; t ≤ 300 µs; 80 250 - CE C p δ ≤ 0.02 ; T = 25 °C; pulsed amb V = 10 V; I = 2 A; t ≤ 300 µs; 20 100 - CE C p δ ≤ 0.02 ; T = 25 °C; pused amb V = 10 V; I = 3 A; t ≤ 300 µs; 10 40 - CE C p δ ≤ 0.02 ; T = 25 °C; pulsed amb V collector-emitter I = 1 A; I = 50 mA; pulsed; - 90 150 mV CEsat C B saturation voltage t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb I = 3 A; I = 300 mA; pulsed; - 225 330 mV C B t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb R collector-emitter I = 1 A; I = 50 mA; pulsed; - 90 150 mΩ CEsat C B saturation resistance t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb I = 3 A; I = 300 mA; pulsed; - 75 110 mΩ C B t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb V base-emitter saturation I = 1 A; I = 50 mA; pulsed; - 0.86 1 V BEsat C B voltage t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb I = 2 A; I = 200 mA; pulsed; - 1 1.2 V C B t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb V base-emitter turn-on V = 2 V; I = 0.1 A; T = 25 °C - 0.67 0.85 V BEon CE C amb voltage t delay time V = 12.5 V; I = 1 A; I = 0.05 A; - 20 - ns d CC C Bon I = -0.05 A; T = 25 °C t rise time Boff amb - 300 - ns r t turn-on time - 320 - ns on t storage time - 830 - ns s t fall time - 470 - ns f t turn-off time - 1300 - ns off PHPT61003NY All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2015 6 / 17

Nexperia PHPT61003NY 100 V, 3 A NPN high power bipolar transistor Symbol Parameter Conditions Min Typ Max Unit f transition frequency V = 10 V; I = 100 mA; f = 100 MHz; - 140 - MHz T CE C T = 25 °C amb C collector capacitance V = 10 V; I = 0 A; i = 0 A; - 11 - pF c CB E e f = 1 MHz; T = 25 °C amb aaa-010261 aaa-010267 400 3 IB=50mA hFE (1) IC 45 (A) 40 300 35 2 30 (2) 25 20 200 15 10 (3) 1 5 100 0 0 10-1 1 10 102 103 104 0 1 2 3 4 5 IC (mA) VCE (V) V = 10 V T = 25 °C CE amb (1) T = 100 °C amb Fig. 5. Collector current as a function of collector- (2) T = 25 °C amb emitter voltage; typical values (3) T = −55 °C amb Fig. 4. DC current gain as a function of collector current; typical values PHPT61003NY All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2015 7 / 17

Nexperia PHPT61003NY 100 V, 3 A NPN high power bipolar transistor aaa-010262 aaa-010265 1.2 1.4 VBE VBEsat (V) (V) 0.8 (1) 1.0 (2) (1) (3) 0.4 0.6 (2) (3) 0 0.2 10-1 1 10 102 103 104 105 10-1 1 10 102 103 104 105 IC (mA) IC (mA) V = 2 V I /I = 20 CE C B (1) T = −55 °C (1) T = −55 °C amb amb (2) T = 25 °C (2) T = 25 °C amb amb (3) T = 100 °C (3) T = 100 °C amb amb Fig. 6. Base-emitter voltage as a function of collector Fig. 7. Base-emitter saturation voltage as a function of current; typical values collector current; typical values aaa-010263 aaa-010264 1 10 VCEsat VCEsat (V) (V) 1 10-1 (2) (1) (1) (2) (3) 10-1 (3) 10-2 10-2 10-3 10-3 10-1 1 10 102 103 104 10-1 1 10 102 103 104 IC (mA) IC (mA) I /I = 20 T = 25 °C C B amb (1) T = 100 °C (1) I /I = 50 amb C B (2) T = 25 °C (2) I /I = 20 amb C B (3) T = −55 °C (3) I /I = 10 amb C B Fig. 8. Collector-emitter saturation voltage as a Fig. 9. Collector-emitter saturation voltage as a function of collector current; typical values function of collector current; typical values PHPT61003NY All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2015 8 / 17

Nexperia PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 103 aaa-010266 103 aaa-010268 RCEsat RCEsat (Ω) (Ω) 102 102 10 10 (1) 1 1 (2) (1) (3) (2) 10-1 10-1 (3) 10-2 10-2 10-1 1 10 102 103 104 10-1 1 10 102 103 104 IC (mA) IC (mA) I /I = 20 T = 25 °C C B amb (1) T = 100 °C (1) I /I = 50 amb C B (2) T = 25 °C (2) I /I = 20 amb C B (3) T = −55 °C (3) I /I = 10 amb C B Fig. 10. Collector-emitter saturation resistance as a Fig. 11. Collector-emitter saturation resistance as a function of collector current; typical values function of collector current; typical values PHPT61003NY All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2015 9 / 17

Nexperia PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 11. Test information IB 90% inputpulse (idealizedwaveform) IBon(100%) 10% IBoff outputpulse IC (idealizedwaveform) 90% IC(100%) 10% t td tr ts tf ton toff 006aaa003 Fig. 12. BISS transistor switching time definition VBB VCC RB RC (probe) Vo (probe) oscilloscope oscilloscope 450Ω 450Ω R2 VI DUT R1 mlb826 Fig. 13. Test circuit for switching times 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PHPT61003NY All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2015 10 / 17

Nexperia PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 12. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669 E A A2 C b2 c2 E1 L1 b3 mounting base b4 D1 H D L2 1 2 3 4 X e b w A c 1/2 e A (A3) A1 C q L detail X y C 0 5 mm θ scale 8° 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 b3 b4 c c2 D(1) D1(1) E(1) E1(1) e H L L1 L2 w y max 1.20 0.15 1.10 0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 6.2 0.85 1.3 1.3 mm nom 0.25 1.27 0.25 0.1 min 1.01 0.00 0.95 0.35 3.62 2.0 0.7 0.19 0.24 3.80 4.8 3.1 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. sot669_po Outline References European Issue date version IEC JEDEC JEITA projection 11-03-25 SOT669 MO-235 13-02-27 Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669) PHPT61003NY All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2015 11 / 17

Nexperia PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13. Soldering Footprintinformationforreflowsoldering SOT669 4.7 4.2 0.9 0.6 (3×) (4×) 0.25 0.25 (2×) (2×) 3.45 3.5 0.6 2.55 (3×) 2 0.25 (2×) SRopening= 1.1 Cu+0.075 2.15 3.3 SPopening= Cu- 0.050 0.7 1.27 (4×) 3.81 solderpaste solderlands 125µmstencil solderresist occupiedarea Dimensionsinmm sot669_fr Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669) PHPT61003NY All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2015 12 / 17

Nexperia PHPT61003NY 100 V, 3 A NPN high power bipolar transistor WavesolderingfootprintinformationforLFPAK56 package SOT669 4.826 1.78 1.72 2.1 1.4 0.6 (x4) 1.27 0.635 solder lands Dimensions in mm 15-04-13 Issue date 15-04-16 sot669_fw Fig. 16. Wave soldering footprint for LFPAK56; Power-SO8 (SOT669) PHPT61003NY All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2015 13 / 17

Nexperia PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PHPT61003NY v.4 20150911 Product data sheet - PHPT61003NY v.3 Modifications: • Editorial update of section 11. Test information • Update of Figure 4 PHPT61003NY v.3 20140203 Product data sheet - PHPT61003NY v.2 PHPT61003NY v.2 20131213 Product data sheet - PHPT61003NY v.1 PHPT61003NY v.1 20140113 Product data sheet - PHPT61003NY All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2015 14 / 17

Nexperia PHPT61003NY 100 V, 3 A NPN high power bipolar transistor In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - 15. 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However, Nexperia does not give sale, as published at http://www.nexperia.com/profile/terms, unless otherwise any representations or warranties, expressed or implied, as to the accuracy agreed in a valid written individual agreement. In case an individual or completeness of such information and shall have no liability for the agreement is concluded only the terms and conditions of the respective consequences of use of such information. Nexperia takes no agreement shall apply. Nexperia hereby expressly objects to responsibility for the content in this document if provided by an information applying the customer’s general terms and conditions with regard to the source outside of Nexperia. purchase of Nexperia products by customer. PHPT61003NY All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2015 15 / 17

Nexperia PHPT61003NY 100 V, 3 A NPN high power bipolar transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PHPT61003NY All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2015 16 / 17

Nexperia PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 16. Contents 1 General description ...............................................1 2 Features and benefits ............................................1 3 Applications ...........................................................1 4 Quick reference data .............................................1 5 Pinning information ...............................................2 6 Ordering information .............................................2 7 Marking ...................................................................2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics .......................................................6 11 Test information ...................................................10 11.1 Quality information .............................................10 12 Package outline ...................................................11 13 Soldering ..............................................................12 14 Revision history ...................................................14 15 Legal information .................................................15 15.1 Data sheet status ...............................................15 15.2 Definitions ...........................................................15 15.3 Disclaimers .........................................................15 15.4 Trademarks ........................................................16 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 11 September 2015 PHPT61003NY All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2015 17 / 17