PHP20N06T N-channel TrenchMOS standard level FET Rev. 02 — 27 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits (cid:132) Low conduction losses due to low (cid:132) Suitable for high frequency on-state resistance applications due to fast switching characteristics 1.3 Applications (cid:132) DC-to-DC convertors (cid:132) Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥25°C; T ≤175°C - - 55 V DS j j I drain current T =25°C; V =10V; - - 20.3 A D mb GS see Figure 3 and 1 P total power T =25°C;see Figure 2 - - 62 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V; I =25A; - 6 - nC GD GS D V =44V; T =25°C; DS j see Figure 13 Static characteristics R drain-source V =10V; I =10A; - - 150 mΩ DSon GS D on-state resistance T =175°C; j see Figure 11 and 12 V =10V; I =10A; - 64 75 mΩ GS D T =25°C; j see Figure 11 and 12

PHP20N06T Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3 S source G mb D mounting base; connected to drain mbb076 S 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version PHP20N06T TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78 TO-220AB 4. Limiting values Table 4. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥25°C; T ≤175°C - 55 V DS j j V drain-gate voltage R =20kΩ - 55 V DGR GS V gate-source voltage -20 20 V GS I drain current V =10V; T =100°C; see Figure 1 - 14.3 A D GS mb V =10V; T =25°C; see Figure 3 and 1 - 20.3 A GS mb I peak drain current t ≤10µs; pulsed; T =25°C; see Figure 3 - 81 A DM p mb P total power dissipation T =25°C; see Figure 2 - 62 W tot mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j Source-drain diode I source current T =25°C - 20.3 A S mb I peak source current t ≤10µs; pulsed; T =25°C - 81 A SM p mb Avalanche ruggedness E non-repetitive V =10V; T =25°C; I =11A; V ≤55V; - 30.3 mJ DS(AL)S GS j(init) D sup drain-source avalanche R =50Ω; unclamped GS energy PHP20N06T_2 Product data sheet Rev. 02 — 27 November 2009 2 of 12 © Nexperia B.V. 2017. All rights reserved

PHP20N06T Nexperia N-channel TrenchMOS standard level FET 03aa24 03aa16 120 120 Ider Pder (%) (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 150 200 Tmb (°C) Tmb (°C) Fig 1. Normalized continuous drain current as a Fig 2. Normalized total power dissipation as a function of mounting base temperature function of mounting base temperature 103 003aaa043 ID (A) 102 RDSon = VDS/ ID tp = 10 μs 10 100 μs P δ =tp D.C. 1 ms T 10 ms 1 tp t T 10−1 1 10 VDS (V) 102 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PHP20N06T_2 Product data sheet Rev. 02 — 27 November 2009 3 of 12 © Nexperia B.V. 2017. All rights reserved

PHP20N06T Nexperia N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from see Figure 4 - - 2.4 K/W th(j-mb) junction to mounting base R thermal resistance from vertical in still air - 60 - K/W th(j-a) junction to ambient 003aaa044 10 Zth(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10−1 0.02 P δ = Ttp single pulse tp t T 10−2 10−6 10−5 10−4 10−3 10−2 10−1 1 tp (s) Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PHP20N06T_2 Product data sheet Rev. 02 — 27 November 2009 4 of 12 © Nexperia B.V. 2017. All rights reserved

PHP20N06T Nexperia N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characterist ics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I =0.25mA; V =0V; T =-55°C 50 - - V (BR)DSS D GS j breakdown voltage I =0.25mA; V =0V; T =25°C 55 - - V D GS j V gate-source threshold I =1mA; V = V ; T =175°C; 1 - - V GS(th) D DS GS j voltage see Figure 10 I =1mA; V = V ; T =-55°C; - - 4.4 V D DS GS j see Figure 10 I =1mA; V = V ; T =25°C; 2 3 4 V D DS GS j see Figure 10 I drain leakage current V =55V; V =0V; T =25°C - 0.05 10 µA DSS DS GS j V =55V; V =0V; T =175°C - - 500 µA DS GS j I gate leakage current V =20V; V =0V; T =25°C - 2 100 nA GSS GS DS j V =-20V; V =0V; T =25°C - 2 100 nA GS DS j R drain-source on-state V =10V; I =10A; T =175°C; - - 150 mΩ DSon GS D j resistance see Figure 11 and 12 V =10V; I =10A; T =25°C; - 64 75 mΩ GS D j see Figure 11 and 12 Dynamic characteristics Q total gate charge I =25A; V =44V; V =10V; - 11 - nC G(tot) D DS GS T =25°C;see Figure 13 Q gate-source charge j - 3 - nC GS Q gate-drain charge - 6 - nC GD C input capacitance V =25V; V =0V; f=1MHz; - 320 483 pF iss DS GS T =25°C;see Figure 14 C output capacitance j - 92 113 pF oss C reverse transfer - 64 90 pF rss capacitance t turn-on delay time V =30V; R =1.2Ω; V =10V; - 10 - ns d(on) DS L GS R =10Ω; T =25°C t rise time G(ext) j - 50 - ns r t turn-off delay time - 70 - ns d(off) t fall time - 40 - ns f L internal drain from drain lead 6 mm from package to - 4.5 - nH D inductance centre of die; T =25°C j from contact screw on mounting base to - 3.5 - nH centre of die; T =25°C j L internal source from source lead to source bond pad; - 7.5 - nH S inductance T =25°C j Source-drain diode V source-drain voltage I =25A; V =0V; T =25°C; - 0.85 1.2 V SD S GS j see Figure 15 t reverse recovery time I =20A; dI /dt=-100A/µs; V =-10V; - 32 - ns rr S S GS V =30V; T =25°C Q recovered charge DS j - 120 - nC r PHP20N06T_2 Product data sheet Rev. 02 — 27 November 2009 5 of 12 © Nexperia B.V. 2017. All rights reserved

PHP20N06T Nexperia N-channel TrenchMOS standard level FET 003aaa045 003aaa051 60 160 RDSon ID VGS (V) = (mΩ) (A) 50 16 140 12 40 10 120 9.0 30 100 8.0 7.5 20 7.0 80 6.5 6.0 10 60 5.0 0 40 0 2 4 6 8 10 5 10 15 20 VDS (V) VGS (V) Fig 5. Output characteristics: drain current as a Fig 6. Drain-source on-state resistance as a function function of drain-source voltage; typical values of gate-source voltage; typical values 10−1 03aa35 8 003aaa047 (IAD) gfs 10−2 min typ max (S) 6 10−3 4 10−4 2 10−5 10−6 0 0 2 4 6 0 5 10 15 20 25 VGS (V) ID (A) Fig 7. Sub-threshold drain current as a function of Fig 8. Forward transconductance as a function of gate-source voltage drain current; typical values PHP20N06T_2 Product data sheet Rev. 02 — 27 November 2009 6 of 12 © Nexperia B.V. 2017. All rights reserved

PHP20N06T Nexperia N-channel TrenchMOS standard level FET 003aaa049 03aa32 25 5 ID VG(VS()th) (A) 20 4 max 15 3 typ 10 2 min 5 Tj = 175 °C 1 Tj = 25 °C 0 0 0 2 4 6 8 10 −60 0 60 120 180 VGS (V) Tj (°C) Fig 9. Transfer characteristics: drain current as a Fig 10. Gate-source threshold voltage as a function of function of gate-source voltage; typical values junction temperature 003aaa046 03aa28 180 2.4 RDSon VGS (V) = (mΩ) 5.5 6 6.5 7 8 10 a 160 1.8 140 120 1.2 100 80 0.6 60 40 0 0 10 20 30 40 50 −60 0 60 120 180 ID (A) Tj (°C) Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance of drain current; typical values factor as a function of junction temperature PHP20N06T_2 Product data sheet Rev. 02 — 27 November 2009 7 of 12 © Nexperia B.V. 2017. All rights reserved

PHP20N06T Nexperia N-channel TrenchMOS standard level FET 003aaa050 003aaa048 10 600 Ciss, VGS Coss, (V) VDD = 44 V Crss 500 8 (pF) VDD = 14 V 400 6 Ciss 300 4 200 Coss 2 100 Crss 0 0 0 5 10 15 10−3 10−2 1 10 102 QG (nC) VDS (V) Fig 14. Input, output and reverse transfer capacitances Fig 13. Gate-source voltage as a function of gate as a function of drain-source voltage; typical charge; typical values values 003aaa052 120 IS (A) 100 80 60 Tj = 175 °C 40 Tj = 25 °C 20 0 0 0.5 1.0 1.5 2.0 VSD (V) Fig 15. Source current as a function of source-drain voltage; typical values PHP20N06T_2 Product data sheet Rev. 02 — 27 November 2009 8 of 12 © Nexperia B.V. 2017. All rights reserved

PHP20N06T Nexperia N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A p A1 q mounting D1 base D L1(1) L2(1) Q b1(2) L (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) mL2a(1x). p q Q 4.7 1.40 0.9 1.6 1.3 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6 mm 2.54 3.0 4.1 1.25 0.6 1.0 1.0 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 08-04-23 SOT78 3-lead TO-220AB SC-46 08-06-13 Fig 16. Package outline SOT78 (TO-220AB) PHP20N06T_2 Product data sheet Rev. 02 — 27 November 2009 9 of 12 © Nexperia B.V. 2017. All rights reserved

PHP20N06T Nexperia N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision his tory Document ID Release date Data sheet status Change notice Supersedes PHP20N06T_2 20091127 Product data sheet - PHP20N06T_PHB20N06T-01 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PHP20N06T separated from data sheet PHP20N06T_PHB20N06T-01. PHP20N06T_PHB20N06T-01 20010222 Product specification - - PHP20N06T_2 Product data sheet Rev. 02 — 27 November 2009 10 of 12 © Nexperia B.V. 2017. All rights reserved

PHP20N06T Nexperia N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Applications— Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no Draft— The document is a draft version only. The content is still under representation or warranty that such applications will be suitable for the internal review and subject to formal approval, which may result in specified use without further testing or modification. modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of Quick reference data— The Quick reference data is an extract of the information included herein and shall have no liability for the consequences of product data given in the Limiting values and Characteristics sections of this use of such information. document, and as such is not complete, exhaustive or legally binding. Short data sheet— A short data sheet is an extract from a full data sheet with Limiting values— Stress above one or more limiting values (as defined in the same product type number(s) and title. A short data sheet is intended for the Absolute Maximum Ratings System of IEC 60134) may cause permanent quick reference only and should not be relied upon to contain detailed and full damage to the device. Limiting values are stress ratings only and operation of information. For detailed and full information see the relevant full data sheet, the device at these or any other conditions above those given in the which is available on request via the local Nexperia sales office. Characteristics sections of this document is not implied. Exposure to limiting In case of any inconsistency or conflict with the short data sheet, the full data values for extended periods may affect device reliability. sheet shall prevail. Terms and conditions of sale— Nexperia products are sold subject to the general terms and conditions of commercial sale, as published 9.3 Disclaimers at http://www.nexperia.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless General— Information in this document is believed to be accurate and explicitly otherwise agreed to in writing by Nexperia. In case of reliable. However, Nexperia does not give any representations or any inconsistency or conflict between information in this document and such warranties, expressed or implied, as to the accuracy or completeness of such terms and conditions, the latter will prevail. information and shall have no liability for the consequences of use of such information. No offer to sell or license— Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, Right to make changes— Nexperia reserves the right to make conveyance or implication of any license under any copyrights, patents or changes to information published in this document, including without other industrial or intellectual property rights. limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior Export control— This document as well as the item(s) described herein may to the publication hereof. be subject to export control regulations. Export might require a prior authorization from national authorities. Suitability for use— Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 9.4 Trademarks malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental Notice: All referenced brands, product names, service names and trademarks damage. Nexperia accepts no liability for inclusion and/or use of are the property of their respective owners. Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 10. Contact information For more information, please visit:http://www.nexperia.com For sales office addresses, please send an email to:salesaddresses@nexperia.com PHP20N06T_2 Product data sheet Rev. 02 — 27 November 2009 11 of 12 © Nexperia B.V. 2017. All rights reserved

PHP20N06T Nexperia N-channel TrenchMOS standard level FET 11. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .11 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11 9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11 9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11 10 Contact information. . . . . . . . . . . . . . . . . . . . . .11 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 27 November 2009