PHE13005 Silicon diffused power transistor Rev.01 - 30 March 2018 Product data sheet 1. General description High voltage, high speed NPN planar-passivated power switching transistor in a SOT78 plastic package intended for use in high frequency electronic lighting ballast applications 2. Features and benefits • Fast switching • High voltage capability of 700 V • Low thermal resistance 3. Applications • Electronic lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V peak collector-emitter V = 0 V 700 V CESM BE voltage IC collector current (DC) DC; Fig. 1; Fig. 2; Fig. 4 4 A P total power dissipation T ≤ 25 °C; Fig. 3 75 W tot mb Symbol Parameter Conditions Min Typ Max Unit Static characteristics h DC current gain I = 1 A; V = 5 V; T = 25 °C; 12 20 40 FE C CE mb Fig. 11 I = 2 A; V = 5 V; T = 25 °C; 10 17 28 C CE mb Fig. 11

WeEn Semiconductors PHE13005 Silicon diffused power transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base mb 2 C collector 3 E emitter mb C mounting base; connected to collector 1 2 3 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHE13005 TO-220AB plastic single-ended package; heatsink mounted; SOT78 1 mounting hole; 3-lead TO-220AB PHE13005 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 March 2018 2 / 13

WeEn Semiconductors PHE13005 Silicon diffused power transistor 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Values Unit V peak collector-emitter V = 0 V 700 V CESM BE voltage V collector-base voltage I = 0 A 700 V CBO E VCEO collector-emitter voltage IB = 0 A 400 V I collector current DC; Fig. 1; Fig. 2; Fig. 4 4 A C I peak collector current 8 A CM I base current DC 2 A B I peak base current 4 A BM P total power dissipation T ≤ 25 °C; Fig. 3 75 W tot mb T storage temperature -65 to 150 °C stg T junction temperature 150 °C j V emitter-base voltage I = 0 A 9 V EBO C V ≤ 1000V; V = 150 V; V = -5 V; CL(CE) CC BB L = 200 μH; L = 1 μH T≤ T °C C B j j (max) Fig. 1. Test circuit for reverse bias safe operating area Fig. 2. Reverse bias safe operating area PHE13005 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 March 2018 3 / 13

WeEn Semiconductors PHE13005 Silicon diffused power transistor Ptot Pder(%) = ×100% Ptot(25°C) Fig. 3. Normalized total power dissipation as a function of heatsink temperature T ≤ 25 °C h Mounted with heatsink compound and (30 ± 5) N force on the centre of the envelope (1) P maximum and P peak maximum lines tot tot (2) Second breakdown limits (3) Region of permissible DC operation (4) Extension of operating region for repetitive pulse operation (5) Extension of operating region during turn-on in single transistor converters provided that R ≤ 100 Ω and BE t ≤ 0.6 μs p Fig. 4. Forward bias safe operating area PHE13005 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 March 2018 4 / 13

WeEn Semiconductors PHE13005 Silicon diffused power transistor 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance Fig. 5 - - 1.67 K/W th(j-mb) from junction to mounting base R thermal resistance in free air - 60 - K/W th(j-a) from junction to ambient Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration PHE13005 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 March 2018 5 / 13

WeEn Semiconductors PHE13005 Silicon diffused power transistor 9. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics I collector-emitter cut-off V = -1.5 V; V = 700 V; T = 25 °C - - 1 mA CES BE CE mb current V = -1.5 V; V = 700 V; T = 125 °C - - 5 mA BE CE j I collector-base cut-off V = 700 V; I = 0 A; T = 25 °C - - 1 mA CBO CB E mb current I collector-emitter cut-off V = 400 V; I = 0 A; T = 25 °C - - 0.1 mA CEO CEO B mb current I emitter-base cut-off V = 9 V; I = 0 A; T = 25 °C - - 1 mA EBO EB C mb current V collector-emitter I = 0 A; I = 10 mA; L = 25 mH; 400 - - V CEOsus B C C sustaining voltage T = 25 °C; Fig. 6; Fig. 7 mb V collector-emitter I = 1.0 A; I = 0.2 A; T = 25 °C; - 0.1 0.5 V CEsat C B mb saturation voltage Fig. 8; Fig. 9 I = 2.0 A; I = 0.5 A; T = 25 °C; - 0.2 0.6 V C B mb Fig. 8; Fig. 9 I = 4.0 A; I = 1.0 A; T = 25 °C; - 0.3 1 V C B mb Fig. 8; Fig. 9 VBEsat base-emitter saturation IC = 1.0 A; IB = 0.2 A; Tmb = 25 °C; - 0.85 1.2 V Fig. 10 voltage I = 2.0 A; I = 0.5 A; T = 25 °C; - 0.92 1.6 V C B mb Fig. 10 h DC current gain I = 1 A; V = 5 V; T = 25 °C; 12 20 40 FE C CE mb Fig. 11 I = 2 A; V = 5 V; T = 25 °C; 10 17 28 C CE mb Fig. 11 Dynamic characteristics ts storage time IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A; - 2.7 4 μs R = 75 Ω; T = 25 °C; resistive load; L mb Fig. 12; Fig. 13 I = 2 A; I = 0.4 A; V = -5 V; - 1.2 2 μs C Bon BB L = 1 μH; T = 25 °C; inductive load; B mb Fig. 14; Fig. 15 I = 2 A; I = 0.4 A; V = -5 V; - 1.4 4 μs C Bon BB L = 1 μH; T = 100 °C; inductive load; B mb Fig. 14; Fig. 15 tf fall time IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A; - 0.3 0.9 μs R = 75 Ω; T = 25 °C; resistive load; L mb Fig. 12; Fig. 13 I = 2 A; I = 0.4 A; V = -5 V; - 0.1 0.5 μs C Bon BB L = 1 μH; T = 25 °C; inductive load; B mb Fig. 14; Fig. 15 I = 2 A; I = 0.4 A; V = -5 V; - 0.16 0.9 μs C Bon BB L = 1 μH; T = 100 °C; inductive load; B mb Fig. 14; Fig. 15 PHE13005 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 March 2018 6 / 13

WeEn Semiconductors PHE13005 Silicon diffused power transistor Fig. 6. Test circuit for collector-emitter sustaining Fig. 7. Oscilloscope display for collector-emitter voltage sustaining voltage test waveform T = 25 °C I / I = 4 j C B Fig. 8. Collector-emitter saturation voltage; typical Fig. 9. Collector-emitter saturation voltage as a values function of collector current; typical values PHE13005 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 March 2018 7 / 13

WeEn Semiconductors PHE13005 Silicon diffused power transistor I / I = 4 T = 25 °C C B j Fig. 11. DC current gain as a function of collector Fig. 10. Base-emitter saturation voltage; typical values current; typical values V = - 6 to + 8 V; V = 250 V; t = 20 μs; IM CC p δ = t / T = 0.01 p R and R calculated from I and I requirements. B L Con Bon Fig. 12. Test circuit for resistive load switching Fig. 13. Switching times waveforms for resistive load PHE13005 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 March 2018 8 / 13

WeEn Semiconductors PHE13005 Silicon diffused power transistor V = 300 V; V = - 5 V; L = 200 μH; L = 1 μH CC BB C B Fig. 14. Test circuit for inductive load switching Fig. 15. Switching times waveforms for inductive load PHE13005 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 March 2018 9 / 13

WeEn Semiconductors PHE13005 Silicon diffused power transistor 10. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A p A1 q mounting D1 base D L1(1) L2(1) Q b1(2) L (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) mL2a(1x). p q Q 4.7 1.40 0.9 1.6 1.3 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6 mm 2.54 3.0 4.1 1.25 0.6 1.0 1.0 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 08-04-23 SOT78 3-lead TO-220AB SC-46 08-06-13 PHE13005 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 March 2018 10 / 13

WeEn Semiconductors PHE13005 Silicon diffused power transistor Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without 11. Legal information limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure Document Product Definition or malfunction of an WeEn Semiconductors product can reasonably status [1][2] status [3] be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no Objective Development This document contains data from liability for inclusion and/or use of WeEn Semiconductors products in such [short] data the objective specification for product equipment or applications and therefore such inclusion and/or use is at the sheet development. customer’s own risk. Preliminary Qualification This document contains data from the Quick reference data — The Quick reference data is an extract of the [short] data preliminary specification. product data given in the Limiting values and Characteristics sections of this sheet document, and as such is not complete, exhaustive or legally binding. Product Production This document contains the product Applications — Applications that are described herein for any of these [short] data specification. products are for illustrative purposes only. WeEn Semiconductors makes sheet no representation or warranty that such applications will be suitable for the specified use without further testing or modification. [1] Please consult the most recently issued document before initiating or Customers are responsible for the design and operation of their applications completing a design. and products using WeEn Semiconductors products, and WeEn [2] The term 'short data sheet' is explained in section "Definitions". Semiconductors accepts no liability for any assistance with applications or [3] The product status of device(s) described in this document may have customer product design. It is customer’s sole responsibility to determine changed since this document was published and may differ in case of whether the WeEn Semiconductors product is suitable and fit for the multiple devices. The latest product status information is available on customer’s applications and products planned, as well as for the planned the Internet at URL http://www.ween-semi.com. application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Definitions WeEn Semiconductors does not accept any liability related to any default, Draft — The document is a draft version only. The content is still under damage, costs or problem which is based on any weakness or default internal review and subject to formal approval, which may result in in the customer’s applications or products, or the application or use by modifications or additions. WeEn Semiconductors does not give any customer’s third party customer(s). Customer is responsible for doing all representations or warranties as to the accuracy or completeness of necessary testing for the customer’s applications and products using WeEn information included herein and shall have no liability for the consequences Semiconductors products in order to avoid a default of the applications of use of such information. and the products or of the application or use by customer’s third party Short data sheet — A short data sheet is an extract from a full data sheet customer(s). WeEn does not accept any liability in this respect. with the same product type number(s) and title. A short data sheet is Limiting values — Stress above one or more limiting values (as defined in intended for quick reference only and should not be relied upon to contain the Absolute Maximum Ratings System of IEC 60134) will cause permanent detailed and full information. For detailed and full information see the damage to the device. Limiting values are stress ratings only and (proper) relevant full data sheet, which is available on request via the local WeEn operation of the device at these or any other conditions above those Semiconductors sales office. In case of any inconsistency or conflict with the given in the Recommended operating conditions section (if present) or the short data sheet, the full data sheet shall prevail. Characteristics sections of this document is not warranted. Constant or Product specification — The information and data provided in a Product repeated exposure to limiting values will permanently and irreversibly affect data sheet shall define the specification of the product as agreed between the quality and reliability of the device. WeEn Semiconductors and its customer, unless WeEn Semiconductors and No offer to sell or license — Nothing in this document may be interpreted customer have explicitly agreed otherwise in writing. In no event however, or construed as an offer to sell products that is open for acceptance or the shall an agreement be valid in which the WeEn Semiconductors product grant, conveyance or implication of any license under any copyrights, patents is deemed to offer functions and qualities beyond those described in the or other industrial or intellectual property rights. Product data sheet. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior Disclaimers authorization from competent authorities. Limited warranty and liability — Information in this document is believed Non-automotive qualified products — Unless this data sheet expressly to be accurate and reliable. However, WeEn Semiconductors does not states that this specific WeEn Semiconductors product is automotive give any representations or warranties, expressed or implied, as to the qualified, the product is not suitable for automotive use. It is neither qualified accuracy or completeness of such information and shall have no liability for nor tested in accordance with automotive testing or application requirements. the consequences of use of such information. WeEn Semiconductors takes WeEn Semiconductors accepts no liability for inclusion and/or use of non- no responsibility for the content in this document if provided by an information automotive qualified products in automotive equipment or applications. source outside of WeEn Semiconductors. In the event that customer uses the product for design-in and use in In no event shall WeEn Semiconductors be liable for any indirect, incidental, automotive applications to automotive specifications and standards, punitive, special or consequential damages (including - without limitation - customer (a) shall use the product without WeEn Semiconductors’ warranty lost profits, lost savings, business interruption, costs related to the removal of the product for such automotive applications, use and specifications, and or replacement of any products or rework charges) whether or not such (b) whenever customer uses the product for automotive applications beyond damages are based on tort (including negligence), warranty, breach of WeEn Semiconductors’ specifications such use shall be solely at customer’s contract or any other legal theory. own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer Notwithstanding any damages that customer might incur for any reason design and use of the product for automotive applications beyond WeEn whatsoever, WeEn Semiconductors’ aggregate and cumulative liability Semiconductors’ standard warranty and WeEn Semiconductors’ product towards customer for the products described herein shall be limited in specifications. accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. PHE13005 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 March 2018 11 / 13

WeEn Semiconductors PHE13005 Silicon diffused power transistor Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PHE13005 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 March 2018 12 / 13

WeEn Semiconductors PHE13005 Silicon diffused power transistor 12. Contents 1. General description .......................................................1 2. Features and benefits ...................................................1 3. Applications ...................................................................1 4. Quick reference data .....................................................1 5. Pinning information .......................................................2 6. Ordering information .....................................................2 7. Limiting values ..............................................................3 8. Thermal characteristics ................................................5 9. Characteristics...............................................................6 10. Package outline .........................................................10 11. Legal information.......................................................11 12. Contents .....................................................................13 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 30 March 2018 PHE13005 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 March 2018 13 / 13

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: W eEn Semiconductors: PHE13005,127 PHD13005,127