Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

PESD5Zx series Low capacitance unidirectional ESD protection diodes Rev. 02 — 4 April 2008 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in a SOD523(SC-79)ultrasmallandflatleadSurface-MountedDevice(SMD)plasticpackage designedtoprotectonesignallinefromthedamagecausedbyESDandothertransients. Table 1. Product overview Type number Package Configuration NXP JEITA PESD5Z2.5 SOD523 SC-79 single PESD5Z3.3 PESD5Z5.0 PESD5Z6.0 PESD5Z7.0 PESD5Z12 1.2 Features n ESD protection of one line n Low leakage current: I <1nA RM n Low diode capacitance n ESD protection up to30kV n Max. peak pulse power: P =260W n IEC61000-4-2; level4 (ESD) PP n Low clamping voltage: V =15V n IEC61000-4-5 (surge); I =20A CL PP 1.3 Applications n Computers and peripherals n Portable electronics n Audio and video equipment n Subscriber Identity Module (SIM) card protection n Cellular handsets and accessories n FireWire n 10/100/1000Mbit/sEthernet n High-speed data lines n Communication systems

PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 1.4 Quick reference data Table 2. Quick reference data T =25(cid:176) C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff voltage RWM PESD5Z2.5 - - 2.5 V PESD5Z3.3 - - 3.3 V PESD5Z5.0 - - 5.0 V PESD5Z6.0 - - 6.0 V PESD5Z7.0 - - 7.0 V PESD5Z12 - - 12.0 V C diode capacitance f=1MHz; V =0V d R PESD5Z2.5 - 229 300 pF PESD5Z3.3 - 172 200 pF PESD5Z5.0 - 89 150 pF PESD5Z6.0 - 78 150 pF PESD5Z7.0 - 69 150 pF PESD5Z12 - 35 75 pF 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol 1 cathode [1] 2 anode 1 2 1 2 006aaa152 [1] The marking bar indicates the cathode. 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PESD5Z2.5 SC-79 plastic surface-mounted package; 2leads SOD523 PESD5Z3.3 PESD5Z5.0 PESD5Z6.0 PESD5Z7.0 PESD5Z12 PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 4 April 2008 2 of 17

PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 4. Marking Table 5. Marking codes Type number Marking code PESD5Z2.5 N7 PESD5Z3.3 N8 PESD5Z5.0 N9 PESD5Z6.0 NA PESD5Z7.0 NB PESD5Z12 NC 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode P peak pulse power t =8/20m s [1][2] PP p PESD5Z2.5 - 260 W PESD5Z3.3 - 260 W PESD5Z5.0 - 180 W PESD5Z6.0 - 180 W PESD5Z7.0 - 180 W PESD5Z12 - 200 W I peak pulse current t =8/20m s [1][2] PP p PESD5Z2.5 - 20 A PESD5Z3.3 - 20 A PESD5Z5.0 - 10 A PESD5Z6.0 - 10 A PESD5Z7.0 - 10 A PESD5Z12 - 6 A Per device T junction temperature - 150 (cid:176) C j T ambient temperature - 65 +150 (cid:176) C amb T storage temperature - 65 +150 (cid:176) C stg [1] Non-repetitive current pulse 8/20m s exponential decay waveform according to IEC61000-4-5. [2] Measured from pin 1to2. PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 4 April 2008 3 of 17

PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes Table 7. ESD maximum ratings Symbol Parameter Conditions Min Max Unit Per diode V electrostatic discharge voltage ESD PESD5Zxseries IEC61000-4-2 [1][2] - 30 kV (contact discharge) machine model - 400 V MIL-STD-883(human - 10 kV body model) [1] Device stressed with ten non-repetitive ESDpulses. [2] Measured from pin1to2. Table 8. ESD standards compliance Standard Conditions Per diode IEC61000-4-2; level4 (ESD) >15kV(air); >8kV(contact) MIL-STD-883; class3 (human body model) >4kV 001aaa631 001aaa630 IPP 120 100 % IPP 100 % IPP; 8 m s 90 % (%) 80 e- t 50 % IPP; 20 m s 40 10 % tr = 0.7 ns to 1 ns t 0 0 10 20 30 40 30 ns t (m s) 60 ns Fig 1. 8/20m s pulse waveform according to Fig 2. ESD pulse waveform according to IEC61000-4-5 IEC61000-4-2 PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 4 April 2008 4 of 17

PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 6. Characteristics Table 9. Characteristics T =25(cid:176) C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff voltage RWM PESD5Z2.5 - - 2.5 V PESD5Z3.3 - - 3.3 V PESD5Z5.0 - - 5.0 V PESD5Z6.0 - - 6.0 V PESD5Z7.0 - - 7.0 V PESD5Z12 - - 12.0 V I reverse leakage current RM PESD5Z2.5 V =2.5V - 0.5 6 m A RWM PESD5Z3.3 V =3.3V - 8 50 nA RWM PESD5Z5.0 V =5.0V - 5 50 nA RWM PESD5Z6.0 V =6.0V - 2 10 nA RWM PESD5Z7.0 V =7.0V - <1 10 nA RWM PESD5Z12 V =12.0V - <1 10 nA RWM V breakdown voltage I =1mA BR R PESD5Z2.5 4 - - V PESD5Z3.3 5 - - V PESD5Z5.0 6.2 - - V PESD5Z6.0 6.8 - - V PESD5Z7.0 7.5 - - V PESD5Z12 14.1 - - V C diode capacitance f=1MHz; V =0V d R PESD5Z2.5 - 229 300 pF PESD5Z3.3 - 172 200 pF PESD5Z5.0 - 89 150 pF PESD5Z6.0 - 78 150 pF PESD5Z7.0 - 69 150 pF PESD5Z12 - 35 75 pF V clamping voltage I =5A [1][2] CL PP PESD5Z2.5 - 8 9 V PESD5Z3.3 - 8 10 V PESD5Z5.0 - 12 13 V PESD5Z6.0 - 12 13 V PESD5Z7.0 - 14 15 V PESD5Z12 - 27 30 V PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 4 April 2008 5 of 17

PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes Table 9. Characteristics …continued T =25(cid:176) C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V clamping voltage [1][2] CL PESD5Z2.5 I =20A - - 15 V PP PESD5Z3.3 I =20A - - 18 V PP PESD5Z5.0 I =10A - - 18 V PP PESD5Z6.0 I =10A - - 18 V PP PESD5Z7.0 I =10A - - 19 V PP PESD5Z12 I =6A - - 35 V PP r differential resistance I =5mA dif R PESD5Z2.5 - - 60 W PESD5Z3.3 - - 10 W PESD5Z5.0 - - 15 W PESD5Z6.0 - - 15 W PESD5Z7.0 - - 15 W PESD5Z12 - - 40 W [1] Non-repetitive current pulse 8/20m s exponential decay waveform according to IEC61000-4-5. [2] Measured from pin1to2. 104 006aab056 1.2 001aaa193 P(WPP) PPP PPP(25(cid:176)C) 103 (1) 0.8 102 (2) 0.4 10 1 0 1 10 102 103 104 0 50 100 150 200 tp (m s) Tj ((cid:176)C) T =25(cid:176) C amb (1) PESD5Z2.5; PESD5Z3.3 (2) PESD5Z5.0; PESD5Z6.0; PESD5Z7.0; PESD5Z12 Fig 3. Peak pulse power as a function of exponential Fig 4. Relative variation of peak pulse power as a pulse duration; typical values function of junction temperature; typical values PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 4 April 2008 6 of 17

PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 006aab057 006aab058 250 100 Cd Cd (pF) (pF) 200 80 150 60 (1) 100 40 (2) (1) (2) 50 (3) 20 (3) 0 0 0 1 2 3 4 5 0 4 8 12 VR (V) VR (V) f=1MHz; T =25(cid:176) C f=1MHz; T =25(cid:176) C amb amb (1) PESD5Z2.5 (1) PESD5Z6.0 (2) PESD5Z3.3 (2) PESD5Z7.0 (3) PESD5Z5.0 (3) PESD5Z12 Fig 5. Diode capacitance as a function of reverse Fig 6. Diode capacitance as a function of reverse voltage; typical values voltage; typical values I 006aab059 10 IR IR(25(cid:176)C) - VCL- VBR - VRWM V 1 - IRM - IR - + P-N 10- 1 - IPP - 100 - 50 0 50 100 150 Tj ((cid:176)C) 006aaa407 PESD5Z2.5; V =2.5V RWM PESD5Z3.3; V =3.3V RWM I is less than 50nA at 150(cid:176) C for: R PESD5Z5.0; V =5.0V RWM PESD5Z6.0; V =6.0V RWM PESD5Z7.0; V =7.0V RWM PESD5Z12; V =12.0V RWM Fig 7. Relative variation of reverse current as a Fig 8. V-Icharacteristics for a unidirectional function of junction temperature; typical values ESDprotection diode PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 4 April 2008 7 of 17

PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes ESD TESTER 4 GHz DIGITAL acc. to IEC 61000-4-2 OSCILLOSCOPE CZ = 150 pF; RZ = 330 W RG 223/U RZ 450 W 50 W coax 10· ATTENUATOR CZ 50 W DUT (DEVICE UNDER TEST) vertical scale = 10 A/div vertical scale = 10 A/div horizontal scale = 15 ns/div horizontal scale = 15 ns/div GND GND unclamped +8 kV ESD pulse waveform unclamped - 8 kV ESD pulse waveform (IEC 61000-4-2 network) (IEC 61000-4-2 network) vertical scale = 20 V/div horizontal scale = 100 ns/div GND GND vertical scale = 20 V/div horizontal scale = 100 ns/div clamped +8 kV ESD pulse waveform clamped - 8 kV ESD pulse waveform (IEC 61000-4-2 network) (IEC 61000-4-2 network) 006aab060 Fig 9. ESDclamping test setup and waveforms for PESD5Z2.5 PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 4 April 2008 8 of 17

PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes vertical scale = 20 V/div vertical scale = 20 V/div horizontal scale = 100 ns/div horizontal scale = 100 ns/div GND GND 006aab061 006aab062 Fig 10. PESD5Z3.3: Clamped +8kV ESDpulse Fig 11. PESD5Z3.3: Clamped- 8kV ESDpulse waveform (IEC61000-4-2 network) waveform (IEC61000-4-2 network) vertical scale = 20 V/div vertical scale = 20 V/div horizontal scale = 100 ns/div horizontal scale = 100 ns/div GND GND 006aab063 006aab064 Fig 12. PESD5Z5.0: Clamped +8kV ESDpulse Fig 13. PESD5Z5.0: Clamped- 8kV ESDpulse waveform (IEC61000-4-2 network) waveform (IEC61000-4-2 network) PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 4 April 2008 9 of 17

PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes vertical scale = 20 V/div vertical scale = 20 V/div horizontal scale = 100 ns/div horizontal scale = 100 ns/div GND GND 006aab065 006aab066 Fig 14. PESD5Z6.0: Clamped +8kV ESDpulse Fig 15. PESD5Z6.0: Clamped- 8kV ESDpulse waveform (IEC61000-4-2 network) waveform (IEC61000-4-2 network) vertical scale = 20 V/div vertical scale = 20 V/div horizontal scale = 100 ns/div horizontal scale = 100 ns/div GND GND 006aab067 006aab068 Fig 16. PESD5Z7.0: Clamped +8kV ESDpulse Fig 17. PESD5Z7.0: Clamped- 8kV ESDpulse waveform (IEC61000-4-2 network) waveform (IEC61000-4-2 network) PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 4 April 2008 10 of 17

PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes vertical scale = 20 V/div vertical scale = 20 V/div horizontal scale = 100 ns/div horizontal scale = 100 ns/div GND GND 006aab069 006aab070 Fig 18. PESD5Z12: Clamped +8kV ESDpulse Fig 19. PESD5Z12: Clamped- 8kV ESDpulse waveform (IEC61000-4-2 network) waveform (IEC61000-4-2 network) PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 4 April 2008 11 of 17

PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 7. Application information ThePESD5Zxseriesisdesignedfortheprotectionofoneunidirectionaldataorsignalline from the damage caused by ESD and surge pulses. The device may be used on lines where the signal polarities are either positive or negative with respect to ground. The PESD5Zxseries provides a surge capability of 260W per line for an 8/20m s waveform. line to be protected line to be protected (positive signal polarity) (negative signal polarity) PESD5Zx PESD5Zx ground ground unidirectional protection of one line 006aab071 Fig 20. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESD5Zx as close to the input terminal or connector as possible. 2. The path length between the PESD5Zx and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 4 April 2008 12 of 17

PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 8. Package outline 0.85 0.65 0.75 0.58 1 1.65 1.25 1.55 1.15 2 0.34 0.17 0.26 0.11 Dimensions in mm 02-12-13 Fig 21. Package outline SOD523(SC-79) 9. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 8000 10000 PESD5Z2.5 SOD523 2mm pitch, 8mm tape and reel - -315 - 4mm pitch, 8mm tape and reel -115 - -135 PESD5Z3.3 SOD523 2mm pitch, 8mm tape and reel - -315 - 4mm pitch, 8mm tape and reel -115 - -135 PESD5Z5.0 SOD523 2mm pitch, 8mm tape and reel - -315 - 4mm pitch, 8mm tape and reel -115 - -135 PESD5Z6.0 SOD523 2mm pitch, 8mm tape and reel - -315 - 4mm pitch, 8mm tape and reel -115 - -135 PESD5Z7.0 SOD523 2mm pitch, 8mm tape and reel - -315 - 4mm pitch, 8mm tape and reel -115 - -135 PESD5Z12 SOD523 2mm pitch, 8mm tape and reel - -315 - 4mm pitch, 8mm tape and reel -115 - -135 [1] For further information and the availability of packing methods, seeSection13. PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 4 April 2008 13 of 17

PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 10. Soldering 2.15 1.20 0.50 0.60 solder lands solder paste 0.30 solder resist 0.40 1.80 occupied area 1.90 mgs343 Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 22. Reflow soldering footprint SOD523(SC-79) PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 4 April 2008 14 of 17

PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD5ZX_SER_2 20080404 Product data sheet - PESD5ZX_SER_1 Modifications: • Table10: Type number updated to PESD5Z12 PESD5ZX_SER_1 20070813 Product data sheet - - PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 4 April 2008 15 of 17

PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. 12.2 Definitions malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of Draft —The document is a draft version only. The content is still under NXP Semiconductors products in such equipment or applications and internal review and subject to formal approval, which may result in therefore such inclusion and/or use is at the customer’s own risk. modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of Applications —Applications that are described herein for any of these informationincludedhereinandshallhavenoliabilityfortheconsequencesof products are for illustrative purposes only. NXP Semiconductors makes no use of such information. representation or warranty that such applications will be suitable for the specified use without further testing or modification. Short data sheet —A short data sheet is an extract from a full data sheet withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended Limiting values —Stress above one or more limiting values (as defined in forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent full information. For detailed and full information see the relevant full data damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof sheet, which is available on request via the local NXP Semiconductors sales the device at these or any other conditions above those given in the office. In case of any inconsistency or conflict with the short data sheet, the Characteristics sections of this document is not implied. Exposure to limiting full data sheet shall prevail. values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold 12.3 Disclaimers subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless General —Information in this document is believed to be accurate and explicitly otherwise agreed to in writing by NXP Semiconductors. In case of reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor any inconsistency or conflict between information in this document and such warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch terms and conditions, the latter will prevail. information and shall have no liability for the consequences of use of such No offer to sell or license —Nothing in this document may be interpreted information. or construed as an offer to sell products that is open for acceptance or the Right to make changes —NXPSemiconductorsreservestherighttomake grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents changes to information published in this document, including without or other industrial or intellectual property rights. limitation specifications and product descriptions, at any time and without notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. 12.4 Trademarks Suitability for use —NXP Semiconductors products are not designed, Notice:Allreferencedbrands,productnames,servicenamesandtrademarks authorized or warranted to be suitable for use in medical, military, aircraft, are the property of their respective owners. space or life support equipment, nor in applications where failure or 13. Contact information For additional information, please visit:http://www.nxp.com For sales office addresses, send an email to:salesaddresses@nxp.com PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 4 April 2008 16 of 17

PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 14. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 Application information. . . . . . . . . . . . . . . . . . 12 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 9 Packing information. . . . . . . . . . . . . . . . . . . . . 13 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 13 Contact information. . . . . . . . . . . . . . . . . . . . . 16 14 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 4 April 2008 Document identifier: PESD5ZX_SER_2