Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

PESD5V0X1BCL Extremely low capacitance bidirectional ESD protection diode Rev. 1 — 12 March 2012 Product data sheet 1. Product profile 1.1 General description Extremely low capacitance bidirectional ElectroStatic Discharge(ESD) protection diode in a leadless ultra small SOD882 (DFN1006-2) Surface-Mounted Device(SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. The combination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection. 1.2 Features and benefits  Bidirectional ESD protection of oneline  ESD protection up to8kV  Extremely low capacitance:  IEC61000-4-2; level4(ESD) C =0.49pF d  Low clamping voltage: V =18V  AEC-Q101 qualified CL  Ultra low leakage current: I =1nA RM 1.3 Applications  Computers and peripherals  Portable electronics  Audio and video equipment  SIM card protection  Cellular handsets and accessories  High-speed data lines  10/100/1000Mbit/sEthernet  Communication systems  USB, High-Definition Multimedia Interface(HDMI), FireWire 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per device V reverse standoff voltage - - 5.5 V RWM C diode capacitance f=1MHz; V =0V - 0.49 0.60 pF d R

PESD5V0X1BCL NXP Semiconductors Extremely low capacitance bidirectional ESD protection diode 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode(diode1) 2 cathode(diode2) 1 2 1 2 sym045 Transparent top view 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD5V0X1BCL DFN1006-2 leadless ultra small plastic package; 2terminals; SOD882 body1.00.60.5mm 4. Marking Table 4. Marking codes Type number Marking code PESD5V0X1BCL 11 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device I rated peak pulse current t =8/20s [1] - 1.7 A PPM p T junction temperature - 150 C j T ambient temperature 55 +150 C amb T storage temperature 65 +150 C stg [1] Device stressed with ten non-repetitive current pulses (8/20s exponential decay waveform according to IEC 61000-4-5 and IEC61643-321). PESD5V0X1BCL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 12 March 2012 2 of 12

PESD5V0X1BCL NXP Semiconductors Extremely low capacitance bidirectional ESD protection diode Table 6. ESD maximum ratings T =25C unless otherwise specified. amb Symbol Parameter Conditions Min Max Unit Per device V electrostatic discharge voltage IEC61000-4-2 [1] - 8 kV ESD (contact discharge) machine model - 400 V MIL-STD-883 - 10 kV (humanbody model) [1] Device stressed with ten non-repetitive ESDpulses. T able 7. ESD standards compliance Standard Conditions Per device IEC61000-4-2; level4(ESD) >8kV(contact) MIL-STD-883; class3B (human body model) >8kV 001aaa631 001aaa630 IPP 120 100 % IPP 100 % IPP; 8 μs 90 % (%) 80 e−t 50 % IPP; 20 μs 40 10 % tr = 0.7 ns to 1 ns t 0 0 10 20 30 40 30 ns t (μs) 60 ns Fig 1. 8/20s pulse waveform according to Fig 2. ESDpulse waveform according to IEC61000-4-5 IEC61000-4-2 PESD5V0X1BCL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 12 March 2012 3 of 12

PESD5V0X1BCL NXP Semiconductors Extremely low capacitance bidirectional ESD protection diode 6. Characteristics Table 8. Characteristics T =25C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit Per device V reverse standoff - - 5.5 V RWM voltage I reverse leakage current V =5.5V - <1 10 nA RM RWM V breakdown voltage I =10mA 8.1 9.8 12.3 V BR R C diode capacitance f=1MHz; V =0V - 0.49 0.60 pF d R V clamping voltage I =1.7A [1] - - 18 V CL PPM r dynamic resistance I =10A [2] - 0.9 - dyn R [1] Device stressed with 8/20s exponential decay waveform according to IEC61000-4-5 and IEC61643-321. [2] Non-repetitive current pulse, Transmission Line Pulse (TLP) t =100ns; square pulse; p ANS/IESDSTM5-1-2008. 006aac987 IPPM 0.6 IPP Cd (pF) 0.5 0.4 IR 0.3 −VCL−VBR −VRWM IRM −IRM VRWM VBR VCL −IR 0.2 − + 0.1 0.0 −IPP 0 1 2 3 4 5 VR (V) −IPPM 006aab325 f=1MHz; Tamb=25C Fig 3. Diode capacitance as a function of reverse Fig 4. V-Icharacteristics for a bidirectional voltage; typical values ESDprotection diode PESD5V0X1BCL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 12 March 2012 4 of 12

PESD5V0X1BCL NXP Semiconductors Extremely low capacitance bidirectional ESD protection diode ESD TESTER 4 GHz DIGITAL RG 223/U OSCILLOSCOPE Rd 450 Ω 50 Ω coax 10x ATTENUATOR Cs 50 Ω DUT (DEVICE IEC 61000-4-2 network UNDER Cs = 150 pF; Rd = 330 Ω TEST) vertical scale = 2 kV/div vertical scale = 20 V/div horizontal scale = 10 ns/div horizontal scale = 10 ns/div GND GND unclamped +8 kV ESD pulse waveform clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) (IEC 61000-4-2 network) vertical scale = 2 kV/div vertical scale = 20 V/div horizontal scale = 10 ns/div horizontal scale = 10 ns/div GND GND unclamped -8 kV ESD pulse waveform clamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) (IEC 61000-4-2 network) 006aac988 Fig 5. ESD clamping test setup and waveforms PESD5V0X1BCL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 12 March 2012 5 of 12

PESD5V0X1BCL NXP Semiconductors Extremely low capacitance bidirectional ESD protection diode 7. Application information PESD5V0X1BCL is designed for the protection of one bidirectional data or signal line from surge pulses and ESD damage. The device is suitable on lines where the signal polarities are both, positive and negative with respect to ground. line to be protected PESD5V0X1BCL GND 006aac989 Fig 6. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient(EFT) and surge transients. The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. Minimize the path length between the device and the protected line. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board(PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Use ground planes whenever possible. For multilayer PCBs, use ground vias. 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PESD5V0X1BCL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 12 March 2012 6 of 12

PESD5V0X1BCL NXP Semiconductors Extremely low capacitance bidirectional ESD protection diode 9. Package outline 0.62 0.50 0.55 0.46 0.30 2 0.22 1.02 0.65 0.95 0.30 0.22 1 0.55 cathode marking on top side (if applicable) 0.47 Dimensions in mm 03-04-17 Generic drawing for SOD882 package. This product has no cathode marking. Fig 7. Package outline PESD5V0X1BCL(SOD882/DFN1006-2) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 10000 PESD5V0X1BCL SOD882 2mm pitch, 8mm tape and reel -315 [1] For further information and the availability of packing methods, see Section14. PESD5V0X1BCL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 12 March 2012 7 of 12

PESD5V0X1BCL NXP Semiconductors Extremely low capacitance bidirectional ESD protection diode 11. Soldering 1.3 0.7 R0.05 (8×) solder lands 0.6 0.7 0.8 solder resist 0.9 (2×) (2×) (2×) solder paste occupied area 0.3 (2×) Dimensions in mm 0.4 (2×) 0.5 (2×) sod882_fr Reflow soldering is the only recommended soldering method. Fig 8. Reflow soldering footprint PESD5V0X1BCL(SOD882/DFN1006-2) PESD5V0X1BCL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 12 March 2012 8 of 12

PESD5V0X1BCL NXP Semiconductors Extremely low capacitance bidirectional ESD protection diode 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD5V0X1BCLv.1 20120312 Product data sheet - - PESD5V0X1BCL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 12 March 2012 9 of 12

PESD5V0X1BCL NXP Semiconductors Extremely low capacitance bidirectional ESD protection diode 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 13.2 Definitions Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, Draft — The document is a draft version only. The content is still under authorized or warranted to be suitable for use in life support, life-critical or internal review and subject to formal approval, which may result in safety-critical systems or equipment, nor in applications where failure or modifications or additions. NXP Semiconductors does not give any malfunction of an NXP Semiconductors product can reasonably be expected representations or warranties as to the accuracy or completeness of to result in personal injury, death or severe property or environmental information included herein and shall have no liability for the consequences of damage. NXP Semiconductors and its suppliers accept no liability for use of such information. inclusion and/or use of NXP Semiconductors products in such equipment or Short data sheet — A short data sheet is an extract from a full data sheet applications and therefore such inclusion and/or use is at the customer's own with the same product type number(s) and title. A short data sheet is intended risk. for quick reference only and should not be relied upon to contain detailed and Applications — Applications that are described herein for any of these full information. For detailed and full information see the relevant full data products are for illustrative purposes only. NXP Semiconductors makes no sheet, which is available on request via the local NXP Semiconductors sales representation or warranty that such applications will be suitable for the office. In case of any inconsistency or conflict with the short data sheet, the specified use without further testing or modification. full data sheet shall prevail. Customers are responsible for the design and operation of their applications Product specification — The information and data provided in a Product and products using NXP Semiconductors products, and NXP Semiconductors data sheet shall define the specification of the product as agreed between accepts no liability for any assistance with applications or customer product NXP Semiconductors and its customer, unless NXP Semiconductors and design. It is customer’s sole responsibility to determine whether the NXP customer have explicitly agreed otherwise in writing. In no event however, Semiconductors product is suitable and fit for the customer’s applications and shall an agreement be valid in which the NXP Semiconductors product is products planned, as well as for the planned application and use of deemed to offer functions and qualities beyond those described in the customer’s third party customer(s). Customers should provide appropriate Product data sheet. design and operating safeguards to minimize the risks associated with their applications and products. 13.3 Disclaimers NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s Limited warranty and liability — Information in this document is believed to third party customer(s). Customer is responsible for doing all necessary be accurate and reliable. However, NXP Semiconductors does not give any testing for the customer’s applications and products using NXP representations or warranties, expressed or implied, as to the accuracy or Semiconductors products in order to avoid a default of the applications and completeness of such information and shall have no liability for the the products or of the application or use by customer’s third party consequences of use of such information. NXP Semiconductors takes no customer(s). NXP does not accept any liability in this respect. responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC60134) will cause permanent In no event shall NXP Semiconductors be liable for any indirect, incidental, damage to the device. Limiting values are stress ratings only and (proper) punitive, special or consequential damages (including - without limitation - lost operation of the device at these or any other conditions above those given in profits, lost savings, business interruption, costs related to the removal or the Recommended operating conditions section (if present) or the replacement of any products or rework charges) whether or not such Characteristics sections of this document is not warranted. Constant or damages are based on tort (including negligence), warranty, breach of repeated exposure to limiting values will permanently and irreversibly affect contract or any other legal theory. the quality and reliability of the device. Notwithstanding any damages that customer might incur for any reason Terms and conditions of commercial sale — NXP Semiconductors whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards products are sold subject to the general terms and conditions of commercial customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual Right to make changes — NXP Semiconductors reserves the right to make agreement is concluded only the terms and conditions of the respective changes to information published in this document, including without agreement shall apply. NXP Semiconductors hereby expressly objects to limitation specifications and product descriptions, at any time and without applying the customer’s general terms and conditions with regard to the notice. This document supersedes and replaces all information supplied prior purchase of NXP Semiconductors products by customer. to the publication hereof. PESD5V0X1BCL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 12 March 2012 10 of 12

PESD5V0X1BCL NXP Semiconductors Extremely low capacitance bidirectional ESD protection diode No offer to sell or license — Nothing in this document may be interpreted or Quick reference data — The Quick reference data is an extract of the construed as an offer to sell products that is open for acceptance or the grant, product data given in the Limiting values and Characteristics sections of this conveyance or implication of any license under any copyrights, patents or document, and as such is not complete, exhaustive or legally binding. other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein 13.4 Trademarks may be subject to export control regulations. Export might require a prior authorization from competent authorities. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PESD5V0X1BCL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 12 March 2012 11 of 12

PESD5V0X1BCL NXP Semiconductors Extremely low capacitance bidirectional ESD protection diode 15. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Application information. . . . . . . . . . . . . . . . . . . 6 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . 7 10 Packing information . . . . . . . . . . . . . . . . . . . . . 7 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 14 Contact information. . . . . . . . . . . . . . . . . . . . . 11 15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 March 2012 Document identifier: PESD5V0X1BCL