Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

PESDxS5UD series Fivefold ESD protection diode arrays Rev. 02 — 7 December 2006 Product data sheet 1. Product profile 1.1 General description FivefoldElectroStaticDischarge(ESD)protectiondiodearraysinaSOT457(SC-74)small Surface-MountedDevice(SMD)plasticpackagedesignedtoprotectuptofivesignallines from the damage caused by ESD and other transients. 1.2 Features n ESD protection of up to five lines n ESD protection up to 30kV n Max. peak pulse power: P =200W n IEC61000-4-2; level4 (ESD) PP n Ultra low leakage current: I =50pA n IEC61000-4-5 (surge); I up to 20A RM PP n Low clamping voltage: V =12V at CL I =20A PP 1.3 Applications n Computers and peripherals n Communication systems n Audio and video equipment n Portable electronics n Cellular handsets and accessories n Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff voltage RWM PESD3V3S5UD - - 3.3 V PESD5V0S5UD - - 5 V PESD12VS5UD - - 12 V PESD15VS5UD - - 15 V PESD24VS5UD - - 24 V

PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit C diode capacitance f=1MHz; V =0V d R PESD3V3S5UD - 215 300 pF PESD5V0S5UD - 165 220 pF PESD12VS5UD - 73 100 pF PESD15VS5UD - 60 90 pF PESD24VS5UD - 45 70 pF 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 cathode1 6 5 4 2 common anode 1 6 3 cathode2 2 5 4 cathode3 1 2 3 3 4 5 cathode4 006aaa159 6 cathode5 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD3V3S5UD SC-74 plastic surface-mounted package (TSOP6); 6leads SOT457 PESD5V0S5UD PESD12VS5UD PESD15VS5UD PESD24VS5UD 4. Marking Table 4. Marking codes Type number Marking code PESD3V3S5UD E1 PESD5V0S5UD E2 PESD12VS5UD E3 PESD15VS5UD E4 PESD24VS5UD E5 PESDXS5UD_SER_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 7 December 2006 2 of 13

PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode P peak pulse power t =8/20m s [1][2] - 200 W PP p I peak pulse current t =8/20m s [1][2] PP p PESD3V3S5UD - 20 A PESD5V0S5UD - 20 A PESD12VS5UD - 10 A PESD15VS5UD - 6 A PESD24VS5UD - 4 A Per device T junction temperature - 150 (cid:176) C j T ambient temperature - 65 +150 (cid:176) C amb T storage temperature - 65 +150 (cid:176) C stg [1] Non-repetitive current pulse 8/20m s exponential decay waveform according to IEC61000-4-5. [2] Measured from pin 1, 3, 4, 5or 6to2. Table 6. ESD maximum ratings Symbol Parameter Conditions Min Max Unit Per diode V electrostatic discharge voltage IEC61000-4-2 [1][2] ESD (contact discharge) PESD3V3S5UD - 30 kV PESD5V0S5UD - 30 kV PESD12VS5UD - 30 kV PESD15VS5UD - 30 kV PESD24VS5UD - 23 kV PESDxS5UDseries MIL-STD-883(human - 10 kV body model) [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1, 3, 4, 5or 6to2. Table 7. ESD standards compliance Standard Conditions Per diode IEC61000-4-2; level4 (ESD) >15kV (air); >8kV (contact) MIL-STD-883; class3 (human body model) >10kV PESDXS5UD_SER_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 7 December 2006 3 of 13

PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays 001aaa631 001aaa630 IPP 120 100 % IPP 100 % IPP; 8 m s 90 % (%) 80 e- t 50 % IPP; 20 m s 40 10 % tr = 0.7 ns to 1 ns t 0 0 10 20 30 40 30 ns t (m s) 60 ns Fig 1. 8/20m s pulse waveform according to Fig 2. ESD pulse waveform according to IEC61000-4-5 IEC61000-4-2 6. Characteristics Table 8. Characteristics T =25(cid:176) C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff voltage RWM PESD3V3S5UD - - 3.3 V PESD5V0S5UD - - 5 V PESD12VS5UD - - 12 V PESD15VS5UD - - 15 V PESD24VS5UD - - 24 V I reverse leakage current RM PESD3V3S5UD V =3.3V - 300 800 nA RWM PESD5V0S5UD V =5V - 80 200 nA RWM PESD12VS5UD V =12V - 0.05 15 nA RWM PESD15VS5UD V =15V - 0.05 15 nA RWM PESD24VS5UD V =24V - 0.05 15 nA RWM V breakdown voltage I =1mA BR R PESD3V3S5UD 5.3 5.6 5.9 V PESD5V0S5UD 6.4 6.8 7.2 V PESD12VS5UD 12.5 14.5 16 V PESD15VS5UD 17 18 19 V PESD24VS5UD 25.5 27 29 V PESDXS5UD_SER_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 7 December 2006 4 of 13

PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays Table 8. Characteristics …continued T =25(cid:176) C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit C diode capacitance f=1MHz; V =0V d R PESD3V3S5UD - 215 300 pF PESD5V0S5UD - 165 220 pF PESD12VS5UD - 73 100 pF PESD15VS5UD - 60 90 pF PESD24VS5UD - 45 70 pF V clamping voltage [1][2] CL PESD3V3S5UD I =1A - - 8 V PP I =20A - - 12 V PP PESD5V0S5UD I =1A - - 8 V PP I =20A - - 13 V PP PESD12VS5UD I =1A - - 17 V PP I =10A - - 24 V PP PESD15VS5UD I =1A - - 22 V PP I =6A - - 33 V PP PESD24VS5UD I =1A - - 33 V PP I =4A - - 52 V PP r differential resistance I =5mA - - 25 W dif R [1] Non-repetitive current pulse 8/20m s exponential decay waveform according to IEC61000-4-5. [2] Measured from pin 1, 3, 4, 5or 6to2. 104 006aaa698 1.2 001aaa633 P(WPP) PPP PPP(25(cid:176)C) 103 0.8 102 0.4 10 1 0 1 10 102 103 104 0 50 100 150 200 tp (m s) Tj ((cid:176)C) T =25(cid:176) C amb Fig 3. Peak pulse power as a function of exponential Fig 4. Relative variation of peak pulse power as a pulse duration; typical values function of junction temperature; typical values PESDXS5UD_SER_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 7 December 2006 5 of 13

PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays 006aaa700 006aaa701 220 80 Cd Cd (pF) (pF) 180 60 140 40 (1) (1) (2) (2) 100 20 (3) 60 0 0 1 2 3 4 5 0 5 10 15 20 25 VR (V) VR (V) f=1MHz; T =25(cid:176) C f=1MHz; T =25(cid:176) C amb amb (1) PESD3V3S5UD (1) PESD12VS5UD (2) PESD5V0S5UD (2) PESD15VS5UD (3) PESD24VS5UD Fig 5. Diode capacitance as a function of reverse Fig 6. Diode capacitance as a function of reverse voltage; typical values voltage; typical values I 006aaa699 10 IRM IRM(25(cid:176)C) - VCL- VBR - VRWM V 1 - IRM - IR - + P-N 10- 1 - IPP - 100 - 50 0 50 100 150 Tj ((cid:176)C) 006aaa407 PESD3V3S5UD; PESD5V0S5UD I is less than 5nA at 150(cid:176) C for: R PESD12VS5UD; PESD15VS5UD; PESD24VS5UD Fig 7. Relativevariationofreverseleakagecurrentas Fig 8. V-I characteristics for a unidirectional ESD a function of junction temperature; typical protection diode values PESDXS5UD_SER_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 7 December 2006 6 of 13

PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays ESD TESTER 4 GHz DIGITAL RG 223/U OSCILLOSCOPE Rd 450 W 50 W coax 10· ATTENUATOR Cs 50 W DUT (DEVICE IEC 61000-4-2 network UNDER Cs = 150 pF; Rd = 330 W TEST) vertical scale = 200 V/div vertical scale = 20 V/div horizontal scale = 50 ns/div horizontal scale = 50 ns/div PESD24VS5UD GND PESD15VS5UD GND PESD12VS5UD GND PESD5V0S5UD GND GND PESD3V3S5UD GND unclamped +1 kV ESD voltage waveform clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) (IEC 61000-4-2 network) GND GND vertical scale = 200 V/div vertical scale = 10 V/div horizontal scale = 50 ns/div horizontal scale = 50 ns/div unclamped - 1 kV ESD voltage waveform clamped - 1 kV ESD voltage waveform (IEC 61000-4-2 network) (IEC 61000-4-2 network) 006aaa702 Fig 9. ESD clamping test setup and waveforms PESDXS5UD_SER_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 7 December 2006 7 of 13

PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays 7. Application information The PESDxS5UDseries is designed for the protection of up to five unidirectional data linesfromthedamagecausedbyESDandsurgepulses.ThePESDxS5UDseriesmaybe used on lines where the signal polarities are both, positive and negative with respect to ground. The PESDxS5UDseries provides a surge capability of 200W per line for an 8/20m s waveform. high-speed data lines PESDxS5UD PESDxS5UD 1 6 1 6 2 5 2 5 3 4 3 4 unidirectional protection of 5 lines bidirectional protection of 4 lines 006aaa019 Fig 10. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESDxS5UD as close to the input terminal or connector as possible. 2. The path length between the PESDxS5UD and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. PESDXS5UD_SER_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 7 December 2006 8 of 13

PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays 8. Package outline 3.1 1.1 2.7 0.9 6 5 4 0.6 0.2 3.0 1.7 2.5 1.3 pin 1 index 1 2 3 0.40 0.26 0.95 0.25 0.10 1.9 Dimensions in mm 04-11-08 Fig 11. Package outline SOT457 (SC-74) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 PESD3V3S5UD SOT457 4mm pitch, 8mm tape and reel; T1 [2] -115 -135 4mm pitch, 8mm tape and reel; T2 [3] -125 -165 PESD5V0S5UD SOT457 4mm pitch, 8mm tape and reel; T1 [2] -115 -135 4mm pitch, 8mm tape and reel; T2 [3] -125 -165 PESD12VS5UD SOT457 4mm pitch, 8mm tape and reel; T1 [2] -115 -135 4mm pitch, 8mm tape and reel; T2 [3] -125 -165 PESD15VS5UD SOT457 4mm pitch, 8mm tape and reel; T1 [2] -115 -135 4mm pitch, 8mm tape and reel; T2 [3] -125 -165 PESD24VS5UD SOT457 4mm pitch, 8mm tape and reel; T1 [2] -115 -135 4mm pitch, 8mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, seeSection13. [2] T1: normal taping [3] T2: reverse taping PESDXS5UD_SER_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 7 December 2006 9 of 13

PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays 10. Soldering 3.45 1.95 solder lands 0.95 solder resist 3.30 2.825 0.45 0.55 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 12. Reflow soldering footprint SOT457 (SC-74) 5.30 solder lands 5.05 0.45 1.45 4.45 solder resist occupied area 1.40 msc423 4.30 Dimensions in mm Fig 13. Wave soldering footprint SOT457 (SC-74) PESDXS5UD_SER_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 7 December 2006 10 of 13

PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESDXS5UD_SER_2 20061207 Product data sheet - PESDXS5UD_SER_1 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Table 2 “Pinning”: symbol drawing amended • Table 5 “Limiting values”: amended • Table 6 “ESD maximum ratings”: amended • Table 7 “ESD standards compliance”: amended • Table 8 “Characteristics”: V minimum and maximum values for PESD15VS5UD adapted BR • Figure7: figure notes adapted • Section 10 “Soldering”: added PESDXS5UD_SER_1 20060404 Product data sheet - - PESDXS5UD_SER_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 7 December 2006 11 of 13

PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. 12.2 Definitions malfunctionofaNXPSemiconductorsproductcanreasonablybeexpectedto result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Draft —The document is a draft version only. The content is still under Semiconductors products in such equipment or applications and therefore internal review and subject to formal approval, which may result in such inclusion and/or use is at the customer’s own risk. modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of Applications —Applications that are described herein for any of these informationincludedhereinandshallhavenoliabilityfortheconsequencesof products are for illustrative purposes only. NXP Semiconductors makes no use of such information. representation or warranty that such applications will be suitable for the specified use without further testing or modification. Short data sheet —A short data sheet is an extract from a full data sheet withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended Limiting values —Stress above one or more limiting values (as defined in forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent full information. For detailed and full information see the relevant full data damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof sheet, which is available on request via the local NXP Semiconductors sales the device at these or any other conditions above those given in the office. In case of any inconsistency or conflict with the short data sheet, the Characteristics sections of this document is not implied. Exposure to limiting full data sheet shall prevail. values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold 12.3 Disclaimers subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless General —Information in this document is believed to be accurate and explicitly otherwise agreed to in writing by NXP Semiconductors. In case of reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor any inconsistency or conflict between information in this document and such warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch terms and conditions, the latter will prevail. information and shall have no liability for the consequences of use of such No offer to sell or license —Nothing in this document may be interpreted information. or construed as an offer to sell products that is open for acceptance or the Right to make changes —NXPSemiconductorsreservestherighttomake grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents changes to information published in this document, including without or other industrial or intellectual property rights. limitation specifications and product descriptions, at any time and without notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. 12.4 Trademarks Suitability for use —NXP Semiconductors products are not designed, Notice:Allreferencedbrands,productnames,servicenamesandtrademarks authorized or warranted to be suitable for use in medical, military, aircraft, are the property of their respective owners. space or life support equipment, nor in applications where failure or 13. Contact information For additional information, please visit:http://www.nxp.com For sales office addresses, send an email to:salesaddresses@nxp.com PESDXS5UD_SER_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 7 December 2006 12 of 13

PESDxS5UD series NXP Semiconductors Fivefold ESD protection diode arrays 14. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Application information. . . . . . . . . . . . . . . . . . . 8 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 Contact information. . . . . . . . . . . . . . . . . . . . . 12 14 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2006. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 7 December 2006 Document identifier: PESDXS5UD_SER_2