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PESDxS2UQ series Double ESD protection diodes in SOT663 package Rev. 04 — 26 January 2010 Product data sheet 1. Product profile 1.1 General description Unidirectional double ElectroStaticDischarge(ESD) protection diodes in a SOT663 ultra small and flat lead Surface-MountedDevice(SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients. 1.2 Features (cid:132) Unidirectional ESD protection of up to (cid:132) ESD protection up to30kV two lines (cid:132) Max. peak pulse power: P =150W (cid:132) IEC61000-4-2; level4 (ESD) PP att =8/20μs p (cid:132) Low clamping voltage: V =20V (cid:132) IEC61000-4-5 (surge); I =15A CL PP atI =15A att =8/20μs PP p (cid:132) Low reverse leakage current: I <1nA RM 1.3 Applications (cid:132) Computers and peripherals (cid:132) High-speed data lines (cid:132) Audio and video equipment (cid:132) Parallel ports (cid:132) Communication systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse standoff voltage RWM PESD3V3S2UQ - - 3.3 V PESD5V0S2UQ - - 5 V PESD12VS2UQ - - 12 V PESD15VS2UQ - - 15 V PESD24VS2UQ - - 24 V C diode capacitance f=1MHz; V =0V d R PESD3V3S2UQ - 200 275 pF PESD5V0S2UQ - 150 215 pF PESD12VS2UQ - 38 100 pF PESD15VS2UQ - 32 70 pF PESD24VS2UQ - 23 50 pF

PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode 1 3 3 2 cathode 2 3 common anode 1 2 1 2 006aaa154 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD3V3S2UQ - plastic surface-mounted package; 3leads SOT663 PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ 4. Marking Table 4. Marking codes Type number Marking code PESD3V3S2UQ E1 PESD5V0S2UQ E2 PESD12VS2UQ E3 PESD15VS2UQ E4 PESD24VS2UQ E5 PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 26 January 2010 2 of 13

PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode P peak pulse power t =8/20μs [1][2] - 150 W PP p I peak pulse current t =8/20μs [1][2] PP p PESD3V3S2UQ - 15 A PESD5V0S2UQ - 15 A PESD12VS2UQ - 5 A PESD15VS2UQ - 5 A PESD24VS2UQ - 3 A Per device T junction temperature - 150 °C j T ambient temperature −65 +150 °C amb T storage temperature −65 +150 °C stg [1] Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5. [2] Measured across either pins1 and 3 or pins2 and 3. T able 6. ESD maximum ratings T =25°C unless otherwise specified. amb Symbol Parameter Conditions Min Max Unit Per diode V electrostatic discharge IEC61000-4-2 [1][2] ESD voltage (contact discharge) PESD3V3S2UQ - 30 kV PESD5V0S2UQ - 30 kV PESD12VS2UQ - 30 kV PESD15VS2UQ - 30 kV PESD24VS2UQ - 23 kV PESDxS2UQ series MIL-STD-883 - 10 kV (humanbody model) [1] Device stressed with ten non-repetitive ESDpulses. [2] Measured across either pins1 and 3 or pins2 and 3. Table 7. ESD standards compliance Standard Conditions Per diode IEC61000-4-2; level4 (ESD) >15kV(air); >8kV(contact) MIL-STD-883; class3 (human body model) >4kV PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 26 January 2010 3 of 13

PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 001aaa631 001aaa630 IPP 120 100 % IPP 100 % IPP; 8 μs 90 % (%) 80 e−t 50 % IPP; 20 μs 40 10 % tr = 0.7 ns to 1 ns t 0 0 10 20 30 40 30 ns t (μs) 60 ns Fig 1. 8/20μs pulse waveform according to Fig 2. ESD pulse waveform according to IEC61000-4-5 IEC61000-4-2 6. Characteristics Table 8. Characteristics T =25°C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff RWM voltage PESD3V3S2UQ - - 3.3 V PESD5V0S2UQ - - 5 V PESD12VS2UQ - - 12 V PESD15VS2UQ - - 15 V PESD24VS2UQ - - 24 V I reverse leakage current RM PESD3V3S2UQ V =3.3V - 0.55 3 μA RWM PESD5V0S2UQ V =5V - 50 300 nA RWM PESD12VS2UQ V =12V - <1 30 nA RWM PESD15VS2UQ V =15V - <1 50 nA RWM PESD24VS2UQ V =24V - <1 50 nA RWM V breakdown voltage I =5mA BR R PESD3V3S2UQ 5.2 5.6 6.0 V PESD5V0S2UQ 6.4 6.8 7.2 V PESD12VS2UQ 14.7 15.0 15.3 V PESD15VS2UQ 17.6 18.0 18.4 V PESD24VS2UQ 26.5 27.0 27.5 V PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 26 January 2010 4 of 13

PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package Table 8. Characteristics …continued T =25°C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit C diode capacitance f=1MHz; V =0V d R PESD3V3S2UQ - 200 275 pF PESD5V0S2UQ - 150 215 pF PESD12VS2UQ - 38 100 pF PESD15VS2UQ - 32 70 pF PESD24VS2UQ - 23 50 pF V clamping voltage [1][2] CL PESD3V3S2UQ I =1A - - 8 V PP I =15A - - 20 V PP PESD5V0S2UQ I =1A - - 9 V PP I =15A - - 20 V PP PESD12VS2UQ I =1A - - 19 V PP I =5A - - 35 V PP PESD15VS2UQ I =1A - - 23 V PP I =5A - - 40 V PP PESD24VS2UQ I =1A - - 36 V PP I =3A - - 70 V PP r differential resistance dif PESD3V3S2UQ I =5mA - - 40 Ω R PESD5V0S2UQ I =5mA - - 15 Ω R PESD12VS2UQ I =5mA - - 15 Ω R PESD15VS2UQ I =1mA - - 225 Ω R PESD24VS2UQ I =0.5mA - - 300 Ω R [1] Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5. [2] Measured across either pins1 and 3 or pins2 and 3. PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 26 January 2010 5 of 13

PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 104 001aaa726 1.2 001aaa193 PPP PPP (W) PPP(25°C) 103 0.8 102 0.4 10 0 1 10 102 103 0 50 100 150 200 tp (μs) Tj (°C) Tamb=25°C Fig 3. Peak pulse power dissipation as a function of Fig 4. Relative variation of peak pulse power as a pulse duration; typical values function of junction temperature; typicalvalues 001aaa727 001aaa728 240 50 Cd Cd (pF) (pF) 200 40 160 30 (1) 120 20 (2) (1) (2) 80 10 (3) 40 0 0 1 2 3 4 5 0 5 10 15 20 25 VR (V) VR (V) f=1MHz; Tamb=25°C f=1MHz; Tamb=25°C (1) PESD3V3S2UQ; V =3.3V (1) PESD12VS2UQ; V =12V RWM RWM (2) PESD5V0S2UQ; V =5V (2) PESD15VS2UQ; V =15V RWM RWM (3) PESD24VS2UQ; V =24V RWM Fig 5. Diode capacitance as a function of reverse Fig 6. Diode capacitance as a function of reverse voltage; typical values voltage; typical values PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 26 January 2010 6 of 13

PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 001aaa729 10 IRM IRM(25°C) (1) (2) 1 10−1 −100 −50 0 50 100 150 Tj (°C) (1) PESD3V3S2UQ; V =3.3V RWM (2) PESD5V0S2UQ; V =5V RWM IR is less than 15nA at 150°C for: PESD12VS2UQ; V =12V RWM PESD15VS2UQ; V =15V RWM PESD24VS2UQ; V =24V RWM Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 26 January 2010 7 of 13

PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package ESD TESTER RG 223/U 4 GHz DIGITAL RZ 450 Ω 50 Ω coax 10× OSCILLOSCOPE ATTENUATOR CZ 50 Ω note 1 Note 1: IEC61000-4-2 network CZ = 150 pF; RZ = 330 Ω DUT: PESDxS2UQ vertical scale = 200 V/div vertical scale = 20 V/div horizontal scale = 50 ns/div horizontal scale = 50 ns/div PESD24VS2UQ GND PESD15VS2UQ GND PESD12VS2UQ GND GND PESD5V2S2UQ GND GND PESD3V3S2UQ unclamped +1 kV ESD voltage waveform clamped +1 kV ESD voltage waveform (IEC61000-4-2 network) (IEC61000-4-2 network) GND GND vertical scale = 200 V/div vertical scale = 10 V/div horizontal scale = 50 ns/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform clamped −1 kV ESD voltage waveform (IEC61000-4-2 network) (IEC61000-4-2 network) 001aaa731 Fig 8. ESD clamping test setup and waveforms PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 26 January 2010 8 of 13

PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 7. Application information The PESDxS2UQ series is designed for the protection of up to two unidirectional data lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are below ground. The PESDxS2UQ series provides a surge capability of up to 150W(P ) per line for an 8/20μs waveform. PP line 1 to be protected line 1 to be protected line 2 to be protected PESDxS2UQ PESDxS2UQ ground ground unidirectional protection bidirectional protection of two lines of one line 001aaa730 Fig 9. Typical application: ESD protection of data lines Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient(EFT) and surge transients. The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board(PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 26 January 2010 9 of 13

PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 8. Package outline 1.7 0.6 1.5 0.5 3 0.3 0.1 1.7 1.3 1.5 1.1 1 2 0.33 0.18 0.5 0.23 0.08 1 Dimensions in mm 02-05-21 Fig 10. Package outline PESDxS2UQseries(SOT663) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 4000 8000 PESD3V3S2UQ SOT663 2mm pitch, 8mm tape and reel - -315 PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ PESD3V3S2UQ SOT663 4mm pitch, 8mm tape and reel -115 - PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ [1] For further information and the availability of packing methods, see Section12. PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 26 January 2010 10 of 13

PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESDXS2UQ_SER_4 20100126 Product data sheet - PESDXS2UQ_SER_N_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Section 1.1 “General description”: amended • Section 1.4 “Quick reference data”: amended • Table 2 “Pinning”: updated • Section 7 “Application information”: amended • Figure10: superseded by minimized package outline drawing • Section 9 “Packing information”: added • Section 11 “Legal information”: updated PESDXS2UQ_SER_N_3 20080911 Product data sheet - PESDXS2UQ_SERIES_2 PESDXS2UQ_SERIES_2 20040427 Product specification - PESDXS2UQ_SERIES_1 PESDXS2UQ_SERIES_1 20031215 Product specification - - PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 26 January 2010 11 of 13

PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 11.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications — Applications that are described herein for any of these modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the information included herein and shall have no liability for the consequences of specified use without further testing or modification. use of such information. Limiting values — Stress above one or more limiting values (as defined in Short data sheet — A short data sheet is an extract from a full data sheet the Absolute Maximum Ratings System of IEC60134) may cause permanent with the same product type number(s) and title. A short data sheet is intended damage to the device. Limiting values are stress ratings only and operation of for quick reference only and should not be relied upon to contain detailed and the device at these or any other conditions above those given in the full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability. office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale — NXP Semiconductors products are sold full data sheet shall prevail. subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, 11.3 Disclaimers intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such General — Information in this document is believed to be accurate and terms and conditions, the latter will prevail. reliable. However, NXP Semiconductors does not give any representations or No offer to sell or license — Nothing in this document may be interpreted or warranties, expressed or implied, as to the accuracy or completeness of such construed as an offer to sell products that is open for acceptance or the grant, information and shall have no liability for the consequences of use of such conveyance or implication of any license under any copyrights, patents or information. other industrial or intellectual property rights. Right to make changes — NXP Semiconductors reserves the right to make Export control — This document as well as the item(s) described herein changes to information published in this document, including without may be subject to export control regulations. Export might require a prior limitation specifications and product descriptions, at any time and without authorization from national authorities. notice. This document supersedes and replaces all information supplied prior to the publication hereof. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this Suitability for use — NXP Semiconductors products are not designed, document, and as such is not complete, exhaustive or legally binding. authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected 11.4 Trademarks to result in personal injury, death or severe property or environmental Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 26 January 2010 12 of 13

PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 13. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Application information. . . . . . . . . . . . . . . . . . . 9 8 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 10 9 Packing information . . . . . . . . . . . . . . . . . . . . 10 10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 13 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 26 January 2010 Document identifier: PESDXS2UQ_SER_4