PESD5V0L2UMB SOT883B Low capacitance unidirectional double ESD protection array Rev. 1 — 21 February 2012 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional double ElectroStatic Discharge(ESD) protection array designed to protect up to two signal lines from the damage caused by ESD and other transients. The device is housed in a leadless ultra small SOT883B Surface-Mounted Device(SMD) plastic package. 1.2 Features and benefits  ESD protection of up to two lines  ESD protection up to15kV  Low diode capacitance C =16pF  IEC61000-4-2; level4 (ESD) d  Low clamping voltage V =10V  IEC61000-4-5 (surge); I =2.5A CL PPM  Ultra low leakage current I =5nA  AEC-Q101 qualified RM 1.3 Applications  Computers and peripherals  Portable electronics  Audio and video equipment  SIM card protection  Cellular handsets and accessories  Communication systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff voltage - - 5 V RWM C diode capacitance f=1MHz; V =0V - 16 19 pF d R

PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode 2 cathode 1 3 3 3 common anode 2 Transparent top view 1 2 006aac923 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD5V0L2UMB - leadless ultra small plastic package; 3 solder lands; SOT883B body 1.00.60.37mm 4. Marking Table 4. Marking codes Type number Marking code[1] PESD5V0L2UMB 00011011 [1] For SOT883B binary marking code description, see Figure1. 4.1 Binary marking code description PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. SOT883B binary marking code description PESD5V0L2UMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 21 February 2012 2 of 13

PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode I rated peak pulse current t =8/20s [1][2] - 2.5 A PPM p Per device T junction temperature - 150 C j T ambient temperature 55 +150 C amb T storage temperature 65 +150 C stg [1] Device stressed with ten non-repetitive current pulses (8/20s exponential decay waveform according to IEC61000-4-5 and IEC61643-321). [2] Measured from pin 1or2 to3. T able 6. ESD maximum ratings T =25C unless otherwise specified. amb Symbol Parameter Conditions Min Max Unit Per diode V electrostatic IEC61000-4-2 [1][2] - 15 kV ESD discharge voltage (contactdischarge) machine model [2] - 400 V MIL-STD-883 - 10 kV (humanbody model) [1] Device stressed with ten non-repetitive ESDpulses. [2] Measured from pin 1or2 to3. Table 7. ESD standards compliance Standard Conditions Per diode IEC61000-4-2; level4(ESD) >15kV(air); >8kV(contact) MIL-STD-883; class3B(human body model) >8kV PESD5V0L2UMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 21 February 2012 3 of 13

PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 001aaa631 001aaa630 IPP 120 100 % IPP 100 % IPP; 8 μs 90 % (%) 80 e−t 50 % IPP; 20 μs 40 10 % tr = 0.7 ns to 1 ns t 0 0 10 20 30 40 30 ns t (μs) 60 ns Fig 2. 8/20s pulse waveform according to Fig 3. ESD pulse waveform according to IEC61000-4-5 and IEC61643-321 IEC61000-4-2 6. Characteristics Table 8. Characteristics T =25C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff - - 5 V RWM voltage I reverse leakage current V =5V - 5 25 nA RM RWM V breakdown voltage I =1mA 6.46 6.80 7.14 V BR R C diode capacitance f=1MHz; V =0V - 16 19 pF d R f=1MHz; V =5V - 8 11 pF R V clamping voltage I =1A [1][2] - - 10 V CL PP [1][3] - - 11 V I =2.5A [1][2] - - 13 V PPM [1][3] - - 15 V r dynamic resistance I =10A [4] - 0.9 - dyn R [1] Device stressed with 8/20s exponential decay waveform according to IEC61000-4-5 and IEC61643-321. [2] Measured from pin1or2 to3. [3] Measured from pin1 to 2. [4] Non-repetitive current pulse, Transmission Line Pulse(TLP) t =100ns; square pulse; p ANS/IESDSTM5-1-2008. PESD5V0L2UMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 21 February 2012 4 of 13

PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array I 006aac924 16 Cd (pF) 12 −VCL −VBR −VRWM V 8 −−IIRRM − + 4 P-N 0 −IPP 0 1 2 3 4 VR (V) 5 −IPPM 006aab324 f=1MHz; Tamb=25C Fig 4. Diode capacitance as a function of reverse Fig 5. V-Icharacteristics for a unidirectional voltage; typical values ESDprotection diode PESD5V0L2UMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 21 February 2012 5 of 13

PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array ESD TESTER 4 GHz DIGITAL RG 223/U OSCILLOSCOPE Rd 450 Ω 50 Ω coax 10x ATTENUATOR Cs 50 Ω DUT (DEVICE IEC 61000-4-2 network UNDER Cs = 150 pF; Rd = 330 Ω TEST) vertical scale = 2 kV/div vertical scale = 20 V/div horizontal scale = 10 ns/div horizontal scale = 10 ns/div GND GND unclamped +8 kV ESD pulse waveform clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) (IEC 61000-4-2 network) vertical scale = 2 kV/div vertical scale = 20 V/div horizontal scale = 10 ns/div horizontal scale = 10 ns/div GND GND unclamped -8 kV ESD pulse waveform clamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) (IEC 61000-4-2 network) 006aac926 Fig 6. ESD clamping test setup and waveforms PESD5V0L2UMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 21 February 2012 6 of 13

PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 7. Application information The device is designed for the protection of up to two unidirectional data or signal lines from the damage caused by ESD and surge pulses. The device may be used on lines where the signal polarities are either positive or negative with respect to ground. line 1 to be protected line 1 to be protected line 2 to be protected PESDxL2UMB PESDxL2UMB ground ground unidirectional protection bidirectional protection of two lines of one line 006aac925 Fig 7. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient(EFT) and surge transients. The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. Minimize the path length between the device and the protected line. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board(PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Use ground planes whenever possible. For multilayer PCBs, use ground vias. 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PESD5V0L2UMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 21 February 2012 7 of 13

PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 9. Package outline 0.65 0.55 0.40 0.35 0.34 0.20 0.04 max 0.12 1 2 0.30 0.22 1.05 0.65 0.95 0.30 0.22 3 0.55 0.47 Dimensions in mm 11-11-02 Fig 8. Package outline SOT883B 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 10000 PESD5V0L2UMB SOT883B 2mm pitch, 8mm tape and reel -315 [1] For further information and the availability of packing methods, see Section14. PESD5V0L2UMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 21 February 2012 8 of 13

PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 11. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 0.3 (2x) 0.4 0.4 (2x) solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot883b_fr Reflow soldering is the only recommended soldering method. Fig 9. Reflow soldering footprint SOT883B PESD5V0L2UMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 21 February 2012 9 of 13

PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD5V0L2UMBv.1 20120221 Product data sheet - - PESD5V0L2UMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 21 February 2012 10 of 13

PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 13.2 Definitions Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Draft — The document is a draft version only. The content is still under malfunction of an NXP Semiconductors product can reasonably be expected internal review and subject to formal approval, which may result in to result in personal injury, death or severe property or environmental modifications or additions. NXP Semiconductors does not give any damage. NXP Semiconductors and its suppliers accept no liability for representations or warranties as to the accuracy or completeness of inclusion and/or use of NXP Semiconductors products in such equipment or information included herein and shall have no liability for the consequences of applications and therefore such inclusion and/or use is at the customer’s own use of such information. risk. Short data sheet — A short data sheet is an extract from a full data sheet Applications — Applications that are described herein for any of these with the same product type number(s) and title. A short data sheet is intended products are for illustrative purposes only. NXP Semiconductors makes no for quick reference only and should not be relied upon to contain detailed and representation or warranty that such applications will be suitable for the full information. For detailed and full information see the relevant full data specified use without further testing or modification. sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the Customers are responsible for the design and operation of their applications full data sheet shall prevail. and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product Product specification — The information and data provided in a Product design. It is customer’s sole responsibility to determine whether the NXP data sheet shall define the specification of the product as agreed between Semiconductors product is suitable and fit for the customer’s applications and NXP Semiconductors and its customer, unless NXP Semiconductors and products planned, as well as for the planned application and use of customer have explicitly agreed otherwise in writing. In no event however, customer’s third party customer(s). Customers should provide appropriate shall an agreement be valid in which the NXP Semiconductors product is design and operating safeguards to minimize the risks associated with their deemed to offer functions and qualities beyond those described in the applications and products. Product data sheet. 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NXP Semiconductors takes no Limiting values — Stress above one or more limiting values (as defined in responsibility for the content in this document if provided by an information the Absolute Maximum Ratings System of IEC60134) will cause permanent source outside of NXP Semiconductors. damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in In no event shall NXP Semiconductors be liable for any indirect, incidental, the Recommended operating conditions section (if present) or the punitive, special or consequential damages (including - without limitation - lost Characteristics sections of this document is not warranted. Constant or profits, lost savings, business interruption, costs related to the removal or repeated exposure to limiting values will permanently and irreversibly affect replacement of any products or rework charges) whether or not such the quality and reliability of the device. damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards sale, as published at http://www.nxp.com/profile/terms, unless otherwise customer for the products described herein shall be limited in accordance agreed in a valid written individual agreement. In case an individual with the Terms and conditions of commercial sale of NXP Semiconductors. agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to Right to make changes — NXP Semiconductors reserves the right to make applying the customer’s general terms and conditions with regard to the changes to information published in this document, including without purchase of NXP Semiconductors products by customer. limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior No offer to sell or license — Nothing in this document may be interpreted or to the publication hereof. construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. PESD5V0L2UMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 21 February 2012 11 of 13

PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array Export control — This document as well as the item(s) described herein 13.4 Trademarks may be subject to export control regulations. Export might require a prior authorization from competent authorities. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PESD5V0L2UMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 21 February 2012 12 of 13

PESD5V0L2UMB NXP Semiconductors Low capacitance unidirectional double ESD protection array 15. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4.1 Binary marking code description. . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Application information. . . . . . . . . . . . . . . . . . . 7 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . 8 10 Packing information . . . . . . . . . . . . . . . . . . . . . 8 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 14 Contact information. . . . . . . . . . . . . . . . . . . . . 12 15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 February 2012 Document identifier: PESD5V0L2UMB