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DISCRETE SEMICONDUCTORS DATA SHEET PESDxS2UAT series Double ESD protection diodes in SOT23 package Product data sheet 2004 Feb 18

NXP Semiconductors Product data sheet Double ESD protection diodes PESDxS2UAT series in SOT23 package FEATURES QUICK REFERENCE DATA • Unidirectional ESD protection of up to two lines SYMBOL PARAMETER VALUE UNIT • Common-cathode configuration V reverse stand-off 3.3, 5, 12, 15 V RWM • Max. peak pulse power: P = 330 W at t = 8/20 µs voltage and 24 pp p • Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A Cd diode capacitance 207, 152, 38, 32 pF V = 0 V; and 23 • Ultra-low reverse leakage current: I < 700 nA R RM f = 1 MHz • ESD protection > 30 kV number of 2 • IEC 61000-4-2; level 4 (ESD) protected lines • IEC 61000-4-5 (surge); I = 18 A at t = 8/20 µs. pp p PINNING APPLICATIONS PIN DESCRIPTION • Computers and peripherals 1 anode 1 • Communication systems 2 anode 2 • Audio and video equipment 3 common cathode • Data lines • CAN bus protection. DESCRIPTION Unidirectional double ESD protection diodes in common cathode configuration in the SOT23 plastic package. 1 Designed to protect up to two transmission or data lines against damage from ElectroStatic Discharge (ESD) and 3 1 other transients. 3 2 2 MARKING TYPE NUMBER MARKING CODE(1) 001aaa401 sym002 PESD3V3S2UAT *7A PESD5V0S2UAT *7B PESD12VS2UAT *7C PESD15VS2UAT *7D Fig.1 Simplified outline (SOT23) and symbol. PESD24VS2UAT *7E Note 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. 2004 Feb 18 2

NXP Semiconductors Product data sheet Double ESD protection diodes PESDxS2UAT series in SOT23 package ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PESD3V3S2UAT − plastic surface mounted package; 3 leads SOT23 PESD5V0S2UAT PESD12VS2UAT PESD15VS2UAT PESD24VS2UAT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT P peak pulse power 8/20 µs pulse; notes 1 and 2 pp PESD3V3S2UAT − 330 W PESD5V0S2UAT − 260 W PESD12VS2UAT − 180 W PESD15VS2UAT − 160 W PESD24VS2UAT − 160 W I peak pulse current 8/20 µs pulse; notes 1 and 2 pp PESD3V3S2UAT − 18 A PESD5V0S2UAT − 15 A PESD12VS2UAT − 5 A PESD15VS2UAT − 5 A PESD24VS2UAT − 3 A T junction temperature − 150 °C j T operating ambient temperature −65 +150 °C amb T storage temperature −65 +150 °C stg Notes 1. Non-repetitive current pulse 8/20µ µs exponential decay waveform; see Fig.2. 2. Measured across either pins 1 and 3 or pins 2 and 3. 2004 Feb 18 3

NXP Semiconductors Product data sheet Double ESD protection diodes PESDxS2UAT series in SOT23 package ESD maximum ratings SYMBOL PARAMETER CONDITIONS VALUE UNIT ESD electrostatic discharge IEC 61000-4-2 (contact discharge); notes 1 and 2 PESD3V3S2UAT 30 kV PESD5V0S2UAT 30 kV PESD12VS2UAT 30 kV PESD15VS2UAT 30 kV PESD24VS2UAT 23 kV HBM MIL-Std 883 PESDxS2UAT-series 10 kV Notes 1. Device stressed with ten non-repetitive ESD pulses; see Fig.3. 2. Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7. ESD standards compliance ESD STANDARD CONDITIONS IEC 61000-4-2; level 4 (ESD); see Fig.3 > 15 kV (air); > 8 kV (contact) HBM MIL-Std 883; class 3 > 4 kV 001aaa191 120 MLE218 Ipp handbook, halfpage 100 % Ipp 100 % Ipp; 8 µs 90 % (%) 80 e−t 50 % Ipp; 20 µs 40 10 % 0 tr = 0.7 to 1 ns t 0 10 20 30 40 t (µs) 30 ns 60 ns Fig.2 8/20 µs pulse waveform according to Fig.3 ElectroStatic Discharge (ESD) pulse IEC 61000-4-5. waveform according to IEC 61000-4-2. 2004 Feb 18 4

NXP Semiconductors Product data sheet Double ESD protection diodes PESDxS2UAT series in SOT23 package ELECTRICAL CHARACTERISTICS T = 25 °C; unless otherwise specified. j SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V reverse stand-off voltage RWM PESD3V3S2UAT − − 3.3 V PESD5V0S2UAT − − 5 V PESD12VS2UAT − − 12 V PESD15VS2UAT − − 15 V PESD24VS2UAT − − 24 V I reverse leakage current RM PESD3V3S2UAT V = 3.3 V − 0.7 2 µA RWM PESD5V0S2UAT V = 5 V − 0.1 1 µA RWM PESD12VS2UAT V = 12 V − <1 50 nA RWM PESD15VS2UAT V = 15 V − <1 50 nA RWM PESD24VS2UAT V = 24 V − <1 50 nA RWM V breakdown voltage I = 5 mA BR Z PESD3V3S2UAT 5.2 5.6 6.0 V PESD5V0S2UAT 6.4 6.8 7.2 V PESD12VS2UAT 14.7 15.0 15.3 V PESD15VS2UAT 17.6 18.0 18.4 V PESD24VS2UAT 26.5 27.0 27.5 V C diode capacitance f = 1 MHz; V = 0 V d R PESD3V3S2UAT − 207 300 pF PESD5V0S2UAT − 152 200 pF PESD12VS2UAT − 38 75 pF PESD15VS2UAT − 32 70 pF PESD24VS2UAT − 23 50 pF V clamping voltage notes 1 and 2 (CL)R PESD3V3S2UAT I = 1 A − − 7 V pp I = 18 A − − 20 V pp PESD5V0S2UAT I = 1 A − − 9 V pp I = 15 A − − 20 V pp PESD12VS2UAT I = 1 A − − 19 V pp I = 5 A − − 35 V pp PESD15VS2UAT I = 1 A − − 23 V pp I = 5 A − − 40 V pp PESD24VS2UAT I = 1 A − − 36 V pp I = 3 A − − 70 V pp 2004 Feb 18 5

NXP Semiconductors Product data sheet Double ESD protection diodes PESDxS2UAT series in SOT23 package SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R differential resistance diff PESD3V3S2UAT I = 1 mA − − 400 Ω R PESD5V0S2UAT I = 1 mA − − 80 Ω R PESD12VS2UAT I = 1 mA − − 200 Ω R PESD15VS2UAT I = 1 mA − − 225 Ω R PESD24VS2UAT I = 0.5 mA − − 300 Ω R Notes 1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2. 2. Measured either across pins 1 and 3 or pins 2 and 3. GRAPHICAL DATA 104 001aaa147 1.2 001aaa193 Ppp PPP (W) PPP(25°C) 103 0.8 (1) 102 0.4 (2) 10 0 1 10 102 103 104 0 50 100 150 200 tp (µs) Tj (°C) (1) PESD3V3S2UAT and PESD5V0S2UAT. (2) PESD12VS2UAT, PESD15VS2UAT, PESD24VS2UAT Tamb = 25 °C. tp = 8/20 µs exponential decay waveform; see Fig.2. Fig.5 Relative variation of peak pulse power as a Fig.4 Peak pulse power dissipation as a function function of junction temperature; typical of pulse time; typical values. values. 2004 Feb 18 6

NXP Semiconductors Product data sheet Double ESD protection diodes PESDxS2UAT series in SOT23 package 240 001aaa148 50 001aaa149 Cd Cd (pF) (pF) 200 40 160 (1) 30 120 (2) 20 (1) (2) 80 10 (3) 40 0 0 1 2 3 4 5 0 5 10 15 20 25 VR (V) VR (V) (1) PESD3V3S2UAT; VRWM = 3.3 V. (1) PESD12VS2UAT; VRWM = 12 V. (2) PESD5V0S2UAT; VRWM = 5 V. (2) PESD15VS2UAT; VRWM = 15 V. (3) PESD24VS2UAT; VRWM = 24 V. Tamb = 25 °C; f = 1 MHz. Tamb = 25 °C; f = 1 MHz. Fig.6 Diode capacitance as a function of reverse Fig.7 Diode capacitance as a function of reverse voltage; typical values. voltage; typical values. 2004 Feb 18 7

NXP Semiconductors Product data sheet Double ESD protection diodes PESDxS2UAT series in SOT23 package 001aaa270 10 IR IR(25˚C) (1) 1 10−1 −100 −50 0 50 100 150 Tj (°C) (1) PESD3V3S2UAT; VRWM = 3.3 V. PESD5V0S2UAT; VRWM = 5 V. IR is less than 10 nA at 150 °C for: PESD12V52UAT; VRWM = 12 V. PESD15VS2UAT; VRWM = 15 V. PESD24VS2UAT; VRWM = 24 V. Fig.8 Relative variation of reverse leakage current as a function of junction temperature; typical values. 2004 Feb 18 8

NXP Semiconductors Product data sheet Double ESD protection diodes PESDxS2UAT series in SOT23 package ESD TESTER RG 223/U 4 GHz DIGITAL RZ 450 Ω 50 Ω coax 10× OSCILLOSCOPE ATTENUATOR CZ 50 Ω note 1 Note 1: IEC61000-4-2 network CZ = 150 pF; RZ = 330 Ω D.U.T.: PESDxS2UAT vertical scale = 200 V/div vertical scale = 20 V/div horizontal scale = 50 ns/div horizontal scale = 50 ns/div PESD24VS2UAT GND PESD15VS2UAT GND PESD12VS2UAT GND GND PESD5V0S2L GND GND PESD3V3S2UAT unclamped +1 kV ESD voltage waveform clamped +1 kV ESD voltage waveform (IEC61000-4-2 network) (IEC61000-4-2 network) GND GND vertical scale = 200 V/div vertical scale = 10 V/div horizontal scale = 50 ns/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform clamped −1 kV ESD voltage waveform (IEC61000-4-2 network) (IEC61000-4-2 network) 001aaa151 Fig.9 ESD clamping test set-up and waveforms. 2004 Feb 18 9

NXP Semiconductors Product data sheet Double ESD protection diodes PESDxS2UAT series in SOT23 package APPLICATION INFORMATION The PESDxS2UAT series can protect up to two lines against damage caused by unidirectional ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UAT series can protect lines whose signal polarities are below ground. PESDxS2UAT series provide a surge capability of up to 330 Watts peak pulse power per line for a 8/20 µs waveform. line 1 to be protected line 1 to be protected line 2 to be protected PESDxS2UAT PESDxS2UAT ground ground unidirectional protection bidirectional protection of two lines of one line 001aaa179 Fig.10 Typical application: ESD protection of data lines. Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESDxS2UAT as close as possible to the input terminal or connector. 2. Minimize the path length between the PESDxS2UAT and the protected line. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all printed-circuit board conductive loops including power and ground loops. 6. Minimize the length of transient return paths to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. 9. Use vias for multi-layer printed-circuit boards. 2004 Feb 18 10

NXP Semiconductors Product data sheet Double ESD protection diodes PESDxS2UAT series in SOT23 package PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D B E A X HE v M A 3 Q A A1 1 2 c e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x. bp c D E e e1 HE Lp Q v w 1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55 mm 0.1 1.9 0.95 0.2 0.1 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-11-04 SOT23 TO-236AB 06-03-16 2004 Feb 18 11

NXP Semiconductors Product data sheet Double ESD protection diodes PESDxS2UAT series in SOT23 package DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Feb 18 12

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/01/pp13 Date of release: 2004 Feb 18 Document order number: 9397 750 12247