图片仅供参考

详细数据请看参考数据手册

Datasheet下载
  • 型号: PEMX1,115
  • 制造商: NXP Semiconductors
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

查看当月历史价格

查看今年历史价格

PEMX1,115产品简介:

ICGOO电子元器件商城为您提供PEMX1,115由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 PEMX1,115价格参考。NXP SemiconductorsPEMX1,115封装/规格:晶体管 - 双极 (BJT) - 阵列, Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 100mA 100MHz 300mW Surface Mount SOT-666。您可以下载PEMX1,115参考资料、Datasheet数据手册功能说明书,资料中有PEMX1,115 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANS DUAL NPN 40V 100MA SOT666两极晶体管 - BJT TRANS DOUBLE TAPE-7

产品分类

晶体管(BJT) - 阵列分离式半导体

品牌

NXP Semiconductors

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,两极晶体管 - BJT,NXP Semiconductors PEMX1,115-

数据手册

点击此处下载产品Datasheet

产品型号

PEMX1,115

不同 Ib、Ic时的 Vce饱和值(最大值)

200mV @ 5mA,50mA

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

120 @ 1mA,6V

产品种类

两极晶体管 - BJT

供应商器件封装

SOT-666

其它名称

568-11269-6

功率-最大值

300mW

包装

Digi-Reel®

发射极-基极电压VEBO

5 V

商标

NXP Semiconductors

增益带宽产品fT

100 MHz

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

SOT-563,SOT-666

封装/箱体

SOT-666

工厂包装数量

4000

晶体管极性

NPN

晶体管类型

2 NPN(双)

最大功率耗散

200 mW

最大工作温度

+ 150 C

最大直流电集电极电流

200 mA

最小工作温度

- 65 C

标准包装

1

电压-集射极击穿(最大值)

40V

电流-集电极(Ic)(最大值)

100mA

电流-集电极截止(最大值)

100nA(ICBO)

直流电流增益hFE最大值

120 at 1 mA at 6 V

直流集电极/BaseGainhfeMin

120

配置

Dual

集电极—发射极最大电压VCEO

40 V

集电极—基极电压VCBO

50 V

集电极连续电流

100 mA

零件号别名

PEMX1 T/R

频率-跃迁

100MHz

推荐商品

型号:SMBT3904PNH6327XTSA1

品牌:Infineon Technologies

产品名称:分立半导体产品

获取报价

型号:MMDT2227-7-F

品牌:Diodes Incorporated

产品名称:分立半导体产品

获取报价

型号:PMBT3906YS,115

品牌:Nexperia USA Inc.

产品名称:分立半导体产品

获取报价

型号:ZXTD619MCTA

品牌:Diodes Incorporated

产品名称:分立半导体产品

获取报价

型号:CPH6531-TL-E

品牌:ON Semiconductor

产品名称:分立半导体产品

获取报价

型号:STD815CP40

品牌:STMicroelectronics

产品名称:分立半导体产品

获取报价

型号:BC846UPNE6327HTSA1

品牌:Infineon Technologies

产品名称:分立半导体产品

获取报价

型号:HN1C01FU-Y(T5L,F,T

品牌:Toshiba Semiconductor and Storage

产品名称:分立半导体产品

获取报价

样品试用

万种样品免费试用

去申请
PEMX1,115 相关产品

BC847CDXV6T1G

品牌:ON Semiconductor

价格:¥0.43-¥0.43

ULN2803A

品牌:STMicroelectronics

价格:

ZXT12N50DXTA

品牌:Diodes Incorporated

价格:

PBSS4350SSJ

品牌:Nexperia USA Inc.

价格:¥1.38-¥1.38

UMX2NTR

品牌:Rohm Semiconductor

价格:

CMLT5088E TR

品牌:Central Semiconductor Corp

价格:

MC1413DG

品牌:ON Semiconductor

价格:¥询价-¥询价

CA3083Z

品牌:Renesas Electronics America Inc.

价格:

PDF Datasheet 数据手册内容提取

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMX1 NPN general purpose double transistor Product data sheet 2001 Nov 07 Supersedes data of 2001 Aug 30

NXP Semiconductors Product data sheet NPN general purpose double transistor PEMX1 FEATURES PINNING • 300 mW total power dissipation PIN DESCRIPTION • Very small 1.6 mm x 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 • Excellent coplanarity due to straight leads 2, 5 base TR1; TR2 • Replaces two SC-75/SC-89 packaged transistors on 6, 3 collector TR1; TR2 same PCB area • Reduced required PCB area • Reduced pick and place costs. handbook, halfpag6e 5 4 APPLICATIONS 6 5 4 • General purpose switching and amplification. TR2 TR1 DESCRIPTION NPN double transistor pair in a SOT666 plastic package. 1 2 3 1 2 3 PNP complement: PEMT1. MAM447 Top view MARKING TYPE NUMBER MARKING CODE Fig.1 Simplified outline (SOT666) and symbol. PEMX1 ZZ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor V collector-base voltage open emitter − 50 V CBO V collector-emitter voltage open base − 40 V CEO V emitter-base voltage open collector − 5 V EBO I collector current (DC) − 100 mA C I peak collector current − 200 mA CM I peak base current − 200 mA BM P total power dissipation T ≤ 25 °C; note 1 − 200 mW tot amb T storage temperature −65 +150 °C stg T junction temperature − 150 °C j T operating ambient temperature −65 +150 °C amb Per device P total power dissipation T ≤ 25 °C; note 1 − 300 mW tot amb Note 1. Transistor mounted on an FR4 printed-circuit board. 2001 Nov 07 2

NXP Semiconductors Product data sheet NPN general purpose double transistor PEMX1 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient notes 1 and 2 416 K/W th j-a Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering is reflow soldering. CHARACTERISTICS T = 25 °C unless otherwise specified. amb SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor I collector-base cut-off current V = 30 V; I = 0 − 100 nA CBO CB E V = 30 V; I = 0; T = 150 °C − 10 μA CB E j I emitter-base cut-off current V = 4 V; I = 0 − 100 nA EBO EB C h DC current gain V = 6 V; I = 1 mA 120 − FE CE C V collector-emitter saturation I = 50 mA; I = 5 mA; note 1 − 200 mV CEsat C B voltage C collector capacitance V = 12 V; I = I = 0; f = 1MHz − 1.5 pF c CB E e f transition frequency I = 2 mA; V = 12 V; f = 100 MHz 100 − MHz T C CE Note 1. Pulse test: t ≤ 300 μs; δ ≤ 0.02. p 2001 Nov 07 3

NXP Semiconductors Product data sheet NPN general purpose double transistor PEMX1 MGU430 300 handbook, full pagewidth hFE 200 100 0 10−1 1 10 102 103 IC mA Fig.2 DC current gain as a function of collector current; typical values. 2001 Nov 07 4

NXP Semiconductors Product data sheet NPN general purpose double transistor PEMX1 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D A E X S Y S HE 6 5 4 pin 1 index A 1 2 3 c e1 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y 0.6 0.27 0.18 1.7 1.3 1.7 0.3 mm 1.0 0.5 0.1 0.1 0.5 0.17 0.08 1.5 1.1 1.5 0.1 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION 01-01-04 SOT666 01-08-27 2001 Nov 07 5

NXP Semiconductors Product data sheet NPN general purpose double transistor PEMX1 DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2001 Nov 07 6

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp7 Date of release: 2001 Nov 07 Document order number: 9397 750 09052