Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

PDTD113ZT NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW , R2 = 10 kW Rev. 02 — 23 March 2009 Product data sheet 1. Product profile 1.1 General description NPN 500 mAResistor-Equipped Transistor(RET) in a small Surface-Mounted Device(SMD) plastic package. PNPcomplement: PDTB113ZT. 1.2 Features n Built-in bias resistors n Reduces component count n Simplifies circuit design n Reduces pick and place costs n 500mA output current capability n – 10% resistor ratio tolerance 1.3 Applications n Digital application in automotive and n Cost-savingalternativeforBC817series industrial segments in digital applications n Controlling ICinputs n Switching loads 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 50 V CEO I output current - - 500 mA O R1 bias resistor1(input) 0.7 1 1.3 kW R2/R1 bias resistor ratio 9 10 11

PDTD113ZT NXP Semiconductors NPN 500 mA resistor-equipped transistor; R1 = 1 kW , R2 = 10 kW 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 input (base) 3 2 GND (emitter) 3 R1 3 output (collector) 1 1 2 R2 2 sym007 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PDTD113ZT - plastic surface-mounted package; 3leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PDTD113ZT *7V [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 5 V EBO V input voltage I positive - +10 V negative - - 5 V I output current - 500 mA O PDTD113ZT_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 23 March 2009 2 of 9

PDTD113ZT NXP Semiconductors NPN 500 mA resistor-equipped transistor; R1 = 1 kW , R2 = 10 kW Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit P total power dissipation T £ 25(cid:176) C [1] - 250 mW tot amb T junction temperature - 150 (cid:176) C j T ambient temperature - 65 +150 (cid:176) C amb T storage temperature - 65 +150 (cid:176) C stg [1] Device mounted on an FR4Printed-Circuit Board(PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air [1] - - 500 K/W th(j-a) junction to ambient [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 7. Characteristics T =25(cid:176) C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit I collector-base cut-off V =40V; I =0A - - 100 nA CBO CB E current V =50V; I =0A - - 100 nA CB E I collector-emittercut-off V =50V; I =0A - - 0.5 m A CEO CE B current I emitter-base cut-off V =5V; I =0A - - 0.8 mA EBO EB C current h DCcurrent gain V =5V; I =50mA 70 - - FE CE C V collector-emitter I =50mA; I =2.5mA - - 0.3 V CEsat C B saturation voltage V off-state input voltage V =5V; I =100m A 0.3 0.6 1 V I(off) CE C V on-state input voltage V =0.3V; I =20mA 0.4 0.8 1.4 V I(on) CE C R1 bias resistor1(input) 0.7 1 1.3 kW R2/R1 bias resistor ratio 9 10 11 C collector capacitance V =10V; I =i =0A; - 7 - pF c CB E e f=100MHz PDTD113ZT_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 23 March 2009 3 of 9

PDTD113ZT NXP Semiconductors NPN 500 mA resistor-equipped transistor; R1 = 1 kW , R2 = 10 kW 103 006aaa314 10- 1 006aaa315 (1) (1) hFE (2) (2) (3) VCEsat (3) (V) 102 10 1 10- 2 10- 1 1 10 102 103 1 10 102 103 IC (mA) IC (mA) V =5V I /I =20 CE C B (1) T =100(cid:176) C (1) T =100(cid:176) C amb amb (2) T =25(cid:176) C (2) T =25(cid:176) C amb amb (3) T =- 40(cid:176) C (3) T =- 40(cid:176) C amb amb Fig 1. DCcurrent gain as a function of collector Fig 2. Collector-emitter saturation voltage as a current; typical values function of collector current; typical values 006aaa316 006aaa317 10 1 (1) (2) VI(on) VI(off) (V) (V) (3) 1 (1) (2) (3) 10- 1 10- 1 10- 1 1 10 102 103 10- 1 1 10 IC (mA) IC (mA) V =0.3V V =5V CE CE (1) T =- 40(cid:176) C (1) T =- 40(cid:176) C amb amb (2) T =25(cid:176) C (2) T =25(cid:176) C amb amb (3) T =100(cid:176) C (3) T =100(cid:176) C amb amb Fig 3. On-state input voltage as a function of Fig 4. Off-state input voltage as a function of collector current; typical values collector current; typical values PDTD113ZT_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 23 March 2009 4 of 9

PDTD113ZT NXP Semiconductors NPN 500 mA resistor-equipped transistor; R1 = 1 kW , R2 = 10 kW 8. Package outline 3.0 1.1 2.8 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 0.48 0.15 0.38 0.09 1.9 Dimensions in mm 04-11-04 Fig 5. Package outline SOT23(TO-236AB) 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 PDTD113ZT SOT23 4mm pitch, 8mm tape and reel -215 -235 [1] For further information and the availability of packing methods, seeSection13. PDTD113ZT_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 23 March 2009 5 of 9

PDTD113ZT NXP Semiconductors NPN 500 mA resistor-equipped transistor; R1 = 1 kW , R2 = 10 kW 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 1.7 2 solder paste 0.7 0.6 occupied area (3· ) (3· ) Dimensions in mm 0.5 (3· ) 0.6 (3· ) 1 sot023_fr Fig 6. Reflow soldering footprint SOT23(TO-236AB) 2.2 1.2 (2· ) 1.4 (2· ) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 7. Wave soldering footprint SOT23(TO-236AB) PDTD113ZT_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 23 March 2009 6 of 9

PDTD113ZT NXP Semiconductors NPN 500 mA resistor-equipped transistor; R1 = 1 kW , R2 = 10 kW 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PDTD113ZT_2 20090323 Product data sheet - PDTD113Z_SER_1 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type numbers PDTD113ZK and PDTD113ZS removed • Table 5 “Limiting values”: typo for maximum value of V positive corrected I • Section 10 “Soldering”: added • Section 12 “Legal information”: updated PDTD113Z_SER_1 20050405 Product data sheet - - PDTD113ZT_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 23 March 2009 7 of 9

PDTD113ZT NXP Semiconductors NPN 500 mA resistor-equipped transistor; R1 = 1 kW , R2 = 10 kW 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. 12.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications —Applications that are described herein for any of these modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the informationincludedhereinandshallhavenoliabilityfortheconsequencesof specified use without further testing or modification. use of such information. Limiting values —Stress above one or more limiting values (as defined in Short data sheet —A short data sheet is an extract from a full data sheet theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand the device at these or any other conditions above those given in the full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability. office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale —NXP Semiconductors products are sold full data sheet shall prevail. subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, 12.3 Disclaimers intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such General —Information in this document is believed to be accurate and terms and conditions, the latter will prevail. reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor No offer to sell or license —Nothing in this document may be interpreted warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch or construed as an offer to sell products that is open for acceptance or the information and shall have no liability for the consequences of use of such grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents information. or other industrial or intellectual property rights. Right to make changes —NXPSemiconductorsreservestherighttomake Quick reference data —The Quick reference data is an extract of the changes to information published in this document, including without product data given in the Limiting values and Characteristics sections of this limitation specifications and product descriptions, at any time and without document, and as such is not complete, exhaustive or legally binding. notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. Export control —This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior Suitability for use —NXP Semiconductors products are not designed, authorization from national authorities. authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected 12.4 Trademarks to result in personal injury, death or severe property or environmental Notice:Allreferencedbrands,productnames,servicenamesandtrademarks are the property of their respective owners. 13. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com PDTD113ZT_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 23 March 2009 8 of 9

PDTD113ZT NXP Semiconductors NPN 500 mA resistor-equipped transistor; R1 = 1 kW , R2 = 10 kW 14. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 5 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 13 Contact information. . . . . . . . . . . . . . . . . . . . . . 8 14 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 23 March 2009 Document identifier: PDTD113ZT_2