Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

PDTC123J series NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k Rev. 7 — 21 December 2011 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device(SMD) plastic packages. Table 1. Product overview Type number Package PNP Package complement configuration NXP JEITA JEDEC PDTC123JE SOT416 SC-75 - PDTA123JE ultra small PDTC123JM SOT883 SC-101 - PDTA123JM leadless ultra small PDTC123JT SOT23 - TO-236AB PDTA123JT small PDTC123JU SOT323 SC-70 - PDTA123JU very small 1.2 Features and benefits  100 mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  AEC-Q101 qualified 1.3 Applications  Digital application in automotive and  Cost-saving alternative for BC847/857 industrial segments series in digital applications  Control of IC inputs  Switching loads 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 50 V CEO I output current - - 100 mA O R1 bias resistor1 (input) 1.54 2.20 2.86 k R2/R1 bias resistor ratio 17 21 26

PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol SOT23; SOT323; SOT416 1 input (base) 2 GND (emitter) 3 3 R1 3 output (collector) 1 R2 1 2 2 006aaa144 sym007 SOT883 1 input (base) 2 GND (emitter) 1 3 3 R1 3 output (collector) 2 1 Transparent top view R2 2 sym007 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PDTC123JE SC-75 plastic surface-mounted package; 3leads SOT416 PDTC123JM SC-101 leadless ultra small plastic package; 3solder lands; SOT883 body 1.00.60.5mm PDTC123JT - plastic surface-mounted package; 3leads SOT23 PDTC123JU SC-70 plastic surface-mounted package; 3leads SOT323 4. Marking Table 5. Marking codes Type number Marking code[1] PDTC123JE 28 PDTC123JM DW PDTC123JT *25 PDTC123JU *49 [1] * = placeholder for manufacturing site code. PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 7 — 21 December 2011 2 of 17

PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 10 V EBO V input voltage I positive - +12 V negative - 5 V I output current - 100 mA O I peak collector current single pulse; t 1ms - 100 mA CM p P total power dissipation T 25C tot amb PDTC123JE(SOT416) [1][2] - 150 mW PDTC123JM(SOT883) [2][3] - 250 mW PDTC123JT(SOT23) [1] - 250 mW PDTC123JU(SOT323) [1] - 200 mW T junction temperature - 150 C j T ambient temperature 65 +150 C amb T storage temperature 65 +150 C stg [1] Device mounted on an FR4Printed-Circuit Board(PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4PCB with 70m copper strip line, standard footprint. PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 7 — 21 December 2011 3 of 17

PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 006aac778 300 Ptot (1) (mW) (2) 200 (3) 100 0 -75 -25 25 75 125 175 Tamb (°C) (1) SOT23; FR4 PCB, standard footprint SOT883; FR4 PCB with 70m copper strip line, standard footprint (2) SOT323; FR4 PCB, standard footprint (3) SOT416; FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from junction in free air th(j-a) to ambient PDTC123JE(SOT416) [1][2] - - 830 K/W PDTC123JM(SOT883) [2][3] - - 500 K/W PDTC123JT(SOT23) [1] - - 500 K/W PDTC123JU(SOT323) [1] - - 625 K/W [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4PCB with 70m copper strip line, standard footprint. PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 7 — 21 December 2011 4 of 17

PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 103 006aac781 duty cycle = 1 Zth(j-a) 0.75 (K/W) 0.5 0.33 102 0.2 0.1 0.05 0.02 0.01 10 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for PDTC123JE(SOT416); typical values 103 006aac782 Zth(j-a) duty cycle = 1 (K/W) 0.75 0.5 102 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4PCB, 70m copper strip line Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for PDTC123JM(SOT883); typical values PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 7 — 21 December 2011 5 of 17

PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 103 006aac779 duty cycle = 1 Zth(j-a) 0.75 (K/W) 0.5 0.33 102 0.2 0.1 0.05 0.02 0.01 10 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for PDTC123JT(SOT23); typical values 103 006aac780 duty cycle = 1 Zth(j-a) 0.75 (K/W) 0.5 0.33 102 0.2 0.1 0.05 0.02 0.01 10 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4PCB, standard footprint Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for PDTC123JU(SOT323); typical values PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 7 — 21 December 2011 6 of 17

PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 7. Characteristics Table 8. Characteristics T =25C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit I collector-base V =50V; I =0A - - 100 nA CBO CB E cut-offcurrent I collector-emitter V =30V; I =0A - - 1 A CEO CE B cut-off current V =30V; I =0A; - - 5 A CE B T =150C j I emitter-base V =5V; I =0A - - 180 A EBO EB C cut-offcurrent h DCcurrent gain V =5V; I =10mA 100 - - FE CE C V collector-emitter I =5mA; I =0.25mA - - 100 mV CEsat C B saturation voltage V off-state input V =5V; I =100A - 0.6 0.5 V I(off) CE C voltage V on-state input V =0.3V; I =5mA 1.1 0.75 - V I(on) CE C voltage R1 bias resistor1 (input) 1.54 2.20 2.86 k R2/R1 bias resistor ratio 17 21 26 C collector capacitance V =10V; I =i =0A; - - 2.5 pF c CB E e f=1MHz f transition frequency V =5V; I =10mA; [1] - 230 - MHz T CE C f=100MHz [1] Characteristics of built-in transistor. PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 7 — 21 December 2011 7 of 17

PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 103 006aac805 1 006aac810 hFE (1) (2) VCEsat (V) (3) 102 10-1 (1) (2) 10 (3) 1 10-2 10-1 1 10 102 10-1 1 10 102 IC (mA) IC (mA) V =5V I /I =20 CE C B (1) Tamb=100C (1) Tamb=100C (2) Tamb=25C (2) Tamb=25C (3) Tamb=40C (3) Tamb=40C Fig 6. DC current gain as a function of collector Fig 7. Collector-emitter saturation voltage as a current; typical values function of collector current; typical values 006aac811 006aac812 10 1 (1) (2) VI(on) VI(off) (V) (V) (3) 1 (1) (2) (3) 10-1 10-1 10-1 1 10 102 10-1 1 10 IC (mA) IC (mA) V =0.3V V =5V CE CE (1) Tamb=40C (1) Tamb=40C (2) Tamb=25C (2) Tamb=25C (3) Tamb=100C (3) Tamb=100C Fig 8. On-state input voltage as a function of Fig 9. Off-state input voltage as a function of collector current; typical values collector current; typical values PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 7 — 21 December 2011 8 of 17

PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 3 006aac813 103 006aac757 Cc (pF) fT (MHz) 2 102 1 0 10 0 10 20 30 40 50 10-1 1 10 102 VCB (V) IC (mA) f=1MHz; Tamb=25C VCE=5V; Tamb=25C Fig 10. Collector capacitance as a function of Fig 11. Transition frequency as a function of collector collector-base voltage; typical values current; typical values of built-in transistor 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 7 — 21 December 2011 9 of 17

PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 9. Package outline 1.8 0.95 0.62 1.4 0.60 0.55 0.55 0.50 0.47 0.46 3 0.45 0.15 0.30 3 0.22 1.75 0.9 1.45 0.7 0.65 1.02 0.95 0.30 0.22 2 1 1 2 0.30 0.25 0.15 0.10 0.20 1 0.12 0.35 Dimensions in mm 04-11-04 Dimensions in mm 03-04-03 Fig 12. Package outline PDTC123JE(SOT416/SC-75) Fig 13. Package outline PDTC123JM(SOT883/SC-101) 3.0 1.1 2.2 1.1 2.8 0.9 1.8 0.8 3 3 0.45 0.15 0.45 0.15 2.5 1.4 2.2 1.35 2.1 1.2 2.0 1.15 1 2 1 2 0.48 0.15 0.4 0.25 0.38 0.09 0.3 0.10 1.9 1.3 Dimensions in mm 04-11-04 Dimensions in mm 04-11-04 Fig 14. Package outline PDTC123JT(SOT23) Fig 15. Package outline PDTC123JU(SOT323/SC-70) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 PDTC123JE SOT416 4mm pitch, 8mm tape and reel -115 -135 PDTC123JM SOT883 2mm pitch, 8mm tape and reel - -315 PDTC123JT SOT23 4mm pitch, 8mm tape and reel -215 -235 PDTC123JU SOT323 4mm pitch, 8mm tape and reel -115 -135 [1] For further information and the availability of packing methods, see Section14. PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 7 — 21 December 2011 10 of 17

PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 11. Soldering 2.2 1.7 solder lands solder resist 0.85 1 2 solder paste 0.5 (3×) occupied area Dimensions in mm 0.6 (3×) 1.3 sot416_fr Reflow soldering is the only recommended soldering method. Fig 16. Reflow soldering footprint PDTC123JE(SOT416/SC-75) 1.3 0.7 R0.05 (12×) solder lands solder resist 0.9 0.6 0.7 0.25 solder paste (2×) occupied area 0.3 (2×) 0.3 Dimensions in mm 0.4 (2×) 0.4 sot883_fr Reflow soldering is the only recommended soldering method. Fig 17. Reflow soldering footprint PDTC123JM(SOT883/SC-101) PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 7 — 21 December 2011 11 of 17

PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 3.3 2.9 1.9 solder lands solder resist 3 1.7 2 solder paste 0.7 0.6 occupied area (3×) (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 18. Reflow soldering footprint PDTC123JT(SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 19. Wave soldering footprint PDTC123JT(SOT23) PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 7 — 21 December 2011 12 of 17

PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 2.65 1.85 1.325 solder lands 2 solder resist 2.35 (03.×6) 3 1.3 solder paste 0.5 occupied area 1 (3×) Dimensions in mm 0.55 (3×) sot323_fr Fig 20. Reflow soldering footprint PDTC123JU(SOT323/SC-70) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 3.65 2.1 1.8 Dimensions in mm preferred transport 09 (2×) direction during soldering sot323_fw Fig 21. Wave soldering footprint PDTC123JU(SOT323/SC-70) PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 7 — 21 December 2011 13 of 17

PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PDTC123J_SERv.7 20111221 Product data sheet - PDTC123J_SERv.6 Modifications: • Figure3 and 5: corrected PDTC123J_SERv.6 20111215 Product data sheet - PDTC123J_SERIESv.5 PDTC123J_SERIESv.5 20040813 Product data sheet - PDTC123J_SERIESv.4 PDTC123J_SERIESv.4 20030410 Product specification - - PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 7 — 21 December 2011 14 of 17

PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 7 — 21 December 2011 15 of 17

PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k Export control — This document as well as the item(s) described herein 13.4 Trademarks may be subject to export control regulations. Export might require a prior authorization from competent authorities. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 7 — 21 December 2011 16 of 17

PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 15. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 14 Contact information. . . . . . . . . . . . . . . . . . . . . 16 15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 December 2011 Document identifier: PDTC123J_SER