PDTC114T series NPN resistor-equipped transistors; R1 = 10 kW , R2 = open Rev. 08 — 9 February 2006 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1: Product overview Type number Package PNP complement Philips JEITA JEDEC PDTC114TE SOT416 SC-75 - PDTA114TE PDTC114TK SOT346 SC-59A TO-236 PDTA114TK PDTC114TM SOT883 SC-101 - PDTA114TM PDTC114TS[1] SOT54 SC-43A TO-92 PDTA114TS PDTC114TT SOT23 - TO-236AB PDTA114TT PDTC114TU SOT323 SC-70 - PDTA114TU [1] Also available in SOT54A and SOT54 variant packages (seeSection2). 1.2 Features n Built-in bias resistors n Reduces component count n Simplifies circuit design n Reduces pick and place costs n 100 mA output current capability 1.3 Applications n Digital applications n Cost-savingalternativeforBC847series in digital applications n Controlling IC inputs n Switching loads 1.4 Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 50 V CEO I output current - - 100 mA O R1 bias resistor1 (input) 7 10 13 kW

PDTC114T series Philips Semiconductors NPN resistor-equipped transistors; R1 = 10 kW , R2 = open 2. Pinning information Table 3: Pinning Pin Description Simplified outline Symbol SOT54 1 input (base) 2 output (collector) 2 3 GND (emitter) 1 R1 1 2 3 001aab347 3 006aaa218 SOT54A 1 input (base) 2 output (collector) 2 3 GND (emitter) 1 R1 1 2 3 001aab348 3 006aaa218 SOT54 variant 1 input (base) 2 output (collector) 2 3 GND (emitter) 1 R1 1 2 3 001aab447 3 006aaa218 SOT23; SOT323; SOT346; SOT416 1 input (base) 2 GND (emitter) 3 3 3 output (collector) R1 1 1 2 2 006aaa144 sym012 SOT883 1 input (base) 2 GND (emitter) 1 3 3 3 output (collector) 2 R1 1 Transparent top view 2 sym012 PDTC114T_SER_8 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 08 — 9 February 2006 2 of 11

PDTC114T series Philips Semiconductors NPN resistor-equipped transistors; R1 = 10 kW , R2 = open 3. Ordering information Table 4: Ordering information Type number Package Name Description Version PDTC114TE SC-75 plastic surface mounted package; 3leads SOT416 PDTC114TK SC-59A plastic surface mounted package; 3leads SOT346 PDTC114TM SC-101 leadless ultra small plastic package; 3solder lands; SOT883 body1.0· 0.6· 0.5mm PDTC114TS[1] SC-43A plastic single-ended leaded (through hole) package; SOT54 3leads PDTC114TT - plastic surface mounted package; 3leads SOT23 PDTC114TU SC-70 plastic surface mounted package; 3leads SOT323 [1] Also available in SOT54A and SOT54 variant packages (seeSection2 andSection9). 4. Marking Table 5: Marking codes Type number Marking code[1] PDTC114TE 24 PDTC114TK 24 PDTC114TM DT PDTC114TS TC114T PDTC114TT *12 PDTC114TU *24 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PDTC114T_SER_8 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 08 — 9 February 2006 3 of 11

PDTC114T series Philips Semiconductors NPN resistor-equipped transistors; R1 = 10 kW , R2 = open 5. Limiting values Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 5 V EBO I output current - 100 mA O I peak collector current single pulse; - 100 mA CM t £ 1ms p P total power dissipation T £ 25(cid:176)C tot amb SOT416 [1] - 150 mW SOT346 [1] - 250 mW SOT883 [2][3] - 250 mW SOT54 [1] - 500 mW SOT23 [1] - 250 mW SOT323 [1] - 200 mW T storage temperature -65 +150 (cid:176)C stg T junction temperature - 150 (cid:176)C j T ambient temperature -65 +150 (cid:176)C amb [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 60mm copper strip line, standard footprint. 6. Thermal characteristics Table 7: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air th(j-a) junction to ambient SOT416 [1] - - 833 K/W SOT346 [1] - - 500 K/W SOT883 [2][3] - - 500 K/W SOT54 [1] - - 250 K/W SOT23 [1] - - 500 K/W SOT323 [1] - - 625 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 60mm copper strip line, standard footprint. PDTC114T_SER_8 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 08 — 9 February 2006 4 of 11

PDTC114T series Philips Semiconductors NPN resistor-equipped transistors; R1 = 10 kW , R2 = open 7. Characteristics Table 8: Characteristics T =25(cid:176) C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit I collector-base cut-off V =50V; I =0A - - 100 nA CBO CB E current I collector-emitter V =30V; I =0A - - 1 mA CEO CE B cut-off current V =30V; I =0A; - - 50 mA CE B T =150(cid:176)C j I emitter-base cut-off V =5V; I =0A - - 100 nA EBO EB C current h DCcurrent gain V =5V; I =1mA 200 - - FE CE C V collector-emitter I =10mA; I =0.5mA - - 150 mV CEsat C B saturation voltage R1 bias resistor1 (input) 7 10 13 kW C collector capacitance V =10V; I =i =0A; - - 2.5 pF c CB E e f=1MHz 006aaa552 006aaa553 600 1 (1) hFE VCEsat (V) 400 (2) 10- 1 (1) (3) (2) 200 (3) 0 10- 2 10- 1 1 10 102 10- 1 1 10 102 IC (mA) IC (mA) V =5V I /I =20 CE C B (1) T =150(cid:176)C (1) T =100(cid:176)C amb amb (2) T =25(cid:176)C (2) T =25(cid:176)C amb amb (3) T =-40 (cid:176)C (3) T =-40 (cid:176)C amb amb Fig 1. DCcurrent gain as a function of collector Fig 2. Collector-emitter saturation voltage as a current; typical values function of collector current; typical values PDTC114T_SER_8 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 08 — 9 February 2006 5 of 11

PDTC114T series Philips Semiconductors NPN resistor-equipped transistors; R1 = 10 kW , R2 = open 8. Package outline 1.8 0.95 3.1 1.3 1.4 0.60 2.7 1.0 3 0.6 3 0.45 0.2 0.15 1.75 0.9 3.0 1.7 1.45 0.7 2.5 1.3 1 2 1 2 0.30 0.25 0.50 0.26 0.15 0.10 0.35 0.10 1 1.9 Dimensions in mm 04-11-04 Dimensions in mm 04-11-11 Fig 3. Package outline SOT416 (SC-75) Fig 4. Package outline SOT346 (SC-59A/TO-236) 0.62 0.55 0.55 0.50 0.45 0.47 0.46 4.2 0.38 3.6 0.30 3 0.22 0.48 0.40 1.02 0.65 0.95 1 2 0.30 4.8 2.54 0.22 2 1 4.4 3 1.27 0.20 0.12 5.2 14.5 0.35 5.0 12.7 Dimensions in mm 03-04-03 Dimensions in mm 04-11-16 Fig 5. Package outline SOT883 (SC-101) Fig 6. Package outline SOT54 (SC-43A/TO-92) 0.45 0.38 0.45 43..26 0.38 4.2 3.6 1.27 0.48 0.40 3 max 1 2.5 0.48 max 0.40 1 2 44..84 5.08 4.8 2 2.54 4.4 2.54 3 1.27 3 5.2 14.5 5.2 14.5 5.0 12.7 5.0 12.7 Dimensions in mm 04-06-28 Dimensions in mm 05-01-10 Fig 7. Package outline SOT54A Fig 8. Package outline SOT54 variant PDTC114T_SER_8 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 08 — 9 February 2006 6 of 11

PDTC114T series Philips Semiconductors NPN resistor-equipped transistors; R1 = 10 kW , R2 = open 3.0 1.1 2.2 1.1 2.8 0.9 1.8 0.8 3 3 0.45 0.15 0.45 0.15 2.5 1.4 2.2 1.35 2.1 1.2 2.0 1.15 1 2 1 2 0.48 0.15 0.4 0.25 0.38 0.09 0.3 0.10 1.9 1.3 Dimensions in mm 04-11-04 Dimensions in mm 04-11-04 Fig 9. Package outline SOT23 (TO-236AB) Fig 10. Package outline SOT323 (SC-70) 9. Packing information Table 9: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 5000 10000 PDTC114TE SOT416 4mm pitch, 8mm tape and reel -115 - -135 PDTC114TK SOT346 4mm pitch, 8mm tape and reel -115 - -135 PDTC114TM SOT883 2mm pitch, 8mm tape and reel - - -315 PDTC114TS SOT54 bulk, straight leads - -412 - SOT54A tape and reel, wide pitch - - -116 tape ammopack, wide pitch - - -126 SOT54 variant bulk, delta pinning - -112 - PDTC114TT SOT23 4mm pitch, 8mm tape and reel -215 - -235 PDTC114TU SOT323 4mm pitch, 8mm tape and reel -115 - -135 [1] For further information and the availability of packing methods, seeSection15. PDTC114T_SER_8 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 08 — 9 February 2006 7 of 11

PDTC114T series Philips Semiconductors NPN resistor-equipped transistors; R1 = 10 kW , R2 = open 10. Revision history Table 10: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PDTC114T_SER_8 20060209 Product data sheet - - PDTC114T_SER_7 Modifications: • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. • Type number PDTC114TEF removed • Table 1 “Product overview”: EIAJ in table header amended to JEITA • Section 1.2 “Features”: amended • Section 1.3 “Applications”: amended • Figure1,2,7 and8: added • Figure3,4,5,6,9 and10: superseded by minimized package outline drawings • Section 9 “Packing information”: added • Section 14 “Trademarks”: added PDTC114T_SER_7 20041011 Product - 939775014186 PDTC114T_SERIES_6 specification PDTC114T_SERIES_6 20040817 Product - 939775013664 PDTC114T_SERIES_5 specification PDTC114T_SERIES_5 20040119 Product - 939775011731 PDTC114T_SERIES_4 specification PDTC114T_SERIES_4 20030414 Product - 939775011011 PDTC114TE_2 specification PDTC114TK_2 PDTC114TS_2 PDTC114TT_3 PDTC114TU_3 PDTC114TU_3 19990416 Preliminary - 939775005599 PDTC114TU_2 specification PDTC114TU_2 19980519 Preliminary - 939775003908 PDTC114TU_1 specification PDTC114TU_1 19970716 Preliminary - 939775001149 - specification PDTC114TT_3 19990416 Objective - 939775005598 PDTC114TT_2 specification PDTC114TT_2 19980519 Objective - 939775003912 PDTC114TT_1 specification PDTC114TT_1 19970714 Objective - 939775001371 - specification PDTC114TS_2 19980518 Product - 939775003891 PDTC114TS_1 specification PDTC114TS_1 19970703 Product - 939775002297 - specification PDTC114TK_2 19980519 Product - 939775003899 PDTC114TK_1 specification PDTC114T_SER_8 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 08 — 9 February 2006 8 of 11

PDTC114T series Philips Semiconductors NPN resistor-equipped transistors; R1 = 10 kW , R2 = open Table 10: Revision history …continued Document ID Release date Data sheet status Change notice Doc. number Supersedes PDTC114TK_1 19970528 Product - 939775001367 - specification PDTC114TE_2 19980803 Product - 939775004123 PDTC114TE_1 specification PDTC114TE_1 19970711 Product - 939775002628 - specification PDTC114T_SER_8 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 08 — 9 February 2006 9 of 11

PDTC114T series Philips Semiconductors NPN resistor-equipped transistors; R1 = 10 kW , R2 = open 11. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification Thisdatasheetcontainsdatafromthepreliminaryspecification.Supplementarydatawillbepublished atalaterdate.PhilipsSemiconductorsreservestherighttochangethespecificationwithoutnotice,in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the righttomakechangesatanytimeinordertoimprovethedesign,manufacturingandsupply.Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URLhttp://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification —The data in a short-form specification is Right to make changes —Philips Semiconductors reserves the right to extracted from a full data sheet with the same type number and title. For make changes in the products - including circuits, standard cells, and/or detailed information see the relevant data sheet or data handbook. software - described or contained herein in order to improve design and/or Limiting values definition — Limiting values given are in accordance with performance. When the product is in full production (status ‘Production’), the Absolute Maximum Rating System (IEC60134). Stress above one or relevant changes will be communicated via a Customer Product/Process more of the limiting values may cause permanent damage to the device. Change Notification (CPCN). Philips Semiconductors assumes no These are stress ratings only and operation of the device at these or at any responsibility or liability for the use of any of these products, conveys no other conditions above those given in the Characteristics sections of the license or title under any patent, copyright, or mask work right to these specification is not implied. Exposure to limiting values for extended periods products,andmakesnorepresentationsorwarrantiesthattheseproductsare may affect device reliability. freefrompatent,copyright,ormaskworkrightinfringement,unlessotherwise specified. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makesnorepresentationorwarrantythatsuchapplicationswillbesuitablefor 14. Trademarks the specified use without further testing or modification. Notice —All referenced brands, product names, service names and 13. Disclaimers trademarks are the property of their respective owners. Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com PDTC114T_SER_8 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 08 — 9 February 2006 10 of 11

PDTC114T series Philips Semiconductors NPN resistor-equipped transistors; R1 = 10 kW , R2 = open 16. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8 11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 10 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 15 Contact information . . . . . . . . . . . . . . . . . . . . 10 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 09 February 2006