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  • 型号: PD55003-E
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
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PD55003-E产品简介:

ICGOO电子元器件商城为您提供PD55003-E由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 PD55003-E价格参考。STMicroelectronicsPD55003-E封装/规格:晶体管 - FET,MOSFET - 射频, RF Mosfet LDMOS 12.5V 50mA 500MHz 17dB 3W 10-PowerSO。您可以下载PD55003-E参考资料、Datasheet数据手册功能说明书,资料中有PD55003-E 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANS RF N-CH FET LDMOST PWRSO10射频MOSFET晶体管 RF POWER TRANS

产品分类

RF FET分离式半导体

Id-ContinuousDrainCurrent

2.5 A

Id-连续漏极电流

2.5 A

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,晶体管射频,射频MOSFET晶体管,STMicroelectronics PD55003-E-

数据手册

点击此处下载产品Datasheet

产品型号

PD55003-E

Pd-PowerDissipation

31.7 W

Pd-功率耗散

31.7 W

Vds-Drain-SourceBreakdownVoltage

40 V

Vds-漏源极击穿电压

40 V

Vgs-Gate-SourceBreakdownVoltage

+/- 20 V

Vgs-栅源极击穿电压

+/- 20 V

产品目录页面

点击此处下载产品Datasheet

产品种类

射频MOSFET晶体管

供应商器件封装

10-PowerSO

其它名称

497-5297-5
PD55003E

其它有关文件

http://www.st.com/web/catalog/sense_power/FM1987/CL1989/SC1821/PF133433?referrer=70071840

功率-输出

3W

功率耗散

31.7 W

包装

管件

商标

STMicroelectronics

噪声系数

-

增益

17dB

安装风格

SMD/SMT

封装

Tube

封装/外壳

PowerSO-10 裸露底部焊盘

封装/箱体

PowerSO-10RF (Formed Lead)

工厂包装数量

50

技术

LDMOS

晶体管极性

N-Channel

晶体管类型

LDMOS

最大工作温度

+ 150 C

最小工作温度

- 65 C

标准包装

50

正向跨导-最小值

1 S

汲极/源极击穿电压

40 V

漏极连续电流

2.5 A

电压-测试

12.5V

电压-额定

40V

电流-测试

50mA

系列

PD55003-E

输出功率

3 W

配置

Single

闸/源击穿电压

+/- 20 V

频率

500MHz

额定电流

2.5A

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PDF Datasheet 数据手册内容提取

PD55003-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ P = 3 W with 17dB gain @ 500 MHz / 12.5 V OUT Description PowerSO-10RF (formed lead) The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55003 boasts excellent gain, linearity and reliability thanks to ST’s latest LDMOS technology mounted in the PowerSO-10RF first true SMD plastic RF power package, the (straight lead) PowerSO-10RF. The PD55003’s superior linearity performance makes it an ideal solution for car mobile radios. Figure 1. Pin connection The PowerSO-10RF plastic package is designed Source for high reliability, and is the first JEDEC- approved, high power SMD package from ST. It has been optimized for RF requirements and offers excellent RF performance and ease of assembly. Gate Drain Mounting recommendations are provided in application note AN1294, available on www.st.com. Table 1. Device summary Order code Package Packing PD55003-E PowerSO-10RF (formed lead) Tube PD55003S-E PowerSO-10RF (straight lead) Tube PD55003TR-E PowerSO-10RF (formed lead) Tape and reel PD55003STR-E PowerSO-10RF (straight lead) Tape and reel August 2011 Doc ID 12273 Rev 4 1/29 www.st.com 29

Contents PD55003-E Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 Moisture sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.1 Performance for the PowerSO-10RF formed lead . . . . . . . . . . . . . . . . . . . 7 4.2 Performance for the PowerSO-10RF straight lead . . . . . . . . . . . . . . . . . . 10 5 Typical performance (860 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.1 Performance for the PowerSO-10RF formed lead . . . . . . . . . . . . . . . . . . 12 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 8 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 2/29 Doc ID 12273 Rev 4

PD55003-E Electrical data 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (T = 25°C) CASE Symbol Parameter Value Unit V Drain-source voltage 40 V (BR)DSS V Gate-source voltage ± 20 V GS I Drain current 2.5 A D P Power dissipation (@ T = 70°C) 31.7 W DISS C T Max. operating junction temperature 165 °C J T Storage temperature -65 to +150 °C STG 1.2 Thermal data Table 3. Thermal data Symbol Parameter Value Unit R Junction - case thermal resistance 3.0 °C/W thJC Doc ID 12273 Rev 4 3/29

Electrical characteristics PD55003-E 2 Electrical characteristics T = +25 oC CASE 2.1 Static Table 4. Static Symbol Test conditions Min Typ Max Unit I V = 0 V = 28 V 1 µA DSS GS DS I V = 20 V V = 0 1 µA GSS GS DS V V = 10 V I = 50 mA 2.0 5.0 V GS(Q) DS D R V = 10 V I = 1 A 0.75 Ω DS(ON) GS D g V = 10 V I = 1 A 1.0 mho FS DS D C V = 0 V = 12.5 V f = 1 MHz 36 pF ISS GS DS C V = 0 V = 12.5 V f = 1 MHz 24 pF OSS GS DS C V = 0 V = 12.5 V f = 1 MHz 2.4 pF RSS GS DS 2.2 Dynamic Table 5. Dynamic Symbol Test conditions Min Typ Max Unit P V = 12.5 V, I = 50 mA f = 500 MHz 3 W 1dB DD DQ G V = 12.5 V, I = 50 mA, P = 3W, f = 500 MHz 14 17 dB P DD DQ OUT h V = 12.5 V, I = 50 mA, P = 3W, f = 500 MHz 45 52 % D DD DQ OUT Load V = 15.5 V, I = 50 mA, P = 3W, f = 500 MHz DD DQ OUT 20:1 VSWR mismatch All phase angles 2.3 Moisture sensitivity level T able 6. Moisture sensitivity level Test methodology Rating J-STD-020B MSL 3 4/29 Doc ID 12273 Rev 4

PD55003-E Impedance 3 Impedance Figure 2. Current conventions D ZDL TypicalInput TypicalDrain Impedance LoadImpedance G Zin S Table 7. Impedance data PD55003-E PD55003S-E Freq. (MHz) Z (Ω) Z (Ω) Freq. (MHz) Z (Ω) Z (Ω) IN DL IN DL 520 1.871 - j 1.118 4.779 + j 4.956 520 1.407 - j 3.550 6.557 + j 7.844 500 1.542 - j 3.705 6.842 + j 6.209 500 1.306 - j 5.159 8.351 + j 9.120 480 1.109 - j 1.783 6.789 + j 4.533 480 1.302 - j 6.141 8.994 + j 8.983 860 1.33 + j 1.23 2.93 + j 0.62 Doc ID 12273 Rev 4 5/29

Typical performance PD55003-E 4 Typical performance Figure 3. Capacitance vs. drain voltage Figure 4. Drain current vs. gate-source voltage 100 2.5 f= 1 MHz S (pF) Ciss NT (A) 2 E E C Coss R1.5 N R TA 10 CU CI N 1 A AI P R A D C, C Crss Id, 0.5 Vdd=10V 0 1 2 2.5 3 3.5 4 4.5 5 5.5 6 0 5 10 15 20 25 30 VGS, GATE-SOURCE VOLTAGE (V) VDD, DRAIN VOLTAGE (V) Figure 5. Gate-source voltage vs. case Figure 6. Maximum safe operating area temperature alized)1.06 10 m1.04 Nor Id= 2.5 A TJ = +165°C CE VOLTAGE (1.021 Id= I2d A= I1d.=5 1A A N CURRENT (A) 1 OUR0.98 DRAI TE-S Id= .5 A Id, TC = 100 °C TC = 70 °C TC = 25 °C A0.96 S, G Vds= 10 V Id= .25 A G V0.94 -25 0 25 50 75 100 0.1 1 10 100 Tc, CASE TEMPERATURE (°C) VDS, DRAIN-SOURCE VOLTAGE (V) AM10119V1 6/29 Doc ID 12273 Rev 4

PD55003-E Typical performance 4.1 Performance for the PowerSO-10RF formed lead Figure 7. Output power vs. input power Figure 8. Output power vs. input power 7 7 6 500 MHz 6 W) W) 480 MHz R ( 5 520 MHz R (5 E E W 480 MHz W 500 MHz PO 4 PO 4 520 MHz T T U U P 3 P 3 T T U U O O ut, 2 ut, 2 o o P P 1 Vdd = 12.5 V 1 Vdd = 12.5 V Idq = 50 mA Idq = 50 mA Tune for Po=3 W Tune for Po=6 W 0 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 Pin, INPUT POWER (W) Pin, INPUT POWER (W) Figure 9. Drain efficiency vs. output power Figure 10. Drain efficiency vs. output power 70 70 %) 60 520 MHz %)60 480 MHz Y ( Y ( NC NC 500 MHz CIE 50 CIE50 520 MHz FI 500 MHz FI EF 480 MHz EF N 40 N 40 AI AI R R D D Nd, 30 Nd, 30 Vdd = 12.5 V Vdd = 12.5 V Idq = 50 mA Idq = 50 mA Tune for Po=3 W Tune for Po=6 W 20 20 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) Doc ID 12273 Rev 4 7/29

Typical performance PD55003-E Figure 11. Power gain vs. output power Figure 12. Return loss vs. output power 20 0 18 GAIN (dB)1146 520 MHz 480 MHz 500 MHz N LOSS (dB)-10 480 MHz 520 MHz 500 MHz R 12 UR-20 E T W E PO10 T R Gp, 8 NPU-30 6 VIddqd = = 5 102 m.5A V Rl, I VIddqd = = 5 102 m.5A V Tune for Po=3 W Tune for Po=3 W 4 -40 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) Figure 13. Output power vs. bias current Figure 14. Drain efficiency vs. bias current 4 60 3.8 480 MHz 50 500 MHz W) 500 MHz %) WER ( 3.6 520 MHz NC Y( 40 520 MHz 480 MHz PO 3.4 CIE UT FFI 30 P 3.2 E Pout, OUT 2.83 VPdind= 1=7 1.92 .d5 BVm Nd, DRAIN 1200 Vdd = 12.5 V Tune for Po=3 W Pin=17.9 dBm Tune for Po=3 W 2.6 0 0 100 200 300 400 500 600 0 100 200 300 400 500 600 IDQ, BIAS CURRENT (mA) IDQ, BIAS CURRENT (mA) Figure 15. Output power vs. supply voltage Table 8. Drain efficiency vs. supply voltage 3.5 60 500 MHz ER (W) 3 480 MHz CY (%)4500 480 MHz 520 MHz POW 500 MHz 520 MHz CIEN UT 2.5 FFI30 TP N E Pout, OU 2 Nd, DRAI20 10 Idq = 50 mA Idq = 50 mA Pin=17.9 dBm Pin=17.9 dBm Tune for Po=3 W Tune for Po=3 W 1.5 0 8 9 10 11 12 13 14 15 8 9 10 11 12 13 14 15 VDD, SUPPLY VOLTAGE (V) VDD, SUPPLY VOLTAGE (V) 8/29 Doc ID 12273 Rev 4

PD55003-E Typical performance Figure 16. Output power vs. gate voltage 5 W) 4 R ( E W O 3 P T 480 MHz U P T 2 OU 520 MHz ut, 500 MHz o P 1 Vdd = 12.5 V Pin=17.9 dBm Tune for Po=3 W 0 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Doc ID 12273 Rev 4 9/29

Typical performance PD55003-E 4.2 Performance for the PowerSO-10RF straight lead Figure 17. Output power vs. input power Figure 18. Output power vs. input power 7 7 500 MHz W) 6 6 R ( 480 MHz W) 500 MHz WE 5 520 MHz ER (5 O W 480 MHz PUT P 34 PUT PO34 520 MHz Pout, OUT 21 Vdd = 12.5 V Pout, OUT 21 Vdd = 12.5 V Idq = 50 mA Idq = 50 mA 0 Tune for Po=3 W 0 Tune for Po=6 W 0 0.05 0.1 0.15 0.2 0.25 0.3 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 Pin, INPUT POWER (W) Pin, INPUT POWER (W) Figure 19. Drain efficiency vs. output power Figure 20. Drain efficiency vs. output power 80 80 70 520 MHz 70 %) 500 MHz %) Y ( Y ( C60 480 MHz C60 N N E E CI CI 480 MHz EFFI50 EFFI50 500 MHz N N 520 MHz RAI40 RAI40 D D d, d, N N 30 Vdd = 12.5 V 30 Vdd = 12.5 V Idq = 50 mA Idq = 50 mA Tune for Po=3 W Tune for Po=6 W 20 20 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) Figure 21. Power gain vs. output power Figure 22. Return loss vs. output power 20 0 18 500 MHz B) 480 MHz dB)16 480 MHz S (d-10 500 MHz GAIN (14 520 MHz N LOS R 12 UR-20 520 MHz E T W E O10 R P T Gp, 8 NPU-30 6 Vdd = 12.5 V Rl, I Vdd = 12.5 V Idq = 50 mA Idq = 50 mA Tune for Po=3 W 4 Tune for Po=3 W -40 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 10/29 Doc ID 12273 Rev 4

PD55003-E Typical performance Figure 23. Output power vs. bias current Figure 24. Drain efficiency vs. bias current 4 60 500 MHz 3.8 480 MHz W) %) 50 R (3.6 500 MHz Y ( 480 MHz 520 MHz E C W N PO3.4 520 MHz CIE 40 T FI U F P 3.2 E OUT AIN 30 Pout, 2.38 Vdd = 12.5 V Nd, DR 20 Vdd = 12.5 V Pin=17.7 dBm Pin=17.7 dBm Tune for Po=3 W Tune for Po=3 W 2.6 10 0 100 200 300 400 500 600 0 100 200 300 400 500 600 IDQ, BIAS CURRENT (mA) IDQ,BIAS CURRENT (mA) Figure 25. Output power vs. supply voltage Figure 26. Drain efficiency vs. supply voltage 3.5 60 500 MHz R (W) 3 500 MHz CY (%)50 480 MHz 520 MHz E N40 W E TPUT PO 2.5 480 MHz 520 MHz N EFFICI30 Pout, OU 2 Idq=50 mA Nd, DRAI1200 Idq=50 mA Pin=17.7 dBm Pin=17.7 dBm Tune for Po=3 W Tune for Po=3 W 0 1.5 8 9 10 11 12 13 14 15 8 9 10 11 12 13 14 15 VDD, SUPPLY VOLTAGE (V) VDD, SUPPLY VOLTAGE (V) Figure 27. Output power vs. gate voltage 5 W) 4 R ( 480 MHz E W O 3 P UT 520 MHz P T 2 U ut, O 500 MHz o P 1 Vdd=12.5V Pin=17.7 dBm Tune for Po=3 W 0 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Doc ID 12273 Rev 4 11/29

Typical performance (860 MHz) PD55003-E 5 Typical performance (860 MHz) 5.1 Performance for the PowerSO-10RF formed lead Figure 28. Output power vs. input power Figure 29. Drain efficiency vs. output power Pout (W) Nd (%) 5 60 4 50 3 40 2 30 1 20 Vdd = 12.5V Vdd = 12.5V Idq = 50 mA Idq = 50 mA 0 10 0 0.05 0.1 0.15 0.2 0.25 0.3 0 1 2 3 4 5 Pin (W) Pout (W) Figure 30. Input return loss vs. output power Rl (dB) 0 -5 -10 -15 -20 -25 Vdd = 12.5V Idq = 50 mA -30 0 1 2 3 4 5 Pout (W) 12/29 Doc ID 12273 Rev 4

PD55003-E Test circuit 6 Test circuit Figure 31. Test circuit schematic Table 9. Test circuit component list Component Description B1,B2 Short ferrite bead, Fair-Rite Products Corp (2743021446) C1,C14 240 pF, 100 mil chip capacitor C2,C3,C4,C10,C11,C12 0 TO 20 pF trimmer capacitor C5 130 pF, 100 mil chip cap C6,C17 120 pF, 100 mil chip cap C7,C14 10 µF, 50 V electrolytic capacitor C8,C15 1.200 pF, 100 mil chip cap C9,C16 0.1 F, 100 mil chip cap L1 55.5 nH, 5 turn, Coilcraft N1,N2 Type N flange mount R1 15 Ω, 0805 chip resistor R2 1.0 kΩ, 1/8 W resistor R3 15 Ω, 0805 chip resistor R4 33 kΩ, 1/8 W resistor Z1 0.175’’ X 0.080’’ microstrip Z2 1.049’’ X 0.080’’ microstrip Z3 0.289’’ X 0.080’’ microstrip Z4 0.026’’ X 0.080’’ microstrip Z5 0.192’’ X 0.223’’ microstrip Z6,Z7 0.260’’ X 0.223’’ microstrip Z8 0.064’’ X 0.080’’ microstrip Z9 0.334’’ X 0.080’’ microstrip Doc ID 12273 Rev 4 13/29

Test circuit PD55003-E Table 9. Test circuit component list (continued) Component Description Z10 0.985’’ X 0.080’’ microstrip Z11 0.472’’ X 0.080’’ microstrip ε Board Roger ultra LAM 2000 THK 0.030” = 2.55 2oz ED Cµ both sides r 14/29 Doc ID 12273 Rev 4

PD55003-E Circuit layout 7 Circuit layout Figure 32. Test fixture component layout BIAS VDD GND Figure 33. Test circuit photomaster s e h c n 4 i 6.4 inches Doc ID 12273 Rev 4 15/29

Common source s-parameter PD55003-E 8 Common source s-parameter Table 10. S-parameter for the PowerSO-10RF formed lead (V = 12.5 V, I = 0.15 A) DS DS Freq IS I S ∠Φ IS I S ∠Φ IS I S - DF IS I S - DF (MHz) 11 11 21 21 12 12 22 22 50 0.780 -120 21.77 106 0.038 19 0.669 -111 100 0.764 -144 11.34 88 0.040 -1 0.643 -137 150 0.786 -154 7.47 77 0.040 -10 0.634 -145 200 0.804 -159 5.45 69 0.037 -19 0.660 -149 250 0.817 -163 4.22 61 0.036 -26 0.680 -152 300 0.835 -165 3.36 55 0.034 -31 0.720 -156 350 0.852 -167 2.75 48 0.031 -36 0.766 -158 400 0.865 -169 2.28 43 0.028 -41 0.786 -160 450 0.877 -171 1.92 38 0.027 -45 0.816 -161 500 0.889 -172 1.65 34 0.025 -49 0.827 -163 550 0.899 -174 1.42 30 0.022 -52 0.847 -165 600 0.909 -175 1.24 27 0.021 -51 0.856 -167 650 0.918 -177 1.09 23 0.018 -56 0.874 -169 700 0.924 -178 0.97 20 0.018 -54 0.881 -170 750 0.926 -179 0.87 17 0.016 -61 0.895 -172 800 0.929 180 0.78 15 0.014 -62 0.906 -173 850 0.935 179 0.71 12 0.011 -56 0.916 -174 900 0.938 178 0.65 10 0.011 -63 0.913 -175 950 0.940 177 0.59 8 0.010 -62 0.925 -177 1000 0.941 176 0.55 5 0.007 -69 0.928 -178 1050 0.944 175 0.51 3 0.007 -57 0.925 -180 1100 0.947 174 0.47 1 0.006 -56 0.929 -180 1150 0.946 173 0.44 -1 0.005 -53 0.928 179 1200 0.944 172 0.41 -3 0.004 -40 0.927 178 1250 0.949 171 0.38 -5 0.004 -54 0.928 176 1300 0.949 170 0.36 -7 0.003 -63 0.940 176 1350 0.947 169 0.34 -9 0.001 -15 0.935 175 1400 0.949 168 0.31 -10 0.001 82 0.938 175 1450 0.946 167 0.29 -12 0.002 76 0.933 174 1500 0.948 167 0.27 -12 0.002 124 0.939 173 16/29 Doc ID 12273 Rev 4

PD55003-E Common source s-parameter Table 11. S-parameter for the PowerSO-10RF formed lead (V = 12.5 V, I = 0.8 A) DS DS Freq IS I S ∠Φ IS I S ∠Φ IS I S - DF IS I S - DF (MHz) 11 11 21 21 12 12 22 22 50 0.786 -138 26.54 100 0.026 13 0.666 -137 100 0.791 -156 13.46 87 0.026 0 0.674 -155 150 0.816 -163 8.94 80 0.027 -5 0.662 -160 200 0.829 -167 6.63 73 0.026 -13 0.678 -163 250 0.835 -170 5.24 67 0.025 -16 0.677 -164 300 0.846 -171 4.26 62 0.025 -21 0.709 -167 350 0.854 -173 3.57 56 0.023 -25 0.736 -167 400 0.864 -174 3.01 51 0.021 -31 0.758 -168 450 0.872 -175 2.58 47 0.021 -31 0.783 -167 500 0.878 -176 2.24 43 0.019 -34 0.787 -168 550 0.890 -177 1.97 39 0.018 -37 0.800 -170 600 0.896 -178 1.74 36 0.017 -39 0.816 -171 650 0.902 -179 1.56 32 0.014 -44 0.827 -173 700 0.910 180 1.41 29 0.015 -38 0.845 -173 750 0.909 179 1.27 26 0.012 -46 0.854 -175 800 0.917 178 1.16 23 0.011 -41 0.865 -175 850 0.918 177 1.06 21 0.008 -37 0.879 -176 900 0.925 176 0.97 18 0.010 -43 0.877 -177 950 0.926 175 0.90 15 0.008 -47 0.887 -179 1000 0.927 174 0.83 12 0.007 -44 0.889 180 1050 0.921 173 0.77 10 0.007 -47 0.898 179 1100 0.932 172 0.72 8 0.006 -11 0.902 179 1150 0.933 172 0.67 6 0.005 -35 0.895 178 1200 0.930 171 0.63 4 0.004 -16 0.901 177 1250 0.937 170 0.59 1 0.004 -14 0.897 176 1300 0.937 169 0.55 -1 0.004 4 0.916 176 1350 0.936 168 0.52 -3 0.003 1 0.909 175 1400 0.937 168 0.49 -4 0.004 39 0.917 174 1450 0.934 167 0.45 -6 0.004 60 0.910 173 1500 0.938 166 0.43 -7 0.002 73 0.916 172 Doc ID 12273 Rev 4 17/29

Common source s-parameter PD55003-E Table 12. S-parameter for the PowerSO-10RF formed lead (V = 12.5 V, I = 1.5 A) DS DS Freq IS I S ∠Φ IS I S ∠Φ IS I S - DF IS I S - DF (MHz) 11 11 21 21 12 12 22 22 50 0.789 -140 26.35 100 0.025 15 0.666 -141 100 0.800 -157 13.35 87 0.025 -1 0.675 -157 150 0.825 -164 8.88 80 0.024 -6 0.667 -162 200 0.836 -168 6.59 74 0.023 -13 0.678 -164 250 0.842 -171 5.22 68 0.024 -16 0.678 -165 300 0.851 -172 4.26 62 0.022 -18 0.713 -168 350 0.856 -174 3.56 57 0.021 -25 0.738 -168 400 0.864 -175 3.02 52 0.021 -28 0.754 -168 450 0.874 -176 2.60 48 0.019 -32 0.770 -168 500 0.882 -177 2.25 44 0.017 -32 0.782 -169 550 0.888 -178 1.98 40 0.016 -33 0.796 -171 600 0.898 -179 1.76 36 0.016 -37 0.806 -172 650 0.901 -180 1.58 33 0.013 -34 0.825 -173 700 0.909 179 1.42 30 0.013 -42 0.843 -174 750 0.910 178 1.29 27 0.011 -36 0.852 -175 800 0.915 177 1.18 24 0.012 -36 0.861 -176 850 0.915 177 1.08 21 0.010 -26 0.863 -176 900 0.922 176 0.99 19 0.009 -28 0.873 -178 950 0.926 175 0.92 16 0.008 -39 0.880 -179 1000 0.925 174 0.85 13 0.007 -39 0.882 180 1050 0.927 173 0.79 11 0.006 -27 0.892 179 1100 0.928 172 0.74 9 0.005 -35 0.891 178 1150 0.932 171 0.68 6 0.006 -11 0.899 178 1200 0.929 170 0.64 4 0.005 -20 0.896 177 1250 0.933 170 0.60 1 0.004 8 0.889 176 1300 0.935 169 0.57 0 0.005 15 0.907 175 1350 0.933 168 0.53 -3 0.004 25 0.904 174 1400 0.936 167 0.50 -4 0.003 53 0.911 174 1450 0.934 166 0.49 -6 0.004 53 0.909 173 1500 0.936 165 0.44 -7 0.004 64 0.914 172 18/29 Doc ID 12273 Rev 4

PD55003-E Common source s-parameter Table 13. S-parameter for the PowerSO-10RF straight lead (V = 12.5 V, I = 0.15 A) DS DS Freq IS I S ∠Φ IS I S ∠Φ IS I S - DF IS I S - DF (MHz) 11 11 21 21 12 12 22 22 50 0.790 -120 22 107 0.038 17 0.682 -114 100 0.773 -145 11 89 0.039 -2 0.647 -138 150 0.791 -154 7 78 0.039 -9 0.640 -147 200 0.807 -159 5 70 0.037 -19 0.671 -151 250 0.820 -162 4 63 0.036 -23 0.691 -154 300 0.836 -164 3 56 0.033 -29 0.728 -156 350 0.850 -166 3 50 0.032 -33 0.751 -158 400 0.867 -167 2 45 0.030 -36 0.782 -160 450 0.880 -169 2 40 0.027 -43 0.808 -161 500 0.890 -170 2 36 0.024 -43 0.835 -163 550 0.902 -171 1 33 0.023 -50 0.845 -165 600 0.911 -172 1 29 0.022 -51 0.864 -166 650 0.919 -173 1 26 0.020 -55 0.872 -167 700 0.923 -174 1 23 0.018 -52 0.884 -169 750 0.924 -176 1 20 0.016 -55 0.887 -170 800 0.933 -177 1 18 0.015 -55 0.895 -172 850 0.936 -177 1 15 0.015 -56 0.912 -173 900 0.940 -178 1 13 0.012 -59 0.916 -174 950 0.943 -179 1 11 0.011 -53 0.926 -176 1000 0.944 -180 1 8 0.008 -60 0.943 -177 1050 0.949 180 1 7 0.007 -64 0.935 -177 1100 0.948 179 0 4 0.007 -44 0.944 -178 1150 0.950 178 0 3 0.006 -44 0.939 -179 1200 0.950 177 0 -1 0.005 -50 0.942 -180 1250 0.955 177 0 -2 0.004 -42 0.941 179 1300 0.951 176 0 -4 0.004 -41 0.933 178 1350 0.953 175 0 -5 0.004 -50 0.933 177 1400 0.953 175 0 -7 0.002 -41 0.947 176 1450 0.952 173 0 -9 0.002 -13 0.952 175 1500 0.949 173 0 -10 0.000 -3 0.958 174 Doc ID 12273 Rev 4 19/29

Common source s-parameter PD55003-E Table 14. S-parameter for the PowerSO-10RF straight lead (V = 12.5 V, I = 0.8 A) DS DS Freq IS I S ∠Φ IS I S ∠Φ IS I S - DF IS I S - DF (MHz) 11 11 21 21 12 12 22 22 50 0.807 -137 26.18 102 0.025 12 0.682 -140 100 0.809 -156 13.41 88 0.026 0 0.683 -157 150 0.827 -163 8.92 81 0.025 -6 0.677 -162 200 0.838 -167 6.64 75 0.024 -12 0.698 -165 250 0.842 -169 5.24 69 0.026 -13 0.704 -166 300 0.849 -171 4.28 64 0.022 -19 0.720 -167 350 0.856 -172 3.57 59 0.023 -21 0.736 -167 400 0.866 -173 3.03 54 0.021 -28 0.758 -168 450 0.873 -174 2.61 50 0.020 -30 0.773 -168 500 0.881 -174 2.26 46 0.056 -27 0.797 -169 550 0.891 -175 1.99 42 0.018 -36 0.806 -170 600 0.896 -176 1.76 39 0.017 -35 0.825 -171 650 0.902 -176 1.58 36 0.016 -38 0.831 -171 700 0.908 -177 1.42 33 0.015 -39 0.834 -172 750 0.910 -178 1.29 30 0.014 -40 0.845 -174 800 0.916 -179 1.18 27 0.012 -43 0.859 -174 850 0.922 -180 1.08 25 0.011 -40 0.864 -175 900 0.926 180 1.00 22 0.009 -44 0.878 -176 950 0.927 179 0.93 19 0.010 -43 0.892 -178 1000 0.929 178 0.85 17 0.007 -34 0.905 -178 1050 0.937 178 0.80 15 0.007 -30 0.901 -179 1100 0.934 177 0.75 12 0.006 -29 0.910 -179 1150 0.934 177 0.70 10 0.006 -29 0.914 -180 1200 0.937 176 0.65 7 0.005 -23 0.912 180 1250 0.941 175 0.62 5 0.005 -25 0.912 179 1300 0.938 175 0.57 3 0.005 -3 0.909 177 1350 0.941 174 0.54 1 0.004 3 0.906 176 1400 0.941 174 0.51 -1 0.004 18 0.918 176 1450 0.939 173 0.48 -2 0.003 21 0.925 174 1500 0.939 172 0.45 -3 0.002 42 0.931 173 20/29 Doc ID 12273 Rev 4

PD55003-E Common source s-parameter Table 15. S-parameter for the PowerSO-10RF straight lead (V = 12.5 V, I = 1.5 A) DS DS Freq IS I S ∠Φ IS I S ∠Φ IS I S - DF IS I S - DF (MHz) 11 11 21 21 12 12 22 22 50 0.816 -140 26.05 101 0.024 11 0.684 -144 100 0.817 -157 13.34 88 0.025 -2 0.690 -159 150 0.839 -164 8.89 82 0.024 -3 0.685 -164 200 0.847 -168 6.62 76 0.024 -10 0.701 -166 250 0.850 -170 5.25 70 0.023 -14 0.707 -168 300 0.655 -171 4.29 65 0.023 -17 0.726 -168 350 0.861 -173 3.59 60 0.021 -21 0.735 -169 400 0.869 -174 3.06 55 0.020 -24 0.761 -169 450 0.877 -174 2.64 51 0.019 -27 0.769 -170 500 0.884 -175 2.30 47 0.017 -31 0.795 -170 550 0.893 -176 2.02 44 0.017 -26 0.800 -171 600 0.898 -177 1.80 40 0.015 -36 0.819 -172 650 0.905 -177 1.62 38 0.015 -36 0.829 -172 700 0.908 -178 1.46 34 0.014 -34 0.831 -173 750 0.909 -179 1.33 31 0.012 -35 0.842 -174 800 0.914 -179 1.21 29 0.012 -36 0.852 -175 850 0.918 -180 1.11 26 0.011 -31 0.856 -176 900 0.923 179 1.03 23 0.009 -32 0.872 -177 950 0.927 179 0.96 21 0.009 -34 0.879 -178 1000 0.926 178 0.88 18 0.008 -21 0.894 -178 1050 0.935 178 0.83 16 0.007 -20 0.898 -179 1100 0.933 177 0.78 13 0.007 -22 0.900 -179 1150 0.933 176 0.73 10 0.006 -15 0.904 180 1200 0.934 175 0.68 8 0.005 -18 0.903 179 1250 0.940 175 0.64 6 0.004 -16 0.901 178 1300 0.935 174 0.59 4 0.004 4 0.902 177 1350 0.938 174 0.56 2 0.005 5 0.898 176 1400 0.938 173 0.53 0 0.005 25 0.915 175 1450 0.939 173 0.50 -2 0.004 14 0.925 174 1500 0.935 172 0.47 -3 0.002 48 0.928 173 Doc ID 12273 Rev 4 21/29

Package mechanical data PD55003-E 9 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 22/29 Doc ID 12273 Rev 4

PD55003-E Package mechanical data Table 16. PowerSO-10RF formed lead (gull wing) mechanical data Dim. mm. Inch Min Typ Max Min Typ Max A1 0 0.05 0.1 0. 0.0019 0.0038 A2 3.4 3.5 3.6 0.134 0.137 0.142 A3 1.2 1.3 1.4 0.046 0.05 0.054 A4 0.15 0.2 0.25 0.005 0.007 0.009 a 0.2 0.007 b 5.4 5.53 5.65 0.212 0.217 0.221 c 0.23 0.27 0.32 0.008 0.01 0.012 D 9.4 9.5 9.6 0.370 0.374 0.377 D1 7.4 7.5 7.6 0.290 0.295 0.298 E 13.85 14.1 14.35 0.544 0.555 0.565 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 0.294 E3 5.9 6.1 6.3 0.231 0.24 0.247 F 0.5 0.019 G 1.2 0.047 L 0.8 1 1.1 0.030 0.039 0.042 R1 0.25 0.01 R2 0.8 0.031 T 2 deg 5 deg 8 deg 2 deg 5 deg 8 deg T1 6 deg 6 deg T2 10 deg 10 deg Note: Resin protrusions not included (max value: 0.15 mm per side) Doc ID 12273 Rev 4 23/29

Package mechanical data PD55003-E Figure 34. Package dimensions Critical dimensions: - Stand-off (A1) - Overall width (L) Table 17. PowerSO-10RF straight lead mechanical data Dim. mm. Inch Min Typ Max Min Typ Max A1 1.62 1.67 1.72 0.064 0.065 0.068 A2 3.4 3.5 3.6 0.134 0.137 0.142 A3 1.2 1.3 1.4 0.046 0.05 0.054 A4 0.15 0.2 0.25 0.005 0.007 0.009 a 0.2 0.007 b 5.4 5.53 5.65 0.212 0.217 0.221 c 0.23 0.27 0.32 0.008 0.01 0.012 D 9.4 9.5 9.6 0.370 0.374 0.377 D1 7.4 7.5 7.6 0.290 0.295 0.298 E 15.15 15.4 15.65 0.595 0.606 0.615 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 0.294 E3 5.9 6.1 6.3 0.231 0.24 0.247 F 0.5 0.019 G 1.2 0.047 R1 0.25 0.01 R2 0.8 0.031 T1 6 deg 6 deg T2 10 deg 10 deg Note: Resin protrusions not included (max value: 0.15 mm per side) 24/29 Doc ID 12273 Rev 4

PD55003-E Package mechanical data Figure 35. Package dimensions CRITICAL DIMENSIONS: - Overall width (L) Doc ID 12273 Rev 4 25/29

Package mechanical data PD55003-E Figure 36. Tube information 26/29 Doc ID 12273 Rev 4

PD55003-E Package mechanical data Figure 37. Reel information Doc ID 12273 Rev 4 27/29

Revision history PD55003-E 10 Revision history Table 18. Document revision history Date Revision Changes 21-Mar-2006 1 Initial release. 01-Aug-2007 2 Update R in Table4: Static. DS(on) 19-May-2010 3 Added: Table6: Moisture sensitivity level. Added Figure6: Maximum safe operating area. 08-Aug-2011 4 Minor text changes. 28/29 Doc ID 12273 Rev 4

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