PD20015C RF power transistor, LdmoST family Features ■ Excellent thermal stability ■ Common source configuration ■ P = 15 W with 11 dB gain @ 2 GHz / 13.6 V OUT ■ BeO free package ■ ESD protection ■ In compliance with the 2002/95/EC european directive M243 Epoxy sealed Description The PD20015C is a common source N-channel, enhancement-mode lateral field-effect Figure 1. Pin connection RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common 1 source mode at frequencies of up to 2 GHz. PD20015C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. 3 PD20015C’s superior linearity performance makes it an ideal solution for mobile application. 2 1. Drain 3. Source 2. Gate April 2009 Doc ID 14136 Rev 2 1/9 www.st.com 9

Contents PD20015C Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 ESD protection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2/9 Doc ID 14136 Rev 2

PD20015C Electrical data 1 Electrical data 1.1 Maximum ratings T = 25 °C CASE Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 40 V (BR)DSS V Gate-source voltage - 0.5 to 15 V GS I Drain current 7 A D P Power dissipation (@ T = 70 °C) 93 W DISS C T Max. operating junction temperature 200 °C J T Storage temperature -65 to +150 °C STG 1.2 Thermal data Table 3. Thermal data Symbol Parameter Value Unit R Junction - case thermal resistance 1.4 °C/W thJC Doc ID 14136 Rev 2 3/9

Electrical characteristics PD20015C 2 Electrical characteristics T = +25 °C CASE 2.1 Static T able 4. Static Symbol Test conditions Min. Typ. Max. Unit I V = 0 V V = 25 V - 1 (cid:80)A DSS GS DS I V = 5 V V = 0 V - 1 (cid:80)A GSS GS DS V V = 10 V I = 350 mA - 4.2 V GS(Q) DS D V V = 10 V I = 1 A - 270 310 mV DS(ON) GS D C V = 0 V V = 12.5 V f = 1 MHz - 49 pF ISS GS DS C V = 0 V V = 12.5 V f = 1 MHz - 35 pF OSS GS DS C V = 0 V V = 12.5 V f = 1 MHz - 1.0 pF RSS GS DS 2.2 Dynamic T able 5. Dynamic Symbol Test conditions Min. Typ. Max. Unit P3dB V = 13.6 V, I = 350 mA f = 2 GHz 23 - W DD DQ G V = 13.6 V, I = 350 mA, P = 15 W, f = 2 GHz 10 11 - dB P DD DQ OUT h V = 13.6 V, I = 350 mA, P = P3dB, f = 2 GHz 45 53 - % D DD DQ OUT Load V = 15.5 V, I = 350 mA, P = 20 W, f = 2 GHz DD DQ OUT 20:1 - VSWR mismatch All phase angles 2.3 ESD protection characteristics T able 6. ESD protection characteristics Test conditions Class Human body model 2 Machine model M3 4/9 Doc ID 14136 Rev 2

PD20015C Typical performance 3 Typical performance Figure 2. Capacitances vs drain voltage Figure 3. DC output characteristics p 120 6 Crss Coss Ciss Tamb = - 40 °C 100 5 F) 80 4 p e ( Freq = 1 MHz citanc 60 ID[A] 3 a p Ca 40 2 1 20 0 0 0 2 4 6 8 10 12 0 10 20 30 40 50 VDS[V] Vds (V) Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 5.5V Vgs = 6.0V Figure 4. DC output characteristics Figure 5. DC output characteristic 6 6 Tamb = + 20 °C Tamb = + 60 °C 5 5 4 4 ID[A] 3 ID[A]3 2 2 1 1 0 0 0 2 4 6 8 10 12 0 2 4 6 8 10 12 VDS[V] VDS[V] Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 5.5V Vgs = 6.0V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 5.5V Vgs = 6.0V Doc ID 14136 Rev 2 5/9

Typical performance PD20015C Figure 6. Gain and efficiency vs Pout 12 90 11 80 10 70 9 60 db) 8 50 %) ain ( 7 40 Nd ( G 6 Freq = 2 GHz 30 Vdd = 13.6V 5 20 Idq = 350mA 4 10 3 0 0 5 10 15 20 25 30 Gain Eff Pout (W) Figure 7. Gain and efficiency vs Pout 12 90 11 80 10 70 9 60 db) 8 50 %) ain ( 7 40 Nd ( G 6 Freq = 2 GHz 30 Vdd = 12V 5 20 Idq = 350mA 4 10 3 0 0 5 10 15 20 25 Gain Eff Pout (W) 6/9 Doc ID 14136 Rev 2

PD20015C Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. T able 7. M243 (0.230 x 0.360 2L N/HERM W/FLG) mechanical data Dim. mm. Inch Min. Typ. Max. Min. Typ. Max. A 5.21 5.72 0.205 0.225 B 5.46 6.48 0.215 0.255 C 5.59 6.10 0.220 0.240 D 14.27 0.562 E 20.07 20.57 0.790 0.810 F 8.89 9.40 0.350 0.370 G 0.10 0.15 0.004 0.006 H 3.18 4.45 0.125 0.175 I 1.83 2.24 0.072 0.088 J 1.27 1.78 0.050 0.070 Figure 8. Package dimensions Controlling dimension: Inches 1022142E Doc ID 14136 Rev 2 7/9

Revision history PD20015C 5 Revision history Table 8. Document revision history Date Revision Changes 16-Nov-2007 1 Initial release. 14-Apr-2009 2 Updated Table4 on page4 8/9 Doc ID 14136 Rev 2

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