PC715V0NSZXF Series PC715V0NSZXF DIP 6 pin Darlington Phototransistor Output Photocoupler Series ■ Description ■ Agency approvals/Compliance PC715V0NSZXF Series contains an IRED optically 1.Recognized by UL1577 (Double protection isolation), coupled to a phototransistor. file No. E64380 (as model No. PC715V) It is packaged in a 6 pin DIP. 2. Approved by VDE, DIN EN60747-5-2(∗) (as an Input-output isolation voltage(rms) is 5.0kV. option), file No. 40008565 (as model No. PC715V) CTR is MIN. 600% at input current of 1mA. 3. Package resin : UL flammability grade (94V-0) (∗)DIN EN60747-5-2 : successor standard of DIN VDE0884 ■ Features 1. 6 pin DIP package ■ Applications 2. Double transfer mold package (Ideal for Flow Soldering) 1. Home appliances 3. Darlington phototransistor output (CTR : MIN. 600% 2. Programmable controllers at I =1mA, V =2V) 3. Personal computer peripherals F CE 4. High isolation voltage between input and output (V : 5.0kV) iso(rms) 5. Lead-free and RoHS directive compliant NoticeThe content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Sheet No.: D2-A04402EN 1 Date Jun. 30. 2005 © SHARP Corporation

PC715V0NSZXF Series ■ Internal Connection Diagram 1 Anode 1 6 2 Cathode 3 NC 2 5 4 Emitter 3 4 5 Collector 6 NC ■ Outline Dimensions (Unit : mm) 1. Through-Hole [ex. PC715V0NSZXF] 2. Through-Hole (VDE option) [ex. PC715V0YSZXF] 1.2±0.3 1.2±0.3 0.6±0.2 0.6±0.2 VDE Factory SHARP 6 5 4 identification mark SHARP 6 5 4 Identification mark mark mark Factory "S" "S" PC715V PC715V identification mark 5 0.±5 0.5 Anode 6. Anode 4 ±5 mark mark 6. 7.12±0.5 1 2 3 Date code 17.122±0.3 3 Date code 7.62±0.3 7.62±0.3 0.5±9 0.5±3.5 TYP.0.5 0.5±9 0.5±3.5 TYP.0.5 2. 2. Epoxy resin Epoxy resin 2.54±0.25 0.5±0.10.5±25 θ θ 2.54±0.25 0.5±0.10.5±25 θ θ 3. θ : 0 to 13˚ 3. θ : 0 to 13˚ Product mass : approx. 0.36g Product mass : approx. 0.36g Plating material : SnCu (Cu : TYP. 2%) Sheet No.: D2-A04402EN 2

PC715V0NSZXF Series Date code (2 digit) 1st digit 2nd digit Year of production Month of production A.D. Mark A.D Mark Month Mark 1990 A 2002 P January 1 1991 B 2003 R February 2 1992 C 2004 S March 3 1993 D 2005 T April 4 1994 E 2006 U May 5 1995 F 2007 V June 6 1996 H 2008 W July 7 1997 J 2009 X August 8 1998 K 2010 A September 9 1999 L 2011 B October O 2000 M 2012 C November N · · 2001 N ·· ·· December D repeats in a 20 year cycle Factory identification mark Factory identification Mark Country of origin no mark Japan Indonesia China * This factory marking is for identification purpose only. Please Contact the local SHARP sales reprsentative to see the actual status of the production. Rank mark There is no rank mark indicator. Sheet No.: D2-A04402EN 3

PC715V0NSZXF Series ■ Absolute Maximum Ratings (T=25˚C) a Parameter Symbol Rating Unit Forward current I 50 mA F ut *1Peak forward current IFM 1 A p n Reverse voltage V 6 V I R Power dissipation P 70 mW Collector-emitter voltage V 35 V CEO ut Emitter-collector voltage V 6 V p ECO ut Collector current I 80 mA O C Collector power dissipation P 150 mW C Total power dissipation P 170 mW tot Operating temperature T −25 to +100 ˚C opr Storage temperature T −40 to +125 ˚C stg *2Isolation voltage V 5 kV iso (rms) *3Soldering temperature T 260 ˚C sol *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics (T=25˚C) a Parameter Symbol Conditions MIN. TYP. MAX. Unit Forward voltage V I =10mA − 1.2 1.4 V F F Peak forward voltage V I =0.5V − − 3.0 V Input FM FM Reverse current I V =4V − − 10 µA R R Terminal capacitance C V=0, f=1kHz − 30 250 pF t Collector dark current I V =10V, I =0 − − 1 000 nA CEO CE F Output Collector-emitter breakdown voltage BV I =0.1mA, I =0 35 − − V CEO C F Emitter-collector breakdown voltage BV I =10µA, I =0 6 − − V ECO E F Current transfer ratio I I =1mA, V =2V 6.0 16.0 75.0 mA C F CE Collector-emitter saturation voltage V I =20mA, I =5mA − − 1.0 V CE (sat) F C Transfer Isolation resistance RISO DC500V, 40 to 60%RH 5×1010 1×1011 − Ω charac- Floating capacitance C V=0, f=1MHz − 0.6 1.0 pF f teristics Cut-off frequency f V =2V, I =2mA, R =100Ω −3dB − 6 − kHz C CE C L Rise time t − 60 250 µs Response time r V =2V, I =10mA, R =100Ω Fall time t CE C L − 53 250 µs f Sheet No.: D2-A04402EN 4

PC715V0NSZXF Series ■ Model Line-up Lead Form Through-Hole Sleeve Package 50pcs/sleeve DIN EN60747-5-2 −−−−−− Approved Model No. PC715V0NSZXF PC715V0YSZXF Please contact a local SHARP sales representative to inquire about production status. Sheet No.: D2-A04402EN 5

PC715V0NSZXF Series Fig.1 Forward Current vs. Ambient Fig.2 Diode Power Dissipation vs. Ambient Temperature Temperature 60 100 50 W) mA) 40 P (m 80 (F on 70 current I 30 dissipati 60 ard wer 40 w 20 o For de p o Di 20 10 0 0 −25 0 25 5055 75 100 125 −25 0 25 5055 75 100 125 Ambient temperature T (˚C) Ambient temperature Ta (˚C) a Fig.3 Collector Power Dissipation vs. Fig.4 Total Power Dissipation vs. Ambient Ambient Temperature Temperature 200 250 W) m W) 200 ation P (C 150 on P (mtot 115700 er dissip 100 dissipati pow wer 100 or po ollect 50 Total 50 C 0 0 −25 0 25 50 75 100 125 −25 0 25 50 75 100 125 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.5 Peak Forward Current vs. Duty Ratio Fig.6 Forward Current vs. Forward Voltage 10 Pulse width≤100µs Ta=75˚C Ta=25˚C 50˚C 25˚C A) 100 0˚C (M A) urrent IF 1 ent I (mF −25˚C d c urr k forwar 0.1 orward c 10 ea F P 0.01 10−3 10−2 10−1 1 10 0.5 1 1.5 2 2.5 3 3.5 Duty ratio Forward voltage VF (V) Sheet No.: D2-A04402EN 6

PC715V0NSZXF Series Fig.7 Current Transfer Ratio vs. Forward Fig.8 Collector Current vs. Collector- Current emitter Voltage 2 000 16 1 800 VTaC=E2=52˚VC 14 IF=1mA 0.9mA Ta=25˚C R (%) 11 640000 mA) 12 0.8mA PC(MAX.) CT (C 10 er ratio 11 200000 urrent I 8 0.7mA 0.6mA ent transf 860000 ollector c 6 00..54mmAA urr C 4 C 400 0.3mA 2 200 0.1mA 0.2mA 0 0 0.1 1 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 Forward current IF (mA) Collector-emitter voltage VCE (V) Fig.9 Collector Current vs. Collector- Fig.10 Relative Current Transfer Ratio vs. emitter Voltage Ambient Temperature 100 150 Ta=25˚C 90 IF=1mA 80 %) VCE=2V nt I (mA)C 6700 IF=10mA PC (MAX.) nsfer ratio ( 100 curre 50 5mA nt tra ollector 3400 2mA ve curre 50 C ati 20 1mA Rel 10 0 0 0 1 2 3 4 5 −25 0 25 50 75 100 Collector-emitter voltage VCE (V) Ambient temperature Ta (˚C) Fig.11 Collector - emitter Saturation Voltage Fig.12 Collector Dark Current vs. Ambient vs. Ambient Temperature Temperature 1 10−5 (V)SAT) IIFC==250mmAA 10−6 VCE=10V CE( 0.8 A) aturation voltage V 00..46 dark current I (CEO 1100−−87 or-emitter s 0.2 Collector 1100−−109 ct e oll C 0 10−11 −25 0 25 50 75 100 −25 0 25 50 75 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Sheet No.: D2-A04402EN 7

PC715V0NSZXF Series Fig.13 Response Time vs. Load Resistance Fig.14 Test Circuit for Response Time VCE=2V 1 000 ITCa==1205m˚CA VCC Input Output Input RD RL Output t 10% s) f µ e ( t 90% nse tim 100 r VCE tdtr ts tr o p s e R t 10 d Please refer to the conditions in Fig.13 t s 1 0.01 0.1 1 10 Load resistance RL (kΩ) Fig.15 Frequency Response Fig.16 Test Circuit for Frequency Response 10 VCC VCE=2V ITCa==22m5˚AC RL dB) 0 RD Output A (v ain VCE g e oltag −10 RL=10kΩ 1kΩ 100Ω V Please refer to the conditions in Fig.15 −20 0.01 0.1 1 10 100 Frequency f (kHz) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A04402EN 8

PC715V0NSZXF Series ■ Design Considerations ● Design guide While operating at I <1.0mA, CTR variation may increase. F Please make design considering this fact. This product is not designed against irradiation and incorporates non-coherent IRED. ● Degradation In general, the emission of the IRED used in photocouplers will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. ✩ For additional design assistance, please review our corresponding Optoelectronic Application Notes. Sheet No.: D2-A04402EN 9

PC715V0NSZXF Series ■ Manufacturing Guidelines ● Soldering Method Flow Soldering : Due to SHARP's double transfer mold construction submersion in flow solder bath is allowed under the below listed guidelines. Flow soldering should be completed below 270˚C and within 10s. Preheating is within the bounds of 100 to 150˚C and 30 to 80s. Please don't solder more than twice. Hand soldering Hand soldering should be completed within 3s when the point of solder iron is below 400˚C. Please don't solder more than twice. Other notices Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the tooling and soldering conditions. Sheet No.: D2-A04402EN 10

PC715V0NSZXF Series ● Cleaning instructions Solvent cleaning: Solvent temperature should be 45˚C or below Immersion time should be 3 minutes or less Ultrasonic cleaning: The impact on the device varies depending on the size of the cleaning bath, ultrasonic output, cleaning time, size of PCB and mounting method of the device. Therefore, please make sure the device withstands the ultrasonic cleaning in actual conditions in advance of mass production. Recommended solvent materials: Ethyl alcohol, Methyl alcohol and Isopropyl alcohol In case the other type of solvent materials are intended to be used, please make sure they work fine in actual using conditions since some materials may erode the packaging resin. ● Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). •Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). Sheet No.: D2-A04402EN 11

PC715V0NSZXF Series ■ Package specification ● Sleeve package Package materials Sleeve : HIPS (with anti-static material) Stopper : Styrene-Elastomer Package method MAX. 50 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. The product shall be arranged in the sleeve with its anode mark on the tabless stopper side. MAX. 20 sleeves in one case. Sleeve outline dimensions 12.0 520±2 8 0. 1 8 5. 6.7 (Unit : mm) Sheet No.: D2-A04402EN 12

PC715V0NSZXF Series ■ Important Notices · The circuit application examples in this publication are with equipment that requires higher reliability such as: provided to explain representative applications of --- Transportation control and safety equipment (i.e., SHARP devices and are not intended to guarantee any aircraft, trains, automobiles, etc.) circuit design or license any intellectual property rights. --- Traffic signals SHARP takes no responsibility for any problems rela- --- Gas leakage sensor breakers ted to any intellectual property right of a third party re- --- Alarm equipment sulting from the use of SHARP's devices. --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in connec- · Contact SHARP in order to obtain the latest device tion with equipment that requires an extremely high lev- specification sheets before using any SHARP device. el of reliability and safety such as: SHARP reserves the right to make changes in the spec- --- Space applications ifications, characteristics, data, materials, structure, --- Telecommunication equipment [trunk lines] and other contents described herein at any time without --- Nuclear power control equipment notice in order to improve design or reliability. Manufac- --- Medical and other life support equipment (e.g., turing locations are also subject to change without no- scuba). tice. · If the SHARP devices listed in this publication fall with- · Observe the following points when using any devices in the scope of strategic products described in the For- in this publication. SHARP takes no responsibility for eign Exchange and Foreign Trade Law of Japan, it is damage caused by improper use of the devices which necessary to obtain approval to export such SHARP de- does not meet the conditions and absolute maximum vices. ratings to be used specified in the relevant specification sheet nor meet the following conditions: · This publication is the proprietary product of SHARP (i) The devices in this publication are designed for use and is copyrighted, with all rights reserved. Under the in general electronic equipment designs such as: copyright laws, no part of this publication may be repro- --- Personal computers duced or transmitted in any form or by any means, elec- --- Office automation equipment tronic or mechanical, for any purpose, in whole or in --- Telecommunication equipment [terminal] part, without the express written permission of SHARP. --- Test and measurement equipment Express written permission is also required before any --- Industrial control use of this publication may be made by a third party. --- Audio visual equipment --- Consumer electronics · Contact and consult with a SHARP representative if (ii) Measures such as fail-safe function and redundant there are any questions about the contents of this pub- design should be taken to ensure reliability and safety lication. when SHARP devices are used for or in connection [E220] Sheet No.: D2-A04402EN 13