Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

PBSS5620PA 20 V, 6 A PNP low V (BISS) transistor CEsat Rev. 01 — 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal(BISS) transistor, encapsulated in an ultra CEsat thin SOT1061 leadless small Surface-Mounted Device(SMD) plastic package with medium power capability. NPN complement: PBSS4620PA. 1.2 Features and benefits (cid:132) Low collector-emitter saturation voltage V CEsat (cid:132) High collector current capability I and I C CM (cid:132) Smaller required Printed-Circuit Board(PCB) area than for conventional transistors (cid:132) Exposed heat sink for excellent thermal and electrical conductivity (cid:132) Leadless small SMD plastic package with medium power capability 1.3 Applications (cid:132) Loadswitch (cid:132) Battery-driven devices (cid:132) Power management (cid:132) Charging circuits (cid:132) Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - −20 V CEO I collector current - - −6 A C I peak collector current single pulse; - - −7 A CM t ≤1ms p R collector-emitter I =−6A; [1] - 39 58 mΩ CEsat C saturation resistance I =−300mA B [1] Pulse test: tp≤300μs; δ≤0.02.

PBSS5620PA NXP Semiconductors 20 V, 6 A PNP low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 2 emitter 3 3 3 collector 1 2 1 2 sym013 Transparent top view 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5620PA HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061 no leads; threeterminals; body2×2×0.65mm 4. Marking Table 4. Marking codes Type number Marking code PBSS5620PA AA 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - −20 V CBO V collector-emitter voltage open base - −20 V CEO V emitter-base voltage open collector - −7 V EBO I collector current - −6 A C I peak collector current single pulse; - −7 A CM t ≤1ms p I base current - −600 mA B P total power dissipation T ≤25°C [1] - 500 mW tot amb [2] - 1 W [3] - 1.4 W [4] - 2.1 W PBSS5620PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 13 April 2010 2 of 15

PBSS5620PA NXP Semiconductors 20 V, 6 A PNP low V (BISS) transistor CEsat Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit T junction temperature - 150 °C j T ambient temperature −55 +150 °C amb T storage temperature −65 +150 °C stg [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2. [4] Device mounted on a ceramicPCB, Al O , standard footprint. 2 3 006aab978 2.5 Ptot (W) (1) 2.0 1.5 (2) (3) 1.0 (4) 0.5 0.0 −75 −25 25 75 125 175 Tamb (°C) (1) CeramicPCB, Al O , standard footprint 2 3 (2) FR4PCB, mounting pad for collector 6cm2 (3) FR4PCB, mounting pad for collector 1cm2 (4) FR4PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air [1] - - 250 K/W th(j-a) junction to ambient [2] - - 125 K/W [3] - - 90 K/W [4] - - 60 K/W [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2. [4] Device mounted on a ceramicPCB, Al O , standard footprint. 2 3 PBSS5620PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 13 April 2010 3 of 15

PBSS5620PA NXP Semiconductors 20 V, 6 A PNP low V (BISS) transistor CEsat 103 006aab979 Zth(j-a) duty cycle = 1 (K/W) 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 006aab980 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4PCB, mounting pad for collector 1cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5620PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 13 April 2010 4 of 15

PBSS5620PA NXP Semiconductors 20 V, 6 A PNP low V (BISS) transistor CEsat 103 006aab981 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4PCB, mounting pad for collector 6cm2 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 006aab982 duty cycle = 1 Zth(j-a) 0.75 (K/W) 0.5 0.33 10 0.2 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) CeramicPCB, Al O , standard footprint 2 3 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5620PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 13 April 2010 5 of 15

PBSS5620PA NXP Semiconductors 20 V, 6 A PNP low V (BISS) transistor CEsat 7. Characteristics Table 7. Characteristics T =25°C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit I collector-base V =−16V; I =0A - - −100 nA CBO CB E cut-offcurrent V =−16V; I =0A; - - −50 μA CB E T =150°C j I collector-emitter V =−16V; V =0V - - −100 nA CES CE BE cut-offcurrent I emitter-base V =−5V; I =0A - - −100 nA EBO EB C cut-offcurrent h DC current gain V =−2V [1] FE CE I =−0.5A 230 345 - C I =−1A 220 320 - C I =−2A 190 275 - C I =−6A 110 155 - C V collector-emitter I =−0.5A; I =−50mA [1] - −25 −40 mV CEsat C B saturation voltage I =−1A; I =−50mA [1] - −50 −80 mV C B I =−1A; I =−10mA [1] - −80 −130 mV C B I =−2A; I =−20mA [1] - −135 −210 mV C B I =−3A; I =−30mA [1] - −215 −325 mV C B I =−4A; I =−400mA [1] - −150 −230 mV C B I =−6A; I =−300mA [1] - −235 −350 mV C B R collector-emitter I =−6A; I =−300mA [1] - 39 58 mΩ CEsat C B saturation resistance V base-emitter I =−1A; I =−10mA [1] - −0.75 −0.9 V BEsat C B saturationvoltage I =−6A; I =−300mA [1] - −1.03 −1.1 V C B V base-emitter V =−2V; I =−2A [1] - −0.76 −0.9 V BEon CE C turn-onvoltage t delay time V =−9V; I =−2A; - 19 - ns d CC C I =−0.1A; t rise time Bon - 59 - ns r I =0.1A Boff t turn-on time - 78 - ns on t storage time - 265 - ns s t fall time - 55 - ns f t turn-off time - 320 - ns off f transition frequency V =−10V; 50 80 - MHz T CE I =−100mA; C f=100MHz C collector capacitance V =−10V; - 75 90 pF c CB I =i =0A; f=1MHz E e [1] Pulse test: tp≤300μs; δ≤0.02. PBSS5620PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 13 April 2010 6 of 15

PBSS5620PA NXP Semiconductors 20 V, 6 A PNP low V (BISS) transistor CEsat 600 006aab991 −8.0 006aab992 (1) IB (mA) = −50 IC −45 hFE (A) −6.0 −40 −35 400 (2) −30 −25 −4.0 −20 −15 (3) 200 −10 −2.0 −5 0 0.0 −10−1 −1 −10 −102 −103 −104 0.0 −1.0 −2.0 −3.0 −4.0 −5.0 IC (mA) VCE (V) VCE=−2V Tamb=25°C (1) Tamb=100°C (2) Tamb=25°C (3) Tamb=−55°C Fig 6. DC current gain as a function of collector Fig 7. Collector current as a function of current; typical values collector-emitter voltage; typical values −1.2 006aab993 −1.2 006aab994 VBE VBEsat (V) (V) (1) (1) −0.8 −0.8 (2) (2) (3) (3) −0.4 −0.4 0.0 0.0 −10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104 IC (mA) IC (mA) VCE=−2V IC/IB=20 (1) Tamb=−55°C (1) Tamb=−55°C (2) Tamb=25°C (2) Tamb=25°C (3) Tamb=100°C (3) Tamb=100°C Fig 8. Base-emitter voltage as a function of collector Fig 9. Base-emitter saturation voltage as a function current; typical values of collector current; typical values PBSS5620PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 13 April 2010 7 of 15

PBSS5620PA NXP Semiconductors 20 V, 6 A PNP low V (BISS) transistor CEsat −1 006aab995 −1 006aab996 VCEsat VCEsat (V) (V) −10−1 −10−1 (1) (2) (1) (3) (2) −10−2 −10−2 (3) −10−3 −10−3 −10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104 IC (mA) IC (mA) IC/IB=20 Tamb=25°C (1) Tamb=100°C (1) IC/IB=100 (2) Tamb=25°C (2) IC/IB=50 (3) Tamb=−55°C (3) IC/IB=10 Fig 10. Collector-emitter saturation voltage as a Fig 11. Collector-emitter saturation voltage as a function of collector current; typical values function of collector current; typical values 103 006aab997 103 006aab998 RCEsat RCEsat (Ω) (Ω) 102 102 10 10 (1) 1 1 (2) (1) (2) 10−1 (3) 10−1 (3) 10−2 10−2 −10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104 IC (mA) IC (mA) IC/IB=20 Tamb=25°C (1) Tamb=100°C (1) IC/IB=100 (2) Tamb=25°C (2) IC/IB=50 (3) Tamb=−55°C (3) IC/IB=10 Fig 12. Collector-emitter saturation resistance as a Fig 13. Collector-emitter saturation resistance as a function of collector current; typical values function of collector current; typical values PBSS5620PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 13 April 2010 8 of 15

PBSS5620PA NXP Semiconductors 20 V, 6 A PNP low V (BISS) transistor CEsat 8. Test information −IB 90 % input pulse (idealized waveform) −IBon (100 %) 10 % −IBoff output pulse −IC (idealized waveform) 90 % −IC (100 %) 10 % t td tr ts tf ton toff 006aaa266 Fig 14. BISS transistor switching time definition VBB VCC RB RC (probe) Vo (probe) oscilloscope oscilloscope 450 Ω 450 Ω R2 VI DUT R1 mgd624 VCC=−9V; IC=−2A; IBon=−0.1A; IBoff=0.1A Fig 15. Test circuit for switching times PBSS5620PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 13 April 2010 9 of 15

PBSS5620PA NXP Semiconductors 20 V, 6 A PNP low V (BISS) transistor CEsat 9. Package outline 1.3 0.35 0.65 0.25 max 0.45 1 2 1.05 0.35 0.95 2.1 1.1 1.9 0.9 0.3 0.2 3 1.6 1.4 2.1 1.9 Dimensions in mm 09-11-12 Fig 16. Package outline SOT1061 (HUSON3) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 PBSS5620PA SOT1061 4mm pitch, 8mm tape and reel -115 [1] For further information and the availability of packing methods, see Section14. PBSS5620PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 13 April 2010 10 of 15

PBSS5620PA NXP Semiconductors 20 V, 6 A PNP low V (BISS) transistor CEsat 11. Soldering 2.1 1.3 0.5 (2×) 0.4 (2×) 0.5 (2×) 0.6 (2×) 1.05 2.3 0.6 0.55 0.25 1.1 1.2 0.25 0.25 0.4 0.5 1.6 1.7 solder paste = solder lands Dimensions in mm solder resist occupied area sot1061_fr Reflow soldering is the only recommended soldering method. Fig 17. Reflow soldering footprint SOT1061(HUSON3) PBSS5620PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 13 April 2010 11 of 15

PBSS5620PA NXP Semiconductors 20 V, 6 A PNP low V (BISS) transistor CEsat 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS5620PA_1 20100413 Product data sheet - - PBSS5620PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 13 April 2010 12 of 15

PBSS5620PA NXP Semiconductors 20 V, 6 A PNP low V (BISS) transistor CEsat 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 13.2 Definitions malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of Draft — The document is a draft version only. The content is still under NXP Semiconductors products in such equipment or applications and internal review and subject to formal approval, which may result in therefore such inclusion and/or use is at the customer’s own risk. modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of Applications — Applications that are described herein for any of these information included herein and shall have no liability for the consequences of products are for illustrative purposes only. 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This document supersedes and replaces all information supplied prior Non-automotive qualified products — Unless this data sheet expressly to the publication hereof. states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested Suitability for use — NXP Semiconductors products are not designed, in accordance with automotive testing or application requirements. NXP authorized or warranted to be suitable for use in medical, military, aircraft, Semiconductors accepts no liability for inclusion and/or use of space or life support equipment, nor in applications where failure or non-automotive qualified products in automotive equipment or applications. PBSS5620PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 13 April 2010 13 of 15

PBSS5620PA NXP Semiconductors 20 V, 6 A PNP low V (BISS) transistor CEsat In the event that customer uses the product for design-in and use in liability, damages or failed product claims resulting from customer design and automotive applications to automotive specifications and standards, customer use of the product for automotive applications beyond NXP Semiconductors’ (a) shall use the product without NXP Semiconductors’ warranty of the standard warranty and NXP Semiconductors’ product specifications. product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 13.4 Trademarks NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PBSS5620PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 13 April 2010 14 of 15

PBSS5620PA NXP Semiconductors 20 V, 6 A PNP low V (BISS) transistor CEsat 15. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 13 April 2010 Document identifier: PBSS5620PA_1