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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low V (BISS) transistor CEsat Product data sheet 2004 Nov 04 Supersedes data of 2003 Nov 21

NXP Semiconductors Product data sheet 50 V, 3 A PBSS5350X PNP low V (BISS) transistor CEsat FEATURES QUICK REFERENCE DATA • SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT • Low collector-emitter saturation voltage V CEsat V collector-emitter voltage −50 V CEO • High collector current capability: IC and ICM IC collector current (DC) −3 A • Higher efficiency leading to less heat generation I peak collector current −5 A CM • Reduced printed-circuit board requirements. R equivalent on-resistance 135 mΩ CEsat APPLICATIONS PINNING • Power management PIN DESCRIPTION – DC/DC converters 1 emitter – Supply line switching 2 collector – Battery charger 3 base – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load driver (e.g. relays, buzzers and motors). 2 3 DESCRIPTION PNP low V transistor in a SOT89 plastic package. 1 CEsat NPN complement: PBSS4350X. sym079 3 2 1 MARKING TYPE NUMBER MARKING CODE Fig.1 Simplified outline (SOT89) and symbol. PBSS5350X S46 2004 Nov 04 2

NXP Semiconductors Product data sheet 50 V, 3 A PBSS5350X PNP low V (BISS) transistor CEsat ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PBSS5350X SC-62 plastic surface mounted package; collector pad for good heat SOT89 transfer; 3 leads LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter − −50 V CBO V collector-emitter voltage open base − −50 V CEO V emitter-base voltage open collector − −5 V EBO I collector current (DC) note 4 − −3 A C I peak collector current limited by T − −5 A CM j(max) I base current (DC) − −0.5 A B P total power dissipation T ≤ 25 °C tot amb note 1 − 550 mW note 2 − 1 W note 3 − 1.4 W note 4 − 1.6 W T storage temperature −65 +150 °C stg T junction temperature − 150 °C j T ambient temperature −65 +150 °C amb Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated. 2004 Nov 04 3

NXP Semiconductors Product data sheet 50 V, 3 A PBSS5350X PNP low V (BISS) transistor CEsat MLE186 2 handbook, halfpage Ptot (W) (1) 1.6 (2) 1.2 (3) 0.8 (4) 0.4 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB; 7 cm2 (3) FR4 PCB; 1 cm2 copper mounting pad for collector. mounting pad for collector. (2) FR4 PCB; 6 cm2 copper (4) Standard footprint. mounting pad for collector. Fig.2 Power derating curves. 2004 Nov 04 4

NXP Semiconductors Product data sheet 50 V, 3 A PBSS5350X PNP low V (BISS) transistor CEsat THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient in free air th(j-a) note 1 225 K/W note 2 125 K/W note 3 90 K/W note 4 80 K/W R thermal resistance from junction to soldering point 16 K/W th(j-s) Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated. 103 006aaa243 Zth(j-a) duty cycle = (K/W) 1.00 0.75 102 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; standard footprint. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 04 5

NXP Semiconductors Product data sheet 50 V, 3 A PBSS5350X PNP low V (BISS) transistor CEsat 103 006aaa244 Zth(j-a) (K/W) duty cycle = 1.00 102 0.75 0.50 0.33 0.20 0.10 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 103 006aaa245 Zth(j-a) (K/W) duty cycle = 102 1.00 0.75 0.50 0.33 0.20 10 0.10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 04 6

NXP Semiconductors Product data sheet 50 V, 3 A PBSS5350X PNP low V (BISS) transistor CEsat CHARACTERISTICS T = 25 °C unless otherwise specified. amb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I collector-base cut-off current V = −50 V; I = 0 A − − −100 nA CBO CB E V = −50 V; I = 0 A; T = 150 °C − − −50 μA CB E j I collector-emitter cut-off current V = −50 V; V = 0 V − − −100 nA CES CE BE I emitter-base cut-off current V = −5 V; I = 0 A − − −100 nA EBO EB C h DC current gain V = −2 V FE CE I = −0.1 A 200 − − C I = −0.5 A 200 − − C I = −1 A; note 1 200 − 450 C I = −2 A; note 1 130 − − C I = −3 A; note 1 80 − − C V collector-emitter saturation I = −0.5 A; I = −50 mA − − −90 mV CEsat C B voltage I = −1 A; I = −50 mA − − −180 mV C B I = −2 A; I = −100 mA − − −320 mV C B I = −2 A; I = −200 mA; note 1 − − −270 mV C B I = −3 A; I = −300 mA; note 1 − − −390 mV C B R equivalent on-resistance I = −2 A; I = −200 mA; note 1 − 90 135 mΩ CEsat C B V base-emitter saturation voltage I = −2 A; I = −100 mA − − −1.1 V BEsat C B I = −3 A; I = −300 mA; note 1 − − −1.2 V C B V base-emitter turn-on voltage V = −2 V; I = −1 A −1.1 − − V BEon CE C f transition frequency I = −100 mA; V = −5 V; 100 − − MHz T C CE f = 100 MHz C collector capacitance V = −10 V; I = i = 0 A; f = 1 MHz − − 35 pF c CB E e Note 1. Pulse test: t ≤ 300 μs; δ ≤ 0.02. p 2004 Nov 04 7

NXP Semiconductors Product data sheet 50 V, 3 A PBSS5350X PNP low V (BISS) transistor CEsat 600 MLE171 −1.2 MLE170 handbook, halfpage handbook, halfpage (1) hFE VBE (V) (1) 400 (2) −0.8 (2) (3) 200 (3) −0.4 0 0 −10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104 IC (mA) IC (mA) VCE = −2 V. VCE = −2 V. (1) Tamb = 100 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 100 °C. Fig.6 DC current gain as a function of collector Fig.7 Base-emitter voltage as a function of current; typical values. collector current; typical values. MLE173 MLE174 −1 −1 handbook, halfpage handbook, halfpage VCEsat VCEsat (V) (V) −10−1 −10−1 (1) (2) (2) (1) −10−2 (3) −10−2 (3) −10−3 −10−3 −10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104 IC (mA) IC (mA) IC/IB = 20. Tamb = 25 °C. (1) Tamb = 100 °C. (1) IC/IB = 100. (2) Tamb = 25 °C. (2) IC/IB = 50. (3) Tamb = −55 °C. (3) IC/IB = 10. Fig.8 Collector-emitter saturation voltage as a Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. function of collector current; typical values. 2004 Nov 04 8

NXP Semiconductors Product data sheet 50 V, 3 A PBSS5350X PNP low V (BISS) transistor CEsat −1.2 MLE175 103 MLE172 handVbBooEks, ahtalfpage handRbCooEks, haatlfpage (Ω) (V) −1 102 (1) −0.8 (2) 10 (3) −0.6 1 (1) (2) −0.4 10−1 (3) −0.−210−1 −1 −10 −102 −103 −104 10−−210−1 −1 −10 −102 −103 −104 IC (mA) IC (mA) IC/IB = 20. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.10 Base-emitter saturation voltage as a Fig.11 Equivalent on-resistance as a function of function of collector current; typical values. collector current; typical values. MLE168 MLE169 −1 −5 handbookIC, halfpage (1) handbookIC, halfpage (7) (6) (5) (4) (3) (2) (1) (A) (2) (A) −0.8 (3) −4 (4) (5) −0.6 −3 (8) (6) (9) (7) −0.4 (8) −2 (10) (9) −0.2 −1 (10) 0 0 0 −0.4 −0.8 −1.2 −1.6 −2 0 −0.4 −0.8 −1.2 −1.6 −2 VCE (V) VCE (V) Tamb = 25 °C. Tamb = 25 °C. (1) IB = −3500 μA. (5) IB = −2100 μA. (9) IB = −700 μA. (1) IB = −140 mA. (5) IB = −84 mA. (9) IB = −28 mA. (2) IB = −3150 μA. (6) IB = −1750 μA. (10)IB = −350 μA. (2) IB = −126 mA. (6) IB = −70 mA. (10)IB = −14 mA. (3) IB = −2800 μA. (7) IB = −1400 μA. (3) IB = −112 mA. (7) IB = −56 mA. (4) IB = −2450 μA. (8) IB = −1050 μA. (4) IB = −98 mA. (8) IB = −42 mA. Fig.12 Collector current as a function of Fig.13 Collector current as a function of collector-emitter voltage; typical values. collector-emitter voltage; typical values. 2004 Nov 04 9

NXP Semiconductors Product data sheet 50 V, 3 A PBSS5350X PNP low V (BISS) transistor CEsat PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 D B A bp3 E HE Lp 1 2 3 bp2 c w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w 1.6 0.48 0.53 1.8 0.44 4.6 2.6 4.25 1.2 mm 3.0 1.5 0.13 1.4 0.35 0.40 1.4 0.23 4.4 2.4 3.75 0.8 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-08-03 SOT89 TO-243 SC-62 06-03-16 2004 Nov 04 10

NXP Semiconductors Product data sheet 50 V, 3 A PBSS5350X PNP low V (BISS) transistor CEsat DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Nov 04 11

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp12 Date of release: 2004 Nov 04 Document order number: 9397 750 13889