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DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 PBSS5250T 50 V, 2 A PNP low V (BISS) transistor CEsat Product data sheet 2003 Oct 09

NXP Semiconductors Product data sheet 50 V, 2 A PBSS5250T PNP low V (BISS) transistor CEsat QUICK REFERENCE DATA FEATURES • Low collector-emitter saturation voltage V SYMBOL PARAMETER MAX. UNIT CEsat • High collector current capability: IC and ICM VCEO collector-emitter voltage −50 V • Higher efficiency leading to less heat generation IC collector current (DC) −2 A • Reduced printed-circuit board requirements ICM peak collector current −3 A • Cost effective alternative to MOSFETs in specific RCEsat equivalent on-resistance 150 mΩ applications. PINNING APPLICATIONS PIN DESCRIPTION • Power management 1 base 2 emitter – DC/DC converters 3 collector – Supply line switching – Battery charger – LCD backlighting • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps handbook, halfpage 3 and LEDs) 3 – Inductive load driver (e.g. relays, buzzers and motors). 1 DESCRIPTION 2 1 2 PNP BISS transistor in a SOT23 plastic package offering ultra low V and R parameters. CEsat CEsat Top view MAM256 MARKING TYPE NUMBER MARKING CODE(1) Fig.1 Simplified outline (SOT23) and symbol. PBSS5250T 3H* Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PBSS5250T − plastic surface mounted package; 3 leads SOT23 2003 Oct 09 2

NXP Semiconductors Product data sheet 50 V, 2 A PBSS5250T PNP low V (BISS) transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter − −50 V CBO V collector-emitter voltage open base − −50 V CEO V emitter-base voltage open collector − −5 V EBO I collector current (DC) − −2 A C I peak collector current single peak − −3 A CM I base current (DC) − −300 mA B P total power dissipation T ≤ 25 °C; note 1 300 mW tot amb T ≤ 25 °C; note 2 − 480 mW amb T junction temperature − 150 °C j T operating ambient temperature −65 +150 °C amb T storage temperature −65 +150 °C stg Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient in free air; note 1 417 K/W th j-a in free air; note 2 260 K/W Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2. 2003 Oct 09 3

NXP Semiconductors Product data sheet 50 V, 2 A PBSS5250T PNP low V (BISS) transistor CEsat CHARACTERISTICS T = 25 °C; unless otherwise specified. j SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I collector cut-off current V = −50 V; I = 0 − − −100 nA CBO CB E V = −50 V; I = 0; T = 150 °C − − −50 μA CB E j I emitter cut-off current V = −5 V; I = 0 − − −100 nA EBO EB C h DC current gain V = −2 V; I = 0.5 A 200 − − FE CE C V = −2 V; I = 1 A; note 1 200 − − CE C V = −2 V; I = 2 A; note 1 130 − − CE C V collector-emitter saturation I = −0.5 A; I = −50 mA − − −90 mV CEsat C B voltage I = −1 A; I = −50 mA − − −180 mV C B I = −2 A; I = −100 mA − − −300 mV C B R equivalent on-resistance I = −2 A; I = −200 mA; note 1 − − 150 mΩ CEsat C B V base-emitter saturation voltage I = −2 A; I = −100 mA; note 1 − − −1.1 V BEsat C B V base-emitter turn-on voltage V = −2 V; I = −1 A; note 1 −1.2 − − V BEon CE C f transition frequency I = −100 mA; V = −5 V; 100 − − MHz T C CE f = 100 MHz C collector capacitance V = −10 V; I = I = 0; f = 1 MHz − − 35 pF c CB E e Note 1. Pulse test: t ≤ 300 μs; δ ≤ 0.02. p 2003 Oct 09 4

NXP Semiconductors Product data sheet 50 V, 2 A PBSS5250T PNP low V (BISS) transistor CEsat PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D B E A X HE v M A 3 Q A A1 1 2 c e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x. bp c D E e e1 HE Lp Q v w 1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55 mm 0.1 1.9 0.95 0.2 0.1 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION 97-02-28 SOT23 TO-236AB 99-09-13 2003 Oct 09 5

NXP Semiconductors Product data sheet 50 V, 2 A PBSS5250T PNP low V (BISS) transistor CEsat DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2003 Oct 09 6

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/01/pp7 Date of release: 2003 Oct 09 Document order number: 9397 750 11904