Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

PBSS5160DS 60 V, 1 A PNP/PNP low V (BISS) transistor CEsat Rev. 03 — 9 October 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP low V Breakthrough In Small Signal (BISS) transistor pair in a small CEsat SOT457(SC-74) Surface-Mounted Device (SMD) plastic package. NPNcomplement:PBSS4160DS. 1.2 Features n Low collector-emitter saturation voltage V CEsat n High collector current capability I and I C CM n High collector current gain (h ) at high I FE C n High efficiency due to less heat generation n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications n Dual low power switches (e.g. motors, fans) n Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - - 60 V CEO I collector current [1] - - - 1 A C I peak collector current single pulse; - - - 2 A CM t £ 1ms p R collector-emitter saturation I =- 1A; [2] - 250 330 mW CEsat C resistance I =- 100mA B [1] Device mounted on a ceramic PCB, Al O , standard footprint. 2 3 [2] Pulse test: t £ 300m s;d£ 0.02. p

PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 collector TR2 TR2 4 emitter TR2 TR1 1 2 3 5 base TR2 1 2 3 6 collector TR1 sym018 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5160DS SC-74 plastic surface-mounted package (TSOP6); 6leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PBSS5160DS A5 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - - 80 V CBO V collector-emitter open base - - 60 V CEO voltage V emitter-base voltage open collector - - 5 V EBO I collector current [1] - - 0.77 A C [2] - - 0.9 A [3] - - 1 A I peak collector current single pulse; t £ 1ms - - 2 A CM p I base current - - 300 mA B I peak base current single pulse; t £ 1ms - - 1 A BM p PBSS5160DS_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 9 October 2008 2 of 14

PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low V (BISS) transistor CEsat Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit P total power dissipation T £ 25(cid:176) C [1] - 290 mW tot amb [2] - 370 mW [3] - 450 mW Per device P total power dissipation T £ 25(cid:176) C [1] - 420 mW tot amb [2] - 560 mW [3] - 700 mW T junction temperature - 150 (cid:176) C j T ambient temperature - 65 +150 (cid:176) C amb T storage temperature - 65 +150 (cid:176) C stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on a ceramic PCB, Al O , standard footprint. 2 3 006aaa493 800 Ptot (1) (mW) 600 (2) (3) 400 200 0 0 40 80 120 160 Tamb ((cid:176)C) (1) Ceramic PCB, Al O , standard footprint 2 3 (2) FR4 PCB, mounting pad for collector 1cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PBSS5160DS_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 9 October 2008 3 of 14

PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low V (BISS) transistor CEsat 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor R thermal resistance from in free air [1] - - 431 K/W th(j-a) junction to ambient [2] - - 338 K/W [3] - - 278 K/W R thermal resistance from - - 105 K/W th(j-sp) junction to solder point Per device R thermal resistance from in free air [1] - - 298 K/W th(j-a) junction to ambient [2] - - 223 K/W [3] - - 179 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on a ceramic PCB, Al O , standard footprint. 2 3 103 006aaa494 d = 1 Zth(j-a) (K/W) 0.75 0.50 0.33 102 0.20 0.10 0.05 10 0.02 0.01 0 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5160DS_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 9 October 2008 4 of 14

PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low V (BISS) transistor CEsat 103 006aaa495 Zth(j-a) d = 1 (K/W) 0.75 0.50 102 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 006aaa496 Zth(j-a) d = 1 (K/W) 0.75 0.50 102 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 103 tp (s) Ceramic PCB, Al O , standard footprint 2 3 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5160DS_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 9 October 2008 5 of 14

PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low V (BISS) transistor CEsat 7. Characteristics Table 7. Characteristics T =25(cid:176) C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit Per transistor I collector-base cut-off V =- 60V; I =0A - - - 100 nA CBO CB E current V =- 60V; I =0A; - - - 50 m A CB E T =150(cid:176) C j I collector-emittercut-off V =- 60V; V =0V - - - 100 nA CES CE BE current I emitter-base cut-off V =- 5V; I =0A - - - 100 nA EBO EB C current h DCcurrent gain V =- 5V; I =- 1mA 200 350 - FE CE C V =- 5V; I =- 500mA [1] 150 250 - CE C V =- 5V; I =- 1A [1] 100 160 - CE C V collector-emitter I =- 100mA; I =- 1mA - - 110 - 165 mV CEsat C B saturation voltage I =- 500mA; I =- 50mA - - 120 - 175 mV C B I =- 1A; I =- 100mA [1] - - 250 - 330 mV C B V base-emittersaturation I =- 1A; I =- 50mA [1] - - 0.95 - 1.1 V BEsat C B voltage R collector-emitter I =- 1A; I =- 100mA [1] - 250 330 mW CEsat C B saturation resistance V base-emitter turn-on I =- 1A; V =- 5V [1] - - 0.82 - 0.9 V BEon C CE voltage t delay time I =- 0.5A;I =- 25mA; - 11 - ns d C Bon I =25mA t rise time Boff - 30 - ns r t turn-on time - 41 - ns on t storage time - 205 - ns s t fall time - 55 - ns f t turn-off time - 260 - ns off f transition frequency V =- 10V; I =- 50mA; 150 185 - MHz T CE C f=100MHz C collector capacitance V =- 10V; I =i =0A; - 9 15 pF c CB E e f=1MHz [1] Pulse test: t £ 300m s;d£ 0.02. p PBSS5160DS_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 9 October 2008 6 of 14

PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low V (BISS) transistor CEsat 600 006aaa474 - 2.0 006aaa478 IB (mA) = - 35.0 (1) IC - 31.5 hFE (A) - 28.0 - 1.6 - 24.5 - 17.5 - 21.0 - 14.0 400 (2) - 10.5 - 1.2 - 7.0 - 0.8 - 3.5 200 (3) - 0.4 0 0.0 - 10- 1 - 1 - 10 - 102 - 103 - 104 0 - 1 - 2 - 3 - 4 - 5 IC (mA) VCE (V) V =- 5V T =25(cid:176) C CE amb (1) T =100(cid:176) C amb (2) T =25(cid:176) C amb (3) T =- 55(cid:176) C amb Fig 5. DC current gain as a function of collector Fig 6. Collector current as a function of current; typical values collector-emitter voltage; typical values - 1.0 006aaa476 - 1.1 006aaa477 VBE VB(VEs)at (V) - 0.9 - 0.8 (1) (1) - 0.7 (2) (2) - 0.6 - 0.5 (3) (3) - 0.4 - 0.3 - 0.2 - 0.1 - 10- 1 - 1 - 10 - 102 - 103 - 104 - 10- 1 - 1 - 10 - 102 - 103 - 104 IC (mA) IC (mA) V =- 5V I /I =20 CE C B (1) T =- 55(cid:176) C (1) T =- 55(cid:176) C amb amb (2) T =25(cid:176) C (2) T =25(cid:176) C amb amb (3) T =100(cid:176) C (3) T =100(cid:176) C amb amb Fig 7. Base-emittervoltageasafunctionofcollector Fig 8. Base-emitter saturation voltage as a function current; typical values of collector current; typical values PBSS5160DS_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 9 October 2008 7 of 14

PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low V (BISS) transistor CEsat - 1 006aaa489 - 1 006aaa490 VCEsat VCEsat (V) (V) - 10- 1 - 10- 1 (1) (1) (2) (2) (3) (3) - 10- 2 - 10- 2 - 10- 1 - 1 - 10 - 102 - 103 - 104 - 10- 1 - 1 - 10 - 102 - 103 - 104 IC (mA) IC (mA) I /I =20 T =25(cid:176) C C B amb (1) T =100(cid:176) C (1) I /I =100 amb C B (2) T =25(cid:176) C (2) I /I =50 amb C B (3) T =- 55(cid:176) C (3) I /I =10 amb C B Fig 9. Collector-emitter saturation voltage as a Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values function of collector current; typical values 103 006aaa491 103 006aaa492 RCEsat RCEsat (W ) (W ) 102 102 10 10 (1) (1) (2) 1 (2) 1 (3) (3) 10- 1 10- 1 - 10- 1 - 1 - 10 - 102 - 103 - 104 - 10- 1 - 1 - 10 - 102 - 103 - 104 IC (mA) IC (mA) I /I =20 T =25(cid:176) C C B amb (1) T =100(cid:176) C (1) I /I =100 amb C B (2) T =25(cid:176) C (2) I /I =50 amb C B (3) T =- 55(cid:176) C (3) I /I =10 amb C B Fig 11. Collector-emitter saturation resistance as a Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values function of collector current; typical values PBSS5160DS_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 9 October 2008 8 of 14

PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low V (BISS) transistor CEsat 8. Test information - IB 90 % input pulse (idealized waveform) - IBon (100 %) 10 % - IBoff output pulse - IC (idealized waveform) 90 % - IC (100 %) 10 % t td tr ts tf ton toff 006aaa266 Fig 13. BISS transistor switching time definition VBB VCC RB RC (probe) Vo (probe) oscilloscope oscilloscope 450 W 450 W R2 VI DUT R1 mgd624 I =- 0.5A; I =- 25mA; I =25mA; R1=open; R2=100W ; R =300W ; R =20W C Bon Boff B C Fig 14. Test circuit for switching times PBSS5160DS_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 9 October 2008 9 of 14

PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low V (BISS) transistor CEsat 9. Package outline 3.1 1.1 2.7 0.9 6 5 4 0.6 0.2 3.0 1.7 2.5 1.3 pin 1 index 1 2 3 0.40 0.26 0.95 0.25 0.10 1.9 Dimensions in mm 04-11-08 Fig 15. Package outline SOT457(SC-74) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 PBSS5160DS SOT457 4mm pitch, 8mm tape and reel; T1 [2] -115 -135 4mm pitch, 8mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, seeSection14. [2] T1: normal taping [3] T2: reverse taping PBSS5160DS_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 9 October 2008 10 of 14

PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low V (BISS) transistor CEsat 11. Soldering 3.45 1.95 0.45 0.55 solder lands 0.95 (6· ) (6· ) 3.3 2.825 solder resist 0.95 solder paste occupied area 0.7 Dimensions in mm (6· ) 0.8 (6· ) 2.4 sot457_fr Fig 16. Reflow soldering footprint SOT457(SC-74) 5.3 1.5 (4· ) solder lands 1.475 solder resist 0.45 5.05 (2· ) occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6· ) 2.85 sot457_fw Fig 17. Wave soldering footprint SOT457(SC-74) PBSS5160DS_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 9 October 2008 11 of 14

PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low V (BISS) transistor CEsat 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS5160DS_3 20081009 Product data sheet - PBSS5160DS_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Figure9: amended • Section 13 “Legal information”: updated PBSS5160DS_2 20050628 Product data sheet - PBSS5160DS_1 PBSS5160DS_1 20040716 Objective data sheet - - PBSS5160DS_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 9 October 2008 12 of 14

PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low V (BISS) transistor CEsat 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. 13.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications —Applications that are described herein for any of these modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the informationincludedhereinandshallhavenoliabilityfortheconsequencesof specified use without further testing or modification. use of such information. Limiting values —Stress above one or more limiting values (as defined in Short data sheet —A short data sheet is an extract from a full data sheet theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand the device at these or any other conditions above those given in the full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability. office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale —NXP Semiconductors products are sold full data sheet shall prevail. subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, 13.3 Disclaimers intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such General —Information in this document is believed to be accurate and terms and conditions, the latter will prevail. reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor No offer to sell or license —Nothing in this document may be interpreted warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch or construed as an offer to sell products that is open for acceptance or the information and shall have no liability for the consequences of use of such grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents information. or other industrial or intellectual property rights. Right to make changes —NXPSemiconductorsreservestherighttomake Quick reference data —The Quick reference data is an extract of the changes to information published in this document, including without product data given in the Limiting values and Characteristics sections of this limitation specifications and product descriptions, at any time and without document, and as such is not complete, exhaustive or legally binding. notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, 13.4 Trademarks authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or Notice:Allreferencedbrands,productnames,servicenamesandtrademarks malfunction of an NXP Semiconductors product can reasonably be expected are the property of their respective owners. to result in personal injury, death or severe property or environmental 14. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com PBSS5160DS_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 9 October 2008 13 of 14

PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low V (BISS) transistor CEsat 15. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information. . . . . . . . . . . . . . . . . . . . . 10 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14 Contact information. . . . . . . . . . . . . . . . . . . . . 13 15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 October 2008 Document identifier: PBSS5160DS_3