PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 20 March 2018 Product data sheet 1. General description PNP low V transistor in a medium power SOT89 (SC-62) package. CEsat NPN complement: PBSS4540X. 2. Features and benefits • Low collector-emitter saturation voltage V CEsat • High collector current capability: I and I C CM • High efficiency leading to less heat generation. • AEC-Q101 qualified 3. Applications • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Medium power driver (e.g. relays, buzzers and motors). 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -40 V CEO voltage I collector current - - -4 A C I peak collector current single pulse; t ≤ 1 ms - - -10 A CM p h DC current gain V = -2 V; I = -0.5 A; T = 25 °C 250 - - FE CE C amb R collector-emitter I = -5 A; I = -500 mA; t ≤ 300 µs; - 45 75 mΩ CEsat C B p saturation resistance pulsed; δ ≤ 0.02 ; T = 25 °C amb

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter C 2 C collector B 3 B base 3 2 1 E sym132 SOT89 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5540X SOT89 plastic surface-mounted package; die pad for good heat transfer; SOT89 3 leads 7. Marking Table 4. Marking codes Type number Marking code[1] PBSS5540X %1G [1] % = placeholder for manufacturing site code PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 2 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -40 V CBO V collector-emitter voltage open base - -40 V CEO V emitter-base voltage open collector - -6 V EBO I collector current - -4 A C I repetitive peak collector δ ≤ 0.2 ; t ≤ 10 ms - -5 A CRM p current I peak collector current single pulse; t ≤ 1 ms - -10 A CM p I base current - -1 A B I peak base current single pulse; t ≤ 1 ms - -2 A BM p P total power dissipation [1] [2] - 2.5 W tot T ≤ 25 °C [2] - 0.55 W amb [3] - 1 W [4] - 1.4 W [5] - 1.6 W T junction temperature - 150 °C j T ambient temperature -65 150 °C amb T storage temperature -65 150 °C stg [1] Pulsed tp ≤ 10 ms; δ ≤ 0.2 [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [5] Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 3 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 001aaa229 1600 Ptot (1) (mW) 1200 (2) 800 (3) 400 0 -50 0 50 100 150 200 Tamb (°C) 2 (1) FR4 PCB; 6 cm mounting pad for collector 2 (2) FR4 PCB; 1 cm mounting pad for collector (3) FR4; standard footprint Fig. 1. Power derating curves PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 4 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance in free air [1] [2] - - 50 K/W th(j-a) from junction to [1] - - 225 K/W ambient [3] - - 125 K/W [4] - - 90 K/W [5] - - 80 K/W R thermal resistance - - 16 K/W th(j-sp) from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Pulse test: tp ≤ 10 ms; δ ≤ 0.2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [5] Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. 103 006aaa232 Zth (K/W) (1) (2) 102 (3) (4) (5) (6) 10 (7) (8) (9) (10) 1 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) Mounted on FR4 PCB; standard footprint (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig. 2. Transient thermal impedance as a function of pulse duration; typical values PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 5 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 103 006aaa233 Zth (K/W) (1) 102 (2) (3) (4) (5) (6) 10 (7) (8) (9) 1 (10) 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) 2 Mounted on FR4 PCB; mounting pad for collector 1 cm (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig. 3. Transient thermal impedance as a function of pulse duration; typical values PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 6 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 103 006aaa234 Zth (K/W) 102 (1) (2) (3) (4) (5) 10 (6) (7) (8) (9) 1 (10) 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) 2 Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig. 4. Transient thermal impedance as a function of pulse duration; typical values PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 7 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit I collector-base cut-off V = -30 V; I = 0 A; T = 25 °C - - -100 nA CBO CB E amb current V = -30 V; I = 0 A; T = 150 °C - - -50 µA CB E j I emitter-base cut-off V = -5 V; I = 0 A; T = 25 °C - - -100 nA EBO EB C amb current h DC current gain V = -2 V; I = -0.5 A; T = 25 °C 250 - - FE CE C amb V = -2 V; I = -1 A; t ≤ 300 µs; 200 - - CE C p pulsed; δ ≤ 0.02 ; T = 25 °C amb V = -2 V; I = -2 A; t ≤ 300 µs; 150 - - CE C p pulsed; δ ≤ 0.02 ; T = 25 °C amb V = -2 V; I = -5 A; t ≤ 300 µs; 50 - - CE C p pulsed; δ ≤ 0.02 ; T = 25 °C amb V collector-emitter I = -0.5 A; I = -5 mA; T = 25 °C - - -120 mV CEsat C B amb saturation voltage I = -1 A; I = -10 mA; T = 25 °C - - -170 mV C B amb I = -2 A; I = -200 mA; T = 25 °C - - -160 mV C B amb I = -4 A; I = -200 mA; t ≤ 300 µs; - - -340 mV C B p pulsed; δ ≤ 0.02 ; T = 25 °C amb I = -5 A; I = -500 mA; t ≤ 300 µs; - - -375 mV C B p pulsed; δ ≤ 0.02 ; T = 25 °C R collector-emitter amb - 45 75 mΩ CEsat saturation resistance V base-emitter saturation I = -4 A; I = -200 mA; t ≤ 300 µs; - - -1.1 V BEsat C B p voltage pulsed; δ ≤ 0.02 ; T = 25 °C amb I = -5 A; I = -500 mA; t ≤ 300 µs; - - -1.2 V C B p pulsed; δ ≤ 0.02 ; T = 25 °C amb V base-emitter turn-on V = -2 V; I = -2 A; T = 25 °C - - -1 V BEon CE C amb voltage f transition frequency V = -10 V; I = -0.1 A; f = 100 MHz; 60 - - MHz T CE C T = 25 °C amb C collector capacitance V = -10 V; I = 0 A; i = 0 A; - - 105 pF c CB E e f = 1 MHz; T = 25 °C amb PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 8 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 001aaa157 001aaa158 -8 -1.2 IC (1) (A) VBE (2) (V) -6 (3) (1) -0.8 (2) (4) -4 (3) (5) -0.4 -2 0 0 0 -0.5 -1 -1.5 -2 -10-1 -1 -10 -102 -103 -104 VCE (V) IC (mA) (1) I = −55 mA V = −2 V B CE (2) I = −44 mA (1) T = −55 °C B amb (3) I = −33 mA (2) T = 25 °C B amb (4) I = −22 mA (3) T = 100 °C B amb (5) I = −11 mA B Fig. 6. Base-emitter voltage as a function of collector Fig. 5. Collector current as a function of collector- current; typical values emitter voltage; typical values 1000 001aaa159 102 001aaa160 hFE RCEsat (Ω) 800 10 600 (1) 1 (2) 400 (2) (1) 10-1 200 (3) (3) 0 10-2 -10-1 -1 -10 -102 -103 -104 -10-1 -1 -10 -102 -103 -104 IC (mA) IC (mA) V = −2 V I /I = 20 CE C B (1) T = 100 °C (1) T = 100 °C amb amb (2) T = 25 °C (2) T = 25 °C amb amb (3) T = −55 °C (3) T = −55 °C amb amb Fig. 7. DC current gain as a function of collector Fig. 8. Equivalent on-resistance as a function of current; typical values collector current; typical values PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 9 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 001aaa161 001aaa162 -1 -1 VCEsat VCEsat (V) (V) -10-1 -10-1 (1) (1) (2) -10-2 (2) (3) -10-2 (3) -10-3 -10-3 -10-1 -1 -10 -102 -103 -104 -10-1 -1 -10 -102 -103 -104 IC (mA) IC (mA) I /I = 20 T = 25 °C C B amb (1) T = 100 °C (1) I /I = 100 amb C B (2) T = 25 °C (2) I /I = 50 amb C B (3) T = −55 °C (3) I /I = 10 amb C B Fig. 9. Collector-emitter saturation voltage as a Fig. 10. Collector-emitter saturation voltage as a function of collector current; typical values function of collector current; typical values 001aaa163 001aaa164 -10 -1.2 VBE (V) VBEsat (V) -0.8 -1 (1) (2) -0.4 (3) -10-1 0 10-1 -1 -10 -102 -103 -104 -10-1 -1 -10 -102 -103 -104 IC (mA) IC (mA) I /I = 20 T = 25 °C C B amb (1) T = −55 °C amb Fig. 12. Base-emitter voltage as a function of collector (2) T = 25 °C amb current; typical values (3) T = 100 °C amb Fig. 11. Base-emitter saturation voltage as a function of collector current; typical values PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 10 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 11. Package outline Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads SOT89 D B A bp3 E HE Lp 1 2 3 bp2 c w M B bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w 1.6 0.48 0.53 1.8 0.44 4.6 2.6 4.25 1.2 mm 3.0 1.5 0.13 1.4 0.35 0.40 1.4 0.23 4.4 2.4 3.75 0.8 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 06-03-16 SOT89 TO-243 SC-62 06-08-29 Fig. 13. Package outline SOT89 PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 11 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 12. Soldering 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 solder resist 1.2 4.6 4.85 0.5 solder paste occupied area 1 1.1 (3×) (2×) Dimensions in mm 1.5 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig. 14. Reflow soldering footprint for SOT89 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.9 1.5 0.7 (2×) 5.3 sot089_fw Fig. 15. Wave soldering footprint for SOT89 PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 12 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 13. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBSS5540X v.3 20180320 Product data sheet - PBSS5540X v.2 Modifications: • The format of this data sheet has been redesigned to comply with the identity guidelines of Nexperia. • Legal texts have been adapted to the new company name where appropriate. • Figure 5: Legend adapted PBSS5540X v.2 20041104 Product data sheet - PBSS5540X v.1 PBSS5540X v.1 20040115 Product data sheet - - PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 13 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. 14. Legal information Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This Data sheet status document supersedes and replaces all information supplied prior to the publication hereof. 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Nexperia profits, lost savings, business interruption, costs related to the removal accepts no liability for inclusion and/or use of non-automotive qualified or replacement of any products or rework charges) whether or not such products in automotive equipment or applications. damages are based on tort (including negligence), warranty, breach of In the event that customer uses the product for design-in and use in contract or any other legal theory. automotive applications to automotive specifications and standards, Notwithstanding any damages that customer might incur for any reason customer (a) shall use the product without Nexperia’ warranty of the product whatsoever, Nexperia’ aggregate and cumulative liability towards customer for such automotive applications, use and specifications, and (b) whenever PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 14 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor customer uses the product for automotive applications beyond Nexperia’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’ standard warranty and Nexperia’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 15 / 16

Nexperia PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor 15. Contents 1. General description......................................................1 2. Features and benefits..................................................1 3. Applications..................................................................1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking..........................................................................2 8. Limiting values.............................................................3 9. Thermal characteristics...............................................5 10. Characteristics............................................................8 11. Package outline........................................................11 12. Soldering...................................................................12 13. Revision history........................................................13 14. Legal information.....................................................14 © Nexperia B.V. 2018. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 20 March 2018 PBSS5540X All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 20 March 2018 16 / 16