Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 PBSS4140U 40 V low V NPN transistor CEsat Product data sheet 2001 Jul 13 Supersedes data of 2001 Mar 27

NXP Semiconductors Product data sheet 40 V low V NPN transistor PBSS4140U CEsat FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT • High current capabilities. V collector-emitter voltage 40 V CEO • Improved device reliability due to reduced heat I peak collector current 2 A CM generation. R equivalent on-resistance <500 mΩ CEsat • Enhanced performance over SOT231A general purpose packaged transistors. PINNING APPLICATIONS PIN DESCRIPTION 1 base • General purpose switching and muting 2 emitter • LCD backlighting 3 collector • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). 3 handbook, halfpage 3 DESCRIPTION NPN low VCEsat transistor in a SOT323 plastic package. 1 PNP complement: PBSS5140U. 2 MARKING 1 2 Top view MAM062 TYPE NUMBER MARKING CODE PBSS4140U 41t Fig.1 Simplified outline SOT323 and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter − 40 V CBO V collector-emitter voltage open base − 40 V CEO V emitter-base voltage open collector − 5 V EBO I collector current (DC) − 1 A C I peak collector current − 2 A CM I peak base current − 1 A BM P total power dissipation T ≤ 25 °C; note 1 − 250 mW tot amb T ≤ 25 °C; note 2 − 350 mW amb T storage temperature −65 +150 °C stg T junction temperature − 150 °C j T operating ambient temperature −65 +150 °C amb Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm. 2001 Jul 13 2

NXP Semiconductors Product data sheet 40 V low V NPN transistor PBSS4140U CEsat THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to in free air; note 1 500 K/W th j-a ambient in free air; note 2 357 K/W Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. CHARACTERISTICS T = 25 °C unless otherwise specified. amb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I collector-base cut-off V = 40 V; I = 0 − − 100 nA CBO CB C current V = 40 V; I = 0; T = 150 °C − − 50 μA CB C amb I collector-emitter cut-off V = 30 V; I = 0 − − 100 nA CEO CE B current I emitter-base cut-off current V = 5 V; I = 0 − − 100 nA EBO EB C h DC current gain V = 5 V; I = 1 mA 300 − − FE CE C V = 5 V; I = 500 mA 300 − 900 CE C V = 5 V; I = 1 A 200 − − CE C V collector-emitter saturation I = 100 mA; I = 1 mA − − 200 mV CEsat C B voltage I = 500 mA; I = 50 mA − − 250 mV C B I = 1 A; I = 100 mA − − 500 mV C B R equivalent on-resistance I = 500 mA; I = 50 mA; note 1 − 260 <500 mΩ CEsat C B V base-emitter saturation I = 1 A; I = 100 mA − − 1.2 V BEsat C B voltage V base-emitter turn-on voltage V = 5 V; I = 1 A − − 1.1 V BEon CE C f transition frequency I = 50 mA; V = 10 V; f = 100 MHz 150 − − MHz T C CE C collector capacitance V = 10 V; I = I = 0; f = 1 MHz − − 10 pF c CB E e Note 1. Pulse test: t ≤ 300 μs; δ ≤ 0.02. p 2001 Jul 13 3

NXP Semiconductors Product data sheet 40 V low V NPN transistor PBSS4140U CEsat MLD660 MLD656 1000 10 handbook, halfpage handbook, halfpage hFE 800 (1) VBE (V) 600 (2) 1 (1) 400 (2) (3) (3) 200 0 10−1 10−1 1 10 102 103 104 10−1 1 10 102 103 104 IC (mA) IC (mA) VCE = 5 V. VCE = 5 V. (1) Tamb = 150 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.2 DC current gain as a function of collector Fig.3 Base-emitter voltage as a function of current; typical values. collector current; typical values. 103 MLD657 102 MLD658 handbook, halfpage handbook, halfpage VCEsat RCEsat (mV) (Ω) (1) 102 10 (3) (2) (1) (2) 10 1 (3) 1 10−1 1 10 102 103 104 10−1 1 10 10−2 10−3 10−4 IC (mA) IC (mA) IC/IB = 10. IC/IB = 10. (1) Tamb = 150 °C. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = −55 °C. Fig.4 Collector-emitter saturation voltage as a Fig.5 Equivalent on-resistance as a function of function of collector current; typical values. collector current; typical values. 2001 Jul 13 4

NXP Semiconductors Product data sheet 40 V low V NPN transistor PBSS4140U CEsat MLD659 400 handbook, halfpage fT (MHz) 300 200 100 0 0 200 400 600 800 1000 IC (mA) VCE = 10 V. Fig.6 Transition frequency as a function of collector current; typical values. 2001 Jul 13 5

NXP Semiconductors Product data sheet 40 V low V NPN transistor PBSS4140U CEsat PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D B E A X y HE v M A 3 Q A A1 c 1 2 e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x bp c D E e e1 HE Lp Q v w 1.1 0.4 0.25 2.2 1.35 2.2 0.45 0.23 mm 0.1 1.3 0.65 0.2 0.2 0.8 0.3 0.10 1.8 1.15 2.0 0.15 0.13 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION SOT323 SC-70 97-02-28 2001 Jul 13 6

NXP Semiconductors Product data sheet 40 V low V NPN transistor PBSS4140U CEsat DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2001 Jul 13 7

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Jul 13 Document order number: 9397 750 08427