Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4130T 30 V, 1 A NPN low V (BISS) transistor CEsat Product specification 2003 Nov 27

Philips Semiconductors Product specification 30 V, 1 A PBSS4130T NPN low V (BISS) transistor CEsat FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT • High collector current capability I and I C CM V collector-emitter voltage 30 V CEO • High efficiency leading to less heat generation I collector current (DC) 1 A C • Reduced printed-circuit board requirements I peak collector current 3 A CM • Cost effective alternative to MOSFETs in specific R equivalent on-resistance 220 mW CEsat applications. PINNING APPLICATIONS PIN DESCRIPTION • Power management 1 base – DC/DC conversion 2 emitter – Supply line switching 3 collector – Battery charger – LCD backlighting. • Peripheral driver – Driver in low supply voltage applications (e.g. lamps and LEDs) handbook, halfpage 3 – Inductive load drivers (e.g. relays, buzzers and 3 motors). 1 DESCRIPTION 2 NPNBISStransistorinaSOT23plasticpackageproviding 1 2 ultra low V and R parameters. CEsat CEsat PNP complement: PBSS5130T. Top view MAM255 MARKING TYPE NUMBER MARKING CODE(1) Fig.1 Simplified outline (SOT23) and symbol. PBSS4130T *3C Note 1. *=p: made in Hong Kong. *=t: made in Malaysia. *=W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PBSS4130T - plastic surface mounted package; 3 leads SOT23 2003Nov27 2

Philips Semiconductors Product specification 30 V, 1 A PBSS4130T NPN low V (BISS) transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter - 40 V CBO V collector-emitter voltage open base - 30 V CEO V emitter-base voltage open collector - 5 V EBO I collector current (DC) - 1 A C I peak collector current - 3 A CM I peak base current - 300 mA BM P total power dissipation T £ 25(cid:176) C; note1 - 300 mW tot amb T £ 25(cid:176) C; note2 - 480 mW amb T storage temperature - 65 +150 (cid:176) C stg T junction temperature - 150 (cid:176) C j T operating ambient temperature - 65 +150 (cid:176) C amb Notes 1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1cm2. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient in free air; note1 417 K/W thj-a in free air; note2 260 K/W Notes 1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1cm2. 2003Nov27 3

Philips Semiconductors Product specification 30 V, 1 A PBSS4130T NPN low V (BISS) transistor CEsat CHARACTERISTICS T =25(cid:176) C unless otherwise specified. amb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I collector-base cut-off current V =30V; I =0 - - 100 nA CBO CB E V =30V; I =0; T =150(cid:176) C - - 50 m A CB E j I emitter-base cut-off current V =4V; I =0 - - 100 nA EBO EB C h DCcurrent gain V =2V; I =100mA 350 470 - FE CE C V =2V; I =500mA 300 450 - CE C V =2V; I =1A 300 420 - CE C V collector-emitter saturation voltage I =100mA; I =1mA - - 90 mV CEsat C B I =500mA; I =50mA - - 120 mV C B I =750mA; I =15mA - - 220 mV C B I =1A; I =50mA; note1 - - 270 mV C B R equivalent on-resistance I =500mA; I =50mA; note1 - - 240 mW CEsat C B V base-emitter saturation voltage I =1A; I =100mA; note1 - - 1.1 V BEsat C B V base-emitter turn-on voltage V =2V; I =100mA - - 0.75 V BEon CE C f transition frequency I =100mA; V =10V; 100 - - MHz T C CE f=100MHz C collector capacitance V =10V; I =I =0; f=1MHz - - 20 pF c CB E e Note 1. Pulse test: t £ 300m s;d£ 0.02. p 2003Nov27 4

Philips Semiconductors Product specification 30 V, 1 A PBSS4130T NPN low V (BISS) transistor CEsat PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D B E A X HE v M A 3 Q A A1 1 2 c e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x. bp c D E e e1 HE Lp Q v w 1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55 mm 0.1 1.9 0.95 0.2 0.1 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION 97-02-28 SOT23 TO-236AB 99-09-13 2003Nov27 5

Philips Semiconductors Product specification 30 V, 1 A PBSS4130T NPN low V (BISS) transistor CEsat DATA SHEET STATUS DATA SHEET PRODUCT LEVEL DEFINITION STATUS(1) STATUS(2)(3) I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminarydata Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. Fordatasheetsdescribingmultipletypenumbers,thehighest-levelproductstatusdeterminesthedatasheetstatus. DEFINITIONS DISCLAIMERS Short-form specification(cid:190) The data in a short-form Life support applications(cid:190) These products are not specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or same type number and title. For detailed information see systems where malfunction of these products can the relevant data sheet or data handbook. reasonablybeexpectedtoresultinpersonalinjury.Philips Semiconductorscustomersusingorsellingtheseproducts Limitingvaluesdefinition(cid:190) Limitingvaluesgivenarein for use in such applications do so at their own risk and accordance with the Absolute Maximum Rating System agree to fully indemnify Philips Semiconductors for any (IEC60134). Stress above one or more of the limiting damages resulting from such application. values may cause permanent damage to the device. These are stress ratings only and operation of the device Right to make changes(cid:190) Philips Semiconductors attheseoratanyotherconditionsabovethosegiveninthe reserves the right to make changes in the products - Characteristicssectionsofthespecificationisnotimplied. including circuits, standard cells, and/or software - Exposure to limiting values for extended periods may described or contained herein in order to improve design affect device reliability. and/orperformance.Whentheproductisinfullproduction (status ‘Production’), relevant changes will be Application information(cid:190) Applications that are communicated via a Customer Product/Process Change described herein for any of these products are for Notification(CPCN).PhilipsSemiconductorsassumesno illustrative purposes only. Philips Semiconductors make responsibility or liability for the use of any of these norepresentationorwarrantythatsuchapplicationswillbe products, conveys no licence or title under any patent, suitable for the specified use without further testing or copyright, or mask work right to these products, and modification. makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003Nov27 6

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax:+31402724825 For sales offices addresses send e-mail to:sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Theinformationpresentedinthisdocumentdoesnotformpartofanyquotationorcontract,isbelievedtobeaccurateandreliableandmaybechanged without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/01/pp7 Date of release:2003Nov27 Document order number: 939775011897