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PBSS4041PT 60 V, 2.7 A PNP low V (BISS) transistor CEsat Rev. 02 — 9 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal(BISS) transistor in a SOT23(TO-236AB) CEsat small Surface-Mounted Device(SMD) plastic package. NPN complement: PBSS4041NT. 1.2 Features and benefits (cid:132) Very low collector-emitter saturation voltage V CEsat (cid:132) High collector current capability I and I C CM (cid:132) High collector current gain (h ) at high I FE C (cid:132) High energy efficiency due to less heat generation (cid:132) AEC-Q101 qualified (cid:132) Smaller required Printed-Circuit Board(PCB) area than for conventional transistors 1.3 Applications (cid:132) Loadswitch (cid:132) Battery-driven devices (cid:132) Power management (cid:132) Charging circuits (cid:132) Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - −60 V CEO I collector current - - −2.7 A C I peak collector current single pulse; - - −8 A CM t ≤1ms p R collector-emitter I =−3A; [1] - 80 120 mΩ CEsat C saturation resistance I =−300mA B [1] Pulse test: tp≤300μs; δ≤0.02.

PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 3 3 2 emitter 3 collector 1 1 2 2 sym013 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4041PT - plastic surface-mounted package; 3leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PBSS4041PT *BL [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - −60 V CBO V collector-emitter voltage open base - −60 V CEO V emitter-base voltage open collector - −5 V EBO I collector current - −2.7 A C I peak collector current single pulse; - −8 A CM t ≤1ms p I base current - −1 A B PBSS4041PT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 9 March 2010 2 of 15

PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low V (BISS) transistor CEsat Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit P total power dissipation T ≤25°C [1] - 390 mW tot amb [2] - 660 mW [3] - 1100 mW T junction temperature - 150 °C j T ambient temperature −55 +150 °C amb T storage temperature −65 +150 °C stg [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on a ceramicPCB, Al O , standard footprint. 2 3 006aab954 1.5 Ptot (W) (1) 1.0 (2) 0.5 (3) 0 −75 −25 25 75 125 175 Tamb (°C) (1) CeramicPCB, Al O , standard footprint 2 3 (2) FR4PCB, mounting pad for collector 1cm2 (3) FR4PCB, standard footprint Fig 1. Power derating curves PBSS4041PT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 9 March 2010 3 of 15

PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low V (BISS) transistor CEsat 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air [1] - - 320 K/W th(j-a) junction to ambient [2] - - 190 K/W [3] - - 115 K/W R thermal resistance from - - 62 K/W th(j-sp) junction to solder point [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on a ceramicPCB, Al O , standard footprint. 2 3 103 006aab955 Zth(j-a) duty cycle = 1 (K/W) 0.75 0.5 102 0.33 0.2 0.1 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4041PT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 9 March 2010 4 of 15

PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low V (BISS) transistor CEsat 103 006aab956 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4PCB, mounting pad for collector 1cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 006aab957 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) CeramicPCB, Al O , standard footprint 2 3 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4041PT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 9 March 2010 5 of 15

PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low V (BISS) transistor CEsat 7. Characteristics Table 7. Characteristics T =25°C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit I collector-base cut-off V =−60V; I =0A - - −100 nA CBO CB E current V =−60V; I =0A; - - −55 μA CB E T =150°C j I collector-emitter V =−48V; V =0V - - −100 nA CES CE BE cut-off current I emitter-base cut-off V =−5V; I =0A - - −100 nA EBO EB C current h DCcurrent gain V =−2V; I =−500mA 200 300 - FE CE C V =−2V; I =−1A [1] 150 270 - CE C V =−2V; I =−2A [1] 120 180 - CE C V =−2V; I =−4A [1] 35 55 - CE C V collector-emitter I =−500mA; - −49 −75 mV CEsat C saturation voltage I =−50mA B I =−1A; I =−50mA [1] - −100 −150 mV C B I =−1A; I =−10mA [1] - −260 −390 mV C B I =−2A; I =−40mA [1] - −420 −600 mV C B I =−3A; I =−300mA [1] - −240 −360 mV C B R collector-emitter I =−3A; I =−300mA [1] - 80 120 mΩ CEsat C B saturation resistance V base-emitter I =−1A; I =−100mA [1] - −0.9 −1.0 V BEsat C B saturation voltage I =−3A; I =−300mA [1] - −1.04 −1.15 V C B V base-emitter turn-on V =−2V; I =−2A - −0.84 −0.9 V BEon CE C voltage t delay time V =−12.5V; I =−1A; - 18 - ns d CC C I =−0.05A; t rise time Bon - 70 - ns r I =0.05A Boff t turn-on time - 88 - ns on t storage time - 350 - ns s t fall time - 80 - ns f t turn-off time - 430 - ns off f transition frequency V =−10V; - 150 - MHz T CE I =−100mA; C f=100MHz C collector capacitance V =−10V; I =i =0A; - 38 - pF c CB E e f=1MHz [1] Pulse test: tp≤300μs; δ≤0.02. PBSS4041PT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 9 March 2010 6 of 15

PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low V (BISS) transistor CEsat 500 006aac028 −5 006aac029 hFE IC (A) 400 (1) −4 IB (mA) = −50 −45 −40 −35 300 −3 −30 −25 (2) −20 −15 200 −2 −10 (3) −5 100 −1 0 0 −10−1 −1 −10 −102 −103 −104 0 −1 −2 −3 −4 −5 IC (mA) VCE (V) VCE=−2V Tamb=25°C (1) Tamb=100°C (2) Tamb=25°C (3) Tamb=−55°C Fig 5. DCcurrent gain as a function of collector Fig 6. Collector current as a function of current; typical values collector-emitter voltage; typical values −1.6 006aac030 −1.6 006aac031 VBE (V) VBEsat (V) −1.2 −1.2 −0.8 (1) (1) (2) −0.6 (3) (2) −0.4 (3) 0.0 −0.2 −10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104 IC (mA) IC (mA) VCE=−2V IC/IB=20 (1) Tamb=−55°C (1) Tamb=−55°C (2) Tamb=25°C (2) Tamb=25°C (3) Tamb=100°C (3) Tamb=100°C Fig 7. Base-emitter voltage as a function of collector Fig 8. Base-emitter saturation voltage as a function current; typical values of collector current; typical values PBSS4041PT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 9 March 2010 7 of 15

PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low V (BISS) transistor CEsat −1 006aac032 −1 006aac033 VCEsat (V) VCEsat (V) −10−1 (1) −10−1 (2) −10−2 (1) (2) (3) (3) −10−2 −10−3 −10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104 IC (mA) IC (mA) IC/IB=20 Tamb=25°C (1) Tamb=100°C (1) IC/IB=100 (2) Tamb=25°C (2) IC/IB=50 (3) Tamb=−55°C (3) IC/IB=10 Fig 9. Collector-emitter saturation voltage as a Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values function of collector current; typical values 103 006aac034 103 006aac035 RCEsat RCEsat (Ω) (Ω) 102 102 10 10 1 1 (1) (1) (2) 10−1 (2) 10−1 (3) (3) 10−2 10−2 −10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104 IC (mA) IC (mA) IC/IB=20 Tamb=25°C (1) Tamb=100°C (1) IC/IB=100 (2) Tamb=25°C (2) IC/IB=50 (3) Tamb=−55°C (3) IC/IB=10 Fig 11. Collector-emitter saturation resistance as a Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values function of collector current; typical values PBSS4041PT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 9 March 2010 8 of 15

PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low V (BISS) transistor CEsat 8. Test information −IB 90 % input pulse (idealized waveform) −IBon (100 %) 10 % −IBoff output pulse −IC (idealized waveform) 90 % −IC (100 %) 10 % t td tr ts tf ton toff 006aaa266 Fig 13. BISS transistor switching time definition VBB VCC RB RC (probe) Vo (probe) oscilloscope oscilloscope 450 Ω 450 Ω R2 VI DUT R1 mgd624 Fig 14. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBSS4041PT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 9 March 2010 9 of 15

PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low V (BISS) transistor CEsat 9. Package outline 3.0 1.1 2.8 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 0.48 0.15 0.38 0.09 1.9 Dimensions in mm 04-11-04 Fig 15. Package outline SOT23(TO-236AB) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 PBSS4041PT SOT23 4mm pitch, 8mm tape and reel -215 -235 [1] For further information and the availability of packing methods, see Section14. PBSS4041PT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 9 March 2010 10 of 15

PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low V (BISS) transistor CEsat 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 1.7 2 solder paste 0.7 0.6 occupied area (3×) (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 16. Reflow soldering footprint SOT23(TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 17. Wave soldering footprint SOT23(TO-236AB) PBSS4041PT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 9 March 2010 11 of 15

PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low V (BISS) transistor CEsat 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS4041PT_2 20100309 Product data sheet - PBSS4041PT_1 Modifications: • Typo for V maximum value amended BEsat PBSS4041PT_1 20100131 Product data sheet - - PBSS4041PT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 9 March 2010 12 of 15

PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low V (BISS) transistor CEsat 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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This document supersedes and replaces all information supplied prior authorization from national authorities. to the publication hereof. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. PBSS4041PT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 9 March 2010 13 of 15

PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low V (BISS) transistor CEsat 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PBSS4041PT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 9 March 2010 14 of 15

PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low V (BISS) transistor CEsat 15. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 March 2010 Document identifier: PBSS4041PT_2