PBSS4041NZ 60 V, 7 A NPN low VCEsat (BISS) transistor Rev. 2 — 8 August 2012 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) CEsat medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ. 1.2 Features and benefits  Very low collector-emitter saturation  High energy efficiency due to less heat voltage V generation CEsat  High collector current capability I and  AEC-Q101 qualified C I CM  Smaller required PCB area than for  High collector current gain (h ) at conventional transistors FE high I C 1.3 Applications  Loadswitch  Charging circuits  Battery-driven devices  Power switches (e.g. motors, fans)  Power management 1.4 Quick reference data Table 1. Quick refere nce data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 60 V CEO voltage I collector current - - 7 A C I peak collector current single pulse; t ≤1ms - - 15 A CM p R collector-emitter I =6A; I =600mA; pulsed; - 17.5 25 mΩ CEsat C B saturation resistance t ≤300µs; δ≤0.02; T =25°C p amb

PBSS4041NZ Nexperia 60 V, 7 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 B base 4 C 2 C collector 3 E emitter B 4 C collector 1 2 3 E SOT223 (SC-73) sym123 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version PBSS4041NZ SC-73 plastic surface-mounted package with increased heatsink; SOT223 4leads 4. Marking Table 4. Marking cod es Type number Marking code PBSS4041NZ PB4041NZ 5. Limiting values Table 5. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 60 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 7 A C I peak collector current single pulse; t ≤1ms - 15 A CM p I base current - 1 A B P total power dissipation T ≤25°C [1] - 770 mW tot amb [2] - 1700 mW [3] - 2600 mW PBSS4041NZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 8 August 2012 2 of 15

PBSS4041NZ Nexperia 60 V, 7 A NPN low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit T junction temperature - 150 °C j T ambient temperature -55 150 °C amb T storage temperature -65 150 °C stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al O , standard footprint. 2 3 006aac060 3.0 (1) Ptot (W) 2.0 (2) 1.0 (3) 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al O , standard footprint 2 3 (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance in free air [1] - - 160 K/W th(j-a) from junction to [2] - - 75 K/W ambient [3] - - 50 K/W R thermal resistance - - 11 K/W th(j-sp) from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al O , standard footprint. 2 3 PBSS4041NZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 8 August 2012 3 of 15

PBSS4041NZ Nexperia 60 V, 7 A NPN low VCEsat (BISS) transistor 103 006aac061 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 006aac062 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4041NZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 8 August 2012 4 of 15

PBSS4041NZ Nexperia 60 V, 7 A NPN low VCEsat (BISS) transistor 102 006aac063 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.50 0.33 10 0.20 0.10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al O , standard footprint 2 3 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characterist ics Symbol Parameter Conditions Min Typ Max Unit I collector-base cut-off V =60V; I =0A; T =25°C - - 100 nA CBO CB E amb current V =60V; I =0A; T =150°C - - 50 µA CB E j I collector-emitter cut-off V =48V; V =0V; T =25°C - - 100 nA CES CE BE amb current I emitter-base cut-off V =5V; I =0A; T =25°C - - 100 nA EBO EB C amb current h DC current gain V =2V; I =500mA; pulsed; 300 500 - FE CE C t ≤300µs; δ≤0.02; T =25°C p amb V =2V; I =1A; pulsed; t ≤300µs; 300 500 - CE C p δ≤0.02; T =25°C amb V =2V; I =2A; pulsed; t ≤300µs; 300 500 - CE C p δ≤0.02; T =25°C amb V =2V; I =4A; pulsed; t ≤300µs; 250 400 - CE C p δ≤0.02; T =25°C amb V =2V; I =6A; pulsed; t ≤300µs; 100 200 - CE C p δ≤0.02; T =25°C amb V =2V; I =7A; pulsed; t ≤300µs; 50 100 - CE C p δ≤0.02; T =25°C amb PBSS4041NZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 8 August 2012 5 of 15

PBSS4041NZ Nexperia 60 V, 7 A NPN low VCEsat (BISS) transistor Table 7. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit V collector-emitter I =1A; I =50mA; pulsed; - 25 35 mV CEsat C B saturation voltage t ≤300µs; δ≤0.02; T =25°C p amb I =1A; I =10mA; pulsed; - 43 60 mV C B t ≤300µs; δ≤0.02; T =25°C p amb I =2A; I =40mA; pulsed; - 53 75 mV C B t ≤300µs; δ≤0.02; T =25°C p amb I =4A; I =200mA; pulsed; - 78 110 mV C B t ≤300µs; δ≤0.02; T =25°C p amb I =4A; I =40mA; pulsed; - 115 160 mV C B t ≤300µs; δ≤0.02; T =25°C p amb I =7A; I =350mA; pulsed; - 130 195 mV C B t ≤300µs; δ≤0.02; T =25°C p amb R collector-emitter I =6A; I =600mA; pulsed; - 17.5 25 mΩ CEsat C B saturation resistance t ≤300µs; δ≤0.02; T =25°C p amb V base-emitter saturation I =1A; I =100mA; pulsed; - 0.83 0.9 V BEsat C B voltage t ≤300µs; δ≤0.02; T =25°C p amb I =4A; I =400mA; pulsed; - 0.98 1.05 V C B t ≤300µs; δ≤0.02; T =25°C p amb V base-emitter turn-on V =2V; I =2A; pulsed; t ≤300µs; - 0.72 0.85 V BEon CE C p voltage δ≤0.02; T =25°C amb t delay time V =12.5V; I =1A; I =0.05A; - 55 - ns d CC C Bon I =-0.05A; T =25°C t rise time Boff amb - 55 - ns r t turn-on time - 110 - ns on t storage time - 1220 - ns s t fall time - 230 - ns f t turn-off time - 1450 - ns off f transition frequency V =10V; I =100mA; f=100MHz; - 105 - MHz T CE C T =25°C amb C collector capacitance V =10V; I =0A; i =0A; - 50 - pF c CB E e f=1MHz; T =25°C amb PBSS4041NZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 8 August 2012 6 of 15

PBSS4041NZ Nexperia 60 V, 7 A NPN low VCEsat (BISS) transistor 006aac156 006aac157 1500 16.0 IB (mA) = 120 IC 108 hFE (A) 96 84 12.0 72 60 (1) 1000 48 36 (2) 24 8.0 12 500 (3) 4.0 0 0.0 10−1 1 10 102 103 104 105 0.0 1.0 2.0 3.0 4.0 5.0 IC (mA) VCE (V) V = 2 V T = 25 °C CE amb (1) T = 100 °C amb (2) T = 25 °C amb (3) T = −55 °C amb Fig 5. DC current gain as a function of collector Fig 6. Collector current as a function of current; typical values collector-emitter voltage; typical values 006aac158 006aac159 1.2 1.3 VBE VBEsat (V) (V) 0.8 (1) 0.9 (1) (2) (2) (3) 0.4 0.5 (3) 0.0 0.1 10−1 1 10 102 103 104 105 10−1 1 10 102 103 104 105 IC (mA) IC (mA) V = 2 V I /I = 20 CE C B (1) T = −55 °C (1) T = −55 °C amb amb (2) T = 25 °C (2) T = 25 °C amb amb (3) T = 100 °C (3) T = 100 °C amb amb Fig 7. Base-emitter voltage as a function of collector Fig 8. Base-emitter saturation voltage as a function of current; typical values collector current; typical values PBSS4041NZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 8 August 2012 7 of 15

PBSS4041NZ Nexperia 60 V, 7 A NPN low VCEsat (BISS) transistor 006aac160 006aac161 1 1 VCEsat VCEsat (V) (V) 10−1 10−1 (1) 10−2 (1) (2) 10−2 (2) (3) (3) 10−3 10−3 10−1 1 10 102 103 104 105 10−1 1 10 102 103 104 105 IC (mA) IC (mA) I /I = 20 T = 25 °C C B amb (1) T = 100 °C (1) I /I = 100 amb C B (2) T = 25 °C (2) I /I = 50 amb C B (3) T = −55 °C (3) I /I = 10 amb C B Fig 9. Collector-emitter saturation voltage as a Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values function of collector current; typical values 102 006aac162 103 006aac163 RC(ΩE)sat RC(ΩE)sat 102 10 10 1 1 (1) 10−1 (1) 10−1 (2) (2) (3) (3) 10−2 10−2 10−1 1 10 102 103 104 105 10−1 1 10 102 103 104 105 IC (mA) IC (mA) I /I = 20 T = 25 °C C B amb (1) T = 100 °C (1) I /I = 100 amb C B (2) T = 25 °C (2) I /I = 50 amb C B (3) T = −55 °C (3) I /I = 10 amb C B Fig 11. Collector-emitter saturation resistance as a Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values function of collector current; typical values PBSS4041NZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 8 August 2012 8 of 15

PBSS4041NZ Nexperia 60 V, 7 A NPN low VCEsat (BISS) transistor 8. Test information IB 90 % input pulse (idealized waveform) IBon (100 %) 10 % IBoff output pulse IC (idealized waveform) 90 % IC (100 %) 10 % t td tr ts tf ton toff 006aaa003 Fig 13. BISS transistor switching time definition VBB VCC RB RC (probe) Vo (probe) oscilloscope oscilloscope 450 Ω 450 Ω R2 VI DUT R1 mlb826 Fig 14. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standardQ101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBSS4041NZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 8 August 2012 9 of 15

PBSS4041NZ Nexperia 60 V, 7 A NPN low VCEsat (BISS) transistor 9. Package outline 6.7 6.3 1.8 3.1 1.5 2.9 4 1.1 0.7 7.3 3.7 6.7 3.3 1 2 3 0.8 0.32 2.3 0.6 0.22 4.6 Dimensions in mm 04-11-10 Fig 15. SOT223 (SC-73) 10. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 16. Reflow soldering footprint for SOT223 (SC-73) PBSS4041NZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 8 August 2012 10 of 15

PBSS4041NZ Nexperia 60 V, 7 A NPN low VCEsat (BISS) transistor 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 preferred transport direction during soldering 1.9 (3×) 2.7 2.7 1.9 1.1 (2×) sot223_fw Fig 17. Wave soldering footprint for SOT223 (SC-73) PBSS4041NZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 8 August 2012 11 of 15

PBSS4041NZ Nexperia 60 V, 7 A NPN low VCEsat (BISS) transistor 11. Revision history Table 8. Revision his tory Document ID Release date Data sheet status Change notice Supersedes PBSS4041NZ v.2 20120808 Product data sheet - PBSS4041NZ v.1 Modifications: • 7 “Characteristics”: V corrected CEsat • 12 “Legal information”: updated PBSS4041NZ v.1 20100331 Product data sheet - - PBSS4041NZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 8 August 2012 12 of 15

PBSS4041NZ Nexperia 60 V, 7 A NPN low VCEsat (BISS) transistor 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 12.2 Definitions Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without Preview — The document is a preview version only. The document is still limitation specifications and product descriptions, at any time and without subject to formal approval, which may result in modifications or additions. notice. This document supersedes and replaces all information supplied prior Nexperia does not give any representations or warranties as to to the publication hereof. the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive Draft — The document is a draft version only. The content is still under applications. Unless otherwise agreed in writing, the product is not designed, internal review and subject to formal approval, which may result in authorized or warranted to be suitable for use in life support, life-critical or modifications or additions. Nexperia does not give any safety-critical systems or equipment, nor in applications where failure or representations or warranties as to the accuracy or completeness of malfunction of a Nexperia product can reasonably be expected information included herein and shall have no liability for the consequences of to result in personal injury, death or severe property or environmental use of such information. damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or Short data sheet — A short data sheet is an extract from a full data sheet applications and therefore such inclusion and/or use is at the customer's own with the same product type number(s) and title. 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Nexperia makes no data sheet shall define the specification of the product as agreed between representation or warranty that such applications will be suitable for the Nexperia and its customer, unless Nexperia and specified use without further testing or modification. customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is Customers are responsible for the design and operation of their applications deemed to offer functions and qualities beyond those described in the and products using Nexperia products, and Nexperia Product data sheet. accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and 12.3 Disclaimers products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate Limited warranty and liability — Information in this document is believed to design and operating safeguards to minimize the risks associated with their be accurate and reliable. However, Nexperia does not give any applications and products. representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the Nexperia does not accept any liability related to any default, consequences of use of such information. Nexperia takes no damage, costs or problem which is based on any weakness or default in the responsibility for the content in this document if provided by an information customer’s applications or products, or the application or use by customer’s source outside of Nexperia. third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia In no event shall Nexperia be liable for any indirect, incidental, products in order to avoid a default of the applications and punitive, special or consequential damages (including - without limitation - lost the products or of the application or use by customer’s third party profits, lost savings, business interruption, costs related to the removal or customer(s). Nexperia does not accept any liability in this respect. replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of Limiting values — Stress above one or more limiting values (as defined in contract or any other legal theory. the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) Notwithstanding any damages that customer might incur for any reason operation of the device at these or any other conditions above those given in whatsoever, Nexperia’s aggregate and cumulative liability towards the Recommended operating conditions section (if present) or the customer for the products described herein shall be limited in accordance with theTerms and conditions of commercial sale of Nexperia. PBSS4041NZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 8 August 2012 13 of 15

PBSS4041NZ Nexperia 60 V, 7 A NPN low VCEsat (BISS) transistor Characteristics sections of this document is not warranted. Constant or Translations — A non-English (translated) version of a document is for repeated exposure to limiting values will permanently and irreversibly affect reference only. The English version shall prevail in case of any discrepancy the quality and reliability of the device. between the translated and English versions. Terms and conditions of commercial sale — Nexperia 12.4 Trademarks products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual Notice: All referenced brands, product names, service names and trademarks agreement is concluded only the terms and conditions of the respective are the property of their respective owners. agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 13. Contact information For more information, please visit:http://www.nexperia.com For sales office addresses, please send an email to:salesaddresses@nexperia.com PBSS4041NZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 8 August 2012 14 of 15

PBSS4041NZ Nexperia 60 V, 7 A NPN low VCEsat (BISS) transistor 14. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 6 Thermal characteristics . . . . . . . . . . . . . . . . . . .3 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . .9 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . .9 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . .10 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 13 Contact information. . . . . . . . . . . . . . . . . . . . . .14 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 08 August 2012