PBSS4021SP 20 V, 6.3 A PNP/PNP low V (BISS) transistor CEsat Rev. 2 — 11 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low V Breakthrough In Small Signal(BISS) transistor in a SOT96-1(SO8) CEsat medium power Surface-Mounted Device(SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement Nexperia Name PBSS4021SP SOT96-1 SO8 PBSS4021SN PBSS4021SPN 1.2 Features and benefits (cid:132) Low collector-emitter saturation voltage V CEsat (cid:132) High collector current capability I and I C CM (cid:132) High collector current gain(h ) at high I FE C (cid:132) High efficiency due to less heat generation (cid:132) Smaller required Printed-Circuit Board(PCB) area than for conventional transistors 1.3 Applications (cid:132) Loadswitch (cid:132) Battery-driven devices (cid:132) Power management (cid:132) Charging circuits (cid:132) Power switches (e.g. motors, fans) 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - −20 V CEO I collector current - - −6.3 A C I peak collector current single pulse; - - −15 A CM t ≤1ms p R collector-emitter I =−5A; I =−0.5A [1] - 36 54 mΩ CEsat C B saturation resistance [1] Pulse test: tp≤300μs; δ≤0.02.

PBSS4021SP Nexperia 20 V, 6.3 A PNP/PNP low V (BISS) transistor CEsat 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1 emitter TR1 8 5 8 7 6 5 2 base TR1 3 emitter TR2 TR1 TR2 4 base TR2 5 collector TR2 1 4 1 2 3 4 006aaa976 6 collector TR2 7 collector TR1 8 collector TR1 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PBSS4021SP SO8 plastic small outline package; 8leads; body width 3.9mm SOT96-1 4. Marking Table 5. Marking codes Type number Marking code PBSS4021SP 4021SP 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - −20 V CBO V collector-emitter voltage open base - −20 V CEO V emitter-base voltage open collector - −5 V EBO I collector current - −6.3 A C I peak collector current single pulse; t ≤1ms - −15 A CM p I base current - −1 A B P total power dissipation T ≤25°C [1] - 0.73 W tot amb [2] - 1 W [3] - 1.7 W PBSS4021SP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 11 October 2010 2 of 15

PBSS4021SP Nexperia 20 V, 6.3 A PNP/PNP low V (BISS) transistor CEsat Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device P total power dissipation T ≤25°C [1] - 0.86 W tot amb [2] - 1.4 W [3] - 2.3 W T junction temperature - 150 °C j T ambient temperature −55 +150 °C amb T storage temperature −65 +150 °C stg [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on a ceramic PCB, Al O , standard footprint. 2 3 006aac246 3.0 Ptot (W) (1) 2.0 (2) 1.0 (3) 0.0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al O , standard footprint 2 3 (2) FR4PCB, mounting pad for collector 1cm2 (3) FR4PCB, standard footprint Fig 1. Per device: Power derating curves PBSS4021SP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 11 October 2010 3 of 15

PBSS4021SP Nexperia 20 V, 6.3 A PNP/PNP low V (BISS) transistor CEsat 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor R thermal resistance from in free air [1] - - 170 K/W th(j-a) junction to ambient [2] - - 125 K/W [3] - - 75 K/W R thermal resistance from - - 40 K/W th(j-sp) junction to solder point Per device R thermal resistance from in free air [1] - - 145 K/W th(j-a) junction to ambient [2] - - 90 K/W [3] - - 55 K/W [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on a ceramic PCB, Al O , standard footprint. 2 3 103 006aac247 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4021SP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 11 October 2010 4 of 15

PBSS4021SP Nexperia 20 V, 6.3 A PNP/PNP low V (BISS) transistor CEsat 103 006aac248 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4PCB, mounting pad for collector 1cm2 Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 006aac249 duty cycle = 1 0.75 Zth(j-a) 0.5 (K/W) 0.33 0.2 10 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al O , standard footprint 2 3 Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4021SP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 11 October 2010 5 of 15

PBSS4021SP Nexperia 20 V, 6.3 A PNP/PNP low V (BISS) transistor CEsat 7. Characteristics Table 8. Characteristics T =25°C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit Per transistor I collector-base V =−20V; I =0A - - −100 nA CBO CB E cut-offcurrent V =−20V; I =0A; - -− 50 μA CB E T =150°C j I collector-emitter V =−16V; V =0V - - −100 nA CES CE BE cut-off current I emitter-base V =−5V; I =0A - - −100 nA EBO EB C cut-offcurrent h DCcurrent gain V =−2V [1] FE CE I =−500mA 250 400 - C I =−1A 250 400 - C I =−2A 200 350 - C I =−4A 150 300 - C I =−7A 80 200 - C V collector-emitter [1] CEsat saturation voltage I =−1A; I =−50mA - −45 −68 mV C B I =−1A; I =−10mA - −70 −115 mV C B I =−2A; I =−40mA - −100 −150 mV C B I =−4A; I =−200mA - −150 −225 mV C B I =−4A; I =−40mA - −250 −375 mV C B I =−6.5A; I =−325mA - −235 −350 mV C B R collector-emitter I =−5A; I =−500mA [1] - 36 54 mΩ CEsat C B saturation resistance V base-emitter [1] BEsat saturation voltage I =−1A; I =−100mA - −0.85 −1 V C B I =−4A; I =−400mA - −1 −1.2 V C B V base-emitter V =−2V; I =−2A [1] - −0.76 −0.85 V BEon CE C turn-onvoltage t delay time V =−12.5V; I =−1A; - 40 - ns d CC C I =−0.05A; I =0.05A t rise time Bon Boff - 55 - ns r t turn-on time - 95 - ns on t storage time - 340 - ns s t fall time - 85 - ns f t turn-off time - 425 - ns off f transition frequency V =−10V; I =−100mA; - 105 - MHz T CE C f=100MHz C collector capacitance V =−10V; I =i =0A; - 95 - pF c CB E e f=1MHz [1] Pulse test: tp≤300μs; δ≤0.02. PBSS4021SP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 11 October 2010 6 of 15

PBSS4021SP Nexperia 20 V, 6.3 A PNP/PNP low V (BISS) transistor CEsat 600 006aac250 −16.0 006aac251 IB (mA) = −200 (1) IC −180 hFE (A) −160 −140 −12.0 −120 400 (2) −100 −80 −60 −8.0 −40 (3) 200 −20 −4.0 0 0.0 −10−1 −1 −10 −102 −103 −104 −105 0.0 −1.0 −2.0 −3.0 −4.0 −5.0 IC (mA) VCE (V) VCE=−2V Tamb=25°C (1) Tamb=100°C (2) Tamb=25°C (3) Tamb=−55°C Fig 5. DCcurrent gain as a function of collector Fig 6. Collector current as a function of current; typical values collector-emitter voltage; typical values −1.4 006aac252 −1.4 006aac253 VBE VBEsat (V) (V) −1.0 −1.0 (1) (1) (2) −0.6 (2) −0.6 (3) (3) −0.2 −0.2 −10−1 −1 −10 −102 −103 −104 −105 −10−1 −1 −10 −102 −103 −104 −105 IC (mA) IC (mA) VCE=−2V IC/IB=20 (1) Tamb=−55°C (1) Tamb=−55°C (2) Tamb=25°C (2) Tamb=25°C (3) Tamb=100°C (3) Tamb=100°C Fig 7. Base-emitter voltage as a function of collector Fig 8. Base-emitter saturation voltage as a function current; typical values of collector current; typical values PBSS4021SP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 11 October 2010 7 of 15

PBSS4021SP Nexperia 20 V, 6.3 A PNP/PNP low V (BISS) transistor CEsat −1 006aac254 −1 006aac255 VCEsat VCEsat (V) (V) −10−1 −10−1 (1) (1) (2) (2) (3) −10−2 −10−2 (3) −10−3 −10−3 −10−1 −1 −10 −102 −103 −104 −105 −10−1 −1 −10 −102 −103 −104 −105 IC (mA) IC (mA) IC/IB=20 Tamb=25°C (1) Tamb=100°C (1) IC/IB=100 (2) Tamb=25°C (2) IC/IB=50 (3) Tamb=−55°C (3) IC/IB=10 Fig 9. Collector-emitter saturation voltage as a Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values function of collector current; typical values 103 006aac256 103 006aac257 RCEsat RCEsat (Ω) (Ω) 102 102 10 10 1 1 (1) (2) 10−1 (1) 10−1 (2) (3) (3) 10−2 10−2 −10−1 −1 −10 −102 −103 −104 −105 −10−1 −1 −10 −102 −103 −104 −105 IC (mA) IC (mA) IC/IB=20 Tamb=25°C (1) Tamb=100°C (1) IC/IB=100 (2) Tamb=25°C (2) IC/IB=50 (3) Tamb=−55°C (3) IC/IB=10 Fig 11. Collector-emitter saturation resistance as a Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values function of collector current; typical values PBSS4021SP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 11 October 2010 8 of 15

PBSS4021SP Nexperia 20 V, 6.3 A PNP/PNP low V (BISS) transistor CEsat 8. Test information −IB 90 % input pulse (idealized waveform) −IBon (100 %) 10 % −IBoff output pulse −IC (idealized waveform) 90 % −IC (100 %) 10 % t td tr ts tf ton toff 006aaa266 Fig 13. BISS transistor switching time definition VBB VCC RB RC (probe) Vo (probe) oscilloscope oscilloscope 450 Ω 450 Ω R2 VI DUT R1 mgd624 VCC=−12.5V; IC=−1A; IBon=−0.05A; IBoff=0.05A Fig 14. Test circuit for switching times PBSS4021SP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 11 October 2010 9 of 15

PBSS4021SP Nexperia 20 V, 6.3 A PNP/PNP low V (BISS) transistor CEsat 9. Package outline 5.0 1.75 4.8 1.0 0.4 6.2 4.0 5.8 3.8 pin 1 index 0.49 0.25 1.27 0.36 0.19 Dimensions in mm 03-02-18 Fig 15. Package outline SOT96-1(SO8) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 1000 2500 PBSS4021SP SOT96-1 8mm pitch, 12mm tape and reel -115 -118 [1] For further information and the availability of packing methods, see Section14. PBSS4021SP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 11 October 2010 10 of 15

PBSS4021SP Nexperia 20 V, 6.3 A PNP/PNP low V (BISS) transistor CEsat 11. Soldering 5.50 0.60 (8×) 1.30 4.00 6.60 7.00 1.27 (6×) solder lands occupied area placement accuracy ± 0.25 Dimensions in mm sot096-1_fr Fig 16. Reflow soldering footprint SOT96-1(SO8) 1.20 (2×) 0.60 (6×) 0.3 (2×) enlarged solder land 1.30 4.00 6.60 7.00 1.27 (6×) 5.50 board direction solder lands solder resist occupied area placement accurracy ± 0.25 Dimensions in mm sot096-1_fw Fig 17. Wave soldering footprint SOT96-1(SO8) PBSS4021SP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 11 October 2010 11 of 15

PBSS4021SP Nexperia 20 V, 6.3 A PNP/PNP low V (BISS) transistor CEsat 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS4021SP v.2 20101011 Product data sheet - PBSS4021SP v.1 Modifications: • Figure 1 “Per device: Power derating curves”: updated. PBSS4021SP v.1 20100714 Product data sheet - - PBSS4021SP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 11 October 2010 12 of 15

PBSS4021SP Nexperia 20 V, 6.3 A PNP/PNP low V (BISS) transistor CEsat 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 13.2 Definitions malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Draft — The document is a draft version only. The content is still under Nexperia products in such equipment or applications and internal review and subject to formal approval, which may result in therefore such inclusion and/or use is at the customer’s own risk. modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of Applications — Applications that are described herein for any of these information included herein and shall have no liability for the consequences of products are for illustrative purposes only. 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In no event however, damage, costs or problem which is based on any weakness or default in the shall an agreement be valid in which the Nexperia product is customer’s applications or products, or the application or use by customer’s deemed to offer functions and qualities beyond those described in the third party customer(s). Customer is responsible for doing all necessary Product data sheet. testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and 13.3 Disclaimers the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limited warranty and liability — Information in this document is believed to Limiting values — Stress above one or more limiting values (as defined in be accurate and reliable. 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Constant or In no event shall Nexperia be liable for any indirect, incidental, repeated exposure to limiting values will permanently and irreversibly affect punitive, special or consequential damages (including - without limitation - lost the quality and reliability of the device. profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such Terms and conditions of commercial sale — Nexperia damages are based on tort (including negligence), warranty, breach of products are sold subject to the general terms and conditions of commercial contract or any other legal theory. sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. 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This document supersedes and replaces all information supplied prior conveyance or implication of any license under any copyrights, patents or to the publication hereof. other industrial or intellectual property rights. Suitability for use — Nexperia products are not designed, Export control — This document as well as the item(s) described herein authorized or warranted to be suitable for use in life support, life-critical or may be subject to export control regulations. Export might require a prior safety-critical systems or equipment, nor in applications where failure or authorization from national authorities. PBSS4021SP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 11 October 2010 13 of 15

PBSS4021SP Nexperia 20 V, 6.3 A PNP/PNP low V (BISS) transistor CEsat Quick reference data — The Quick reference data is an extract of the 13.4 Trademarks product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com PBSS4021SP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 11 October 2010 14 of 15

PBSS4021SP Nexperia 20 V, 6.3 A PNP/PNP low V (BISS) transistor CEsat 15. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 11 October 2010