PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor 11 December 2012 Product data sheet 1. General description NPN low V Breakthrough In Small Signal (BISS) transistor in a medium power and CEsat flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PX. 2. Features and benefits • Very low collector-emitter saturation voltage V CEsat • High collector current capability I and I C CM • High collector current gain (h ) at high I FE C • High energy efficiency due to less heat generation • AEC-Q101 qualified • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 3. Applications • Loadswitch • Battery-driven devices • Power management • Charging circuits • Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 20 V CEO voltage I collector current - - 7 A C I peak collector current single pulse; t ≤ 1 ms - - 15 A CM p R collector-emitter I = 5 A; I = 500 mA; pulsed; - 19 28 mΩ CEsat C B saturation resistance t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb

Nexperia PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter 2 2 C collector 3 3 B base 1 3 2 1 sym042 SOT89 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4021NX SOT89 plastic surface-mounted package; die pad for good heat transfer; SOT89 3 leads 7. Marking Table 4. Marking codes Type number Marking code [1] PBSS4021NX %6D [1] % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 20 V CBO V collector-emitter voltage open base - 20 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 7 A C I peak collector current single pulse; t ≤ 1 ms - 15 A CM p I base current - 1 A B Ptot total power dissipation Tamb ≤ 25 °C [1] - 600 mW [2] - 1650 mW [3] - 2500 mW PBSS4021NX All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 December 2012 2 / 14

Nexperia PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor Symbol Parameter Conditions Min Max Unit T junction temperature - 150 °C j T ambient temperature -55 150 °C amb T storage temperature -65 150 °C stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aac174 3.0 Ptot (W) (1) 2.0 (2) 1.0 (3) 0.0 -75 -25 25 75 125 175 Tamb(°C) (1) Ceramic PCB, Al O , standard footprint 2 3 2 (2) FR4 PCB, mounting pad for collector 6 cm (3) FR4 PCB, standard footprint Fig. 1. Power derating curves 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance in free air [1] - - 210 K/W from junction to [2] - - 75 K/W ambient [3] - - 50 K/W R thermal resistance - - 20 K/W th(j-sp) from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. PBSS4021NX All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 December 2012 3 / 14

Nexperia PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor 103 006aac175 Zth(j-a) dutycycle=1 (K/W) 0.75 102 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp(s) FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 006aac176 dutycycle=1 0.75 Zth(j-a) 0.5 (K/W) 0.33 0.2 10 0.1 0.05 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp(s) 2 FR4 PCB, mounting pad for collector 6 cm Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4021NX All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 December 2012 4 / 14

Nexperia PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor 102 006aac177 dutycycle=1 Zth(j-a) 0.75 (K/W) 0.5 0.33 10 0.2 0.1 0.05 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp(s) Ceramic PCB, Al O , standard footprint 2 3 Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit I collector-base cut-off V = 20 V; I = 0 A; T = 25 °C - - 100 nA CBO CB E amb current V = 20 V; I = 0 A; T = 150 °C - - 50 µA CB E j I collector-emitter cut-off V = 16 V; V = 0 V; T = 25 °C - - 100 nA CES CE BE amb current I emitter-base cut-off V = 5 V; I = 0 A; T = 25 °C - - 100 nA EBO EB C amb current h DC current gain V = 2 V; I = 500 mA; pulsed; 300 550 - FE CE C t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb V = 2 V; I = 1 A; pulsed; t ≤ 300 µs; 300 550 - CE C p δ ≤ 0.02 ; T = 25 °C amb V = 2 V; I = 2 A; pulsed; t ≤ 300 µs; 300 500 - CE C p δ ≤ 0.02 ; T = 25 °C amb V = 2 V; I = 4 A; pulsed; t ≤ 300 µs; 250 450 - CE C p δ ≤ 0.02 ; T = 25 °C amb V = 2 V; I = 8 A; pulsed; t ≤ 300 µs; 100 200 - CE C p δ ≤ 0.02 ; T = 25 °C amb V collector-emitter I = 1 A; I = 50 mA; pulsed; - 25 38 mV CEsat C B saturation voltage t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb I = 1 A; I = 10 mA; pulsed; - 35 60 mV C B t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb PBSS4021NX All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 December 2012 5 / 14

Nexperia PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor Symbol Parameter Conditions Min Typ Max Unit I = 2 A; I = 40 mA; pulsed; - 48 75 mV C B t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb I = 4 A; I = 200 mA; pulsed; - 78 120 mV C B t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb I = 4 A; I = 40 mA; pulsed; - 85 140 mV C B t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb I = 7 A; I = 350 mA; pulsed; - 137 210 mV C B t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb R collector-emitter I = 5 A; I = 500 mA; pulsed; - 19 28 mΩ CEsat C B saturation resistance t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb V base-emitter saturation I = 1 A; I = 100 mA; pulsed; - 0.82 0.9 V BEsat C B voltage t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb I = 4 A; I = 400 mA; pulsed; - 0.92 1.05 V C B t ≤ 300 µs; δ ≤ 0.02 ; T = 25 °C p amb V base-emitter turn-on V = 2 V; I = 2 A; pulsed; t ≤ 300 µs; - 0.74 0.85 V BEon CE C p voltage δ ≤ 0.02 ; T = 25 °C amb t delay time V = 12.5 V; I = 1 A; I = 0.05 A; - 40 - ns d CC C Bon I = -0.05 A; T = 25 °C t rise time Boff amb - 40 - ns r t turn-on time - 80 - ns on t storage time - 650 - ns s t fall time V = 12.5 V; I = 1 A; I = 0.05 A; - 75 - ns f CC C Bon I = -0.05 A; T = 25 °C t turn-off time Boff amb - 725 - ns off f transition frequency V = 10 V; I = 100 mA; f = 100 MHz; - 115 - MHz T CE C T = 25 °C amb C collector capacitance V = 10 V; I = 0 A; i = 0 A; - 85 - pF c CB E e f = 1 MHz; T = 25 °C amb PBSS4021NX All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 December 2012 6 / 14

Nexperia PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor 006aac178 006aac179 1000 16.0 IB(mA)=70 63 hFE IC 56 (A) 49 800 42 12.0 (1) 35 28 600 (2) 21 8.0 14 400 (3) 4.0 7 200 0 0.0 10-1 1 10 102 103 104 105 0.0 1.0 2.0 3.0 4.0 5.0 IC(mA) VCE(V) V = 2 V T = 25 °C CE amb (1) T = 100 °C amb Fig. 6. Collector current as a function of collector- (2) T = 25 °C amb emitter voltage; typical values (3) T = −55 °C amb Fig. 5. DC current gain as a function of collector current; typical values 006aac180 006aac181 1.2 1.4 VBE VBEsat (V) (V) 0.8 (1) 1.0 (1) (2) (2) (3) 0.4 0.6 (3) 0.0 0.2 10-1 1 10 102 103 104 105 10-1 1 10 102 103 104 105 IC(mA) IC(mA) V = 2 V I /I = 20 CE C B (1) T = −55 °C (1) T = −55 °C amb amb (2) T = 25 °C (2) T = 25 °C amb amb (3) T = 100 °C (3) T = 100 °C amb amb Fig. 7. Base-emitter voltage as a function of collector Fig. 8. Base-emitter saturation voltage as a function of current; typical values collector current; typical values PBSS4021NX All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 December 2012 7 / 14

Nexperia PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor 006aac182 006aac183 1 1 VCEsat VCEsat (V) (V) 10-1 10-1 (1) (2) 10-2 (1) (3) (2) 10-2 10-3 (3) 10-3 10-4 10-1 1 10 102 103 104 105 10-1 1 10 102 103 104 105 IC(mA) IC(mA) I /I = 20 T = 25 °C C B amb (1) T = 100 °C (1) I /I = 100 amb C B (2) T = 25 °C (2) I /I = 50 amb C B (3) T = −55 °C (3) I /I = 10 amb C B Fig. 9. Collector-emitter saturation voltage as a Fig. 10. Collector-emitter saturation voltage as a function of collector current; typical values function of collector current; typical values 102 006aac184 103 006aac185 RCEsat RC(ΩEs)at (Ω) 102 10 10 (1) 1 1 (2) (1) 10-1 (2) (3) 10-1 (3) 10-2 10-2 10-1 1 10 102 103 104 10-1 1 10 102 103 104 105 IC(mA) IC(mA) I /I = 20 T = 25 °C C B amb (1) T = 100 °C (1) I /I = 100 amb C B (2) T = 25 °C (2) I /I = 50 amb C B (3) T = −55 °C (3) I /I = 10 amb C B Fig. 11. Collector-emitter saturation resistance as a Fig. 12. Collector-emitter saturation resistance as a function of collector current; typical values function of collector current; typical values PBSS4021NX All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 December 2012 8 / 14

Nexperia PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor 11. Test information IB 90% inputpulse (idealizedwaveform) IBon(100%) 10% IBoff outputpulse IC (idealizedwaveform) 90% IC(100%) 10% t td tr ts tf ton toff 006aaa003 Fig. 13. BISS transistor switching time definition VBB VCC RB RC (probe) Vo (probe) oscilloscope oscilloscope 450Ω 450Ω R2 VI DUT R1 mlb826 Fig. 14. Test circuit for switching times 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBSS4021NX All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 December 2012 9 / 14

Nexperia PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor 12. Package outline 4.6 4.4 1.6 1.8 1.4 1.4 2.6 2.4 4.25 3.75 1.2 1 2 3 0.8 0.53 0.40 0.48 0.44 1.5 0.35 0.23 3 Dimensionsinmm 06-08-29 Fig. 15. Package outline SOT89 13. Soldering 4.75 2.25 2 1.9 1.2 0.2 0.85 solderlands 1.7 solderresist 1.2 4.6 4.85 0.5 solderpaste occupiedarea 1 1.1 (3×) (2×) Dimensionsinmm 1.5 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig. 16. Reflow soldering footprint for SOT89 PBSS4021NX All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 December 2012 10 / 14

Nexperia PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor 6.6 2.4 3.5 solderlands 7.6 0.5 solderresist occupiedarea 1.8 (2×) Dimensionsinmm preferredtransportdirectionduringsoldering 1.9 1.9 1.5 0.7 (2×) 5.3 sot089_fw Fig. 17. Wave soldering footprint for SOT89 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBSS4021NX v.3 20121211 Product data sheet - PBSS4021NX v.2 Modifications: • Editorial update PBSS4021NX v.2 20121009 Product data sheet - PBSS4021NX v.1 PBSS4021NX v.1 20100401 Product data sheet - - PBSS4021NX All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 December 2012 11 / 14

Nexperia PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - 15. Legal information lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance Document Product Definition with the Terms and conditions of commercial sale of Nexperia. status [1][2] status [3] Objective Development This document contains data from Right to make changes — Nexperia reserves the right to [short] data the objective specification for product make changes to information published in this document, including without sheet development. limitation specifications and product descriptions, at any time and without Preliminary Qualification This document contains data from the notice. This document supersedes and replaces all information supplied prior [short] data preliminary specification. to the publication hereof. sheet Suitability for use in automotive applications — This Nexperia Product Production This document contains the product product has been qualified for use in automotive [short] data specification. applications. Unless otherwise agreed in writing, the product is not designed, sheet authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or [1] Please consult the most recently issued document before initiating or malfunction of a Nexperia product can reasonably be expected completing a design. to result in personal injury, death or severe property or environmental [2] The term 'short data sheet' is explained in section "Definitions". damage. Nexperia and its suppliers accept no liability for [3] The product status of device(s) described in this document may have inclusion and/or use of Nexperia products in such equipment or changed since this document was published and may differ in case of applications and therefore such inclusion and/or use is at the customer's own multiple devices. The latest product status information is available on risk. the Internet at URL http://www.nexperia.com. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 15.2 Definitions Applications — Applications that are described herein for any of these Preview — The document is a preview version only. The document is still products are for illustrative purposes only. Nexperia makes no subject to formal approval, which may result in modifications or additions. representation or warranty that such applications will be suitable for the Nexperia does not give any representations or warranties as to specified use without further testing or modification. the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia Draft — The document is a draft version only. The content is still under accepts no liability for any assistance with applications or internal review and subject to formal approval, which may result in customer product design. It is customer’s sole responsibility to determine modifications or additions. Nexperia does not give any whether the Nexperia product is suitable and fit for the representations or warranties as to the accuracy or completeness of customer’s applications and products planned, as well as for the planned information included herein and shall have no liability for the consequences application and use of customer’s third party customer(s). Customers should of use of such information. provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is Nexperia does not accept any liability related to any default, intended for quick reference only and should not be relied upon to contain damage, costs or problem which is based on any weakness or default detailed and full information. For detailed and full information see the in the customer’s applications or products, or the application or use by relevant full data sheet, which is available on request via the local Nexperia customer’s third party customer(s). Customer is responsible for doing all sales office. In case of any inconsistency or conflict with the necessary testing for the customer’s applications and products using Nexperia short data sheet, the full data sheet shall prevail. products in order to avoid a default of the applications and the products or of the application or use by customer’s third party Product specification — The information and data provided in a Product customer(s). Nexperia does not accept any liability in this respect. data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and Limiting values — Stress above one or more limiting values (as defined in customer have explicitly agreed otherwise in writing. In no event however, the Absolute Maximum Ratings System of IEC 60134) will cause permanent shall an agreement be valid in which the Nexperia product damage to the device. Limiting values are stress ratings only and (proper) is deemed to offer functions and qualities beyond those described in the operation of the device at these or any other conditions above those Product data sheet. given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 15.3 Disclaimers Terms and conditions of commercial sale — Nexperia Limited warranty and liability — Information in this document is believed products are sold subject to the general terms and conditions of commercial to be accurate and reliable. However, Nexperia does not give sale, as published at http://www.nexperia.com/profile/terms, unless otherwise any representations or warranties, expressed or implied, as to the accuracy agreed in a valid written individual agreement. In case an individual or completeness of such information and shall have no liability for the agreement is concluded only the terms and conditions of the respective consequences of use of such information. Nexperia takes no agreement shall apply. Nexperia hereby expressly objects to responsibility for the content in this document if provided by an information applying the customer’s general terms and conditions with regard to the source outside of Nexperia. purchase of Nexperia products by customer. PBSS4021NX All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 December 2012 12 / 14

Nexperia PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PBSS4021NX All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 December 2012 13 / 14

Nexperia PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor 16. Contents 1 General description ...............................................1 2 Features and benefits ............................................1 3 Applications ...........................................................1 4 Quick reference data .............................................1 5 Pinning information ...............................................2 6 Ordering information .............................................2 7 Marking ...................................................................2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................3 10 Characteristics .......................................................5 11 Test information .....................................................9 11.1 Quality information ......................................... 12 Package outline ...................................................10 13 Soldering ..............................................................10 14 Revision history ...................................................11 15 Legal information .................................................12 15.1 Data sheet status ...............................................12 15.2 Definitions ...........................................................12 15.3 Disclaimers .........................................................12 15.4 Trademarks ........................................................13 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 11 December 2012 PBSS4021NX All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 11 December 2012 14 / 14