PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor Rev. 3 — 26 July 2011 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) CEsat small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ. 1.2 Features and benefits  Low collector-emitter saturation  High efficiency due to less heat voltage V generation CEsat  High collector current capability  Smaller Printed-Circuit Board(PCB) I andI area than for conventional transistors C CM  High collector current gain (h ) at  AEC-Q101 qualified FE high I C 1.3 Applications  High-voltage DC-to-DC conversion  High-voltage power switches (e.g.motors, fans)  High-voltage MOSFET gate driving  Automotive applications  High-voltage motor control 1.4 Quick reference data Table 1. Quick refere nce data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -100 V CEO voltage I collector current - - -4.1 A C I peak collector current single pulse; t ≤1ms - - -8.2 A CM p R collector-emitter I =-4A; I =-400mA; pulsed; - 56 80 mΩ CEsat C B saturation resistance t ≤300µs; δ≤0.02; T =25°C p amb

PBSS306PZ Nexperia 100 V, 4.1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 B base 4 2, 4 2 C collector 3 E emitter 1 4 C collector 1 2 3 3 SOT223(SC-73) sym028 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version PBSS306PZ SC-73 plastic surface-mounted package with increased heatsink; SOT223 4leads 4. Marking Table 4. Marking cod es Type number Marking code PBSS306PZ S306PZ 5. Limiting values Table 5. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -100 V CBO V collector-emitter voltage open base - -100 V CEO V emitter-base voltage open collector - -5 V EBO I collector current - -4.1 A C I peak collector current single pulse; t ≤1ms - -8.2 A CM p P total power dissipation T ≤25°C [1] - 0.7 W tot amb [2] - 1.7 W [3] - 2 W T junction temperature - 150 °C j T ambient temperature -65 150 °C amb T storage temperature -65 150 °C stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al O , standard footprint. 2 3 PBSS306PZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 26 July 2011 2 of 15

PBSS306PZ Nexperia 100 V, 4.1 A PNP low VCEsat (BISS) transistor 006aaa560 2.5 Ptot (W) (1) 2.0 (2) 1.5 1.0 (3) 0.5 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al O , standard footprint 2 3 (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance in free air [1] - - 179 K/W th(j-a) from junction to [2] - - 74 K/W ambient [3] - - 63 K/W R thermal resistance - - 15 K/W th(j-sp) from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al O , standard footprint. 2 3 PBSS306PZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 26 July 2011 3 of 15

PBSS306PZ Nexperia 100 V, 4.1 A PNP low VCEsat (BISS) transistor 103 006aaa561 Zth(j-a) (K/W) δ = 1 102 0.75 0.50 0.33 0.20 0.10 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 006aaa562 δ = 1 0.75 Zth(j-a) 0.50 (K/W) 0.33 0.20 10 0.10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS306PZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 26 July 2011 4 of 15

PBSS306PZ Nexperia 100 V, 4.1 A PNP low VCEsat (BISS) transistor 102 006aaa563 δ = 1 Zth(j-a) 0.75 (K/W) 0.50 0.33 0.20 10 0.10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al O standard footprint 2 3 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characterist ics Symbol Parameter Conditions Min Typ Max Unit I collector-base cut-off V =-80V; I =0A; T =25°C - - -100 nA CBO CB E amb current V =-80V; I =0A; T =150°C; - - -50 µA CB E j T =25°C amb I collector-emitter cut-off V =-48V; V =0V; T =25°C - - -100 nA CES CE BE amb current I emitter-base cut-off V =-5V; I =0A; T =25°C - - -100 nA EBO EB C amb current h DC current gain V =-2V; I =-0.5A; pulsed; 200 300 - FE CE C t ≤300µs; δ≤0.02; T =25°C p amb V =-2V; I =-1A; pulsed; 150 260 - CE C t ≤300µs; δ≤0.02; T =25°C p amb V =-2V; I =-2A; pulsed; 100 175 - CE C t ≤300µs; δ≤0.02; T =25°C p amb V =-2V; I =-4A; pulsed; 25 40 - CE C t ≤300µs; δ≤0.02; T =25°C p amb V collector-emitter I =-0.5A; I =-50mA; pulsed; - -45 -65 mV CEsat C B saturation voltage t ≤300µs; δ≤0.02; T =25°C p amb I =-1A; I =-50mA; pulsed; - -90 -130 mV C B t ≤300µs; δ≤0.02; T =25°C p amb I =-4A; I =-400mA; pulsed; - -225 -320 mV C B t ≤300µs; δ≤0.02; T =25°C p amb I =-4.1A; I =-410mA; pulsed; - -230 -325 mV C B t ≤300µs; δ≤0.02; T =25°C p amb R collector-emitter I =-4A; I =-400mA; pulsed; - 56 80 mΩ CEsat C B saturation resistance t ≤300µs; δ≤0.02; T =25°C p amb PBSS306PZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 26 July 2011 5 of 15

PBSS306PZ Nexperia 100 V, 4.1 A PNP low VCEsat (BISS) transistor Table 7. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit V base-emitter saturation I =-1A; I =-100mA; pulsed; - -0.81 -0.9 V BEsat C B voltage t ≤300µs; δ≤0.02; T =25°C p amb I =-4A; I =-400mA; pulsed; - -0.93 -1.05 V C B t ≤300µs; δ≤0.02; T =25°C p amb V base-emitter turn-on V =-2V; I =-2A; pulsed; - -0.78 -0.85 V BEon CE C voltage t ≤300µs; δ≤0.02; T =25°C p amb t delay time V =-12.5V; I =-3A; I =-0.15A; - 15 - ns d CC C Bon I =0.15A; T =25°C t rise time Boff amb - 185 - ns r t turn-on time - 200 - ns on t storage time - 150 - ns s t fall time - 175 - ns f t turn-off time - 325 - ns off f transition frequency V =-10V; I =-100mA; - 100 - MHz T CE C f=100MHz; T =25°C amb C collector capacitance V =-10V; I =0A; i =0A; - 50 80 pF c CB E e f=1MHz; T =25°C amb 600 006aaa645 −14 006aaa651 IC (A) hFE −12 (1) IB (mA) = −1015 −10 −870 400 −725 −580 (2) −8 −435 −290 −6 −145 200 (3) −4 −2 0 0 −10−1 −1 −10 −102 −103 −104 0 −1 −2 −3 −4 −5 IC (mA) VCE (V) V = -2 V T = 25 °C CE amb (1) T = 100 °C amb (2) T = 25 °C amb (3) T = −55 °C amb Fig 5. DC current gain as a function of collector Fig 6. Collector current as a function of current; typical values collector-emitter voltage; typical values PBSS306PZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 26 July 2011 6 of 15

PBSS306PZ Nexperia 100 V, 4.1 A PNP low VCEsat (BISS) transistor −1.2 006aaa646 −1.2 006aaa649 VBE VBEsat (V) (V) −0.8 −0.8 (1) (1) (2) (2) −0.4 (3) −0.4 (3) 0 0 −10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104 IC (mA) IC (mA) V = -2 V I /I = 20 CE C B (1) T = −55 °C (1) T = −55 °C amb amb (2) T = 25 °C (2) T = 25 °C amb amb (3) T = 100 °C (3) T = 100 °C amb amb Fig 7. Base-emitter voltage as a function of collector Fig 8. Base-emitter saturation voltage as a function of current; typical values collector current; typical values −10 006aaa647 −10 006aaa648 VCEsat VCEsat (V) (V) −1 −1 −10−1 −10−1 (1) (1) (2) (2) (3) (3) −10−2 −10−2 −10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104 IC (mA) IC (mA) I /I = 20 T = 25 °C C B amb (1) T = 100 °C (1) I /I = 100 amb C B (2) T = 25 °C (2) I /I = 50 amb C B (3) T = −55 °C (3) I /I = 10 amb C B Fig 9. Collector-emitter saturation voltage as a Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values function of collector current; typical values PBSS306PZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 26 July 2011 7 of 15

PBSS306PZ Nexperia 100 V, 4.1 A PNP low VCEsat (BISS) transistor 103 006aaa650 103 006aaa652 RCEsat RCEsat (Ω) (Ω) 102 102 10 10 (1) 1 1 (2) (1) (3) (2) (3) 10−1 10−1 10−2 10−2 −10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104 IC (mA) IC (mA) I /I = 20 T = 25 °C C B amb (1) T = 100 °C (1) I /I = 100 amb C B (2) T = 25 °C (2) I /I = 50 amb C B (3) T = −55 °C (3) I /I = 10 amb C B Fig 11. Collector-emitter saturation resistance as a Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values function of collector current; typical values PBSS306PZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 26 July 2011 8 of 15

PBSS306PZ Nexperia 100 V, 4.1 A PNP low VCEsat (BISS) transistor 8. Test information −IB 90 % input pulse (idealized waveform) −IBon (100 %) 10 % −IBoff output pulse −IC (idealized waveform) 90 % −IC (100 %) 10 % t td tr ts tf ton toff 006aaa266 Fig 13. BISS transistor switching time definition VBB VCC RB RC (probe) Vo (probe) oscilloscope oscilloscope 450 Ω 450 Ω R2 VI DUT R1 mgd624 V = -12.5 V; I = -3 A; I = -0.15 A; I = 0.15 A CC C Bon Boff Fig 14. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors and is suitable for use in automotive applications. PBSS306PZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 26 July 2011 9 of 15

PBSS306PZ Nexperia 100 V, 4.1 A PNP low VCEsat (BISS) transistor 9. Package outline Plastic surface-mounted package with increased heatsink; 4 leads SOT223 D B E A X c y HE v M A b1 4 Q A A1 1 2 3 Lp e1 bp w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y 1.8 0.10 0.80 3.1 0.32 6.7 3.7 7.3 1.1 0.95 mm 4.6 2.3 0.2 0.1 0.1 1.5 0.01 0.60 2.9 0.22 6.3 3.3 6.7 0.7 0.85 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-11-10 SOT223 SC-73 06-03-16 Fig 15. Package outline SOT223 (SC-73) PBSS306PZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 26 July 2011 10 of 15

PBSS306PZ Nexperia 100 V, 4.1 A PNP low VCEsat (BISS) transistor 10. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 16. Reflow soldering footprint for SOT223 (SC-73) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 preferred transport direction during soldering 1.9 (3×) 2.7 2.7 1.9 1.1 (2×) sot223_fw Fig 17. Wave soldering footprint for SOT223 (SC-73) PBSS306PZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 26 July 2011 11 of 15

PBSS306PZ Nexperia 100 V, 4.1 A PNP low VCEsat (BISS) transistor 11. Revision history Table 8. Revision his tory Document ID Release date Data sheet status Change notice Supersedes PBSS306PZ v.3 20110726 Product data sheet - PBSS306PZ v.2 Modifications: • 1.2 “Features and benefits” updated • In 7 “Characteristics” new parameter added, I CES • Fig 15. updated • 12 “Legal information” updated PBSS306PZ v.2 20091211 Product data sheet - PBSS306PZ v.1 PBSS306PZ v.1 20060920 Product data sheet - - PBSS306PZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 26 July 2011 12 of 15

PBSS306PZ Nexperia 100 V, 4.1 A PNP low VCEsat (BISS) transistor 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 12.2 Definitions Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or Draft — The document is a draft version only. The content is still under safety-critical systems or equipment, nor in applications where failure or internal review and subject to formal approval, which may result in malfunction of a Nexperia product can reasonably be expected modifications or additions. Nexperia does not give any to result in personal injury, death or severe property or environmental representations or warranties as to the accuracy or completeness of damage. Nexperia accepts no liability for inclusion and/or use of information included herein and shall have no liability for the consequences of Nexperia products in such equipment or applications and use of such information. therefore such inclusion and/or use is at the customer’s own risk. Short data sheet — A short data sheet is an extract from a full data sheet Quick reference data — The Quick reference data is an extract of the with the same product type number(s) and title. A short data sheet is intended product data given in the Limiting values and Characteristics sections of this for quick reference only and should not be relied upon to contain detailed and document, and as such is not complete, exhaustive or legally binding. full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales Applications — Applications that are described herein for any of these office. In case of any inconsistency or conflict with the short data sheet, the products are for illustrative purposes only. Nexperia makes no full data sheet shall prevail. representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Customers are responsible for the design and operation of their applications Nexperia and its customer, unless Nexperia and and products using Nexperia products, and Nexperia customer have explicitly agreed otherwise in writing. In no event however, accepts no liability for any assistance with applications or customer product shall an agreement be valid in which the Nexperia product is design. It is customer’s sole responsibility to determine whether the Nexperia deemed to offer functions and qualities beyond those described in the product is suitable and fit for the customer’s applications and Product data sheet. products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their 12.3 Disclaimers applications and products. Limited warranty and liability — Information in this document is believed to Nexperia does not accept any liability related to any default, be accurate and reliable. However, Nexperia does not give any damage, costs or problem which is based on any weakness or default in the representations or warranties, expressed or implied, as to the accuracy or customer’s applications or products, or the application or use by customer’s completeness of such information and shall have no liability for the third party customer(s). Customer is responsible for doing all necessary consequences of use of such information. testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and In no event shall Nexperia be liable for any indirect, incidental, the products or of the application or use by customer’s third party punitive, special or consequential damages (including - without limitation - lost customer(s). Nexperia does not accept any liability in this respect. profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such Limiting values — Stress above one or more limiting values (as defined in damages are based on tort (including negligence), warranty, breach of the Absolute Maximum Ratings System of IEC 60134) will cause permanent contract or any other legal theory. damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in Notwithstanding any damages that customer might incur for any reason the Recommended operating conditions section (if present) or the whatsoever, Nexperia’s aggregate and cumulative liability towards Characteristics sections of this document is not warranted. Constant or customer for the products described herein shall be limited in accordance repeated exposure to limiting values will permanently and irreversibly affect with the Terms and conditions of commercial sale of Nexperia. the quality and reliability of the device. Right to make changes — Nexperia reserves the right to make Terms and conditions of commercial sale — Nexperia changes to information published in this document, including without products are sold subject to the general terms and conditions of commercial limitation specifications and product descriptions, at any time and without sale, as published at http://www.nexperia.com/profile/terms, unless otherwise notice. This document supersedes and replaces all information supplied prior agreed in a valid written individual agreement. In case an individual to the publication hereof. agreement is concluded only the terms and conditions of the respective PBSS306PZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 26 July 2011 13 of 15

PBSS306PZ Nexperia 100 V, 4.1 A PNP low VCEsat (BISS) transistor agreement shall apply. Nexperia hereby expressly objects to 12.4 Trademarks applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 13. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com PBSS306PZ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 — 26 July 2011 14 of 15

PBSS306PZ Nexperia 100 V, 4.1 A PNP low VCEsat (BISS) transistor 14. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 6 Thermal characteristics . . . . . . . . . . . . . . . . . . .3 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . .10 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 13 Contact information. . . . . . . . . . . . . . . . . . . . . .14 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 26 July 2011