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PBSS306NX 100 V, 4.5 A NPN low V (BISS) transistor CEsat Rev. 02 — 8 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT89 CEsat (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PX. 1.2 Features (cid:132) Low collector-emitter saturation voltage V CEsat (cid:132) High collector current capability I and I C CM (cid:132) High collector current gain (h ) at high I FE C (cid:132) High efficiency due to less heat generation (cid:132) Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications (cid:132) High-voltage DC-to-DC conversion (cid:132) High-voltage MOSFET gate driving (cid:132) High-voltage motor control (cid:132) High-voltage power switches (e.g. motors, fans) (cid:132) Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 100 V CEO I collector current - - 4.5 A C I peak collector current single pulse; - - 9 A CM t ≤1ms p R collector-emitter saturation I =4A; [1] - 40 56 mΩ CEsat C resistance I =200mA B [1] Pulse test: tp≤300μs; δ≤0.02.

PBSS306NX NXP Semiconductors 100 V, 4.5 A NPN low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 emitter 2 2 collector 3 base 3 1 3 2 1 sym042 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS306NX SC-62 plastic surface-mounted package; collector pad for good SOT89 heat transfer; 3leads 4. Marking Table 4. Marking codes Type number Marking code[1] PBSS306NX *5G [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBSS306NX_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 8 December 2009 2 of 15

PBSS306NX NXP Semiconductors 100 V, 4.5 A NPN low V (BISS) transistor CEsat 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 100 V CBO V collector-emitter voltage open base - 100 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 4.5 A C I peak collector current single pulse; - 9 A CM t ≤1ms p P total power dissipation T ≤25°C [1] - 0.6 W tot amb [2] - 1.65 W [3] - 2.1 W T junction temperature - 150 °C j T ambient temperature −65 +150 °C amb T storage temperature −65 +150 °C stg [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2. [3] Device mounted on a ceramicPCB, Al O , standard footprint. 2 3 006aaa556 2.5 Ptot (W) (1) 2.0 (2) 1.5 1.0 (3) 0.5 0 −75 −25 25 75 125 175 Tamb (°C) (1) CeramicPCB, Al O , standard footprint 2 3 (2) FR4PCB, mounting pad for collector 6cm2 (3) FR4PCB, standard footprint Fig 1. Power derating curves PBSS306NX_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 8 December 2009 3 of 15

PBSS306NX NXP Semiconductors 100 V, 4.5 A NPN low V (BISS) transistor CEsat 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air [1] - - 208 K/W th(j-a) junction to ambient [2] - - 76 K/W [3] - - 60 K/W R thermal resistance from - - 20 K/W th(j-sp) junction to solder point [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2. [3] Device mounted on a ceramicPCB, Al O , standard footprint. 2 3 103 006aaa557 Zth(j-a) (K/W) δ = 1 0.75 102 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS306NX_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 8 December 2009 4 of 15

PBSS306NX NXP Semiconductors 100 V, 4.5 A NPN low V (BISS) transistor CEsat 102 006aaa558 δ = 1 0.75 Zth(j-a) 0.50 (K/W) 0.33 0.20 10 0.10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4PCB, mounting pad for collector 6cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 006aaa559 δ = 1 Zth(j-a) 0.75 (K/W) 0.50 0.33 0.20 10 0.10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) CeramicPCB, Al O , standard footprint 2 3 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS306NX_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 8 December 2009 5 of 15

PBSS306NX NXP Semiconductors 100 V, 4.5 A NPN low V (BISS) transistor CEsat 7. Characteristics Table 7. Characteristics T =25°C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit I collector-base cut-off V =80V; I =0A - - 100 nA CBO CB E current V =80V; I =0A; - - 50 μA CB E T =150°C j I emitter-base cut-off V =5V; I =0A - - 100 nA EBO EB C current h DCcurrent gain V =2V; I =0.5A [1] 200 330 - FE CE C V =2V; I =1A [1] 150 270 - CE C V =2V; I =2A [1] 100 175 - CE C V =2V; I =4A [1] 50 85 - CE C V =2V; I =5A [1] 40 70 - CE C V collector-emitter I =0.5A; I =50mA [1] - 27 40 mV CEsat C B saturation voltage I =1A; I =50mA [1] - 53 75 mV C B I =1A; I =10mA [1] - 100 150 mV C B I =2A; I =40mA [1] - 115 160 mV C B I =4A; I =200mA [1] - 160 225 mV C B I =4A; I =400mA [1] - 140 200 mV C B I =4.5A; I =225mA [1] - 170 245 mV C B R collector-emitter I =4A; I =200mA [1] - 40 56 mΩ CEsat C B saturation resistance V base-emitter saturation I =1A; I =100mA [1] - 0.81 0.9 V BEsat C B voltage I =4A; I =400mA [1] - 0.94 1.05 V C B V base-emitter turn-on V =2V; I =2A [1] - 0.78 0.85 V BEon CE C voltage t delay time V =12.5V; I =3A; - 15 - ns d CC C I =0.15A; t rise time Bon - 315 - ns r I =−0.15A Boff t turn-on time - 330 - ns on t storage time - 240 - ns s t fall time - 290 - ns f t turn-off time - 530 - ns off f transition frequency V =10V; I =100mA; - 110 - MHz T CE C f=100MHz C collector capacitance V =10V; I =i =0A; - 23 40 pF c CB E e f=1MHz [1] Pulse test: tp≤300μs; δ≤0.02. PBSS306NX_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 8 December 2009 6 of 15

PBSS306NX NXP Semiconductors 100 V, 4.5 A NPN low V (BISS) transistor CEsat 006aaa637 006aaa643 600 14 IC (A) hFE 12 IB (mA) = 500 450 (1) 400 350 10 300 400 250 200 (2) 8 150 100 6 50 200 (3) 4 2 0 0 10−1 1 10 102 103 104 0 1 2 3 4 5 IC (mA) VCE (V) VCE=2V Tamb=25°C (1) Tamb=100°C (2) Tamb=25°C (3) Tamb=−55°C Fig 5. DCcurrent gain as a function of collector Fig 6. Collector current as a function of current; typical values collector-emitter voltage; typical values 006aaa638 006aaa641 1.2 1.2 VBE VBEsat (V) (V) 0.8 0.8 (1) (1) (2) (2) 0.4 (3) 0.4 (3) 0 0 10−1 1 10 102 103 104 10−1 1 10 102 103 104 IC (mA) IC (mA) V =2V I /I =20 CE C B (1) Tamb=−55°C (1) Tamb=−55°C (2) Tamb=25°C (2) Tamb=25°C (3) Tamb=100°C (3) Tamb=100°C Fig 7. Base-emitter voltage as a function of collector Fig 8. Base-emitter saturation voltage as a function current; typical values of collector current; typical values PBSS306NX_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 8 December 2009 7 of 15

PBSS306NX NXP Semiconductors 100 V, 4.5 A NPN low V (BISS) transistor CEsat 006aaa639 006aaa640 1 10 VCEsat (V) VCEsat 1 (V) 10−1 10−1 (1) (2) (1) (2) (3) 10−2 (3) 10−2 10−3 10−1 1 10 102 103 104 10−1 1 10 102 103 104 IC (mA) IC (mA) IC/IB=20 Tamb=25°C (1) Tamb=100°C (1) IC/IB=100 (2) Tamb=25°C (2) IC/IB=50 (3) Tamb=−55°C (3) IC/IB=10 Fig 9. Collector-emitter saturation voltage as a Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values function of collector current; typical values 103 006aaa642 103 006aaa644 RCEsat RCEsat (Ω) (Ω) 102 102 10 10 1 1 (1) (1) (2) 10−1 (2) 10−1 (3) (3) 10−2 10−2 10−1 1 10 102 103 104 10−1 1 10 102 103 104 IC (mA) IC (mA) IC/IB=20 Tamb=25°C (1) Tamb=100°C (1) IC/IB=100 (2) Tamb=25°C (2) IC/IB=50 (3) Tamb=−55°C (3) IC/IB=10 Fig 11. Collector-emitter saturation resistance as a Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values function of collector current; typical values PBSS306NX_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 8 December 2009 8 of 15

PBSS306NX NXP Semiconductors 100 V, 4.5 A NPN low V (BISS) transistor CEsat 8. Test information IB 90 % input pulse (idealized waveform) IBon (100 %) 10 % IBoff output pulse IC (idealized waveform) 90 % IC (100 %) 10 % t td tr ts tf ton toff 006aaa003 Fig 13. BISS transistor switching time definition VBB VCC RB RC (probe) Vo (probe) oscilloscope oscilloscope 450 Ω 450 Ω R2 VI DUT R1 mlb826 VCC=12.5V; IC=3A; IBon=0.15A; IBoff=−0.15A Fig 14. Test circuit for switching times PBSS306NX_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 8 December 2009 9 of 15

PBSS306NX NXP Semiconductors 100 V, 4.5 A NPN low V (BISS) transistor CEsat 9. Package outline 4.6 4.4 1.6 1.8 1.4 1.4 2.6 2.4 4.25 3.75 1.2 1 2 3 0.8 0.53 0.40 0.48 0.44 1.5 0.35 0.23 3 Dimensions in mm 06-08-29 Fig 15. Package outline SOT89 (SC-62/TO-243) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 1000 4000 PBSS306NX SOT89 8mm pitch, 12mm tape and reel -115 -135 [1] For further information and the availability of packing methods, see Section15. PBSS306NX_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 8 December 2009 10 of 15

PBSS306NX NXP Semiconductors 100 V, 4.5 A NPN low V (BISS) transistor CEsat 11. Soldering 4.75 2.25 2.00 1.90 1.20 solder lands 0.85 0.20 solder resist occupied area 1.70 1.20 solder paste 4.60 4.85 Dimensions in mm 0.50 1.20 1.20 1.00 3 2 1 (3x) msa442 0.60 (3x) 0.70 (3x) 3.70 3.95 SOT89 standard mounting conditions for reflow soldering Fig 16. Reflow soldering footprint 6.60 2.40 2 3.50 7.60 solder lands 0.50 3 1 1.20 solder resist occupied area 3.00 Dimensions in mm preferred transport direction during soldering 1.50 0.70 5.30 msa423 Not recommended for wave soldering Fig 17. Wave soldering footprint PBSS306NX_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 8 December 2009 11 of 15

PBSS306NX NXP Semiconductors 100 V, 4.5 A NPN low V (BISS) transistor CEsat 12. Mounting 32 mm 30 mm 32 mm 20 2.5 mm mm 40 40 mm 1 mm mm 3 mm 2.5 mm 2.5 mm 1 mm 1 mm 0.5 mm 0.5 mm 5 mm 5 mm 3.96 mm 3.96 mm 1.6 mm 1.6 mm 001aaa234 001aaa235 PCBthickness: PCBthickness =1.6mm FR4PCB =1.6mm ceramicPCB =0.635mm Fig 18. FR4PCB, standard footprint; Fig 19. FR4PCB, mounting pad for ceramicPCB, Al O , standard collector 6cm2 2 3 footprint PBSS306NX_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 8 December 2009 12 of 15

PBSS306NX NXP Semiconductors 100 V, 4.5 A NPN low V (BISS) transistor CEsat 13. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS306NX_2 20091208 Product data sheet - PBSS306NX_1 Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 15 “Package outline SOT89 (SC-62/TO-243)”: updated • Figure 16 “Reflow soldering footprint”: updated • Figure 17 “Wave soldering footprint”: updated PBSS306NX_1 20060821 Product data sheet - - PBSS306NX_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 8 December 2009 13 of 15

PBSS306NX NXP Semiconductors 100 V, 4.5 A NPN low V (BISS) transistor CEsat 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 14.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications — Applications that are described herein for any of these modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the information included herein and shall have no liability for the consequences of specified use without further testing or modification. use of such information. 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This document supersedes and replaces all information supplied prior to the publication hereof. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this Suitability for use — NXP Semiconductors products are not designed, document, and as such is not complete, exhaustive or legally binding. authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected 14.4 Trademarks to result in personal injury, death or severe property or environmental Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PBSS306NX_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 8 December 2009 14 of 15

PBSS306NX NXP Semiconductors 100 V, 4.5 A NPN low V (BISS) transistor CEsat 16. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 15 Contact information. . . . . . . . . . . . . . . . . . . . . 14 16 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 8 December 2009 Document identifier: PBSS306NX_2