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PBSS303PZ 30 V, 5.3 A PNP low V (BISS) transistor CEsat Rev. 02 — 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) CEsat small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS303NZ. 1.2 Features (cid:132) Low collector-emitter saturation voltage V CEsat (cid:132) High collector current capability I and I C CM (cid:132) High collector current gain (h ) at high I FE C (cid:132) High efficiency due to less heat generation (cid:132) Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications (cid:132) DC-to-DC conversion (cid:132) MOSFET gate driving (cid:132) Motor control (cid:132) Charging circuits (cid:132) Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - −30 V CEO I collector current - - −5.3 A C I peak collector current single pulse; - - −10.6 A CM t ≤1ms p R collector-emitter I =−4A; [1] - 36 53 mΩ CEsat C saturation resistance I =−200mA B [1] Pulse test: tp≤300μs; δ≤0.02.

PBSS303PZ NXP Semiconductors 30 V, 5.3 A PNP low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 base 4 2, 4 2 collector 3 emitter 1 4 collector 1 2 3 3 sym028 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS303PZ SC-73 plastic surface-mounted package with increased heat SOT223 sink; 4leads 4. Marking Table 4. Marking codes Type number Marking code PBSS303PZ S303PZ PBSS303PZ_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 November 2009 2 of 14

PBSS303PZ NXP Semiconductors 30 V, 5.3 A PNP low V (BISS) transistor CEsat 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - −30 V CBO V collector-emitter voltage open base - −30 V CEO V emitter-base voltage open collector - −5 V EBO I collector current - −5.3 A C I peak collector current single pulse; - −10.6 A CM t ≤1ms p P total power dissipation T ≤25°C [1] - 0.7 W tot amb [2] - 1.7 W [3] - 2 W T junction temperature - 150 °C j T ambient temperature −65 +150 °C amb T storage temperature −65 +150 °C stg [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2. [3] Device mounted on a ceramic PCB, Al O , standard footprint. 2 3 006aaa560 2.5 Ptot (W) (1) 2.0 (2) 1.5 1.0 (3) 0.5 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al O , standard footprint 2 3 (2) FR4PCB, mounting pad for collector 6cm2 (3) FR4PCB, standard footprint Fig 1. Power derating curves PBSS303PZ_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 November 2009 3 of 14

PBSS303PZ NXP Semiconductors 30 V, 5.3 A PNP low V (BISS) transistor CEsat 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air [1] - - 179 K/W th(j-a) junction to ambient [2] - - 74 K/W [3] - - 63 K/W R thermal resistance from - - 15 K/W th(j-sp) junction to solder point [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2. [3] Device mounted on a ceramic PCB, Al O , standard footprint. 2 3 103 006aaa561 Zth(j-a) (K/W) δ = 1 102 0.75 0.50 0.33 0.20 0.10 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS303PZ_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 November 2009 4 of 14

PBSS303PZ NXP Semiconductors 30 V, 5.3 A PNP low V (BISS) transistor CEsat 102 006aaa562 δ = 1 0.75 Zth(j-a) 0.50 (K/W) 0.33 0.20 10 0.10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4PCB, mounting pad for collector 6cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 006aaa563 δ = 1 Zth(j-a) 0.75 (K/W) 0.50 0.33 0.20 10 0.10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al O , standard footprint 2 3 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS303PZ_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 November 2009 5 of 14

PBSS303PZ NXP Semiconductors 30 V, 5.3 A PNP low V (BISS) transistor CEsat 7. Characteristics Table 7. Characteristics T =25°C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit I collector-base cut-off V =−30V; I =0A - - −100 nA CBO CB E current V =−30V; I =0A; - - −50 μA CB E T =150°C j I emitter-base cut-off V =−5V; I =0A - - −100 nA EBO EB C current h DCcurrent gain V =−2V; I =−0.5A [1] 250 400 - FE CE C V =−2V; I =−1A [1] 250 350 - CE C V =−2V; I =−2A [1] 200 300 - CE C V =−2V; I =−4A [1] 130 200 - CE C V =−2V; I =−7A [1] 80 120 - CE C V collector-emitter I =−0.5A; I =−50mA [1] - −25 −35 mV CEsat C B saturation voltage I =−1A; I =−50mA [1] - −50 −70 mV C B I =−1A; I =−10mA [1] - −75 −105 mV C B I =−2A; I =−40mA [1] - −100 −140 mV C B I =−4A; I =−200mA [1] - −145 −210 mV C B I =−4A; I =−400mA [1] - −135 −190 mV C B I =−4A; I =−40mA [1] - −245 −370 mV C B I =−5.3A; I =−265mA [1] - −185 −265 mV C B R collector-emitter I =−4A; I =−200mA [1] - 36 53 mΩ CEsat C B saturation resistance I =−4A; I =−40mA [1] - 61 92 mΩ C B V base-emitter I =−1A; I =−100mA [1] - −0.82 −0.9 V BEsat C B saturation voltage I =−4A; I =−400mA [1] - −0.93 −1.05 V C B V base-emitter turn-on V =−2V; I =−2A [1] - −0.76 −0.85 V BEon CE C voltage t delay time V =−12.5V; I =−3A; - 15 - ns d CC C I =−0.15A; t rise time Bon - 55 - ns r I =0.15A Boff t turn-on time - 70 - ns on t storage time - 215 - ns s t fall time - 105 - ns f t turn-off time - 320 - ns off f transition frequency V =−10V; I =−100mA; - 130 - MHz T CE C f=100MHz C collector capacitance V =−10V; I =i =0A; - 110 160 pF c CB E e f=1MHz [1] Pulse test: tp≤300μs; δ≤0.02. PBSS303PZ_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 November 2009 6 of 14

PBSS303PZ NXP Semiconductors 30 V, 5.3 A PNP low V (BISS) transistor CEsat 1000 006aaa596 −14 006aaa604 IC hFE (A) IB (mA) = −150 −12 −135 800 −120 −105 (1) −10 −90 −75 600 −8 −−6405 −6 −30 400 (2) −4 −15 200 (3) −2 0 0 −10−1 −1 −10 −102 −103 −104 0 −1 −2 −3 −4 −5 IC (mA) VCE (V) VCE=−2V Tamb=25°C (1) Tamb=100°C (2) Tamb=25°C (3) Tamb=−55°C Fig 5. DCcurrent gain as a function of collector Fig 6. Collector current as a function of current; typical values collector-emitter voltage; typical values −1.2 006aaa597 −1.2 006aaa600 VBE VBEsat (V) (V) −0.8 −0.8 (1) (1) (2) (2) −0.4 −0.4 (3) (3) 0 0 −10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104 IC (mA) IC (mA) VCE=−2V IC/IB=20 (1) Tamb=−55°C (1) Tamb=−55°C (2) Tamb=25°C (2) Tamb=25°C (3) Tamb=100°C (3) Tamb=100°C Fig 7. Base-emitter voltage as a function of collector Fig 8. Base-emitter saturation voltage as a function current; typical values of collector current; typical values PBSS303PZ_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 November 2009 7 of 14

PBSS303PZ NXP Semiconductors 30 V, 5.3 A PNP low V (BISS) transistor CEsat −1 006aaa598 −10 006aaa599 VCEsat VCEsat (V) (V) −1 −10−1 −10−1 (1) (1) −10−2 ((32)) (2) −10−2 (3) −10−3 −10−3 −10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104 IC (mA) IC (mA) IC/IB=20 Tamb=25°C (1) Tamb=100°C (1) IC/IB=100 (2) Tamb=25°C (2) IC/IB=50 (3) Tamb=−55°C (3) IC/IB=10 Fig 9. Collector-emitter saturation voltage as a Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values function of collector current; typical values 102 006aaa601 103 006aaa603 RC(ΩE)sat RC(ΩE)sat (1) 102 (2) 10 (3) 10 (1) (2) 1 (3) 1 10−1 10−1 10−2 10−2 −10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104 IC (mA) IC (mA) IC/IB=20 Tamb=25°C (1) Tamb=100°C (1) IC/IB=100 (2) Tamb=25°C (2) IC/IB=50 (3) Tamb=−55°C (3) IC/IB=10 Fig 11. Collector-emitter saturation resistance as a Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values function of collector current; typical values PBSS303PZ_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 November 2009 8 of 14

PBSS303PZ NXP Semiconductors 30 V, 5.3 A PNP low V (BISS) transistor CEsat 8. Test information −IB 90 % input pulse (idealized waveform) −IBon (100 %) 10 % −IBoff output pulse −IC (idealized waveform) 90 % −IC (100 %) 10 % t td tr ts tf ton toff 006aaa266 Fig 13. BISS transistor switching time definition VBB VCC RB RC (probe) Vo (probe) oscilloscope oscilloscope 450 Ω 450 Ω R2 VI DUT R1 mgd624 VCC=−12.5V; IC=−3A; IBon=−0.15A; IBoff=0.15A Fig 14. Test circuit for switching times PBSS303PZ_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 November 2009 9 of 14

PBSS303PZ NXP Semiconductors 30 V, 5.3 A PNP low V (BISS) transistor CEsat 9. Package outline 6.7 6.3 1.8 3.1 1.5 2.9 4 1.1 0.7 7.3 3.7 6.7 3.3 1 2 3 0.8 0.32 2.3 0.6 0.22 4.6 Dimensions in mm 04-11-10 Fig 15. Package outline SOT223 (SC-73) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 1000 4000 PBSS303PZ SOT223 8mm pitch, 12mm tape and reel -115 -135 [1] For further information and the availability of packing methods, see Section14. PBSS303PZ_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 November 2009 10 of 14

PBSS303PZ NXP Semiconductors 30 V, 5.3 A PNP low V (BISS) transistor CEsat 11. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 16. Reflow soldering footprint SOT223 (SC-73) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 preferred transport direction during soldering 1.9 (3×) 2.7 2.7 1.9 1.1 (2×) sot223_fw Fig 17. Wave soldering footprint SOT223 (SC-73) PBSS303PZ_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 November 2009 11 of 14

PBSS303PZ NXP Semiconductors 30 V, 5.3 A PNP low V (BISS) transistor CEsat 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS303PZ_2 20091120 Product data sheet - PBSS303PZ_1 Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 16 “Reflow soldering footprint SOT223 (SC-73)”: updated • Figure 17 “Wave soldering footprint SOT223 (SC-73)”: updated PBSS303PZ_1 20060914 Product data sheet - - PBSS303PZ_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 November 2009 12 of 14

PBSS303PZ NXP Semiconductors 30 V, 5.3 A PNP low V (BISS) transistor CEsat 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 13.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications — Applications that are described herein for any of these modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the information included herein and shall have no liability for the consequences of specified use without further testing or modification. use of such information. 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This document supersedes and replaces all information supplied prior to the publication hereof. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this Suitability for use — NXP Semiconductors products are not designed, document, and as such is not complete, exhaustive or legally binding. authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected 13.4 Trademarks to result in personal injury, death or severe property or environmental Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PBSS303PZ_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 November 2009 13 of 14

PBSS303PZ NXP Semiconductors 30 V, 5.3 A PNP low V (BISS) transistor CEsat 15. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14 Contact information. . . . . . . . . . . . . . . . . . . . . 13 15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 November 2009 Document identifier: PBSS303PZ_2