PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor 22 February 2018 Product data sheet 1. General description Low V NPN transistor in a SOT883 leadless ultra small plastic package. CEsat PNP complement: PBSS3540M. 2. Features and benefits • Low collector-emitter saturation voltage V CEsat • High collector current capability I and I C CM • High efficiency leading to reduced heat generation • Reduced printed-circuit board requirements. • AEC-Q101 qualified 3. Applications • Power management: • DC-DC converter • Supply line switching • Battery charger • LCD backlighting. • Peripheral driver: • Driver in low supply voltage applications (e.g. lamps and LEDs). • Inductive load drivers (e.g. relays, buzzers and motors). 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 40 V CEO voltage I collector current [1] [2] - - 500 mA C I peak collector current single pulse; t ≤ 1 ms - - 1 A CM p h DC current gain V = 2 V; I = 10 mA; T = 25 °C 200 - - FE CE C amb R collector-emitter I = 500 mA; I = 50 mA; t ≤ 300 µs; - 380 500 mΩ CEsat C B p saturation resistance pulsed; δ ≤ 0.02 ; T = 25 °C amb [1] Device mounted on an FR4 Printed-Circuit Board, (PCB), single-sided copper, tinplated, standard footprint, with 60 μm copper strip line. [2] Refer to SOT883 standard mounting conditions.

Nexperia PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 1 C 3 2 E emitter 2 B 3 C collector Transparent top view E DFN1006-3 (SOT883) sym123 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS2540M DFN1006-3 DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PBSS2540M DC PBSS2540M All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 22 February 2018 2 / 10

Nexperia PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 40 V CBO V collector-emitter voltage open base - 40 V CEO V emitter-base voltage open collector - 6 V EBO I collector current [1] [2] - 500 mA C I peak collector current single pulse; t ≤ 1 ms - 1 A CM p I peak base current - 100 mA BM P total power dissipation T ≤ 25 °C [1] [2] - 250 mW tot amb [2] [3] - 430 mW T junction temperature - 150 °C j T ambient temperature -65 150 °C amb T storage temperature -65 150 °C stg [1] Device mounted on an FR4 Printed-Circuit Board, (PCB), single-sided copper, tinplated, standard footprint, with 60 μm copper strip line. [2] Refer to SOT883 standard mounting conditions. [3] Device mounted on an FR4 PCB, single-sided copper, tinplated, mounting pad for collector 1 cm2. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance in free air [1] [2] - - 500 K/W th(j-a) from junction to [2] [3] - - 290 K/W ambient [4] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint, with 60 μm copper strip line. [2] Refer to SOT883 standard mounting conditions. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [4] Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms. PBSS2540M All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 22 February 2018 3 / 10

Nexperia PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit I collector-base cut-off V = 30 V; I = 0 A; T = 25 °C - - 100 nA CBO CB E amb current V = 30 V; I = 0 A; T = 150 °C - - 50 µA CB E j I emitter-base cut-off V = 5 V; I = 0 A; T = 25 °C - - 100 nA EBO EB C amb current h DC current gain V = 2 V; I = 10 mA; T = 25 °C 200 - - FE CE C amb V = 2 V; I = 100 mA; t ≤ 300 µs; 150 - - CE C p pulsed; δ ≤ 0.02 ; T = 25 °C amb V = 2 V; I = 500 mA; t ≤ 300 µs; 50 - - CE C p pulsed; δ ≤ 0.02 ; T = 25 °C amb V collector-emitter I = 10 mA; I = 0.5 mA; T = 25 °C - - 50 mV CEsat C B amb saturation voltage I = 100 mA; I = 5 mA; T = 25 °C - - 100 mV C B amb I = 200 mA; I = 10 mA; T = 25 °C - - 200 mV C B amb I = 500 mA; I = 50 mA; t ≤ 300 µs; - - 250 mV C B p pulsed; δ ≤ 0.02 ; T = 25 °C R collector-emitter amb - 380 500 mΩ CEsat saturation resistance V base-emitter saturation - - 1.2 V BEsat voltage V base-emitter turn-on V = 2 V; I = 100 mA; T = 25 °C - - 1.1 V BEon CE C amb voltage f transition frequency V = 5 V; I = 100 mA; f = 100 MHz; 250 450 - MHz T CE C T = 25 °C amb C collector capacitance V = 10 V; I = 0 A; i = 0 A; - - 6 pF c CB E e f = 1 MHz; T = 25 °C amb PBSS2540M All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 22 February 2018 4 / 10

Nexperia PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor mhc082 mhc085 1200 1200 hFE VBE (mV) 1000 1000 (1) 800 800 (1) 600 (2) (2) 600 400 (3) 400 200 (3) 0 200 10-1 1 10 102 103 10-1 1 10 102 103 IC (mA) IC (mA) V = 2 V V = 2 V CE CE (1) T = 150 °C (1) T = -55 °C amb amb (2) T = 25 °C (2) T = 25 °C amb amb (3) T = -55 °C (3) T = 150 °C amb amb Fig. 1. DC current gain as a function of collector Fig. 2. Base-emitter voltage as a function of collector current; typical values current; typical values 103 mhc086 1200 mhc084 VBEsat VCEsat (mV) (mV) 1000 (1) 800 102 (2) (1) 600 (2) 400 (3) (3) 10 200 10-1 1 10 102 103 10-1 1 10 102 103 IC (mA) IC (mA) I /I = 20 I /I = 20 C B C B (1) T = 150 °C (1) T = 150 °C amb amb (2) T = 25 °C (2) T = 25 °C amb amb (3) T = -55 °C (3) T = -55 °C amb amb Fig. 3. Collector-emitter saturation voltage as a Fig. 4. Base-emitter saturation voltage as a function of function of collector current; typical values collector current; typical values PBSS2540M All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 22 February 2018 5 / 10

Nexperia PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor 1200 mhc083 103 mhc087 IC (mA) RCEsat (1) (Ω) 1000 (2) (3) (4) 102 (5) 800 (6) (7) (8) 600 (9) 10 (10) (1) 400 (2) (3) 1 200 0 10-1 0 1 2 3 4 5 10-1 1 10 102 103 VCE (V) IC (mA) T = 25 °C I /I = 20 amb C B (1) I = 25 mA (1) T = 150 °C B amb (2) I = 22.5 mA (2) T = 25 °C B amb (3) I = 20 mA (3) T = -55 °C B amb (4) I = 17.5 mA B Fig. 6. Collector-emitter saturation resistance as a (5) I = 15 mA B function of collector current; typical values (6) I = 12.5 mA B (7) I = 10 mA B (8) I = 7.5 mA B (9) I = 5 mA B (10) I = 2.5 mA B Fig. 5. Collector current as a function of collector- emitter voltage; typical values 11. Package outline 0.62 0.55 0.55 0.50 0.47 0.46 0.30 3 0.22 1.02 0.65 0.95 0.30 0.22 2 1 0.20 0.12 0.35 Dimensions in mm 03-04-03 Fig. 7. Package outline DFN1006-3 (SOT883) PBSS2540M All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 22 February 2018 6 / 10

Nexperia PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor 12. Soldering 1.3 0.7 R0.05 (12×) solder lands solder resist 0.9 0.6 0.7 0.25 solder paste (2×) occupied area 0.3 (2×) 0.3 Dimensions in mm 0.4 0.4 (2×) sot883_fr Fig. 8. Reflow soldering footprint for DFN1006-3 (SOT883) PBSS2540M All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 22 February 2018 7 / 10

Nexperia PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor 13. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change Supersedes notice PBSS2540M v.2 20180222 Product data sheet - PBSS2540M v.1 Modifications: • The format of this data sheet has been redesigned to comply with the identity guidelines of Nexperia. • Legal texts have been adapted to the new company name where appropriate. PBSS2540M v.1 20030722 Product data sheet - - PBSS2540M All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 22 February 2018 8 / 10

Nexperia PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. 14. Legal information Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This Data sheet status document supersedes and replaces all information supplied prior to the publication hereof. Document Product Definition Suitability for use in automotive applications — This Nexperia product status [1][2] status [3] has been qualified for use in automotive applications. 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Nexperia PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor 15. Contents 1. General description......................................................1 2. Features and benefits..................................................1 3. Applications..................................................................1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking..........................................................................2 8. Limiting values.............................................................3 9. Thermal characteristics...............................................3 10. Characteristics............................................................4 11. Package outline..........................................................6 12. Soldering.....................................................................7 13. Revision history..........................................................8 14. Legal information.......................................................9 © Nexperia B.V. 2018. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 22 February 2018 PBSS2540M All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved Product data sheet 22 February 2018 10 / 10