DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR941B UHF wideband transistor Preliminary specification 2001 Jan 18

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B FEATURES PINNING SOT23 • Small size PIN DESCRIPTION • Low noise 1 base • Low distortion 2 emitter • High gain 3 collector • Gold metallization ensures excellent reliability. APPLICATIONS handbook, halfpage 3 • Communication and instrumentation systems. DESCRIPTION 1 2 Silicon NPN transistor in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband Top view MSB003 Marking code: LBp applications in the GHz range in the RF front end of analog and digital cellular telephones, cordless phones, radar Fig.1 Simplified outline (SOT23). detectors, pagers and satellite TV-tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C feedback capacitance I =0; V =6V; f=1MHz − 0.3 − pF re C CB f transition frequency I =15mA; V =6V; f =1GHz 7 9 − GHz T C CE m G maximum unilateral power gain I =15mA; V =6V; − 16 − dB UM C CE T =25°C; f=1GHz amb NF noise figure Γ =Γ ; I =5mA; V =6V; − 1.5 2.5 dB S opt C CE f=1GHz P total power dissipation T =60°C; note1 − − 360 mW tot s R thermal resistance from junction − − 320 K/W thj-s to soldering point Note 1. T is the temperature at the soldering point of the collector pin. s 2001 Jan 18 2

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter − 20 V CBO V collector-emitter voltage open base − 10 V CEO V emitter-base voltage open collector − 1.5 V EBO I collector current (DC) − 50 mA C I average collector current − 50 mA C(AV) P total power dissipation T =60°C; note1 − 360 mW tot s T storage temperature −65 +150 °C stg T junction temperature − 150 °C j Note 1. T is the temperature at the soldering point of the collector pin. s THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R thermal resistance from junction to soldering point 320 K/W th j-s 2001 Jan 18 3

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B CHARACTERISTICS T =25°C unless otherwise specified. j SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DCcharacteristics V collector-base breakdown voltage I =100µA; I =0 20 − − V (BR)CBO C E V collector-emitter breakdown I =100µA; I =0 10 − − V (BR)CEO C B voltage V emitter-base breakdown voltage I =10µA; I =0 1.5 − − V (BR)EBO E C V forward base-emitter voltage I =25mA − − 1.05 V BEF E I collector-base leakage current V =10V; I =0 − − 100 nA CBO CB E I emitter-base leakage current V =1V; I =0 − − 100 nA EBO EB C h DCcurrent gain I =5mA; V =6V 100 150 200 FE C CE I =15mA; V =6V − 150 − C CE ACcharacteristics C feedback capacitance I =0; V =6V; f=1MHz − 0.3 − pF re C CB f transition frequency I =15mA; V =6V; f =1GHz 7 9 − GHz T C CE m |s |2 insertion gain I =15mA; V =6V; f=1GHz 13 15 − dB 21 C CE G maximum unilateral power gain; I =15mA; V =6V; − 16 − dB UM C CE note1 T =25°C; f=1GHz amb I =15mA; V =6V; − 10 − dB C CE T =25°C; f=2GHz amb NF noise figure Γ =Γ ; I =5mA; V =6V; − 1.5 2.5 dB S opt C CE f=1GHz Γ =Γ ; I =5mA; V =6V; − 2.1 − dB S opt C CE f=2GHz Note s 2 1. G is the maximum unilateral power gain, assuming s is zero. G = 10 log---------------------------2--1--------------------------- dB UM 12 UM (1– s 2)(1– s 2) 11 22 2001 Jan 18 4

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B handbook4,0 h0alfpage MDA871 handbook1,6 h0alfpage MCD974 Ptot (mW) hFE 300 120 200 70 100 40 0 0 0 50 100 150 Ts (°C)200 0 10 20 30 40IC (mA)50 VCE=6V. Fig.2 Power derating as a function of soldering Fig.3 DC current gain as a function of collector point temperature. current; typical values. MGS498 MCD975 0.5 10 handbook, halfpage handbook, halfpage Cre fT (pF) (GHz) 0.4 8 0.3 6 0.2 4 0.1 2 0 0 0 4 8 12 0 10 20 30 40 50 VCB (V) IC (mA) IC=Ic=0; f=1MHz. VCE=6V; fm=1GHz; Tamb=25°C. Fig.4 Feedback capacitance as a function of Fig.5 Transition frequency as a function of collector-base voltage; typical values. collector current; typical values. 2001 Jan 18 5

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B MGS500 MGS501 20 50 handbook, halfpage handbook, halfpage gain MSG gain (dB) Gmax (dB) 16 GUM 40 GUM 12 30 MSG 8 20 Gmax 4 10 0 0 0 10 20 30 40 102 103 f (MHz) 104 IC (mA) f=1GHz; VCE=6V. IC=5mA; VCE=6V. GUM=maximum unilateral power gain. GUM=maximum unilateral power gain. MSG=maximum stable gain. MSG=maximum stable gain. Gmax=maximum available gain. Gmax=maximum available gain. Fig.6 Gain as a function of collector current; Fig.7 Gain as a function of frequency; typical typical values. values. MGR502 MGS503 50 50 handbook, halfpage handbook, halfpage gain gain (dB) (dB) 40 40 GUM 30 30 MSG MSG GUM 20 20 Gmax Gmax 10 10 0 0 102 103 f (MHz) 104 102 103 f (MHz) 104 IC=15mA; VCE=6V. IC=30 mA; VCE=6V. GUM=maximum unilateral power gain. GUM=maximum unilateral power gain. MSG=maximum stable gain. MSG=maximum stable gain. Gmax=maximum available gain. Gmax=maximum available gain. Fig.8 Gain as a function of frequency; typical Fig.9 Gain as a function of frequency; typical values. values. 2001 Jan 18 6

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B MGS504 MGS505 4 4 handbook, halfpage handbook, halfpage NF NF (dB) (dB) (1) 3 3 (2) (1) 2 (2) 2 (3) (3) (4) (5) (6) 1 1 0 0 10−1 1 10 IC (mA) 102 102 103 f (MHz) 104 VCE=6V. VCE=6V. (1) f=2GHz. (4) f=900MHz. (1) IC=30mA. (2) f=1.5GHz. (5) f=800MHz. (2) IC=15mA. (3) f=1GHz. (6) f=500MHz. (3) IC=5mA. Fig.10 Minimum noise figure as a function of Fig.11 Minimum noise figure as a function of collector current; typical values. frequency; typical values. 2001 Jan 18 7

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B handbook, full pagewidth unstable region unstable source 90° region load 1.0 +1 135° +0.5 +2 45° 0.8 0.6 0.4 +0.2 +5 Γopt 0.2 (1) 180° 0 0.5 1 2 (4) 5 0° 0 (2) (3) (5) f=1GHz; VCE=6V; −0.2 (6) −5 IC=5mA; Zo=50Ω. (1) G=17dB. (2) G=16dB. ((34)) GNF==151.d6Bd.B. −135° −0.5 −2 −45° (5) NF=1.8dB. −1 (6) NF=2dB. 1.0 −90° MGS506 Fig.12 Common emitter available gain, noise and stability circles; typical values. handbook, full pagewidth unstable 90° region load unstable region 1.0 +1 source 135° +0.5 +2 45° 0.8 0.6 0.4 +0.2 +5 Γopt 0.2 (1) 180° 0 0.5 1 2 5 0° 0 0.2 (5) (6) (2) (7) f=2GHz; VCE=6V; IC=5mA; −0.2 −5 Zo=50Ω. (3) (1) Gmax=10.9dB. (4) (2) G=10dB. ((34)) GG==98ddBB.. −135° −0.5 −2 −45° (5) NF=2.1dB. −1 (6) NF=2.3dB. 1.0 (7) NF=2.5dB. −90° MGS507 Fig.13 Common emitter available gain, noise and stability circles; typical values. 2001 Jan 18 8

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B handbook, full pagewidth 90° 1.0 +1 135° +0.5 +2 45° 0.8 0.6 0.4 +0.2 +5 0.2 3 GHz 180° 0 0.2 0.5 2 G1Hz 2 5 0° 0 1 GHz −0.2 500 MHz 100 MHz −5 200 MHz −135° −0.5 −2 −45° −1 1.0 −90° MGS508 VCE=6V; IC=15mA; Zo=50Ω. Fig.14 Common emitter input reflection coefficient (s ); typical values. 11 handbook, full pagewidth 90° 135° 45° 200 MHz 500 MHz 100 MHz 1 GHz 2 GHz 180° 3 GHz 0° 50 40 30 20 10 −135° −45° −90° MGS509 VCE=6V; IC=15mA. Fig.15 Common emitter forward transmission coefficient (s ); typical values. 21 2001 Jan 18 9

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B handbook, full pagewidth 90° 135° 45° 3 GHz 2 GHz 1 GHz 500 MHz 180° 200 MHz 0° 0.5 0.4 0.3 0.2 0.1 100 MHz −135° −45° −90° MGS510 VCE=6V; IC=15mA. Fig.16 Common emitter reverse transmission coefficient (s ); typical values. 12 handbook, full pagewidth 90° 1.0 +1 135° +0.5 +2 45° 0.8 0.6 0.4 +0.2 +5 0.2 180° 0 0.2 0.5 1 2 5 0° 0 1 GHz 500 MHz 2 GHz 100 MHz −0.2 3 GHz 200 MHz−5 −135° −0.5 −2 −45° −1 1.0 −90° MGS511 VCE=6V; IC=15mA; Zo=50Ω. Fig.17 Common emitter output reflection coefficient (s ); typical values. 22 2001 Jan 18 10

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D B E A X HE v M A 3 Q A A1 1 2 c e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x. bp c D E e e1 HE Lp Q v w 1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55 mm 0.1 1.9 0.95 0.2 0.1 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION 97-02-28 SOT23 TO-236AB 99-09-13 2001 Jan 18 11

Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B DATA SHEET STATUS PRODUCT DATA SHEET STATUS DEFINITIONS(1) STATUS Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form Life support applications  These products are not specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or same type number and title. For detailed information see systems where malfunction of these products can the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products Limiting values definition  Limiting values given are in for use in such applications do so at their own risk and accordance with the Absolute Maximum Rating System agree to fully indemnify Philips Semiconductors for any (IEC60134). Stress above one or more of the limiting damages resulting from such application. values may cause permanent damage to the device. These are stress ratings only and operation of the device Right to make changes  Philips Semiconductors at these or at any other conditions above those given in the reserves the right to make changes, without notice, in the Characteristics sections of the specification is not implied. products, including circuits, standard cells, and/or Exposure to limiting values for extended periods may software, described or contained herein in order to affect device reliability. improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for Application information  Applications that are the use of any of these products, conveys no licence or title described herein for any of these products are for under any patent, copyright, or mask work right to these illustrative purposes only. Philips Semiconductors make products, and makes no representations or warranties that no representation or warranty that such applications will be these products are free from patent, copyright, or mask suitable for the specified use without further testing or work right infringement, unless otherwise specified. modification. 2001 Jan 18 12

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