Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

PBLS4004Y; PBLS4004V 40 V PNP BISS loadswitch Rev. 03 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal(BISS) transistor and NPNResistor- CEsat Equipped Transistor(RET) in one package. Table 1. Product overview Type number Package NXP JEITA PBLS4004Y SOT363 SC-88 PBLS4004V SOT666 - 1.2 Features n Low V (BISS) and resistor-equipped transistor in one package CEsat n Low threshold voltage (<1V) compared to MOSFET n Low drive power required n Space-saving solution n Reduction of component count 1.3 Applications n Supply line switches n Battery charger switches n High-side switches for LEDs, drivers and backlights n Portable equipment 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1; PNP low V transistor CEsat V collector-emitter voltage open base - - - 40 V CEO I collector current - - - 500 mA C R collector-emitter saturation I =- 500mA; [1] - 440 700 mW CEsat C resistance I =- 50mA B TR2; NPN resistor-equipped transistor V collector-emitter voltage open base - - 50 V CEO

PBLS4004Y; PBLS4004V NXP Semiconductors 40 V PNP BISS loadswitch Table 2. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit I output current - - 100 mA O R1 bias resistor1 (input) 15.4 22 28.6 kW R2/R1 bias resistor ratio 0.8 1 1.2 [1] Pulse test: t £ 300m s;d£ 0.02. p 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 output (collector) TR2 4 GND (emitter) TR2 R1 R2 5 input (base) TR2 TR2 1 2 3 TR1 6 collector TR1 001aab555 1 2 3 sym036 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PBLS4004Y SC-88 plastic surface-mounted package; 6leads SOT363 PBLS4004V - plastic surface-mounted package; 6leads SOT666 4. Marking Table 5. Marking codes Type number Marking code[1] PBLS4004Y S4* PBLS4004V K4 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBLS4004Y_PBLS4004V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 16 February 2009 2 of 11

PBLS4004Y; PBLS4004V NXP Semiconductors 40 V PNP BISS loadswitch 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1; PNP low V transistor CEsat V collector-base voltage open emitter - - 40 V CBO V collector-emitter voltage open base - - 40 V CEO V emitter-base voltage open collector - - 6 V EBO I collector current - - 500 mA C I peak collector current single pulse; t £ 1ms - - 1 A CM p I base current - - 50 mA B I peak base current single pulse; t £ 1ms - - 100 mA BM p P total power dissipation T £ 25(cid:176) C [1] - 200 mW tot amb TR2; NPN resistor-equipped transistor V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 10 V EBO V input voltage I positive - +40 V negative - - 10 V I output current - 100 mA O I peak collector current single pulse; t £ 1ms - 100 mA CM p P total power dissipation T £ 25(cid:176) C [1] - 200 mW tot amb Per device P total power dissipation - 300 mW tot T junction temperature - 150 (cid:176) C j T ambient temperature - 65 +150 (cid:176) C amb T storage temperature - 65 +150 (cid:176) C stg [1] Device mounted on an FR4Printed-Circuit Board(PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device R thermal resistance from in free air th(j-a) junction to ambient SOT363 [1] - - 416 K/W SOT666 [1][2] - - 416 K/W [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. PBLS4004Y_PBLS4004V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 16 February 2009 3 of 11

PBLS4004Y; PBLS4004V NXP Semiconductors 40 V PNP BISS loadswitch 7. Characteristics Table 8. Characteristics T =25(cid:176) C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit TR1; PNP low V transistor CEsat I collector-base cut-off V =- 40V; I =0A - - - 100 nA CBO CB E current V =- 40V; I =0A; - - - 50 m A CB E T =150(cid:176) C j I emitter-base cut-off V =- 5V; I =0A - - - 100 nA EBO EB C current h DCcurrent gain V =- 2V; I =- 10mA 200 - - FE CE C V =- 2V; I =- 100mA [1] 150 - - CE C V =- 2V; I =- 500mA [1] 40 - - CE C V collector-emitter I =- 10mA; I =- 0.5mA - - - 50 mV CEsat C B saturation voltage I =- 100mA; I =- 5mA - - - 130 mV C B I =- 200mA; I =- 10mA - - - 200 mV C B I =- 500mA; I =- 50mA [1] - - - 350 mV C B R collector-emitter I =- 500mA; I =- 50mA [1] - 440 700 mW CEsat C B saturation resistance V base-emitter I =- 500mA; I =- 50mA [1] - - - 1.2 V BEsat C B saturation voltage V base-emitter V =- 2V; I =- 100mA [1] - - - 1.1 V BEon CE C turn-onvoltage f transition frequency I =- 100mA; V =- 5V; 100 300 - MHz T C CE f=100MHz C collector capacitance V =- 10V; I =i =0A; - - 10 pF c CB E e f=1MHz TR2; NPN resistor-equipped transistor I collector-base cut-off V =50V; I =0A - - 100 nA CBO CB E current I collector-emitter V =30V; I =0A - - 1 m A CEO CE B cut-off current V =30V; I =0A; - - 50 m A CE B T =150(cid:176) C j I emitter-base cut-off V =5V; I =0A - - 180 m A EBO EB C current h DCcurrent gain V =5V; I =5mA 60 - - FE CE C V collector-emitter I =10mA; I =0.5mA - - 150 mV CEsat C B saturation voltage V off-state input voltage V =5V; I =100m A - 1.1 0.8 V I(off) CE C V on-state input voltage V =0.3V; I =5mA 2.5 1.7 - V I(on) CE C R1 bias resistor1 (input) 15.4 22 28.6 kW R2/R1 bias resistor ratio 0.8 1 1.2 C collector capacitance V =10V; I =i =0A; - - 2.5 pF c CB E e f=1MHz [1] Pulse test: t £ 300m s;d£ 0.02. p PBLS4004Y_PBLS4004V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 16 February 2009 4 of 11

PBLS4004Y; PBLS4004V NXP Semiconductors 40 V PNP BISS loadswitch 600 006aaa388 - 1 006aaa394 IB (mA) = - 30 (1) IC - 27 hFE (A) - 24 - 0.8 - 21 - 18 - 15 400 (2) - 12 - 0.6 - 9 - 6 - 3 - 0.4 (3) 200 - 0.2 0 0 - 10- 1 - 1 - 10 - 102 - 103 0 - 1 - 2 - 3 - 4 - 5 IC (mA) VCE (V) V =- 2V T =25(cid:176) C CE amb (1) T =100(cid:176) C amb (2) T =25(cid:176) C amb (3) T =- 55(cid:176) C amb Fig 1. TR1(PNP): DC current gain as a function of Fig 2. TR1(PNP): Collector current as a function of collector current; typical values collector-emitter voltage; typical values - 1.1 006aaa389 - 1.1 006aaa392 VBE VBEsat (V) (V) - 0.9 - 0.9 (1) (1) (2) - 0.7 (2) - 0.7 (3) (3) - 0.5 - 0.5 - 0.3 - 0.3 - 0.1 - 0.1 - 10- 1 - 1 - 10 - 102 - 103 - 10- 1 - 1 - 10 - 102 - 103 IC (mA) IC (mA) V =- 2V I /I =20 CE C B (1) T =- 55(cid:176) C (1) T =- 55(cid:176) C amb amb (2) T =25(cid:176) C (2) T =25(cid:176) C amb amb (3) T =100(cid:176) C (3) T =100(cid:176) C amb amb Fig 3. TR1(PNP): Base-emitter voltage as a function Fig 4. TR1(PNP): Base-emitter saturation voltage as of collector current; typical values a function of collector current; typical values PBLS4004Y_PBLS4004V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 16 February 2009 5 of 11

PBLS4004Y; PBLS4004V NXP Semiconductors 40 V PNP BISS loadswitch - 1 006aaa390 - 1 006aaa391 VCEsat VCEsat (V) (V) - 10- 1 - 10- 1 (1) (1) (2) (2) (3) (3) - 10- 2 - 10- 2 - 10- 1 - 1 - 10 - 102 - 103 - 10- 1 - 1 - 10 - 102 - 103 IC (mA) IC (mA) I /I =20 T =25(cid:176) C C B amb (1) T =100(cid:176) C (1) I /I =100 amb C B (2) T =25(cid:176) C (2) I /I =50 amb C B (3) T =- 55(cid:176) C (3) I /I =10 amb C B Fig 5. TR1(PNP): Collector-emitter saturation Fig 6. TR1(PNP): Collector-emitter saturation voltage as a function of collector current; voltage as a function of collector current; typical values typical values 103 006aaa393 103 006aaa395 RCEsat RCEsat (W ) (W ) 102 102 10 10 (1) (2) (1) (3) (2) 1 1 (3) 10- 1 10- 1 - 10- 1 - 1 - 10 - 102 - 103 - 10- 1 - 1 - 10 - 102 - 103 IC (mA) IC (mA) I /I =20 T =25(cid:176) C C B amb (1) T =100(cid:176) C (1) I /I =100 amb C B (2) T =25(cid:176) C (2) I /I =50 amb C B (3) T =- 55(cid:176) C (3) I /I =10 amb C B Fig 7. TR1(PNP): Collector-emitter saturation Fig 8. TR1(PNP): Collector-emitter saturation resistance as a function of collector current; resistance as a function of collector current; typical values typical values PBLS4004Y_PBLS4004V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 16 February 2009 6 of 11

PBLS4004Y; PBLS4004V NXP Semiconductors 40 V PNP BISS loadswitch 103 006aaa038 10- 1 006aaa039 hFE (1) (1) (2) VC(VE)sat (2) (3) 102 (3) 10 1 10- 2 10- 1 1 10 102 1 10 102 IC (mA) IC (mA) V =5V I /I =20 CE C B (1) T =150(cid:176) C (1) T =100(cid:176) C amb amb (2) T =25(cid:176) C (2) T =25(cid:176) C amb amb (3) T =- 40(cid:176) C (3) T =- 40(cid:176) C amb amb Fig 9. TR2(NPN): DCcurrent gain as a function of Fig 10. TR2(NPN): Collector-emitter saturation collector current; typical values voltage as a function of collector current; typical values 006aaa040 006aaa041 10 10 VI(on) VI(off) (V) (V) (1) (2) (1) 1 (3) 1 (2) (3) 10- 1 10- 1 10- 1 1 10 102 10- 2 10- 1 1 101 IC (mA) IC (mA) V =0.3V V =5V CE CE (1) T =- 40(cid:176) C (1) T =- 40(cid:176) C amb amb (2) T =25(cid:176) C (2) T =25(cid:176) C amb amb (3) T =100(cid:176) C (3) T =100(cid:176) C amb amb Fig 11. TR2(NPN): On-state input voltage as a Fig 12. TR2(NPN): Off-state input voltage as a function of collector current; typical values function of collector current; typical values PBLS4004Y_PBLS4004V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 16 February 2009 7 of 11

PBLS4004Y; PBLS4004V NXP Semiconductors 40 V PNP BISS loadswitch 8. Package outline 2.2 1.1 1.7 0.6 1.8 0.8 1.5 0.5 6 5 4 0.45 6 5 4 0.15 0.3 0.1 2.2 1.35 1.7 1.3 2.0 1.15 pin 1 1.5 1.1 index pin 1 index 1 2 3 1 2 3 0.65 00..32 00..2150 0.5 00..2177 00..1088 1.3 1 Dimensions in mm 06-03-16 Dimensions in mm 04-11-08 Fig 13. Package outline SOT363(SC-88) Fig 14. Package outline SOT666 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 4000 8000 10000 PBLS4004Y SOT363 4mm pitch, 8mm tape and reel; T1 [2] -115 - - -135 4mm pitch, 8mm tape and reel; T2 [3] -125 - - -165 PBLS4004V SOT666 2mm pitch, 8mm tape and reel - - -315 - 4mm pitch, 8mm tape and reel - -115 - - [1] For further information and the availability of packing methods, seeSection12. [2] T1: normal taping [3] T2: reverse taping PBLS4004Y_PBLS4004V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 16 February 2009 8 of 11

PBLS4004Y; PBLS4004V NXP Semiconductors 40 V PNP BISS loadswitch 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PBLS4004Y_PBLS4004V_3 20090216 Product data sheet - PBLS4004Y_PBLS4004V_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Figure5: y-axis value unit amended • Figure6: y-axis value unit amended • Section 11 “Legal information”: updated PBLS4004Y_PBLS4004V_2 20050711 Product data sheet - PBLS4004Y_PBLS4004V_1 PBLS4004Y_PBLS4004V_1 20041213 Product data sheet - - PBLS4004Y_PBLS4004V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 16 February 2009 9 of 11

PBLS4004Y; PBLS4004V NXP Semiconductors 40 V PNP BISS loadswitch 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. 11.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications —Applications that are described herein for any of these modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the informationincludedhereinandshallhavenoliabilityfortheconsequencesof specified use without further testing or modification. use of such information. Limiting values —Stress above one or more limiting values (as defined in Short data sheet —A short data sheet is an extract from a full data sheet theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand the device at these or any other conditions above those given in the full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability. office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale —NXP Semiconductors products are sold full data sheet shall prevail. subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, 11.3 Disclaimers intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such General —Information in this document is believed to be accurate and terms and conditions, the latter will prevail. reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor No offer to sell or license —Nothing in this document may be interpreted warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch or construed as an offer to sell products that is open for acceptance or the information and shall have no liability for the consequences of use of such grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents information. or other industrial or intellectual property rights. Right to make changes —NXPSemiconductorsreservestherighttomake Quick reference data —The Quick reference data is an extract of the changes to information published in this document, including without product data given in the Limiting values and Characteristics sections of this limitation specifications and product descriptions, at any time and without document, and as such is not complete, exhaustive or legally binding. notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, 11.4 Trademarks authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or Notice:Allreferencedbrands,productnames,servicenamesandtrademarks malfunction of an NXP Semiconductors product can reasonably be expected are the property of their respective owners. to result in personal injury, death or severe property or environmental 12. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com PBLS4004Y_PBLS4004V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 16 February 2009 10 of 11

PBLS4004Y; PBLS4004V NXP Semiconductors 40 V PNP BISS loadswitch 13. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 Contact information. . . . . . . . . . . . . . . . . . . . . 10 13 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 16 February 2009 Document identifier: PBLS4004Y_PBLS4004V_3