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PBHV8118T 180 V, 1 A NPN high-voltage low V (BISS) transistor CEsat Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low V Breakthrough In Small Signal (BISS) transistor in a small CEsat SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits (cid:132) High voltage (cid:132) Low collector-emitter saturation voltage V CEsat (cid:132) High collector current capability I and I C CM (cid:132) High collector current gain (h ) at high I FE C (cid:132) AEC-Q101 qualified (cid:132) Small SMD plastic package 1.3 Applications (cid:132) LED driver for LED chain module (cid:132) LCD backlighting (cid:132) Automotive power management (cid:132) Hook switch for wired telecom (cid:132) Switch Mode Power Supply(SMPS) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 180 V CEO I collector current - - 1 A C h DCcurrent gain V =10V; [1] 100 250 - FE CE I =50mA C [1] Pulse test: tp≤300μs; δ≤0.02.

PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 3 3 2 emitter 3 collector 1 1 2 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBHV8118T - plastic surface-mounted package; 3leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PBHV8118T LZ* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBHV8118T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 7 May 2010 2 of 13

PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 400 V CBO V collector-emitter voltage open base - 180 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 1 A C I peak collector current single pulse; - 2 A CM t ≤1ms p I peak base current single pulse; - 400 mA BM t ≤1ms p P total power dissipation T ≤25°C [1] - 300 mW tot amb T junction temperature - 150 °C j T ambient temperature −55 +150 °C amb T storage temperature −65 +150 °C stg [1] Device mounted on an FR4Printed-Circuit Board(PCB), single-sided copper, tin-plated and standard footprint. 006aab150 400 Ptot (mW) 300 200 100 0 −75 −25 25 75 125 175 Tamb (°C) FR4PCB, standard footprint Fig 1. Power derating curve PBHV8118T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 7 May 2010 3 of 13

PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air [1] - - 417 K/W th(j-a) junction to ambient R thermal resistance from - - 70 K/W th(j-sp) junction to solder point [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. 103 006aab151 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 10 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV8118T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 7 May 2010 4 of 13

PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 7. Characteristics Table 7. Characteristics T =25°C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit I collector-base cut-off V =144V; I =0A - - 100 nA CBO CB E current V =144V; I =0A; - - 10 μA CB E T =150°C j I collector-emitter cut-off V =144V; V =0V - - 100 nA CES CE BE current I emitter-base cut-off V =4V; I =0A - - 100 nA EBO EB C current h DCcurrent gain V =10V [1] FE CE I =50mA 100 250 - C I =100mA 100 250 - C I =0.5A 50 100 - C V collector-emitter I =100mA; I =10mA [1] - 40 60 mV CEsat C B saturation voltage I =100mA; I =20mA [1] - 33 50 mV C B V base-emitter saturation I =0.5A; I =100mA [1] - 1 1.2 V BEsat C B voltage t delay time V =6V; I =0.5A; - 7 - ns d CC C I =0.1A; I =−0.1A t rise time Bon Boff - 565 - ns r t turn-on time - 572 - ns on t storage time - 1320 - ns s t fall time - 740 - ns f t turn-off time - 2060 - ns off f transition frequency V =10V; I =10mA; - 30 - MHz T CE C f=100MHz C collector capacitance V =20V; I =i =0A; - 5.7 - pF c CB E e f=1MHz C emitter capacitance V =0.5V; I =i =0A; - 150 - pF e EB C c f=1MHz [1] Pulse test: tp≤300μs; δ≤0.02. PBHV8118T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 7 May 2010 5 of 13

PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 006aac366 006aac367 500 2.0 IB (mA) = 320 hFE IC 288 (A) 256 400 224 192 1.5 (1) 160 128 300 96 (2) 1.0 64 200 (3) 32 0.5 100 0 0.0 10−1 1 10 102 103 104 0.0 1.0 2.0 3.0 4.0 5.0 IC (mA) VCE (V) VCE=10V Tamb=25°C (1) Tamb=100°C (2) Tamb=25°C (3) Tamb=−55°C Fig 3. DCcurrent gain as a function of collector Fig 4. Collector current as a function of current; typical values collector-emitter voltage; typical values 006aac368 006aac369 1.2 1.3 VBE VBEsat (V) (V) (1) 0.8 0.9 (1) (2) (2) (3) (3) 0.4 0.5 0 0.1 10−1 1 10 102 103 104 10−1 1 10 102 103 104 IC (mA) IC (mA) V =10V I /I =5 CE C B (1) Tamb=−55°C (1) Tamb=−55°C (2) Tamb=25°C (2) Tamb=25°C (3) Tamb=100°C (3) Tamb=100°C Fig 5. Base-emitter voltage as a function of collector Fig 6. Base-emitter saturation voltage as a function current; typical values of collector current; typical values PBHV8118T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 7 May 2010 6 of 13

PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 006aac370 006aac371 1 10 VCEsat VCEsat (V) (V) 1 10−1 (1) 10−1 (2) (1) (2) 10−2 (3) (3) 10−2 10−3 10−3 10−1 1 10 102 103 104 10−1 1 10 102 103 104 IC (mA) IC (mA) IC/IB=5 Tamb=25°C (1) Tamb=100°C (1) IC/IB=20 (2) Tamb=25°C (2) IC/IB=10 (3) Tamb=−55°C (3) IC/IB=5 Fig 7. Collector-emitter saturation voltage as a Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values function of collector current; typical values 103 006aac372 103 006aac373 RCEsat RCEsat (Ω) (Ω) 102 102 10 10 (1) (2) 1 1 (1) (2) (3) (3) 10−1 10−1 10−1 1 10 102 103 104 10−1 1 10 102 103 104 IC (mA) IC (mA) IC/IB=5 Tamb=25°C (1) Tamb=100°C (1) IC/IB=20 (2) Tamb=25°C (2) IC/IB=10 (3) Tamb=−55°C (3) IC/IB=5 Fig 9. Collector-emitter saturation resistance as a Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values function of collector current; typical values PBHV8118T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 7 May 2010 7 of 13

PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 8. Test information VBB VCC RB RC (probe) Vo (probe) oscilloscope oscilloscope 450 Ω 450 Ω R2 VI DUT R1 mlb826 Fig 11. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 3.0 1.1 2.8 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 0.48 0.15 0.38 0.09 1.9 Dimensions in mm 04-11-04 Fig 12. Package outline SOT23(TO-236AB) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 PBHV8118T SOT23 4mm pitch, 8mm tape and reel -215 -235 [1] For further information and the availability of packing methods, see Section14. PBHV8118T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 7 May 2010 8 of 13

PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 1.7 2 solder paste 0.7 0.6 occupied area (3×) (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 13. Reflow soldering footprint SOT23(TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 14. Wave soldering footprint SOT23(TO-236AB) PBHV8118T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 7 May 2010 9 of 13

PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBHV8118T v.1 20100507 Product data sheet - - PBHV8118T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 7 May 2010 10 of 13

PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 13.2 Definitions malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of Draft — The document is a draft version only. The content is still under NXP Semiconductors products in such equipment or applications and internal review and subject to formal approval, which may result in therefore such inclusion and/or use is at the customer’s own risk. modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of Applications — Applications that are described herein for any of these information included herein and shall have no liability for the consequences of products are for illustrative purposes only. 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However, NXP Semiconductors does not give any the Absolute Maximum Ratings System of IEC60134) will cause permanent representations or warranties, expressed or implied, as to the accuracy or damage to the device. Limiting values are stress ratings only and (proper) completeness of such information and shall have no liability for the operation of the device at these or any other conditions above those given in consequences of use of such information. the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. 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This document supersedes and replaces all information supplied prior conveyance or implication of any license under any copyrights, patents or to the publication hereof. other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, Export control — This document as well as the item(s) described herein authorized or warranted to be suitable for use in life support, life-critical or may be subject to export control regulations. Export might require a prior safety-critical systems or equipment, nor in applications where failure or authorization from national authorities. PBHV8118T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 7 May 2010 11 of 13

PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low V (BISS) transistor CEsat Quick reference data — The Quick reference data is an extract of the 13.4 Trademarks product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PBHV8118T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 7 May 2010 12 of 13

PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low V (BISS) transistor CEsat 15. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . 8 10 Packing information . . . . . . . . . . . . . . . . . . . . . 8 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 14 Contact information. . . . . . . . . . . . . . . . . . . . . 12 15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 7 May 2010 Document identifier: PBHV8118T