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P6SMB12CAT3G产品简介:
ICGOO电子元器件商城为您提供P6SMB12CAT3G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 P6SMB12CAT3G价格参考¥询价-¥询价。ON SemiconductorP6SMB12CAT3G封装/规格:TVS - 二极管, 。您可以下载P6SMB12CAT3G参考资料、Datasheet数据手册功能说明书,资料中有P6SMB12CAT3G 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TVS DIODE 10.2VWM 16.7VC SMBTVS 二极管 - 瞬态电压抑制器 12V 600W Bidirectional |
产品分类 | |
品牌 | ON Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,TVS二极管,TVS 二极管 - 瞬态电压抑制器,ON Semiconductor P6SMB12CAT3G- |
数据手册 | |
产品型号 | P6SMB12CAT3G |
不同频率时的电容 | 800pF @ 1MHz |
产品目录页面 | |
产品种类 | TVS 二极管 - 瞬态电压抑制器 |
供应商器件封装 | SMB |
其它名称 | P6SMB12CAT3GOSDKR |
击穿电压 | 11.4 V |
功率-峰值脉冲 | 600W |
包装 | Digi-Reel® |
单向通道 | - |
双向通道 | 1 |
商标 | ON Semiconductor |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | DO-214AA,SMB |
封装/箱体 | DO-214AA |
尺寸 | 3.81(Max) mm W x 4.57 mm L |
峰值浪涌电流 | 36 A |
峰值脉冲功率耗散 | 600 W |
工作温度 | -65°C ~ 150°C |
工作电压 | 10.2 V |
工厂包装数量 | 2500 |
应用 | 通用 |
最大工作温度 | + 150 C |
最小工作温度 | - 65 C |
极性 | Bidirectional |
标准包装 | 1 |
电压-击穿(最小值) | 11.4V |
电压-反向关态(典型值) | 10.2V |
电压-箝位(最大值)@Ipp | 16.7V |
电流-峰值脉冲(10/1000µs) | 36A (8/20µs) |
电源线路保护 | 无 |
端接类型 | SMD/SMT |
类型 | 齐纳 |
系列 | P6SMB11CAT3G |
钳位电压 | 16.7 V |
TVS Diodes Surface Mount > 600W > P6SMB11AT3G Series P6SMB11AT3G Series Pb Description The P6SMB11AT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The P6SMB11AT3G series is supplied in the Littelfuse exclusive, cost-effective, highly reliable package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Features • Working Peak Reverse Voltage Range − 9.4 to 77.8 V Maximum Ratings and Thermal Characteristics • Standard Zener Breakdown Voltage Range − 11 to 91 V Parameter Symbol Value Unit • Peak Power − 600 W @ 1 ms Peak Power Dissipation (Note 1) @ T = • ESD Rating of Class 3 (> 16 kV) per Human Body Model L P 600 W 25°C, Pulse Width = 1 ms PK • Maximum Clamp Voltage @ Peak Pulse Current DMCe aPsouwreedr DZeisrsoi pLaetaiodn L @en TgLt h= ( N75o°tCe 2) PD 3.0 W • Low Leakage < 5 µA Above 10 V Derate Above 75°C 40 mW/°C • UL 497B for Isolated Loop Circuit Protection Thermal Resistance from Junction−to− Lead R JL 25 °C/W • Response Time is Typically < 1 ns • These are Pb−Free Devices DC Power Dissipation (Note 3) @ TA = 0.55 W PD 25°C Derate Above 25°C 4.4 mW/°C Thermal Resistance from Junction–to– R 226 °C/W Functional Diagram Ambient 0JA Operating and Storage Temperature -65 to T T °C Range J, stg +150 Bi-directional Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may Additional Information occur and reliability may be affected. 1. 10 X 1000 µs, non−repetitive. 2. 1” square copper pad, FR−4 board. 3. FR−4 board, using Littelfuse minimum recommended footprint, as shown in 403A-03 case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per Datasheet Resources Samples minute maximum. Cathode Anode *Please see P6SMB6.8AT3 to P6SMB200AT3 for Unidirectional devices. Uni-directional © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17
TVS Diodes Surface Mount > 600W > P6SMB11AT3G Series I-V Curve Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter IPP IPP Maximum Reverse Peak Pulse Current V Clamping Voltage @ I C PP IT VRWM Working Peak Reverse Voltage VC VBR VRWM IR I Maximum Reverse Leakage Current @ V IR VRWM VBR VC R RWM IT V Breakdown Voltage @ I BR T I Test Current T IPP eV Maximum Temperature Coefficient of V BR BR © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17
TVS Diodes Surface Mount > 600W > P6SMB11AT3G Series Electrical Characteristics (Devices listed in bold, italic are Littelfuse Preferred devices) V @ I V I @ Breakdown Voltage C PP Device* Device (NRoWteM 6) VR (Note 6) VBR (NCo tTeyp 7.) Marking RWM V @ I (V) (Note 5) @ I V I BR T T C PP Volts µA MIN NOM MAX mA Volts Amps %/°C pF P6SMB11CAT3G 11C 9.4 5 10.5 11.05 11.6 1 15.6 38 0.075 865 P6SMB12CAT3G 12C 10.2 5 11.4 12 12.6 1 16.7 36 0.078 800 P6SMB15CAT3G 15C 12.8 5 14.3 15.05 15.8 1 21.2 28 0.084 645 P6SMB16CAT3G 16C 13.6 5 15.2 16 16.8 1 22.5 27 0.086 610 P6SMB18CAT3G 18C 15.3 5 17.1 18 18.9 1 25.2 24 0.088 545 P6SMB20CAT3G 20C 17.1 5 19 20 21 1 27.7 22 0.09 490 P6SMB22CAT3G 22C 18.8 5 20.9 22 23.1 1 30.6 20 0.09 450 P6SMB24CAT3G 24C 20.5 5 22.8 24 25.2 1 33.2 18 0.094 415 P6SMB27CAT3G 27C 23.1 5 25.7 27.05 28.4 1 37.5 16 0.096 370 P6SMB30CAT3G 30C 25.6 5 28.5 30 31.5 1 41.4 14.4 0.097 335 P6SMB33CAT3G 33C 28.2 5 31.4 33.05 34.7 1 45.7 13.2 0.098 305 P6SMB36CAT3G 36C 30.8 5 34.2 36 37.8 1 49.9 12 0.099 280 P6SMB39CAT3G 39C 33.3 5 37.1 39.05 41 1 53.9 11.2 0.1 260 P6SMB43CAT3G 43C 36.8 5 40.9 43.05 45.2 1 59.3 10.1 0.101 240 P6SMB47CAT3G 47C 40.2 5 44.7 47.05 49.4 1 64.8 9.3 0.101 220 P6SMB51CAT3G 51C 43.6 5 48.5 51.05 53.6 1 70.1 8.6 0.102 205 P6SMB56CAT3G 56C 47.8 5 53.2 56 58.8 1 77 7.8 0.103 185 P6SMB62CAT3G 62C 53 5 58.9 62 65.1 1 85 7.1 0.104 170 P6SMB68CAT3G 68C 58.1 5 64.6 68 71.4 1 92 6.5 0.104 155 P6SMB82CAT3G 82C 70.1 5 77.9 82 86.1 1 113 5.3 0.105 130 4. A transient suppressor is normally selected according to the working peak reverse voltage (V ), which should be equal to or greater than the DC or RWM continuous peak operating voltage level. 5. V measured at pulse test current I at an ambient temperature of 25°C. BR T 6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data − 600 Watt at the beginning of this group. 7. Bias Voltage = 0 V, F = 1 MHz, T = 25°C J © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17
TVS Diodes Surface Mount > 600W > P6SMB11AT3G Series Ratings and Characteristic Curves Figure 1. Pulse Rating Curve Figure 2. Pulse Waveform 100 NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 2 10 1 0.1 0.1 s1 s1 0 s 100 s 1 ms 10 ms t Figure 3 - Pulse Derating Curve Figure 4. Typical Junction Capacitance vs. Bias Voltage Figure 5. Typical Protection Circuit in in © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17
TVS Diodes Surface Mount > 600W > P6SMB11AT3G Series Dimensions Soldering Footrpint HE 2.261 E bD D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) A A1 L c Inches Millimeters ORDERING INFORMATION Dim Min Nom Max Min Nom Max Device Package Shipping A 0.077 0.091 0.097 1.95 2.30 2.47 A1 0.002 0.004 0.008 0.05 0.10 0.20 SMB 2,500 / P6SMBxxxAT3G (Pb−Free) Tape & Reel b 0.077 0.080 0.087 1.96 2.03 2.20 c 0.006 0.009 0.012 0.15 0.23 0.31 D 0.130 0.140 0.156 3.30 3.56 3.95 Flow/Wave Soldering (Solder Dipping) E 0.160 0.170 0.181 4.06 4.32 4.60 Peak Temperature : 260OC H 0.205 0.214 0.220 5.21 5.44 5.60 E Dipping Time : 10 seconds L 0.030 0.040 0.063 0.76 1.02 1.60 L1 0.020 REF 0.51 REF Physical Specifications NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Void-free, transfer-molded, thermosetting Case 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. plastic Polarity Cathode indicated by polarity band Part Marking System Mounting Position Any All external surfaces are corrosion Finish resistant and leads are readily solderable Modified L−Bend providing more contact Leads area to bond pads Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17