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  • 型号: OPR5005
  • 制造商: OPTEK
  • 库位|库存: xxxx|xxxx
  • 要求:
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OPR5005产品简介:

ICGOO电子元器件商城为您提供OPR5005由OPTEK设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 OPR5005价格参考。OPTEKOPR5005封装/规格:光学传感器 - 反射式 - 模拟输出, Reflective Optical Sensor 0.050" (1.27mm) 4-SMD, No Lead。您可以下载OPR5005参考资料、Datasheet数据手册功能说明书,资料中有OPR5005 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

传感器,变送器

描述

SENSR OPTO TRANS 5.08MM REFL SMD光学开关(反射型,光电晶体管输出) Reflective Sensor

产品分类

光学传感器 - 反射式 - 模拟输出

品牌

TT Electronics/Optek Technology

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

光学开关(反射型,光电晶体管输出),Optek / TT Electronics OPR5005-

数据手册

点击此处下载产品Datasheet

产品型号

OPR5005

PCN零件编号

点击此处下载产品Datasheet

产品种类

光学开关(反射型,光电晶体管输出)

其它名称

365-1871
OPR5005-ND

包装

托盘

反向电压

2 V

响应时间

-

商标

Optek / TT Electronics

安装类型

表面贴装

安装风格

SMD/SMT

封装

Waffle

封装/外壳

4-SMD,无引线

工作温度

-55°C ~ 125°C

工厂包装数量

25

感应方式

Reflective

感应方法

反射

感应距离

0.050"(1.27mm)

最大工作温度

+ 125 C

最大集电极电流

25 mA

最小工作温度

- 55 C

标准包装

25

正向电压

1.7 V

正向电流

20 mA

波长

890 nm

电压-集射极击穿(最大值)

30V

电流-DC正向(If)

50mA

电流-集电极(Ic)(最大值)

25mA

输出类型

光电晶体管

输出设备

Phototransistor

集电极—发射极最大电压VCEO

30 V

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PDF Datasheet 数据手册内容提取

OPR5005 Features:  High temperature operation  Surface mountable  Compact size  Excellent ambient light protection Description: The OPR5005 is a miniature reflective sensor that combines a silicon phototransistor with a GaAIAs LED in a high- temperature opaque polyamide chip carrier. It is designed to sense the motion or proximity of diffuse reflective surfaces in space-limited applications. The opaque package insures very low cross-talk and shields the phototransistor from ambient light sources, while the silicone encapsulated package allows operation over a wide temperature range. The gold-plated wraparound solder pads offer exceptional storage and wetting characteristics. See Application Bulletin 237 for handling instructions. Applications: Ordering Information Reflective  Motion sensors Switch LED Peak # of I (µA) I (mA) V Packaging C(ON) F CE  Space-limited applications Part Number Wavelength Sensor Elements Min Typ / Max Typ / Max  Applications requiring OPR5005 890 nm Phototransistor 2 725 20 / 50 5 / 30 Chip Tray ambient light protection  Can be stored in dirty Pin # Description Warning: Front Win- 1 Collector dows are pressure sensi- 2 Anode tive. Do not apply pres- sure or high vacuum to 3 Cathode window. 4 Emitter RoHS General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.optekinc.com | www.ttelectronics.com considered accurate at time of going to print. © TT electronics plc Issue E 05/2018 Page 1

Electrical Specifications Absolute Maximum Ratings (T = 25° C unless otherwise noted) A Storage and Operating Temperature -55°C to +125° C Solder reflow time within 5°C of peak temperature is 20 to 40 seconds(1) 250° C LED Forward DC Current 50 mA Peak Forward Current (1 µs pulse; .03% duty cycle) 1.0 A Reverse DC Voltage 2.0 V Power Dissipation(2) 75 mW Phototransistor Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5.0 V Collector DC Current 25 mA Power Dissipation(2) 75 mW Electrical Characteristics (T = 25° C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS LED V Forward Voltage - - 1.7 V I = 20 mA F F I Reverse Current - - 100 µA V = 2.0 V R R Phototransistor V Collector-Emitter Breakdown Voltage 30 - - V I = 100 µA (BR)CEO C V Emitter-Collector Breakdown Voltage 5 - - V I = 100 µA (BR)ECO E V = 5.0 V, I = 0, I Collector Dark Current - - 100 nA CE F CEO E = ≤ 0.10 µW/cm2 e Combined V = 5.0 V, I = 20 mA, I On-State Collector Current(4) 725 - - µA CE F C(ON) d = 0.050” (1.27 mm)(3) I = 20 mA, I = 100 µa, V Collector-Emitter Saturation Voltage(4) - - 0.4 V F C CE(SAT) d = 0.050” (1.27 mm)(3) I Crosstalk (5) - - 75 µA I = 20mA, V = 5V CX F CE Notes: (1) Solder time less than 5 seconds at temperature extreme. (2) Derate linearly 0.75 mW/°C above 25°C. (3) Distance from the assembly face to the reflective surface is “d”. (4) Measured using Eastman Kodak neutral white test card with 90% white diffuse reflectance as a reflecting surface. (5) Crosstalk (I ) is the collector current measured using the indicated current and using a Munsell N2.25 black test card against the face of the CX part. General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.optekinc.com | www.ttelectronics.com considered accurate at time of going to print. © TT electronics plc Issue E 05/2018 Page 2

Performance OPR5005 Collector Current vs Diode Forward Normalized Collector Current vs nt A) rre m Cu nt ( or Curre Collect or d ct ze olle mali C r o N Diode Forward Current (mA) Ambient Temperature (°C) Normalized Collector Current vs Rise and Fall Time vs Load nt rre s) u µ r C me ( o ct Ti olle all C F zed and ali se m Ri r o N Distance to Reflective Surface (mm) Load Resistance (Ω) General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.optekinc.com | www.ttelectronics.com considered accurate at time of going to print. © TT electronics plc Issue E 05/2018 Page 3

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