 Non-contact switching  Single or double apertures for high resolution OPB826  Choice of slot widths  Choice of side-by-side or over/under dual channels  Choice of electrical outputs OPB822 Each OPB822 and OPB826 slotted switch consists of two infrared emitting diodes and two NPN silicon phototransistors mounted on opposite sides of a 0.090” (2.29 mm) wide slot (OPB822) or a 0.100” (2.54 mm) wide slot (OPB826). OPB822 uses an side-by-side mounting configuration, while OPB826 uses an over/under mounting configuration. OPB822S has 0.01” by 0.04” (0.25 mm x 1.02 mm) apertures in front of both phototransistors while the OPB822SD has the aperture in front of both phototransistors and both emitters. The OPB826S has 0.04” by 0.04” (1.02 mm x 1.02 mm) apertures in front of both phototransistors while the OPB826SD has the aperture in front of both phototransistors and both emitters. Dual channels enable direction of travel sensing, with the low-cost plastic housing reduces possible interference from ambient light and provides protection from dust and dirt. Phototransistor switching occurs when an opaque object passes through the device slot. For information on encoder design, see Application Bulletin 203 at: Custom electrical, wire and cabling and connectors are available. Contact your local LED Slot Aperture Lead representative or OPTEK for more information. Part Peak Width / Emitter/ Length / Number Wavelength Sensor Depth Sensor Spacing None / OPB822S  Encoders Dual Dual 0.09" / 0.01" 0.35" /  Non-contact object sensing 935 nm Transistor 0.30” 0.01" / 0.30" OPB822SD  Assembly line automation 0.01"  Machine automation OPB826S NA / 0.04" Dual Dual 0.10" / 0.20" /  Equipment security 0.04" /  Machine safety OPB826SD 890 nm Transistor 0.42” 0.74" 0.04" RoHS

OPB822 Bottom View 8 1 7 2 6 3 5 4 White Dot Pin #1 Pin # Description Pin # Description 8 Cathode-1 1 Collector-1 7 Anode-1 2 Emitter-1 Note 6 6 Cathode-2 3 Collector-2 5 Anode-2 4 Emitter-2 8 1 [ MILLIMETERS] 5 4 DIMENSIONS ARE IN: INCHES OPB826 Bottom View 8 1 7 2 6 3 5 4 Pin # Description Pin # Description 8 Cathode-1 1 Collector-1 7 Cathode-2 2 Collector-2 6 Anode-2 3 Emitter-2 5 Anode-1 4 Emitter-1 CONTAINS POLYSULFONE [ MILLIMETERS] DIMENSIONS ARE IN: To avoid stress cracking, we suggest using INCHES ND Industries’ Vibra-Tite for thread-locking. Vibra-Tite evaporates fast without causing structural failure in OPTEK’s molded plastics. Note 6

Storage & Operating Temperature Range -40° C to +85° C Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron](1) 240°C Forward DC Current OPB822S, OPB822SD 50 mA OPB826S, OPB826SD 40 mA Peak Forward Current (1 µs pulse width, 300 pps) 1 A Reverse DC Voltage 2 V Power Dissipation(2) 100 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Collector DC Current 30 mA Power Dissipation(2) 100 mW Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) Derate linearly 1.67 mW/°C above 25° C. (3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and ketones. Spray and wipe; do not submerge. (4) Derate linearly 3.33 mW/°C above 25° C. (5) All parameters tested using pulse techniques. (6) Feature controlled at body. Encoder Sequence for OPB822 Encoder Sequence for OPB826 0 1 0 1 0 1 0 1 Channel A 110 011 0 0 Channel A 1 0 1 0 1 0 1 0 Channel B 100 110 0 1 Channel B 0.050 [1.27] 0.040 [1.02] Channel A 0.106 [2.69] Typ. 0.212 [5.38] Typ. Channel B 0.020 [0.51] 0.050 [1.27] 0.040 [1.02] 0.025 [0.63] Sequence Sequence 0 1 0 0 1 1 0 0 1 0 0 1 0 0 1 1 0 0 1 0 Channel A For information on encoder design, see Application Bulletin 203 at: 0 0 1 1 0 0 1 0 0 1 0 0 1 1 0 0 1 0 0 1 Channel B http://www.optekinc.com/pdf/App_Note_203.pdf

V Forward Voltage - - 1.7 V I = 20 mA F F I Reverse Current - - 100 µA V = 2 V R R V Collector-Emitter Breakdown Voltage 30 - - V I = 1 mA (BR)(CEO) C V Emitter-Collector Breakdown Voltage 5 - - V I = 100 µA (BR)(ECO) E I Collector-Emitter Leakage Current - - 100 nA V = 10 V, I = 0, E = 0 CEO CE F E On-State Collector Current OPB822S 250 - - µA V = 5 V, I = 20 mA CE F I OPB822SD 100 - - µA V = 5 V, I = 20 mA C(ON) CE F OPB826S 250 - - µA V = 10 V, I = 20 mA CE F OPB826SD 100 - - µA V = 10 V, I = 20 mA CE F Collector-Emitter Saturation Voltage OPB822S - - 0.4 V I = 125 µA, I = 20 mA C F V OPB822SD - - 0.4 V I = 50 µA, I = 20 mA CE(SAT) C F OPB826S - - 0.4 V I = 125 µA, I = 20 mA C F OPB826SD - - 0.4 V I = 50 µA, I = 20 mA C F Crosstalk OPB822D, OPB822SD - - 250 I µA I = 0 mA, I = 20 mA, V = 10 V CX1 OPB826S - - 20 F1 F2 CE OPB826SD - - 10 Notes: (1) All parameters tested using pulse techniques.

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