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  • 型号: OPB711
  • 制造商: OPTEK
  • 库位|库存: xxxx|xxxx
  • 要求:
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OPB711产品简介:

ICGOO电子元器件商城为您提供OPB711由OPTEK设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 OPB711价格参考¥16.65-¥16.65。OPTEKOPB711封装/规格:光学传感器 - 反射式 - 模拟输出, Reflective Optical Sensor 0.080" (2.03mm) PCB Mount。您可以下载OPB711参考资料、Datasheet数据手册功能说明书,资料中有OPB711 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

传感器,变送器

描述

SENSR OPTO TRANS 2.03MM REFL PCB光学开关(反射型,光电晶体管输出) Reflective Sensor

产品分类

光学传感器 - 反射式 - 模拟输出

品牌

TT Electronics/Optek Technology

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

光学开关(反射型,光电晶体管输出),Optek / TT Electronics OPB711-

数据手册

点击此处下载产品Datasheet

产品型号

OPB711

产品种类

光学开关(反射型,光电晶体管输出)

其它名称

365-1684
OPB711-ND

包装

散装

反向电压

2 V

响应时间

-

商标

Optek / TT Electronics

安装类型

通孔

安装风格

Through Hole

封装

Bulk

封装/外壳

PCB 安装

工作温度

-40°C ~ 85°C

工厂包装数量

25

感应方式

Reflective

感应方法

反射

感应距离

0.080"(2.03mm)

最大工作温度

+ 85 C

最大集电极电流

25 mA

最小工作温度

- 40 C

标准包装

25

正向电压

1.7 V

正向电流

20 mA

波长

890 nm

电压-集射极击穿(最大值)

24V

电流-DC正向(If)

50mA

电流-集电极(Ic)(最大值)

25mA

输出类型

光电晶体管

输出设备

Phototransistor

集电极—发射极最大电压VCEO

24 V

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PDF Datasheet 数据手册内容提取

 Choice of phototransistor or photodarlington output  Unfocused for sensing diffuse surface  Low-cost plastic housing  Choice of filter or unfiltered OPB711 consists of an infrared emitting diode and an NPN silicon phototransistor, mounted “side-by-side” on parallel axes in a black opaque plastic housing. The OPB712 consists of an infrared emitting diode and an NPN silicon photodarlington, mounted “side-by-side” on parallel axes in a black plastic housing. OPB711’s, emitting diode and phototransistor are encapsulated in a filtering epoxy to reduce ambient light noise. Its phototransistor responds to radiation from the emitter only when a reflective object passes within its field of view. OPB712’s emitting diode and photodarlington are encapsulated in a filtering epoxy to reduce ambient light noise. Its photodarlington responds to radiation from the emitter only when a reflective object passes within its field of view. Reflection  Non-contact reflective object sensor Part LED Peak Distance Lead Length /  Assembly line automation Number Wavelength Sensor Inch (mm) Spacing  Machine automation OPB711 Transistor 0.30" /  Machine safety 890 nm 0.080" (2.03mm) 0.095" & 0.100"  End of travel sensor OPB712 Darlington “X” = 0.06” (1.5 mm)  Door sensor OPB711 1 3 2 4 OPB712 D IMENSIONS ARE IN: [ MILLIMETERS] 1 3 INCHES Pin # LED Pin # Transistor 1 Anode 3 Collector 2 Cathode 4 Emitter 2 4 RoHS

Storage & Operating Temperature Range -40° C to +85° C Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron](1) 260° C Input Diode (See OP268 for additional information—for reference only) Forward DC Current 50 mA Peak Forward Current (1 μs pulse width, 300 pps) 3 A Reverse DC Voltage 2 V Power Dissipation(2) 80 mW Output Phototransistor (OPB711), Output Photodarlington (OPB712) Collector-Emitter Voltage OPB711 24 V OPB712 15 V Emitter-Collector Voltage 5 V Collector DC Current OPB711 25 mA OPB712 125 mA Power Dissipation OPB711(2) 80 mW OPB712(3) 125 mW Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) Derate linearly 1.33 mW/cm2 above 25 ° C. (3) Derate linearly 2.08 mW/o C above 25o C.

Input Diode (see OP168F for additional information) V Forward Voltage - - 1.7 V I = 20 mA F F I Reverse Current - - 100 μA V = 2 V R R Output Phototransistor (OPB711—See OP508F for additional information) Output Photodarlington (OPB712—See OP538F for additional information) Collector-Emitter Breakdown Voltage V OPB711 24 - - V I = 100 µA (BR)CEO C OPB712 15 - - V Emitter-Collector Breakdown Voltage 5 - - V I = 100 µA (BR)ECO E Collector Dark Current I OPB711 - - 100 nA V = 10 V, I = 0, E = ≤ 0.1 µW/cm2 CEO CE F E OPB712 - - 250 Combined Collector-Emitter Saturation Voltage(1)(2) I = 20 mA, I = 50 µA, d = V OPB711 - - .4 V F C CE(SAT) 0.080” (2.03 mm) OPB712 - - 1.1 On-State Collector Current(1)(2) I = 20 mA, V = 5 V, d = I OPB711 .35 - 4.5 mA F CE C(ON) 0.080” (2.03 mm) OPB712 20 - 50 mA Crosstalk V = 5 V, I = 20 mA (no reflecting I OPB711(3) - - 100 nA CE F CX surface) OPB712(4) - - 25 μA Notes: (1) On OPB711, D is the distance from the assembly measurement surface to the reflective surface. On OPB712, D is the distance from the assembly face to the reflective surface. (2) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog #E 152 7795. (3) Crosstalk (Icx) is the collector current measured with the indicated current in the input diode and with no reflective surface. (4) All parameters were tested using pulse techniques.

OPB711 - Output vs Distance OPB712 - Output vs Distance 1.4 1.2 Normalized at 0.080" Kodak 90% Normalized at 0.080" Kodak 90% 1.2 1.0 Current1.0 Current 0.8 ed Output 00..68 KKCoooddpaaiekkr 91P08a%%per zed Output 0.6 KKCAoovoeddpraaiyekk rL 91Pa08ab%%peelr aliz Avery Labels mali Retro Reflective rm Retro Reflective or0.4 No0.4 N 0.2 0.2 0.0 0.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 Distance (inches) Distance to Reflective Surface (inches) OPB711 - Normalized Collector Current OPB712 - Normalized Collector Current vs Forward Current vs Temperature vs Forward Current vs Temperature 2.5 2.5 Normalized Collector Current at 20mA and 20°C Normalized Collector Current at 20mA and 20°C Reflective Surface Kodak 90% at distance 0.080" Reflective Surface Kodak 90% at distance 0.080" VCE = 5V VCE = 5V 2.0 2.0 Output Current1.5 Output Current1.5 malized 1.0 -40° C malized 1.0 -40° C Nor -02°0 C° C Nor -02°0 C° C 0.5 20° C 0.5 20° C 40° C 40° C 60° C 60° C 80° C 80° C 0.0 0.0 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 50 Forward Current (mA) Forward Current (mA)

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