 Choice of Phototransistor (OPB706) or Photodarlington (OPB707) output  Unfocused for sensing diffuse surface  Low cost plastic housing  Designed for use with PCBoards or connectors The OPB706 consists of an infrared Light Emitting Diode (LED) and an NPN silicon Phototransistor mounted “side-by-side” on parallel axes in a black plastic housing. The OPB707 consists of an infrared LED and an NPN silicon Photodarlington mounted “side-by-side” on parallel axes in a black plastic housing. On both OPB706 and OPB707, the LED and Phototransistor / Photodarlington are molded using dark infrared transmissive plastic to reduce ambient light noise. The Phototransistor / Photodarlington responds to light from the emitter when a reflective object passes within its field of view of the device. Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for more information. Part LED Peak Reflection Lead Length / Number Wavelength Sensor Distance Spacing  Non-contact reflective object sensor OPB706A  Assembly line automation OPB706B Transistor  Machine automation OPB706C 0.050" 0.45" / 0.087",  Machine safety 935 nm OPB707A (1.27mm) 0.100"  End of travel sensor OPB707B Darlington  Door sensor OPB707C OPB706 3 1 4 2 OPB707 [ MILLIMETERS] 3 1 DIMENSIONS ARE IN: INCHES Pin # LED Pin # Transistor 3 Anode 1 Collector 4 Cathode 2 Emitter 4 2 RoHS

Storage and Operating Temperature Range -40° C to +85° C Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron](1) 260° C Input Diode Forward DC Current 50 mA Peak Forward Current (1 µs pulse width, 300 pps) 3 A Reverse DC Voltage 2 V Power Dissipation(2) 75 mW Output Phototransistor (OPB706) | Output Photodarlington (OPB707) Collector-Emitter Voltage OPB706 24 V OPB707 15 V Emitter-Collector Voltage 5 V Collector DC Current OPB706 25 mA OPB707 125 mA Power Dissipation OPB706(2) 75 mW OPB707(3) 100 mW Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) Derate linearly 1.25 mW/°C above 25 ° C. (3) Derate linearly 1.67 mW/°C above 25 ° C.

Input Diode (see OP165W for additional information) V Forward Voltage - - 1.7 V I = 20 mA F F I Reverse Current - - 100 μA V = 2 V R R Output Phototransistor (see OP505W for additional information) | Photodarlington (see OP535 for additional information) Collector-Emitter Brealdown Voltage V OPB706 24 - - V I = 100 µA (BR)CEO C OPB707 15 - - V Emitter-Collector Breakdown Voltage 5 - - V I = 100 µA (BR)ECO E Collector Dark Current I OPB706 - - 100 nA V = 5 V, I = 0, E ≤ 0.1 µW/cm2 CEO CE F E OPB707 - - 250 Combined Crosstalk I OPB706 - - 200 nA I = 20 mA, V = 5 V, No reflecting surface(1) CX F CE OPB707 - - 10 µA On-State Collector Current OPB706A 500 - - µA OPB706B 350 - - I OPB706C 250 - - I = 20 mA, V = 5V , d = 0.05” (1.27 mm)(2) (3) C(ON) F CE OPB707A 25 - - OPB707B 17 - - mA OPB707C 10 - - Collector-Emitter Saturation Voltage I = 20 mA, d = 0.05” (1.27 mm)(2) (3) F V ( OPB706 0.4 - - I = 100µA CESAT) V C(ON) OPB707 1.1 - - I = 2 mA C(ON) Notes: (1) Crosstalk (I ) is the collector current measured with the indicated current in the input diode and with no reflecting surface. CX (2) The distance from the assembly face to the reflective surface is “d”. (3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog #E 152 7795. (4) Lower curve is a calculated worst case condition rather than the conventional -2 Ω limit. (5) All parameters tested using pulse techniques.

OPB706 - Normalized Collector Current OPB706 - Output Current vs Forward Current vs. Object Distance vs Temperature 1.2 3.0 NormaNlizoermd aalti zIeF d= a2t0 ImF A = a2t0 2m0AºC a,t V2C0E°=C5, VV CC = VCE = 5V, IF = 20mA, Normalized at 0.050" Kodak 90% using Kodak 90% at Dista5nVc e = 0.050” (1.27mm) using Kodak 90% at Distance = 0.050" 1.0 2.5 ent nt ut Curr0.8 KKooddaakk 9109%% ut Curre2.0 p p ormalized Out00..46 CARvoeeptrryoy PRaepfleerctive Normalized Out11..05 --042°00 C°° CC N 20° C 40° C 0.2 0.5 60° C 80° C 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 35 40 45 50 Distance to Reflective Surface (inches) Forward Current - mA OPB707 - Normalized Collector Current OPB707 - Output Current vs Forward Current vs. Object Distance vs Temperature 1.2 1.6 NNoorrmmaalilzizeedd aatt IIFF = =2 02m0mAA a ta 2t 02º0C°C, V, VCEC=C5 V= 5V VCE = 5V, IF = 20mA, Normalized at 0.050" Kodak 90% uussiningg K Kooddaak k9 09%0% a ta Dt Disitsatnacnec e= =0 .00.5005"0 (”1 (.12.72m7mm)m) 1.4 1.0 1.2 nt nt e e Curr0.8 Kodak 90% Curr1.0 ut Kodak 18% ut p p ut0.6 Copy Paper ut0.8 O Avery O ed Retro Reflective ed aliz aliz0.6 -40° C m0.4 m -20° C or or 0° C N N 0.4 20° C 40° C 0.2 60° C 0.2 80° C 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 35 40 45 50 Distance to Reflective Surface (inches) Forward Current - mA

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